JPH0533812B2 - - Google Patents
Info
- Publication number
- JPH0533812B2 JPH0533812B2 JP62062666A JP6266687A JPH0533812B2 JP H0533812 B2 JPH0533812 B2 JP H0533812B2 JP 62062666 A JP62062666 A JP 62062666A JP 6266687 A JP6266687 A JP 6266687A JP H0533812 B2 JPH0533812 B2 JP H0533812B2
- Authority
- JP
- Japan
- Prior art keywords
- film
- plasma
- gas
- reaction
- electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000006243 chemical reaction Methods 0.000 claims description 14
- 239000000758 substrate Substances 0.000 claims description 14
- 239000002245 particle Substances 0.000 claims description 11
- 230000015572 biosynthetic process Effects 0.000 claims description 9
- 230000007935 neutral effect Effects 0.000 claims description 3
- 239000007789 gas Substances 0.000 description 43
- 239000010408 film Substances 0.000 description 35
- 238000000151 deposition Methods 0.000 description 12
- 230000008021 deposition Effects 0.000 description 9
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 9
- 229910052753 mercury Inorganic materials 0.000 description 9
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 8
- 238000000034 method Methods 0.000 description 8
- 230000005855 radiation Effects 0.000 description 8
- 238000005229 chemical vapour deposition Methods 0.000 description 7
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 6
- 238000005192 partition Methods 0.000 description 6
- 229910000077 silane Inorganic materials 0.000 description 6
- 230000000694 effects Effects 0.000 description 5
- 239000010409 thin film Substances 0.000 description 5
- 229910021417 amorphous silicon Inorganic materials 0.000 description 4
- 229910052786 argon Inorganic materials 0.000 description 4
- 230000006866 deterioration Effects 0.000 description 4
- 229910052739 hydrogen Inorganic materials 0.000 description 4
- 239000001257 hydrogen Substances 0.000 description 4
- 239000012535 impurity Substances 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 238000006552 photochemical reaction Methods 0.000 description 4
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 3
- YZCKVEUIGOORGS-OUBTZVSYSA-N Deuterium Chemical compound [2H] YZCKVEUIGOORGS-OUBTZVSYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 239000003054 catalyst Substances 0.000 description 2
- 239000007795 chemical reaction product Substances 0.000 description 2
- 238000011109 contamination Methods 0.000 description 2
- 229910052805 deuterium Inorganic materials 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 229910052743 krypton Inorganic materials 0.000 description 2
- DNNSSWSSYDEUBZ-UHFFFAOYSA-N krypton atom Chemical compound [Kr] DNNSSWSSYDEUBZ-UHFFFAOYSA-N 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 238000006303 photolysis reaction Methods 0.000 description 2
- 230000015843 photosynthesis, light reaction Effects 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- 150000004756 silanes Chemical class 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 229910052724 xenon Inorganic materials 0.000 description 2
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 2
- 206010070834 Sensitisation Diseases 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 229910052784 alkaline earth metal Inorganic materials 0.000 description 1
- 150000001342 alkaline earth metals Chemical class 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- PZPGRFITIJYNEJ-UHFFFAOYSA-N disilane Chemical compound [SiH3][SiH3] PZPGRFITIJYNEJ-UHFFFAOYSA-N 0.000 description 1
- -1 disilane are used Chemical class 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 230000009931 harmful effect Effects 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 208000017983 photosensitivity disease Diseases 0.000 description 1
- 231100000434 photosensitization Toxicity 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 230000008313 sensitization Effects 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 238000000638 solvent extraction Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 231100000331 toxic Toxicity 0.000 description 1
- 230000002588 toxic effect Effects 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Photovoltaic Devices (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62062666A JPS63229711A (ja) | 1987-03-19 | 1987-03-19 | 成膜装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62062666A JPS63229711A (ja) | 1987-03-19 | 1987-03-19 | 成膜装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS63229711A JPS63229711A (ja) | 1988-09-26 |
| JPH0533812B2 true JPH0533812B2 (fr) | 1993-05-20 |
Family
ID=13206844
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62062666A Granted JPS63229711A (ja) | 1987-03-19 | 1987-03-19 | 成膜装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63229711A (fr) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0477229U (fr) * | 1990-11-20 | 1992-07-06 | ||
| JP5836144B2 (ja) * | 2012-01-31 | 2015-12-24 | 東京エレクトロン株式会社 | マイクロ波放射機構および表面波プラズマ処理装置 |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS52116155A (en) * | 1976-03-17 | 1977-09-29 | Fusion Systems Corp | Radio wave generator by microwave |
| JPS58159842A (ja) * | 1982-03-17 | 1983-09-22 | Ricoh Co Ltd | 感光体の製造方法 |
| JPS61241930A (ja) * | 1985-04-18 | 1986-10-28 | Matsushita Electric Ind Co Ltd | プラズマｃｖｄ装置 |
| JPS61254954A (ja) * | 1985-05-02 | 1986-11-12 | エナ−ジ−・コンバ−シヨン・デバイセス・インコ−ポレ−テツド | 感光体 |
-
1987
- 1987-03-19 JP JP62062666A patent/JPS63229711A/ja active Granted
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS52116155A (en) * | 1976-03-17 | 1977-09-29 | Fusion Systems Corp | Radio wave generator by microwave |
| JPS58159842A (ja) * | 1982-03-17 | 1983-09-22 | Ricoh Co Ltd | 感光体の製造方法 |
| JPS61241930A (ja) * | 1985-04-18 | 1986-10-28 | Matsushita Electric Ind Co Ltd | プラズマｃｖｄ装置 |
| JPS61254954A (ja) * | 1985-05-02 | 1986-11-12 | エナ−ジ−・コンバ−シヨン・デバイセス・インコ−ポレ−テツド | 感光体 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS63229711A (ja) | 1988-09-26 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| EXPY | Cancellation because of completion of term |