JPH0542142B2 - - Google Patents
Info
- Publication number
- JPH0542142B2 JPH0542142B2 JP62055565A JP5556587A JPH0542142B2 JP H0542142 B2 JPH0542142 B2 JP H0542142B2 JP 62055565 A JP62055565 A JP 62055565A JP 5556587 A JP5556587 A JP 5556587A JP H0542142 B2 JPH0542142 B2 JP H0542142B2
- Authority
- JP
- Japan
- Prior art keywords
- electrode film
- power generation
- photoactive layer
- extension
- semiconductor photoactive
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000004065 semiconductor Substances 0.000 claims description 29
- 238000010248 power generation Methods 0.000 claims description 19
- 239000000758 substrate Substances 0.000 claims description 17
- 238000000605 extraction Methods 0.000 claims description 14
- 238000000034 method Methods 0.000 claims description 13
- 238000004519 manufacturing process Methods 0.000 claims description 9
- 230000001678 irradiating effect Effects 0.000 claims description 4
- 230000002093 peripheral effect Effects 0.000 claims description 4
- 239000010410 layer Substances 0.000 description 22
- 229910021417 amorphous silicon Inorganic materials 0.000 description 4
- 239000000463 material Substances 0.000 description 3
- 238000000059 patterning Methods 0.000 description 3
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 230000000873 masking effect Effects 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- 238000003466 welding Methods 0.000 description 2
- 229910001316 Ag alloy Inorganic materials 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 150000003377 silicon compounds Chemical class 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- MZFIXCCGFYSQSS-UHFFFAOYSA-N silver titanium Chemical compound [Ti].[Ag] MZFIXCCGFYSQSS-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Photovoltaic Devices (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62055565A JPS63222467A (ja) | 1987-03-11 | 1987-03-11 | 光起電力装置の製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62055565A JPS63222467A (ja) | 1987-03-11 | 1987-03-11 | 光起電力装置の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS63222467A JPS63222467A (ja) | 1988-09-16 |
| JPH0542142B2 true JPH0542142B2 (zh) | 1993-06-25 |
Family
ID=13002228
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62055565A Granted JPS63222467A (ja) | 1987-03-11 | 1987-03-11 | 光起電力装置の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63222467A (zh) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2877328B2 (ja) * | 1988-11-18 | 1999-03-31 | 三洋電機株式会社 | 光起電力装置の製造方法 |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5976480A (ja) * | 1982-10-26 | 1984-05-01 | Fuji Electric Co Ltd | アモルフアスシリコン太陽電池 |
| JPS61280680A (ja) * | 1985-05-10 | 1986-12-11 | Sanyo Electric Co Ltd | 半導体装置の製造方法 |
| JPS62219579A (ja) * | 1986-03-19 | 1987-09-26 | Sanyo Electric Co Ltd | 光起電力装置の製造方法 |
-
1987
- 1987-03-11 JP JP62055565A patent/JPS63222467A/ja active Granted
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5976480A (ja) * | 1982-10-26 | 1984-05-01 | Fuji Electric Co Ltd | アモルフアスシリコン太陽電池 |
| JPS61280680A (ja) * | 1985-05-10 | 1986-12-11 | Sanyo Electric Co Ltd | 半導体装置の製造方法 |
| JPS62219579A (ja) * | 1986-03-19 | 1987-09-26 | Sanyo Electric Co Ltd | 光起電力装置の製造方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS63222467A (ja) | 1988-09-16 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP3035565B2 (ja) | 薄膜太陽電池の作製方法 | |
| US4542578A (en) | Method of manufacturing photovoltaic device | |
| JPH0560674B2 (zh) | ||
| JP2986875B2 (ja) | 集積化太陽電池 | |
| JPH053151B2 (zh) | ||
| JP2002203976A (ja) | 薄膜太陽電池とその製造方法 | |
| JPH0542142B2 (zh) | ||
| JP2877328B2 (ja) | 光起電力装置の製造方法 | |
| JPH07105511B2 (ja) | 光起電力装置の製造方法 | |
| JP4112202B2 (ja) | 薄膜太陽電池の製造方法 | |
| JPH0551190B2 (zh) | ||
| JP4287560B2 (ja) | 薄膜光電変換モジュールの製造方法 | |
| JPS6213829B2 (zh) | ||
| JP3573865B2 (ja) | 光起電力装置の製造方法 | |
| JP2798772B2 (ja) | 光起電力装置の製造方法 | |
| JP2752183B2 (ja) | 光起電力装置の製造方法 | |
| JPS61210681A (ja) | 集積型光起電力装置の製造方法 | |
| JP3685964B2 (ja) | 光電変換装置 | |
| JPS6095979A (ja) | 光電変換半導体装置作製方法 | |
| JPH06177408A (ja) | 薄膜太陽電池およびその製造方法 | |
| JPH0513545B2 (zh) | ||
| JPS61164274A (ja) | 光起電力装置の製造方法 | |
| JPH0691269B2 (ja) | 非晶質シリコン太陽電池の製造方法 | |
| JP2771650B2 (ja) | 光起電力装置の製造方法 | |
| JP4311082B2 (ja) | 薄膜太陽電池およびその製造方法 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EXPY | Cancellation because of completion of term |