JPH052981B2 - - Google Patents

Info

Publication number
JPH052981B2
JPH052981B2 JP15792787A JP15792787A JPH052981B2 JP H052981 B2 JPH052981 B2 JP H052981B2 JP 15792787 A JP15792787 A JP 15792787A JP 15792787 A JP15792787 A JP 15792787A JP H052981 B2 JPH052981 B2 JP H052981B2
Authority
JP
Japan
Prior art keywords
pattern
film
sio
resist pattern
resist
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP15792787A
Other languages
English (en)
Japanese (ja)
Other versions
JPS643663A (en
Inventor
Tooru Watanabe
Katsuya Okumura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Shibaura Electric Co Ltd filed Critical Tokyo Shibaura Electric Co Ltd
Priority to JP15792787A priority Critical patent/JPS643663A/ja
Publication of JPS643663A publication Critical patent/JPS643663A/ja
Publication of JPH052981B2 publication Critical patent/JPH052981B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Diffracting Gratings Or Hologram Optical Elements (AREA)
JP15792787A 1987-06-26 1987-06-26 Forming method for fine pattern Granted JPS643663A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15792787A JPS643663A (en) 1987-06-26 1987-06-26 Forming method for fine pattern

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15792787A JPS643663A (en) 1987-06-26 1987-06-26 Forming method for fine pattern

Publications (2)

Publication Number Publication Date
JPS643663A JPS643663A (en) 1989-01-09
JPH052981B2 true JPH052981B2 (enrdf_load_stackoverflow) 1993-01-13

Family

ID=15660512

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15792787A Granted JPS643663A (en) 1987-06-26 1987-06-26 Forming method for fine pattern

Country Status (1)

Country Link
JP (1) JPS643663A (enrdf_load_stackoverflow)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2930971B2 (ja) * 1989-06-22 1999-08-09 株式会社東芝 パターン形成方法
EP0448869A1 (en) * 1989-12-29 1991-10-02 AT&T Corp. Optical device including a grating structure
US7498119B2 (en) 2006-01-20 2009-03-03 Palo Alto Research Center Incorporated Process for forming a feature by undercutting a printed mask
US7365022B2 (en) 2006-01-20 2008-04-29 Palo Alto Research Center Incorporated Additive printed mask process and structures produced thereby
US9960038B2 (en) 2010-12-27 2018-05-01 Brewer Science, Inc. Processes to pattern small features for advanced patterning needs
JP6206667B2 (ja) * 2013-11-06 2017-10-04 大日本印刷株式会社 パターン形成方法

Also Published As

Publication number Publication date
JPS643663A (en) 1989-01-09

Similar Documents

Publication Publication Date Title
EP0259098B1 (en) Integrated circuits having stepped dielectric regions
US5256248A (en) Method for patterning semiconductor
JPH052981B2 (enrdf_load_stackoverflow)
JP2665568B2 (ja) 半導体装置の製造方法
KR0165399B1 (ko) 미세패턴 형성방법
JP2765561B2 (ja) 微細空中配線の作製方法
USRE33622E (en) Integrated circuits having stepped dielectric regions
JP2003282700A (ja) ホール形成方法
JPS63258020A (ja) 素子分離パタ−ンの形成方法
JP2695919B2 (ja) 配線パターンの形成方法
JPH02189922A (ja) 半導体装置の製造方法
JPH06224161A (ja) 半導体装置の製造方法
KR100256809B1 (ko) 반도체 소자의 콘택홀 형성방법
KR0122508B1 (ko) 미세콘택홀 형성방법
KR100273118B1 (ko) 반도체소자의금속배선형성방법
JPH01110727A (ja) 半導体装置の製造方法
KR20010060984A (ko) 반도체 장치의 콘택홀 형성방법
JP2973439B2 (ja) 基体のエッチング方法
JPS5852341B2 (ja) 半導体装置の製造方法
JPH01119028A (ja) 半導体装置の製造方法
KR100204910B1 (ko) 반도체장치의 배선들의 접촉 방법
JP3191769B2 (ja) 半導体装置の製造方法
KR100247642B1 (ko) 반도체 소자의 콘택홀 형성방법
KR0172249B1 (ko) 반도체소자의 콘택홀 형성방법
KR20050002010A (ko) 반도체 소자의 콘택홀 형성방법