JPH05291486A - Resin-sealed semiconductor device - Google Patents

Abstract

PURPOSE:To prevent an external apparatus from being large-sized even upon mounting a plurality of semiconductor devices by electrically interconnecting electrodes of at least two LOC-structured semiconductor devices with a first lead frame, and joinning the first lead frame with a second lead frame. CONSTITUTION:Semiconductor devices 1, 1' are disposed oppositely in their circuit formation surfaces 1a, 1a'. Electrodes 2, 2' provided at the center of the circuit formation surfaces 1a, 1a' of the semiconductor devices 1, 1', and first lead frames 4, 4' are electrically interconnected through metal fine wires 5, 5'. The first lead frames 4, 4' are joinned with a second lead frame 6 at the ends of a package on the long sides of the same. Hereby, there can be mounted on a package two LOC semiconductor devices where an electrode is provided at the center thereof using a prior art technique. Further, there can be reduced the length of a portion of the semiconductor device where leads around the semiconductor device are fixed to resin.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a resin-sealed semiconductor device suitable for high integration.

[0002]

2. Description of the Related Art Conventionally, in a resin-encapsulated semiconductor device, a semiconductor element is fixed on a tab which is an element mounting portion, a plurality of leads are arranged around the tab, and the semiconductor element and the leads are formed of a fine metal wire. A structure is adopted in which the electrical connection is made and the periphery is sealed with resin.

In recent years, in order to achieve high integration of semiconductor devices, there is an increasing demand for semiconductor devices having two or more semiconductor elements mounted thereon. A conventional structure in which a semiconductor element is fixed on a tab and a plurality of semiconductor elements are mounted is disclosed in JP-A-62-8529, JP-A-62-131555, and JP-A-62-119952. JP-A-63-124450 and JP-A-63-124450.

[0004]

The above-mentioned conventional techniques have not been put into practical use because they have the following problems, respectively. That is, JP-A-62-8529 and JP-A-
In the structure in which the semiconductor elements are mounted on both sides of the tab as disclosed in Japanese Patent Publication No. 62-131555, it is necessary to connect the electrodes on the element on one surface and the lead frame with the thin metal wires, and then connect the thin metal wires on the opposite surface. There is. In this structure, it is difficult to connect the metal thin wires on the opposite side without damaging the metal thin wires connected first.

In a structure in which a two-stage lead frame is resin-sealed as disclosed in Japanese Patent Laid-Open No. 63-124450,
It is difficult to mass-produce this with a commonly used transfer mold.

In the structure disclosed in JP-A-62-119952 in which the lead frames are joined together inside the package to form one package, the lead frame may be molded before the resin sealing. Since it is difficult and the package becomes thick, it is meaningless from the viewpoint of high integration.

Further, in the structure in which the semiconductor element is fixed on the tab as disclosed in the prior art, when the size of the semiconductor element is increased while keeping the external dimension of the semiconductor device constant, the leads are made of resin. The length of the part fixed to is insufficient,
There is a problem that the leads cannot be given sufficient fixing strength.

Further, in the conventional structure, the leads arranged in the vicinity of the side surface of the semiconductor element and the electrodes on the element are connected by the fine metal wires, so that the position of the electrode is limited to the peripheral end portion of the element.
For this reason, a package in which the leads as disclosed in JP-A-61-241959 are extended to the circuit forming surface of the semiconductor element (hereinafter referred to as a lead-on-chip structure, abbreviated as LOC structure). Elements used in
It cannot be used when two elements whose electrodes are provided near the center of the element are mounted in one package.

An object of the present invention is to provide a semiconductor element having a LOC structure, in which even when a plurality of semiconductor elements are mounted in a semiconductor device, the external dimensions of the semiconductor device do not become large, a sufficient lead fixing strength is obtained, and a LOC structure is obtained. The object is to provide a package structure that can be mounted and that has good mass productivity.

[0010]

In order to achieve the above object, the present invention electrically connects at least two electrodes of a semiconductor element having a LOC structure and a first lead frame, and connects the first lead frame to each other. Bonded to the second leadframe.

In the resin-encapsulated semiconductor device of the present invention, the semiconductor elements are arranged so that the circuit formation surfaces of at least two LOC structure semiconductor elements face each other, and the semiconductor elements are disposed on the circuit formation surface excluding the electrodes of each semiconductor element. The first lead frame is disposed via an insulating member, the first lead frame and the electrodes of the semiconductor element are electrically connected to each other, for example, by a thin metal wire, and the first lead frame is connected to the second lead. A package is formed by bonding it to a frame and sealing the periphery thereof with a resin, and is characterized by any of the following configurations.

(1) The first lead frame electrically connected to the electrode of the semiconductor element by a metal thin wire or the like is joined to the second lead frame.

(2) In (1), the first lead frame and the second lead frame are joined by welding.

(3) In (1), the first lead frame and the second lead frame are joined by solder.

(4) In (1), the plate thickness of the first lead frame is made thinner than that of the second lead frame.

(5) In (1), the plate width of the first lead frame is made smaller than that of the second lead frame.

(6) In (1), the materials used for the first lead frame and the second lead frame are changed.

[0018]

In the package of the semiconductor device according to the present invention, two or more semiconductor elements can be mounted in one package even if the semiconductor element having the LOC structure in which the electrodes are arranged near the center of the semiconductor element is used. ..

Further, by using the semiconductor element having the LOC structure, the semiconductor element can be enlarged to the vicinity of the outer shape of the semiconductor device, and high integration can be achieved.

Further, the package according to the present invention has a LO
Since the conventional technology such as the manufacturing technology of the C structure package and the joining technology by laser welding or resistance welding can be applied as it is, mass productivity is good.

[0021]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of the present invention will be described below with reference to FIGS.

FIG. 1 is a sectional view of a resin-sealed semiconductor device which is an embodiment of the present invention. FIG. 2 is a plan view of the resin-encapsulated semiconductor device shown in FIG. 1 with the lower part removed from the second lead frame. In this embodiment, the semiconductor element 1,
1'is arranged so that the circuit forming surfaces 1a and 1a 'thereof face each other. The insulating members 3 and 3'are bonded to the surfaces of the semiconductor elements 1 and 1'excluding the electrodes 2 and 2'of the circuit forming surfaces 1a and 1a 'by an adhesive, and the first lead frame 4, 4'is an insulating member 3, 3 '
Are joined to each. Electrodes 2, 2'provided in the central portions of the circuit forming surfaces 1a, 1a 'of the semiconductor elements 1, 1'
The first lead frames 4 and 4'are electrically connected to each other by thin metal wires 5 and 5 '. The first lead frames 4 and 4'are joined to the second lead frame 6 at the ends of the long side of the package. These members are sealed with a sealing resin 7.

Next, a method of manufacturing the resin-sealed semiconductor device shown in this embodiment will be described. First lead frames 4, 4'via circuit-forming surfaces 1a, 1'a of semiconductor elements 1, 1'through insulating members 3, 3'having adhesives applied on both sides.
Glue. Next, the electrodes 2, 2'of the semiconductor elements 1, 1'and the first lead frames 4, 4'are electrically connected by the thin metal wires 5, 5 ', respectively. The two lead members 4 and 4 ′ are bonded to the second lead frame 6 with the circuit forming surfaces 1 a and 1 a ′ of the two sets of members thus configured facing each other. The first lead frame 4, 4'and the second lead frame 6 are joined by laser welding, resistance welding, soldering or the like. After joining the first lead frames 4, 4'and the second lead frame 6, the outer portions are cut off from the joining portions 8, 8'of the first lead frames 4, 4 ', and then these are sealed with a resin 7. To do. One end of the second lead frame 6 is molded into a predetermined shape outside the package, and the semiconductor device shown in FIG. 1 is obtained.

According to the present embodiment, it is possible to mount two semiconductor elements having the LOC structure in which the electrodes are provided in the central portion in one package by using the conventional technique. In addition, since the length of the portion where the leads around the semiconductor element are fixed to the resin can be reduced, a larger semiconductor element can be mounted in a package with limited external dimensions,
High integration of a semiconductor device can be achieved.

The insulating members 3 and 3'mainly consist of one or a plurality of resins selected from epoxy resins, phenol resins, polyimide resins, etc., and inorganic fillers, various additives, etc. are added to them as necessary. Use the material.

The first lead frames 4, 4'and the second lead frame 6 are made of, for example, Fe-Ni alloy (Fe-4).
2Ni, etc.), Cu alloy or the like.

Aluminum (A
l), gold (Au) or copper (Cu) thin wires are used.

The resin 7 is an epoxy resin to which a phenolic curing agent, silicone rubber and a filler are added, and a flame retardant, a coupling agent, a coloring agent and the like are added in a small amount.

The direction in which the second lead frame 6 is pulled out of the package is not limited to the two directions shown in FIGS. 1 and 2, but may be one direction or three directions.
It may be more than the direction. Further, in the drawing, the J-bend type in which the second lead frame 6 is bent downward outside the package and the tip is bent to the lower surface of the package is shown as an example, but the second lead frame 6 is bent in an arbitrary direction and shape. It may or may not be bent.

In the embodiment shown in FIG. 1, the first lead frame 4, 4'and the second lead frame 6 are joined inside the package. However, as shown in FIG. The first lead frame 4, 4 ′ and the second lead frame 6 may be joined together.

In the embodiment shown in FIGS. 1 and 3, the first lead frames 4 and 4'are cut from the joint portions 8 and 8'at the outer portion, but as shown in FIG. Alternatively, the first lead frames 4 and 4'may be molded together with the second lead frame 6 outside the package without cutting.

In the embodiment shown in FIG. 1, the first lead frame 4, 4'and the second lead frame 6 have the same plate thickness and plate width, but as shown in FIG. The plate thickness of the first lead frames 4 and 4 ′ may be thinner than that of the second lead frame 6. Further, as shown in FIG. 6, the plate width of the first lead frames 4 and 4'may be smaller than that of the second lead frame 6. By making the plate thickness or the plate width of the first lead frames 4 and 4 ′ smaller than that of the second lead frame 6 as described above, the first lead frames 4 and 4 ′ and the second lead frame 6 can be easily joined, The first lead frames 4, 4'can be cut at the same time as the joining.

Furthermore, the first lead frames 4, 4'and the second lead frame 6 may be made of the same material or different materials.

FIG. 7 is a sectional view of a resin-encapsulated semiconductor device showing another embodiment of the present invention, and FIG. 8 shows a portion below the second lead frame 6 of the resin-encapsulated semiconductor device shown in FIG. It is the removed top view. In this embodiment, the semiconductor elements 1, 1
′ Is arranged such that the circuit forming surfaces 1 a and 1 a ′ face each other. The insulating members 3 and 3'are bonded to the surfaces of the semiconductor elements 1 and 1'excluding the electrodes 2 and 2'of the circuit forming surfaces 1a and 1a 'by an adhesive, and the first lead frame 4, 4'is joined to the insulating members 3 and 3 ', respectively. Electrodes 2 and 2 provided on the short side edges of the circuit forming surfaces 1a and 1a 'of the semiconductor elements 1 and 1'
′ And the first lead frames 4, 4 ′ are thin metal wires 5, 5 ′
Are electrically connected by. The first lead frames 4 and 4'are respectively joined to the second lead frame 6 at the long side end portions of the package. These members are sealed with the sealing resin 7.

According to the present embodiment, even if two semiconductor elements having the LOC structure with electrodes provided at the ends are used, they can be mounted in one package. In addition, since the length of the portion where the leads around the semiconductor element are fixed to the resin can be reduced, it is possible to mount a larger semiconductor element in a package with limited external dimensions, and to increase the integration of the semiconductor device. Can be achieved.

[0036]

According to the present invention, since a semiconductor element having a LOC structure can be used, even if a plurality of semiconductor elements are mounted in a semiconductor device, the external dimensions of the semiconductor device do not become large and the semiconductor device is sufficiently large. It is possible to obtain various lead fixing strengths and achieve high integration of semiconductor devices.

[Brief description of drawings]

FIG. 1 is a sectional view of a resin-encapsulated semiconductor device showing an embodiment of the present invention.

FIG. 2 is a plan view showing the positions of electrodes in FIG.

FIG. 3 is a sectional view showing another joining method of the first lead frame and the second lead frame of FIG.

FIG. 4 is a sectional view of a resin-sealed semiconductor device showing a second embodiment of the present invention.

5 is a cross-sectional view showing an example in which the plate thickness of the first lead frame of FIG. 1 is thinner than that of the second lead frame.

6 is a cross-sectional view showing an example in which the plate width of the first lead frame of FIG. 1 is smaller than that of the second lead frame.

FIG. 7 is a sectional view of a resin-encapsulated semiconductor device showing a third embodiment of the present invention.

FIG. 8 is a plan view showing the positions of the electrodes in FIG.

[Explanation of symbols]

1, 1 '... semiconductor element, 1a, 1a' ... circuit forming surface,
2, 2 '... electrode, 3, 3' ... insulating member, 4, 4 '... first lead frame, 5, 5' ... fine metal wire, 6 ... second lead frame, 7 ... resin, 8, 8 '... bonding Department.

─────────────────────────────────────────────────── ─── Continuation of the front page (51) Int.Cl. ⁵ Identification code Internal reference number FI Technical indication location H01L 25/18 (72) Inventor Maya Obata 502 Jinmachi-cho, Tsuchiura-shi, Ibaraki Hiritsu Seisakusho Co., Ltd. Inside the laboratory (72) Inventor Ryuji Kono 502 Kandamachi, Tsuchiura City, Ibaraki Prefecture

Claims (7)

[Claims] 1. A semiconductor element, a lead frame composed of an assembly of leads, means for electrically connecting the semiconductor element and the lead frame are provided, and the periphery thereof is sealed with a resin to form a package. In a resin-sealed semiconductor device, a plurality of semiconductor elements are used, circuit formation surfaces of the semiconductor elements are opposed to each other, and insulation is provided on at least a part of a portion of the respective semiconductor elements excluding electrodes on the circuit formation surface. A member is adhered, a first lead frame is arranged on the insulating member, and the first lead frame and the electrode on the semiconductor element are electrically connected to each other, and the first lead frame is formed. A resin-sealed semiconductor device, characterized in that each is bonded to a second lead frame. 2. The resin-encapsulated semiconductor device according to claim 1, wherein the electrode on the semiconductor element and the first lead frame are electrically connected by a thin metal wire. 3. The resin-sealed semiconductor device according to claim 1, wherein the first lead frame and the second lead frame are joined by welding. 4. The resin-sealed semiconductor device according to claim 1, wherein the first lead frame and the second lead frame are joined by solder. 5. The resin-sealed semiconductor device according to claim 1, wherein the first lead frame is thinner than the second lead frame. 6. The resin-sealed semiconductor device according to claim 1, wherein the plate width of the first lead frame is smaller than that of the second lead frame. 7. The resin-sealed semiconductor device according to claim 1, wherein the first lead frame and the second lead frame are made of different materials.