JP2536439B2 - Lead frame for semiconductor device and resin-sealed semiconductor device using the same - Google Patents

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor device lead frame and a resin-sealed semiconductor device using the same.

[0002]

2. Description of the Related Art While the number of electrodes (hereinafter referred to as "pads") on a semiconductor element has increased remarkably as the performance of the semiconductor element has improved, the number of electrodes formed on the semiconductor element has increased as the diffusion technology has advanced. The area is decreasing. Therefore, the size of the semiconductor device is limited by the number of pads. For example, when the pad pitch is 120 μm and the number of pads is 500, the length of one side of the semiconductor element is required to be 15 mm or more. Generally, several tens to several hundreds of semiconductor elements can be obtained from one silicon wafer, and a diffusion process for forming a circuit on the silicon wafer is performed on a wafer-by-wafer basis. Therefore, the manufacturing cost per wafer is the same regardless of the number of semiconductor elements obtained from one wafer, and the smaller the size of the semiconductor element, the lower the unit price of the semiconductor element.

Therefore, in order to reduce the size of the semiconductor element, the pad pitch may be reduced. However, when the pad pitch is reduced, the pad on the semiconductor element in the resin-sealed semiconductor device (hereinafter referred to as "plastic package") is reduced. In the wire connection method using the Au wire, which is generally used to connect the internal lead arranged around the semiconductor element mounting portion (hereinafter, referred to as “island”) with the wire, the wire used by the bonding tool immediately before is used. Accidents such as touching the wire and pushing down the wire are likely to occur.
Further, the ball diameter after bonding is required to be at least 65 μm to 70 μm in terms of adhesive strength and reliability of the bonded state, and therefore the minimum pad pitch is generally limited to 110 μm to 120 μm in terms of bonding technology.

Further, as the number of pads increases, the number of internal leads arranged around the island also increases. However, due to the limited manufacturing capacity of the lead frame and the restriction on the wire length to properly form the wire loop so that the wire does not short-circuit to other conductive parts, There is a limit to the number of reads that can be arranged. Generally, the thickness of the lead frame is currently 120 μm, which is the thinnest, but the manufacturing limit of the lead pitch at this time is 180 μm due to etching.
m, and 220 μm by pressing. Even in the case of etching, in the case of 500 leads, the lead tips are arranged at the positions of four sides of a square of about 22.5 mm. At this time, in the case of a square semiconductor element having a side length of 15 mm, the wire length should be such that the wire has an angle when bonding (the pad on the semiconductor element and the internal lead are aligned with each other in a straight line). 5.0 mm, and the pad pitch is 120μ
When the wire pitch is 200 μm or less and the wires are densely packed, the length of the wire that can bond the wire without bending so as not to contact the adjacent wire is about 4.5 mm. Is over. The above plastic package has a lead frame in which at least an island, internal leads arranged around the island, and external leads connected to the internal leads are formed by pressing or etching, A semiconductor element is mounted on the island of the lead frame, the semiconductor element and the internal lead are connected by a wire, and then the semiconductor element and a part of the internal lead are sealed with resin so as to expose the external lead. is there.

From the above problems, the pad pitch of the plastic package is 110 μm to 120 μm.
The limit is m, and the number of leads of about 300 leads is only practically used.

As a method of assembling a semiconductor device by increasing the pad pitch without increasing the size of the semiconductor element,
There is a ceramic package.

FIG. 17 is a plan view showing a wire connection state between pads on a semiconductor element and lead-out leads in the ceramic package, and FIG. 18 is a partial sectional view of the ceramic package shown in FIG.

In a ceramic package, FIG.
And, as shown in FIG. 18, the pads 102 are arranged in two rows and in a staggered manner on the semiconductor element 101.
The lower layer lead 104 and the upper layer lead 105 were formed on the ceramic 103 around 01 with different heights and arranged. Then, the lower layer lead 104 arranged near the semiconductor element 101 and the pad outside the semiconductor element 101 are connected by a wire 106, and the upper layer lead 105 arranged far from the semiconductor element 101 and the pad inside the semiconductor element 101. And were connected by a wire 106. At this time, the wire connecting the inner pad of the semiconductor element 101 and the upper layer lead 105 is made higher than the wire connecting the outer pad and the lower layer lead 104, so that a short circuit due to the wire can be prevented. However, although the ceramic package is advantageous for forming a large number of leads, the cost is several times as high as that of the plastic package.
For this reason, the development of a technique for making many plastic packages into leads has become an important issue.

As a solution to this problem, Japanese Patent Laid-Open No. 12136/1990
The method described in Japanese Patent No. 1 has been proposed.

FIG. 19 shows an attempt to solve the above problem.
FIG. 20 is a plan view showing the configuration of a lead frame included in a conventional resin-sealed semiconductor device, and FIG. 20 is a sectional view taken along line XX when a semiconductor element is mounted on the lead frame shown in FIG. FIG. 21 is a diagram showing a case where the bonding wires contact each other in the structure of the lead frame shown in FIG.

A lead frame 107 shown in FIG. 19 includes a device hole 108 and a suspender 10 which serves as a support frame.
This is a structure in which at least the internal leads 110a and 110b, the external leads 111, and the island 112 are formed by stacking a Cu foil on a resin film such as a polyimide film provided with 9 and then etching the Cu foil.
The inner leads 110a and 110b have their tips alternately arranged in a staggered manner. As shown in FIG. 20, the outer inner leads 110b have their tips on the suspenders 109, and the inner leads 110a have inner tips. It extends to the device hole 108, bends downward along the side surface of the suspender 109, and further bends toward the island 112 at the back surface position of the suspender 109.
It is located in the vicinity of 2. Therefore, the internal lead 110a
The inner lead 110b and the inner lead 110b have a difference in height at their tips. However, in the lead frame 107 having this structure,
When the wire 114 is slightly curled, or when the positions of the internal leads 110a and 110b and the semiconductor element 113 are slightly deviated from each other and the wire is angled for bonding, the internal lead 110b is bonded as shown in FIG. Since the formed wire comes into contact with the inner lead 110a to form the contact portion 115, it is difficult to manufacture, the yield is reduced, and the cost is increased.

Another system is proposed in Japanese Patent Laid-Open No. 2-121361.

FIG. 22 shows an attempt to solve the above problem.
FIG. 23 is a plan view showing another structure of the lead frame included in the conventional resin-sealed semiconductor device, and FIG. 23 is a sectional view taken along the line YY when the semiconductor element is mounted on the lead frame shown in FIG.

The lead frame 116 shown in FIG. 22 includes a device hole 117 and a suspender 11 that serves as a support frame.
In this structure, a Cu foil or the like is bonded onto an insulating substrate such as glass epoxy provided with No. 8, and then the Cu foil is etched to form the inner leads 119a and 119b, the outer leads 121, and the island 122. Further FIG.
As shown in FIG. 3, the pattern formed by etching the Cu foil is present on both sides of the insulating substrate, and the island 112 and some of the internal leads are formed in the lower layer. The lower internal lead 119b is connected to the upper external lead 121 via the through hole 123. The lower internal leads 119b extend into the device hole 117, and the tips thereof are arranged alternately with the tips of the upper internal leads 119a located on the suspenders 118, that is, in a zigzag pattern. However, in order to manufacture the lead frame 116 having this structure, the method is similar to the method for manufacturing a double-sided pattern printed circuit board, but the pattern is projected into the device hole 117, and the front and back surfaces of the insulating substrate such as glass epoxy are formed. Since the two-layer lead pattern has to be formed, the manufacturing process is complicated,
It is much more expensive than the lead frame used in plastic packages.

[0015]

As described in the above description of the prior art, in order to manufacture a plastic package having a large number of leads without increasing the size of the semiconductor device, the pads on the semiconductor device and The tips of the internal leads are arranged in two rows in a staggered arrangement, and the outer pads and the inner leads, and the inner pads and the outer leads may be wire-bonded by providing a step in the height direction. The structure was very expensive.

The present invention has been made in view of the above problems of the prior art, and is an inexpensive lead for a semiconductor device, which is equipped with a large number of leads and can be mounted with high reliability on a semiconductor element having an increased number of pads. An object is to provide a frame and a resin-sealed semiconductor device using the frame.

[0017]

A lead frame for a semiconductor device according to a first invention for achieving the above object comprises:
A semiconductor element mounting portion on which a semiconductor element is mounted; a plurality of leads arranged at one end so as to surround the semiconductor element mounting portion; and a frame portion that supports the plurality of leads at the other ends of the plurality of leads. A lead frame prototype formed such that one end of one of the leads adjacent to each other of the plurality of leads extends to near the semiconductor element mounting portion and one end of the other lead is arranged near the frame portion. And an opening is formed in the center of the one lead and the other lead, which are fixed to the one lead via an insulating adhesive member on the side opposite to the side on which the semiconductor element is mounted. An insulating substrate having a plurality of wiring patterns arranged from the end on the opening side to the outer end so as to surround the semiconductor element mounting portion on the surface on which the semiconductor element is mounted. Outer edge of insulating substrate The tip of the wiring pattern is electrically joined to one end of the other lead, and the tip of the wiring pattern at the opening-side end of the insulating substrate is arranged between the one lead and the one lead. Is located closer to the semiconductor element mounting portion side than one end of the lead.

The resin-sealed semiconductor device using the lead frame for a semiconductor device according to the first invention is
The other surface of the semiconductor element in which electrodes are arranged in two rows in a zigzag pattern on one surface is adhered to the semiconductor element mounting portion, and the tip end of the wiring pattern at the opening-side end of the insulating substrate and the semiconductor element The outer pad, and one end of the one lead and the inner pad on the semiconductor element are connected by a wire, further the semiconductor element, the semiconductor element mounting portion,
The insulating substrate, the entire wire, and a part of the leads are covered with a sealing resin.

A semiconductor device lead frame according to a second aspect of the present invention includes a semiconductor element mounting portion on which a semiconductor element is mounted,
One end of the plurality of leads that is provided with a plurality of leads arranged at one end so as to surround the semiconductor element mounting portion and a frame portion that supports the plurality of leads at the other end of the plurality of leads. One end of the lead extends to near the semiconductor element mounting portion, and one end of the other lead is formed so as to be arranged near the frame portion, and the one lead and the other lead. Of the semiconductor element on the side on which the semiconductor element is mounted, which is fixed to the one lead via an insulating adhesive member, and which has an opening at the center and on which the semiconductor element is mounted. A side on which a plurality of wiring patterns are arranged from the end on the opening side to the outer end so as to surround the element mounting portion, and the tip of the wiring pattern at the outer end is mounted with the semiconductor element through a through hole. Face of And an insulating substrate disposed on the opposite side surface, the tip of the wiring pattern at the outer end of the insulating substrate is electrically joined to one end of the other lead, and the end of the insulating substrate at the opening side is formed. The tip of the wiring pattern is arranged between the one lead, and one end of the one lead is located closer to the semiconductor element mounting portion than the tip of the wiring pattern at the opening-side end of the insulating substrate. It is characterized by

Further, in the resin-sealed semiconductor device using the lead frame for a semiconductor device according to the second invention, the other surface of the semiconductor element in which the electrodes are arranged in two rows in a zigzag manner on one surface is the semiconductor. The tip of the wiring pattern at the end on the opening side of the insulating substrate, the inner pad on the semiconductor element, and one end of the one lead and the outer pad on the semiconductor element are bonded to the element mounting portion by a wire. The semiconductor element, the semiconductor element mounting portion, the insulating substrate, the entire wire and a part of the leads are covered with a sealing resin.

A semiconductor device lead frame according to a third aspect of the present invention includes a semiconductor element mounting portion on which a semiconductor element is mounted,
One end of the plurality of leads that is provided with a plurality of leads arranged at one end so as to surround the semiconductor element mounting portion and a frame portion that supports the plurality of leads at the other end of the plurality of leads. One end of the lead extends to near the semiconductor element mounting portion, and one end of the other lead is formed so as to be arranged near the frame portion, and the one lead and the other lead. A side opposite to the side on which the semiconductor element is mounted, the side being opposite to the side on which the semiconductor element is mounted, which is fixed to the one lead via an insulating adhesive member A plurality of wiring patterns are arranged from the end on the opening side to the outer end so as to surround the semiconductor element mounting part on the surface of the wiring pattern, and the tip of the wiring pattern on the outer end and the opening side. Wiring pattern at the end And a tip of the wiring pattern at the outer end of the insulating substrate is formed on one side of the other lead. And the tip of the wiring pattern at the opening-side end of the insulating substrate is disposed between the one lead and is closer to the semiconductor element mounting portion side than one end of the one lead. It is characterized by being located.

Further, in the resin-sealed semiconductor device using the lead frame for a semiconductor device according to the third invention, the other surface of the semiconductor element in which electrodes are arranged in two rows in a zigzag manner on one surface is the semiconductor. The tip of the wiring pattern at the end on the opening side of the insulating substrate and the outer pad on the semiconductor element, and one end of the one lead and the inner pad on the semiconductor element are bonded to the element mounting portion by a wire. The semiconductor element, the semiconductor element mounting portion, the insulating substrate, the entire wire and a part of the leads are covered with a sealing resin.

In the above case, the semiconductor element mounting portion may use a heat spreader.

[0024]

In the present invention configured as described above, the lead frame prototype including the semiconductor mounting portion and the plurality of leads arranged around the semiconductor mounting portion, and the insulating substrate having the wiring pattern are separately preliminarily provided. After manufacturing in the same process as conventionally known, by joining these in the final process,
Connected by a semiconductor element and a wire, one end of the lead and the tip portion of the wiring pattern are alternately arranged, and one of the one end of the lead or the tip portion of the wiring pattern extends in the vicinity of the semiconductor element, and the other The lead frame for a semiconductor device is obtained, which extends shorter than the above-mentioned one and is arranged with a different height on the side on which the semiconductor element is mounted.

Then, a semiconductor element having pads arranged in two rows and in a staggered manner is mounted on the lead frame for a semiconductor device, and an outer pad on the semiconductor element and the one side are wire-bonded to each other to form the semiconductor element. By wire-bonding the upper inner pad and the other to each other, by covering the semiconductor element, the semiconductor element mounting portion, the insulating substrate, the entire wire and a part of the leads with a sealing resin, a large number of An inexpensive resin-encapsulated semiconductor device that includes a lead and can be mounted with high reliability on a semiconductor element having an increased number of pads without causing a problem such as a short circuit is completed.

[0026]

Embodiments of the present invention will be described below with reference to the drawings.

FIG. 1 shows the structure of a lead frame in a first embodiment of a resin-sealed semiconductor device of the present invention, and FIG. 1A is a top view seen from the surface on which a semiconductor element is mounted,
FIG. 6B is a sectional view taken along the line aa of the lead frame shown in FIG. 2 is a top view of the resin-encapsulated semiconductor device according to the first embodiment of the present invention in which a part of the encapsulating resin is removed to show the characteristics of the first embodiment. FIG. FIG. 4 is a vertical cross-sectional view for best showing the wire bonding state with the outer pad on the device, and FIG. 4 is the best view for showing the wire bonding state with the direct bonding inner lead shown in FIG. 2 and the inner pad on the semiconductor device. FIG.

The resin-encapsulated semiconductor device according to this embodiment is constructed by mounting a semiconductor element on a lead frame 1 as shown in FIG. 1 and coating a predetermined portion including the semiconductor element with a resin.

A lead frame 1 shown in FIG. 1 has a rectangular island 2 as a semiconductor element mounting portion and a wiring relay inner lead 4 and a direct bonding inner lead 5 each having one end alternately arranged surrounding the island 2. An external lead 6 connected to the other ends of the internal leads 4 and 5 and arranged, a frame portion 14 supporting the external lead 6, and extending from the corner portion of the island 2 to the frame portion 14. An island suspension lead 3 for supporting the island 2 is provided, and one end of the direct bonding inner lead 5 extends close to the island 2, and the wiring relay inner lead 4 adjacent to the inner lead 5 is provided. One end is arranged near the frame portion 14 (see FIG. 5).
reference). Further, on the lower surface of the inner leads 4 and 5, an opening smaller than the opening of the insulating adhesive film 9 is formed in the center through the annular insulating adhesive film 9 on the lower surface of the inner lead 5, and the upper surface. A plurality of wiring patterns 8 from the end on the opening side to the outer end so as to surround the island 2.
An insulating substrate 7 made of ceramic, glass epoxy, or the like, on which is disposed, is bonded. At this time, the tip of the wiring pattern 8 at the outer end of the insulating substrate 7 is connected to the wiring relay internal lead 4 via the bump 10, and the tip of the wiring pattern 8 at the opening-side end of the insulating substrate 7. Are arranged between the respective direct bonding inner leads 5 and are located closer to the island 2 than one end of the direct bonding inner leads 5. That is,
The tip of the wiring pattern 8 at the opening-side end of the insulating substrate 7 has an insulating adhesive film 9 as an insulating adhesive member.
It is exposed without being covered with.

As shown in FIGS. 2 to 4, the lower surface of the semiconductor element 11 in which pads are arranged in two rows in a zigzag pattern is adhered to the island 2 of the lead frame 1 having the above-described structure, and the semiconductor element 11 is bonded. The tip of the wiring pattern at the upper outer pad and the end on the opening side of the insulating substrate 7, the inner pad on the semiconductor element 11 and one end of the direct bonding inner lead 5 are connected by a wire 12. Further, the internal leads 4, 5, the insulating substrate 7, the semiconductor element 11 and the wires 12 are sealed with a sealing resin 13, and only the external leads 6 are exposed to the outside of the sealing resin 13.

In this embodiment, assuming that a 500-pin resin-sealed semiconductor device is manufactured, the pads on the semiconductor element 11 are arranged in two rows and in a zigzag pattern.
When arranging with 0 μm (120 μm in a single row), the size of the semiconductor element is 7.5 mm on a side, and the direct bonding internal lead 5 has a lead thickness of 120 μm and the minimum lead pitch is 220 μm when punched by a press. At this time, the position where the lead tips are lined up is 13.8 mm on a side, so the maximum wire length is about 4.2 m.
Therefore, wire bonding is possible.

Next, a method of manufacturing the resin-encapsulated semiconductor device having the above structure will be described.

First, a method of manufacturing a lead frame used in the resin-sealed semiconductor device according to this embodiment will be described with reference to FIGS.

FIG. 5 is a plan view showing a lead frame prototype. FIG. 6 shows a first example of the resin-encapsulated semiconductor device of the present invention.
3 is a top view showing an insulating substrate 7 used in the example of FIG.

First, as shown in FIG. 5, the island 2, the wiring relay inner lead 4, the direct bonding inner lead 5, and the outer lead are formed on a thin metal plate by pressing or etching, and the inner leads 4 and 5 on the island 2 side. A lead frame prototype is manufactured by plating the tip of the above with Au or Ag.

Separately from this, a predetermined wiring pattern 8 having a surface plated with Au is formed by thick film printing on an insulating substrate 7 made of ceramic or glass epoxy as shown in FIG. 6, and the outer end portion of the insulating substrate is formed. The bumps 10 having a height of about 30 to 50 μm are formed by laminating solder, copper, or gold at the position where the tip of the wiring pattern 8 is joined to the internal lead 4 of the wiring relay.

Next, as shown in FIG. 1, the insulating substrate 7 is connected to the lead frame prototype shown in FIG. At this time,
An insulating adhesive film having a thickness of about 25 μm, such as polyimide, in which a thermoplastic adhesive is applied to both sides of the direct bonding inner lead 5 by about 20 μm so that each wiring pattern 8 is arranged between each direct bonding inner lead 5. The insulating substrate 7 is fixed by thermocompression bonding via, and the tip of the wiring relay internal lead 4 and the wiring pattern 8 are connected via the bump 10.

The bumps 10 are provided so that the heights of the wiring relay internal leads 4 and the direct bonding internal leads 5 can be easily joined to the insulating substrate 1. The bumps 10 are insulated from the direct bonding internal leads 5 via an insulating adhesive film. If the wiring relay inner lead 4 is joined to the wiring pattern 8 at the outer end portion on the insulating substrate 7 by joining the wiring relay inner lead 4 by thermocompression bonding or welding, it is not particularly necessary. In this way, the lead frame shown in FIG. 1 is completed.

Next, with reference to FIG. 7, a method of manufacturing a resin-sealed semiconductor device using the above lead frame will be described.

FIG. 7 is a view for explaining the manufacturing process of the resin-sealed semiconductor device in the cross section taken along the line bb of the lead frame prototype shown in FIG.

First, as shown in FIG. 7A, the semiconductor element 11 is mounted on the island 2 using silver paste or the like. Next, as shown in FIG. 7B, wire bonding is performed. The order of wire bonding is semiconductor device 1
The outer pad on 1 and the tip of the wiring pattern 8 on the island 2 side have a height of the wire 12 from 150 μm to 20 μm.
Then, the inner pad on the semiconductor element 11 and the direct bonding inner lead 5 are connected with the wire 12 having a height of about 230 μm to 280 μm. After that, the internal leads 4 and 5, the insulating substrate 7, the semiconductor element 11 and the wire 12 are sealed with the sealing resin 13 as shown in FIG. 7C, and then the external lead 6 is molded. Completed through steps.

(Second Embodiment) FIG. 8 is a top view showing a resin-encapsulated semiconductor device according to a second embodiment of the present invention in which a part of the encapsulation resin is removed to show the characteristics of the second embodiment. Is a vertical sectional view for best showing the wire bonding state between the wiring pattern shown in FIG. 8 and the inner pad on the semiconductor element,
FIG. 10 is a vertical sectional view for best showing a wire bonding state between the direct bonding inner lead shown in FIG. 8 and the outer pad on the semiconductor element.

The resin-encapsulated semiconductor device according to this embodiment has a lead frame having a structure described later.
As shown in FIG. 10, on the island 21 of the lead frame to be described later, the other surface of the semiconductor element 28 in which the pads are arranged in two rows and in a zigzag manner on the upper surface is bonded, and the inner pad on the semiconductor element 28 is bonded. The tip of the wiring pattern 26 on the island 21 side, the outer pad on the semiconductor element 28, and one end of the direct bonding internal lead 22 are connected by a wire 29. Further, the inner leads 22, 23, the insulating substrate 25, the semiconductor element 28, and the wires 29 are covered with a sealing resin 30.
Only 4 is exposed to the outside of the sealing resin 30.

The lead frame used for the resin-sealed semiconductor device is composed of the same lead frame prototype as that shown in FIG. That is, on the upper surface of the direct bonding inner lead 22 and the wiring relay inner lead 23 of the same lead frame prototype as shown in FIG. 5, the direct bonding inner lead 22 is provided with a thermoplastic insulating adhesive member at the center. A plurality of wiring patterns 26 are formed from the end on the opening side to the outer end so as to surround the island 21 on the upper surface, and the tip end of the wiring pattern 26 at the outer end is a through hole. An insulating substrate 25 made of glass epoxy or the like is fixed to the lower surface through 27. At this time, the wiring pattern 2 at the outer end of the insulating substrate 25
The leading end of 6 is connected to one end of the wiring relay inner lead 23, and the leading end of the wiring pattern 26 at the opening-side end of the insulating substrate 25 is the direct bonding inner lead 2.
One end of the direct bonding internal lead 22 is located closer to the island 21 than the tip of the wiring pattern 26 at the opening-side end of the insulating substrate 25. That is, one end of the direct bonding inner lead 22 on the island 21 side is exposed without being covered by the insulating substrate 25.

(Third Embodiment) FIG. 11 is a top view showing a resin-encapsulated semiconductor device according to a third embodiment of the present invention, in which a part of the encapsulating resin is removed to show the characteristics of the third embodiment. Is shown in FIG.
FIG. 13 is a vertical cross-sectional view for best showing the wire bonding state between the substrate pad and the outer pad on the semiconductor element. FIG. 13 shows the wire between the direct bonding inner lead shown in FIG. 11 and the inner pad on the semiconductor element. It is a longitudinal cross-sectional view for showing the bonding state most.

The resin-encapsulated semiconductor device according to the present embodiment has a lead frame having a structure described later.
As shown in FIGS. 1 to 13, the lower surface of a semiconductor element 37 in which pads are arranged in two rows and in a staggered arrangement on the upper surface is bonded onto an island 31 of a lead frame, which will be described later. The pad 36 on the substrate, the inner pad on the semiconductor element 37 and one end of the direct bonding inner lead 32 are connected by a wire 38. Further, the inner leads 32, 33, the insulating substrate 35, the semiconductor element 37, and the wire 38 are sealed resin 39.
, And only the external leads 34 are exposed to the outside of the sealing resin 39.

The lead frame used in the resin-sealed semiconductor device is composed of the same lead frame prototype as shown in FIG. That is, on the lower surface of the direct bonding inner lead 32 and the wiring relay inner lead 33 of the same lead frame prototype as that shown in FIG. 5, the direct bonding inner lead 32 is provided at the center with a thermoplastic insulating adhesive member interposed. A plurality of wiring patterns 40 are provided from the end on the opening side to the outer end so as to surround the island 31 on the lower surface, and the tip of the wiring pattern 40 at the outer end and the opening. An insulating substrate 35 made of glass epoxy or the like is fixedly attached to the lower surface of each of the wiring patterns 40 at the end portions on the lower side through through holes 41.
Further, on-board pads 36 are formed in through holes 41 on the upper surface of the insulating substrate 35 on the side of the opening of the insulating substrate.

At this time, the tip of the wiring pattern 40 at the outer end of the insulating substrate 35 is connected to one end of the wiring relay internal lead 33, and the on-board pad 36 is arranged between the direct bonding internal leads 32. In addition, it is located closer to the island 31 than one end of the direct bonding inner lead 32.

The manufacturing methods of the second and third embodiments described above can be made in the same manner as the manufacturing method of the first embodiment. That is, the lead frame prototype and the insulating substrate are separately formed, the lead frame is joined to form the lead frame, and the lead frame can be completed by the conventional manufacturing process of the resin-sealed semiconductor device.

(Fourth Embodiment) This embodiment will be described with reference to FIGS.
Since it is almost the same as that of the first embodiment shown in FIG. 3, the same parts as those of the first embodiment are designated by the same reference numerals and the description thereof will be omitted. It will be described below with another reference numeral.

FIG. 14 is a top view in which a part of the sealing resin is removed to show the characteristics of the fourth embodiment of the resin-sealed semiconductor device of the present invention, and FIG. 15 is the wiring shown in FIG. FIG. 16 is a vertical sectional view for best showing the wire bonding state between the pattern and the inner pad on the semiconductor element. FIG. 16 shows the wire bonding state between the direct bonding inner lead shown in FIG. 14 and the outer pad on the semiconductor element. It is a longitudinal cross-sectional view for showing.

In this embodiment, in order to reduce the thermal resistance of the resin-encapsulated semiconductor device, as shown in FIGS.
The heat spreader 42 is fixed to the back surface of the insulating substrate 7 instead of the island of the resin-encapsulated semiconductor device in the above embodiment, and the semiconductor element 11 is bonded onto the heat spreader 42.

The manufacturing method of this embodiment is the same as the manufacturing method of the first embodiment, and the wiring pattern 8 is formed by removing the islands from the lead frame master used in the first embodiment. After fixing the insulating substrate 7 and then fixing the heat spreader 42, a lead frame can be manufactured. The method of manufacturing a resin-sealed semiconductor device using this lead frame is completely different from that of the first embodiment. Is the same.

The heat spreader can be attached not only in the first embodiment, but also in the second and third embodiments with the insulator sandwiched between the substrate and the internal leads.

[0055]

As described above, according to the present invention, a semiconductor mounting portion, a plurality of leads arranged at one end so as to surround the semiconductor mounting portion, and the plurality of leads at the other end of the plurality of leads are provided. A support frame portion is provided, and one end of one adjacent lead of the plurality of leads extends close to the semiconductor element mounting portion, and one end of the other lead is formed to be arranged in the frame portion. A lead frame prototype, an insulating substrate provided with a predetermined wiring pattern, by joining the wiring pattern at the outer end of the insulating substrate and the other lead, directly connected to the semiconductor element by a wire, One end of the lead and the tip of the wiring pattern are alternately arranged, one of the one end of the lead or the tip of the wiring pattern extends in the vicinity of the semiconductor element, and the other is the Since it is possible to obtain a lead frame for a semiconductor device, which extends shorter than the one and is arranged with the height thereof changed on the side on which the semiconductor element is mounted, the pads of the semiconductor element are arranged in two rows and in a staggered manner. Even the ones can be assembled with a resin-sealed semiconductor device. Moreover, according to this method, the insulating substrate may be a single layer, and
The insulating substrate, the semiconductor element mounting portion, and a lead frame prototype including a plurality of leads and the like arranged around the semiconductor element mounting portion are separately manufactured and then bonded to each other to form the lead frame of the present invention. Since the lead frame can be produced, the yield in producing the lead frame is improved. Further, even in the case of the 500-pin class, the lead frame prototype can be punched out by a press, so that the lead frame can be produced at a very low cost.

Further, in the present invention, since the thickness of the lead can be the same as that used in the conventional resin-encapsulated semiconductor device, the diffusion of the heat transmitted through the lead makes the lead thinner. There is an advantage in terms of heat resistance without deterioration.

Further, in the present invention, the heat spreader can be used to further reduce the thermal resistance of the semiconductor device.

[Brief description of drawings]

FIG. 1 shows a structure of a lead frame in a first embodiment of a resin-encapsulated semiconductor device of the present invention, FIG. 1 (a) is a top view seen from a surface on which a semiconductor element is mounted, and FIG. FIG. 4B is a sectional view taken along the line aa of the lead frame shown in FIG.

FIG. 2 is a top view of the resin-encapsulated semiconductor device according to the first embodiment of the present invention in which a part of the encapsulating resin is removed in order to represent the characteristics of the first embodiment.

FIG. 3 is a vertical sectional view for best showing a wire bonding state between the wiring pattern shown in FIG. 2 and an outer pad on a semiconductor element.

FIG. 4 is a vertical cross-sectional view for best showing the wire bonding state between the direct bonding inner lead shown in FIG. 2 and the inner pad on the semiconductor element.

FIG. 5 is a plan view showing a lead frame prototype.

FIG. 6 is a plan view showing an insulating substrate used in the first embodiment of the resin-encapsulated semiconductor device of the present invention.

FIG. 7 is a drawing for explaining the manufacturing process of the resin-sealed semiconductor device in the cross section taken along the line bb of the lead frame prototype shown in FIG.

FIG. 8 is a top view of the resin-encapsulated semiconductor device according to the second embodiment of the present invention, in which a part of the encapsulating resin is removed in order to represent the characteristics of the second embodiment.

9 is a vertical sectional view for best showing a wire bonding state between the wiring pattern shown in FIG. 8 and an inner pad on a semiconductor element.

FIG. 10 is a vertical cross-sectional view best showing the wire bonding state between the direct bonding inner lead shown in FIG. 8 and the outer pad on the semiconductor element.

FIG. 11 is a top view of a resin-encapsulated semiconductor device according to a third embodiment of the present invention in which a part of the encapsulating resin is removed in order to represent the characteristics of the third embodiment.

FIG. 12 is a vertical cross-sectional view for best showing the wire bonding state between the on-substrate pad and the outer pad on the semiconductor element shown in FIG.

FIG. 13 is a vertical cross-sectional view best showing the wire bonding state between the direct bonding internal lead shown in FIG. 11 and the inner pad on the semiconductor element.

FIG. 14 is a top view of a resin-encapsulated semiconductor device according to a fourth embodiment of the present invention in which a part of the encapsulating resin is removed in order to represent the characteristics of the fourth embodiment.

FIG. 15 is a vertical cross-sectional view for best showing the wire bonding state between the wiring pattern shown in FIG. 14 and the inner pad on the semiconductor element.

16 is a vertical cross-sectional view best showing the wire bonding state between the direct bonding inner lead shown in FIG. 14 and the outer pad on the semiconductor element.

FIG. 17 is a plan view showing a connection state of wires between pads on a semiconductor element and lead-out leads in a ceramic package.

18 is a partial cross-sectional view of the ceramic package shown in FIG.

FIG. 19 is a plan view showing a configuration of a lead frame included in a conventional resin-sealed semiconductor device.

20 is a sectional view taken along line XX when a semiconductor element is mounted on the lead frame shown in FIG.

21 is a diagram showing a case where bonding wires contact each other in the structure of the lead frame shown in FIG.

FIG. 22 is a plan view showing another configuration of the lead frame included in the conventional resin-sealed semiconductor device.

23 is a cross-sectional view taken along the line YY when the semiconductor element is mounted on the lead frame shown in FIG.

[Explanation of symbols]

 1 lead frame 2,21,31 island 3 island suspension lead 4,23,33 wiring relay internal lead 5,22,32 direct bonding internal lead 6,24,34 external lead 7,25,35 insulating substrate 8,26,40 Wiring pattern 9 Insulating adhesive film 10 Bump 11, 28, 37 Semiconductor element 12, 29, 38 Wire 13, 30, 39 Encapsulating resin 14 Frame part 27, 41 Through hole 36 Substrate pad 42 Heat spreader

Claims (8)

(57) [Claims] 1. A semiconductor element mounting portion on which a semiconductor element is mounted, a plurality of leads arranged at one end so as to surround the semiconductor element mounting portion, and the other ends of the plurality of leads support the plurality of leads. A plurality of leads, one end of one of the leads adjacent to each other extends to near the semiconductor element mounting portion, and one end of the other lead is arranged near the frame portion. The lead frame prototype and the one lead and the other lead, which are opposite to the side on which the semiconductor element is mounted, are fixed to the one lead through an insulating adhesive member, and have an opening in the center. Insulating substrate in which a plurality of wiring patterns are arranged from the end portion on the opening side to the outer end portion so as to surround the semiconductor element mounting portion on the surface on which the semiconductor element mounting portion is formed by boring a portion. Consisting of the insulation The tip of the wiring pattern at the outer end of the plate is electrically joined to one end of the other lead, and the tip of the wiring pattern at the end on the opening side of the insulating substrate is arranged between the one lead. The lead frame for a semiconductor device is characterized in that it is located closer to the semiconductor element mounting portion than one end of the one lead. 2. The other surface of a semiconductor element having electrodes arranged in two rows and zigzag on one surface is adhered to the semiconductor element mounting portion, and a tip portion of a wiring pattern at an end portion on the opening side of the insulating substrate is formed. The outer pad on the semiconductor element, and one end of the one lead and the inner pad on the semiconductor element are connected by a wire, and further, the semiconductor element, the semiconductor element mounting portion, the insulating substrate, the entire wire and the plurality of The resin-sealed semiconductor device using the lead frame for a semiconductor device according to claim 1, wherein a part of the lead is covered with a sealing resin. 3. A semiconductor element mounting portion on which a semiconductor element is mounted, a plurality of leads whose one end is arranged so as to surround the semiconductor element mounting portion, and the other ends of the plurality of leads support the plurality of leads. A plurality of leads, one end of one of the leads adjacent to each other extends to near the semiconductor element mounting portion, and one end of the other lead is arranged near the frame portion. The lead frame prototype and the one lead and the other lead, which are fixed to the one lead via an insulating adhesive member on the side where the semiconductor element is mounted, have an opening at the center. A plurality of wiring patterns are provided from an end portion on the opening side to an outer end portion so as to surround the semiconductor element mounting portion on a surface on which the semiconductor element mounting portion is mounted, and wiring at the outer end portion is provided. Pattern tip The semiconductor substrate is mounted on the side opposite to the side on which the semiconductor element is mounted through the through hole, and the tip of the wiring pattern at the outer end of the insulating substrate is electrically connected to one end of the other lead. The leading end of the wiring pattern at the end of the insulating substrate on the opening side is arranged between the one lead, and one end of the one lead is the wiring pattern at the opening-side end of the insulating substrate. A lead frame for a semiconductor device, wherein the lead frame is located closer to the semiconductor element mounting portion than the tip of the lead frame. 4. The other surface of the semiconductor element having electrodes arranged in two rows and zigzag on one surface is adhered to the semiconductor element mounting portion, and a tip portion of a wiring pattern at an end portion on the opening side of the insulating substrate is formed. The inner pad on the semiconductor element, and one end of the one lead and the outer pad on the semiconductor element are connected by a wire, and further, the semiconductor element, the semiconductor element mounting portion, the insulating substrate, the entire wire and the plurality of The resin-sealed semiconductor device using the lead frame for a semiconductor device according to claim 3, wherein a part of the lead is covered with a sealing resin. 5. A semiconductor element mounting portion on which a semiconductor element is mounted, a plurality of leads whose one end is arranged so as to surround the semiconductor element mounting portion, and the other ends of the plurality of leads support the plurality of leads. A plurality of leads, one end of one of the leads adjacent to each other extends to near the semiconductor element mounting portion, and one end of the other lead is arranged near the frame portion. The lead frame prototype and the one lead and the other lead, which are opposite to the side on which the semiconductor element is mounted, are fixed to the one lead through an insulating adhesive member, and have an opening in the center. A plurality of wiring patterns are provided from the end portion on the opening side to the outer end portion so as to surround the semiconductor element mounting portion on the surface opposite to the side on which the semiconductor element is mounted. Wiring at the outer end The tip of the turn and the tip of the wiring pattern at the end on the side of the opening each include an insulating substrate arranged on the surface on which the semiconductor element is mounted through a through hole, and the outer end of the insulating substrate. The tip of the wiring pattern in the part is electrically joined to one end of the other lead, and the tip of the wiring pattern in the end on the opening side of the insulating substrate is arranged between the one lead and A lead frame for a semiconductor device, wherein the lead frame is located closer to the semiconductor element mounting portion than one end of one lead. 6. The other surface of the semiconductor element, in which electrodes are arranged in two rows and zigzag on one surface, is adhered to the semiconductor element mounting portion, and a tip portion of a wiring pattern at an end portion on the opening side of the insulating substrate is formed. The outer pad on the semiconductor element, and one end of the one lead and the inner pad on the semiconductor element are connected by a wire, and further, the semiconductor element, the semiconductor element mounting portion, the insulating substrate, the entire wire and the plurality of The resin-sealed semiconductor device using the lead frame for a semiconductor device according to claim 5, wherein a part of the lead is covered with a sealing resin. 7. The lead frame for a semiconductor device according to claim 1, wherein the semiconductor element mounting portion uses a heat spreader. 8. The resin-sealed semiconductor device according to claim 2, wherein the semiconductor element mounting portion uses a heat spreader.