JPH0530016B2 - - Google Patents

Info

Publication number
JPH0530016B2
JPH0530016B2 JP62084926A JP8492687A JPH0530016B2 JP H0530016 B2 JPH0530016 B2 JP H0530016B2 JP 62084926 A JP62084926 A JP 62084926A JP 8492687 A JP8492687 A JP 8492687A JP H0530016 B2 JPH0530016 B2 JP H0530016B2
Authority
JP
Japan
Prior art keywords
ion beam
scanning
parallel
parallel scanning
ion
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP62084926A
Other languages
English (en)
Japanese (ja)
Other versions
JPS62295347A (ja
Inventor
Daburyuu Berian Donarudo
Ii Keimu Robaato
Daburyuu Bandaahotsuto Jon
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
IKURIPUSU ION TEKUNOROJII Inc
Original Assignee
IKURIPUSU ION TEKUNOROJII Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=25306523&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=JPH0530016(B2) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by IKURIPUSU ION TEKUNOROJII Inc filed Critical IKURIPUSU ION TEKUNOROJII Inc
Publication of JPS62295347A publication Critical patent/JPS62295347A/ja
Publication of JPH0530016B2 publication Critical patent/JPH0530016B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement, ion-optical arrangement
    • H01J37/147—Arrangements for directing or deflecting the discharge along a desired path

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
JP62084926A 1986-04-09 1987-04-08 イオンビ−ム高速平行走査装置 Granted JPS62295347A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US84978686A 1986-04-09 1986-04-09
US849786 1986-04-09

Publications (2)

Publication Number Publication Date
JPS62295347A JPS62295347A (ja) 1987-12-22
JPH0530016B2 true JPH0530016B2 (US07652168-20100126-C00084.png) 1993-05-07

Family

ID=25306523

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62084926A Granted JPS62295347A (ja) 1986-04-09 1987-04-08 イオンビ−ム高速平行走査装置

Country Status (2)

Country Link
US (1) US4922106A (US07652168-20100126-C00084.png)
JP (1) JPS62295347A (US07652168-20100126-C00084.png)

Families Citing this family (96)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2540306B2 (ja) * 1986-07-16 1996-10-02 東京エレクトロン 株式会社 イオン注入装置
JPH077658B2 (ja) * 1989-05-15 1995-01-30 日新電機株式会社 イオン注入装置
JPH0770296B2 (ja) * 1989-05-15 1995-07-31 日新電機株式会社 イオン注入装置
JP2969788B2 (ja) * 1990-05-17 1999-11-02 日新電機株式会社 イオンビームの平行度測定方法、走査波形整形方法およびイオン注入装置
US5311028A (en) * 1990-08-29 1994-05-10 Nissin Electric Co., Ltd. System and method for producing oscillating magnetic fields in working gaps useful for irradiating a surface with atomic and molecular ions
US5132544A (en) * 1990-08-29 1992-07-21 Nissin Electric Company Ltd. System for irradiating a surface with atomic and molecular ions using two dimensional magnetic scanning
US5160846A (en) * 1990-10-03 1992-11-03 Eaton Corporation Method and apparatus for reducing tilt angle variations in an ion implanter
US5091655A (en) * 1991-02-25 1992-02-25 Eaton Corporation Reduced path ion beam implanter
JP3125384B2 (ja) * 1991-11-14 2001-01-15 日本電気株式会社 イオン注入装置
US5177366A (en) * 1992-03-06 1993-01-05 Eaton Corporation Ion beam implanter for providing cross plane focusing
EP0581440B1 (en) * 1992-07-16 2001-09-05 Axcelis Technologies, Inc. Ion beam scanning system
TW297158B (US07652168-20100126-C00084.png) * 1994-05-27 1997-02-01 Hitachi Ltd
JPH08274020A (ja) * 1995-02-13 1996-10-18 Ims Ionen Mikrofab Syst Gmbh 荷電粒子による投影リソグラフィー装置
US5981961A (en) * 1996-03-15 1999-11-09 Applied Materials, Inc. Apparatus and method for improved scanning efficiency in an ion implanter
US6172372B1 (en) * 1997-08-13 2001-01-09 Varian Semiconductor Equipment Associates, Inc. Scanning system with linear gas bearings and active counter-balance options
US6218675B1 (en) * 1997-08-28 2001-04-17 Hitachi, Ltd. Charged particle beam irradiation apparatus
US5898179A (en) * 1997-09-10 1999-04-27 Orion Equipment, Inc. Method and apparatus for controlling a workpiece in a vacuum chamber
US6271529B1 (en) 1997-12-01 2001-08-07 Ebara Corporation Ion implantation with charge neutralization
JP2002517068A (ja) 1998-05-22 2002-06-11 バリアン・セミコンダクター・エクイップメント・アソシエイツ・インコーポレイテッド 低エネルギーイオン注入のための方法及び装置
US6130436A (en) * 1998-06-02 2000-10-10 Varian Semiconductor Equipment Associates, Inc. Acceleration and analysis architecture for ion implanter
US6075249A (en) * 1998-06-19 2000-06-13 Varian Semiconductor Equipment Associates, Inc. Methods and apparatus for scanning and focusing an ion beam
US6998625B1 (en) 1999-06-23 2006-02-14 Varian Semiconductor Equipment Associates, Inc. Ion implanter having two-stage deceleration beamline
US6791094B1 (en) * 1999-06-24 2004-09-14 Varian Semiconductor Equipment Associates, Inc. Method and apparatus for determining beam parallelism and direction
US6403972B1 (en) * 1999-07-08 2002-06-11 Varian Semiconductor Equipment Associates, Inc. Methods and apparatus for alignment of ion beam systems using beam current sensors
US6428262B1 (en) 1999-08-11 2002-08-06 Proteros, Llc Compact load lock system for ion beam processing of foups
US6635880B1 (en) 1999-10-05 2003-10-21 Varian Semiconductor Equipment Associates, Inc. High transmission, low energy beamline architecture for ion implanter
US6521895B1 (en) 1999-10-22 2003-02-18 Varian Semiconductor Equipment Associates, Inc. Wide dynamic range ion beam scanners
US6677599B2 (en) * 2000-03-27 2004-01-13 Applied Materials, Inc. System and method for uniformly implanting a wafer with an ion beam
US6580083B2 (en) 2000-05-15 2003-06-17 Varian Semiconductor Equipment Associates, Inc. High efficiency scanning in ion implanters
US6323497B1 (en) 2000-06-02 2001-11-27 Varian Semiconductor Equipment Assoc. Method and apparatus for controlling ion implantation during vacuum fluctuation
WO2001099144A2 (en) * 2000-06-22 2001-12-27 Proteros, Llc Ion implantation uniformity correction using beam current control
US6437350B1 (en) 2000-08-28 2002-08-20 Varian Semiconductor Equipment Associates, Inc. Methods and apparatus for adjusting beam parallelism in ion implanters
US6696688B2 (en) 2000-09-07 2004-02-24 Diamond Semiconductor Group, Llc Apparatus for magnetically scanning and/or switching a charged-particle beam
US6723998B2 (en) 2000-09-15 2004-04-20 Varian Semiconductor Equipment Associates, Inc. Faraday system for ion implanters
US7547460B2 (en) 2000-09-15 2009-06-16 Varian Semiconductor Equipment Associates, Inc. Ion implanter optimizer scan waveform retention and recovery
US6573518B1 (en) 2000-10-30 2003-06-03 Varian Semiconductor Equipment Associates, Inc. Bi mode ion implantation with non-parallel ion beams
KR100845635B1 (ko) * 2000-11-22 2008-07-10 베리안 세미콘덕터 이큅먼트 어소시에이츠, 인크. 이온 주입용 하이브리드 주사 시스템 및 방법
US6690022B2 (en) * 2001-01-17 2004-02-10 Varian Semiconductor Equipment Associates, Inc. Ion beam incidence angle and beam divergence monitor
CN1322538C (zh) 2001-01-18 2007-06-20 瓦里安半导体设备联合公司 具有包括可调传动限制缝隙的分隔墙的靶腔的离子注入机
US6710359B2 (en) 2001-03-23 2004-03-23 Varian Semiconductor Equipment Associates, Inc. Methods and apparatus for scanned beam uniformity adjustment in ion implanters
US7323700B1 (en) 2001-04-02 2008-01-29 Applied Materials, Inc. Method and system for controlling beam scanning in an ion implantation device
US6716727B2 (en) 2001-10-26 2004-04-06 Varian Semiconductor Equipment Associates, Inc. Methods and apparatus for plasma doping and ion implantation in an integrated processing system
US20030079688A1 (en) * 2001-10-26 2003-05-01 Walther Steven R. Methods and apparatus for plasma doping by anode pulsing
GB2386469B (en) * 2001-11-14 2006-05-17 Varian Semiconductor Equipment Scan methods and apparatus for ion implantation
US20030101935A1 (en) * 2001-12-04 2003-06-05 Walther Steven R. Dose uniformity control for plasma doping systems
US6908836B2 (en) * 2002-09-23 2005-06-21 Applied Materials, Inc. Method of implanting a substrate and an ion implanter for performing the method
US20030197133A1 (en) * 2002-04-23 2003-10-23 Turner Norman L. Method and apparatus for scanning a workpiece in a vacuum chamber
US6777695B2 (en) 2002-07-12 2004-08-17 Varian Semiconductors Equipment Associates, Inc. Rotating beam ion implanter
US7282427B1 (en) 2006-05-04 2007-10-16 Applied Materials, Inc. Method of implanting a substrate and an ion implanter for performing the method
US7049210B2 (en) * 2002-09-23 2006-05-23 Applied Materials, Inc. Method of implanting a substrate and an ion implanter for performing the method
US6762423B2 (en) * 2002-11-05 2004-07-13 Varian Semiconductor Equipment Associates, Inc. Methods and apparatus for ion beam neutralization in magnets
US9159527B2 (en) * 2003-10-16 2015-10-13 Carl Zeiss Microscopy, Llc Systems and methods for a gas field ionization source
US8110814B2 (en) 2003-10-16 2012-02-07 Alis Corporation Ion sources, systems and methods
JP4251453B2 (ja) * 2004-02-23 2009-04-08 日新イオン機器株式会社 イオン注入方法
US6992308B2 (en) * 2004-02-27 2006-01-31 Axcelis Technologies, Inc. Modulating ion beam current
US6956225B1 (en) * 2004-04-01 2005-10-18 Axcelis Technologies, Inc. Method and apparatus for selective pre-dispersion of extracted ion beams in ion implantation systems
KR20050099154A (ko) * 2004-04-09 2005-10-13 삼성전자주식회사 이온주입장치 및 그의 이온추출방법
US6984832B2 (en) * 2004-04-15 2006-01-10 Axcelis Technologies, Inc. Beam angle control in a batch ion implantation system
US6992309B1 (en) 2004-08-13 2006-01-31 Axcelis Technologies, Inc. Ion beam measurement systems and methods for ion implant dose and uniformity control
US6992310B1 (en) 2004-08-13 2006-01-31 Axcelis Technologies, Inc. Scanning systems and methods for providing ions from an ion beam to a workpiece
US7442944B2 (en) * 2004-10-07 2008-10-28 Varian Semiconductor Equipment Associates, Inc. Ion beam implant current, spot width and position tuning
US20060169922A1 (en) * 2004-10-08 2006-08-03 Shengwu Chang Ion implant ion beam parallelism and direction integrity determination and adjusting
US7109499B2 (en) * 2004-11-05 2006-09-19 Varian Semiconductor Equipment Associates, Inc. Apparatus and methods for two-dimensional ion beam profiling
US20060113489A1 (en) * 2004-11-30 2006-06-01 Axcelis Technologies, Inc. Optimization of beam utilization
US7064340B1 (en) * 2004-12-15 2006-06-20 Axcelis Technologies, Inc. Method and apparatus for ion beam profiling
US7208330B2 (en) * 2005-01-12 2007-04-24 Texas Instruments Incorporated Method for varying the uniformity of a dopant as it is placed in a substrate by varying the speed of the implant across the substrate
US7005657B1 (en) 2005-02-04 2006-02-28 Varian Semiconductor Equipment Associates, Inc. Wafer-scanning ion implanter having fast beam deflection apparatus for beam glitch recovery
US7361913B2 (en) * 2005-04-02 2008-04-22 Varian Semiconductor Equipment Associates, Inc. Methods and apparatus for glitch recovery in stationary-beam ion implantation process using fast ion beam control
US20060240651A1 (en) * 2005-04-26 2006-10-26 Varian Semiconductor Equipment Associates, Inc. Methods and apparatus for adjusting ion implant parameters for improved process control
US7355188B2 (en) * 2005-05-24 2008-04-08 Varian Semiconductor Equipment Associates, Inc. Technique for uniformity tuning in an ion implanter system
US7176470B1 (en) 2005-12-22 2007-02-13 Varian Semiconductor Equipment Associates, Inc. Technique for high-efficiency ion implantation
KR100735613B1 (ko) * 2006-01-11 2007-07-04 삼성전자주식회사 이온주입설비의 디스크 어셈블리
JP4625775B2 (ja) * 2006-02-17 2011-02-02 株式会社アルバック イオン注入装置
US7544957B2 (en) 2006-05-26 2009-06-09 Varian Semiconductor Equipment Associates, Inc. Non-uniform ion implantation
US7557363B2 (en) * 2006-06-02 2009-07-07 Axcelis Technologies, Inc. Closed loop dose control for ion implantation
US8450193B2 (en) * 2006-08-15 2013-05-28 Varian Semiconductor Equipment Associates, Inc. Techniques for temperature-controlled ion implantation
WO2008021501A2 (en) * 2006-08-18 2008-02-21 Piero Sferlazzo Apparatus and method for ultra-shallow implantation in a semiconductor device
US7619228B2 (en) * 2006-09-29 2009-11-17 Varian Semiconductor Equipment Associates, Inc. Technique for improved ion beam transport
US7619229B2 (en) * 2006-10-16 2009-11-17 Varian Semiconductor Equipment Associates, Inc. Technique for matching performance of ion implantation devices using an in-situ mask
JP4285547B2 (ja) * 2007-01-22 2009-06-24 日新イオン機器株式会社 ビーム電流波形の測定方法および測定装置
US7745781B2 (en) * 2008-05-30 2010-06-29 Varian, Inc. Real-time control of ion detection with extended dynamic range
US7973290B2 (en) * 2008-08-13 2011-07-05 Axcelis Technologies, Inc. System and method of beam energy identification for single wafer ion implantation
US8207499B2 (en) * 2008-09-24 2012-06-26 Applied Materials Israel, Ltd. Variable rate scanning in an electron microscope
JP5500500B2 (ja) * 2010-03-11 2014-05-21 日新イオン機器株式会社 非対称なアインツェルレンズを有するビーム偏向器を備えたイオン注入装置
CN102194635A (zh) * 2010-03-18 2011-09-21 上海凯世通半导体有限公司 离子注入系统及方法
CN102194637B (zh) * 2010-03-18 2015-03-18 上海凯世通半导体有限公司 离子注入系统及方法
CN102194636B (zh) * 2010-03-18 2013-04-10 上海凯世通半导体有限公司 离子注入系统及方法
JP5638995B2 (ja) * 2011-03-28 2014-12-10 株式会社Ｓｅｎ イオン注入方法及びイオン注入装置
JP5767983B2 (ja) * 2012-01-27 2015-08-26 住友重機械イオンテクノロジー株式会社 イオン注入方法及びイオン注入装置
US9218941B2 (en) 2014-01-15 2015-12-22 Axcelis Technologies, Inc. Ion implantation system and method with variable energy control
JP6195538B2 (ja) 2014-04-25 2017-09-13 住友重機械イオンテクノロジー株式会社 イオン注入方法及びイオン注入装置
US9738968B2 (en) 2015-04-23 2017-08-22 Varian Semiconductor Equipment Associates, Inc. Apparatus and method for controlling implant process
US9773712B2 (en) * 2015-08-25 2017-09-26 Toshiba Memory Corporation Ion implantation apparatus and semiconductor manufacturing method
US10395889B2 (en) 2016-09-07 2019-08-27 Axcelis Technologies, Inc. In situ beam current monitoring and control in scanned ion implantation systems
US10431421B2 (en) * 2017-11-03 2019-10-01 Varian Semiconductor Equipment Associates, Inc Apparatus and techniques for beam mapping in ion beam system
US10553392B1 (en) 2018-12-13 2020-02-04 Axcelis Technologies, Inc. Scan and corrector magnet designs for high throughput scanned beam ion implanter

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53102677A (en) * 1977-02-18 1978-09-07 Hitachi Ltd Ion beam radiating unit
JPS61133545A (ja) * 1984-11-30 1986-06-20 Anelva Corp イオン注入方法

Family Cites Families (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE509097A (US07652168-20100126-C00084.png) * 1951-02-10
US3122631A (en) * 1960-02-05 1964-02-25 Atlas Werke Ag Apparatus for focusing a line type ion beam on a mass spectrometer analyzer
DE1190226B (de) * 1961-12-09 1965-04-01 Akashi Seisakusho Kk Roentgenstrahl-Mikroanalysator
US3569757A (en) * 1968-10-04 1971-03-09 Houghes Aircraft Co Acceleration system for implanting ions in specimen
FR2036373A5 (US07652168-20100126-C00084.png) * 1969-03-12 1970-12-24 Thomson Csf
GB1280013A (en) * 1969-09-05 1972-07-05 Atomic Energy Authority Uk Improvements in or relating to apparatus bombarding a target with ions
US3816748A (en) * 1972-04-28 1974-06-11 Alpha Ind Inc Ion accelerator employing crossed-field selector
US3778626A (en) * 1972-07-28 1973-12-11 Western Electric Co Mechanical scan system for ion implantation
US4021675A (en) * 1973-02-20 1977-05-03 Hughes Aircraft Company System for controlling ion implantation dosage in electronic materials
US4017403A (en) * 1974-07-31 1977-04-12 United Kingdom Atomic Energy Authority Ion beam separators
JPS5836464B2 (ja) * 1975-09-12 1983-08-09 株式会社島津製作所 シツリヨウブンセキソウチ
DE2702445C3 (de) * 1977-01-20 1980-10-09 Siemens Ag, 1000 Berlin Und 8000 Muenchen Korpuskularstrahloptisches Gerät zur verkleinernden Abbildung einer Maske auf ein zu bestrahlendes Präparat
US4117339A (en) * 1977-07-01 1978-09-26 Burroughs Corporation Double deflection electron beam generator for employment in the fabrication of semiconductor and other devices
NL182924C (nl) * 1978-05-12 1988-06-01 Philips Nv Inrichting voor het implanteren van ionen in een trefplaat.
US4276477A (en) * 1979-09-17 1981-06-30 Varian Associates, Inc. Focusing apparatus for uniform application of charged particle beam
JPS56126918A (en) * 1980-03-11 1981-10-05 Hitachi Ltd Injecting device for ion
JPS57182956A (en) * 1981-05-07 1982-11-11 Hitachi Ltd Ion-implantation device
US4447773A (en) * 1981-06-22 1984-05-08 California Institute Of Technology Ion beam accelerator system
US4433247A (en) * 1981-09-28 1984-02-21 Varian Associates, Inc. Beam sharing method and apparatus for ion implantation
US4449051A (en) * 1982-02-16 1984-05-15 Varian Associates, Inc. Dose compensation by differential pattern scanning
FR2532112A1 (fr) * 1982-08-17 1984-02-24 Commissariat Energie Atomique Procede pour faire varier en fonction du temps la trajectoire d'un faisceau de particules chargees
JPS59230242A (ja) * 1983-06-10 1984-12-24 Hitachi Ltd イオン打込装置
US4578589A (en) * 1983-08-15 1986-03-25 Applied Materials, Inc. Apparatus and methods for ion implantation
US4587433A (en) * 1984-06-27 1986-05-06 Eaton Corporation Dose control apparatus
US4587432A (en) * 1984-08-03 1986-05-06 Applied Materials, Inc. Apparatus for ion implantation
JPH0630237B2 (ja) * 1984-09-10 1994-04-20 株式会社日立製作所 イオン打込み装置
US4661712A (en) * 1985-05-28 1987-04-28 Varian Associates, Inc. Apparatus for scanning a high current ion beam with a constant angle of incidence
WO1988002920A1 (en) * 1986-10-08 1988-04-21 Varian Associates, Inc. Method and apparatus for constant angle of incidence scanning in ion beam systems

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53102677A (en) * 1977-02-18 1978-09-07 Hitachi Ltd Ion beam radiating unit
JPS61133545A (ja) * 1984-11-30 1986-06-20 Anelva Corp イオン注入方法

Also Published As

Publication number Publication date
US4922106A (en) 1990-05-01
JPS62295347A (ja) 1987-12-22

Similar Documents

Publication Publication Date Title
JPH0530016B2 (US07652168-20100126-C00084.png)
US4980562A (en) Method and apparatus for high efficiency scanning in an ion implanter
JP3153784B2 (ja) イオンビーム走査方法および装置
US5900629A (en) Scanning electron microscope
US4276477A (en) Focusing apparatus for uniform application of charged particle beam
EP0116083B1 (en) Low voltage field emission electron gun
US4804852A (en) Treating work pieces with electro-magnetically scanned ion beams
US5751002A (en) Ion implantation apparatus
EP0914194A1 (en) End cap reflectron for time-of-flight mass spectrometer
US5099130A (en) Apparatus and methods relating to scanning ion beams
US3881108A (en) Ion microprobe analyzer
US5216253A (en) Ion implantation apparatus with variable width slits providing an ion beam of high purity
JPH04242060A (ja) 反射電子顕微鏡
US4835399A (en) Charged particle beam apparatus
US6897457B1 (en) Apparatus and method for monitoring and tuning an ion beam in ion implantation apparatus
JPS6334844A (ja) 絶縁材料のイオン分析方法および装置
US3814936A (en) Mass spectrometers and mass spectrometry
JPS6224545A (ja) 荷電粒子ビーム装置
JPH063720B2 (ja) 集束イオンビ−ム装置
JPS61114453A (ja) 荷電粒子線装置
JPH0668832A (ja) 走査電子顕微鏡
JPH01304650A (ja) 質量分析計
JPS62115639A (ja) イオン注入装置
JPH11250843A (ja) 集束イオンビーム装置
JPH02183150A (ja) イオンの質量分析法および装置

Legal Events

Date Code Title Description
R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

EXPY Cancellation because of completion of term