JPH0582720A - Resin sealed type semiconductor device - Google Patents

Abstract

PURPOSE:To provide a resin-sealed type semiconductor apparatus which is capable of preventing the short circuit between metal small-gage wires without increasing their outside dimensions even when a plurality of highly integrated semiconductor devices are mounted in a semiconductor apparatus. CONSTITUTION:Semiconductor devices 1 and 1' are bonded with their circuit formation sides 1a and 1'a by way of insulation components 3 which electrically insulate electric signal leads 2 with the devices 1 and 1' so that they are held with each of the leads 2. The devices 1 and 1' are electrically connected to the leads 2 by means of metal small-gauge wires 4 and 4'. The devices 1 and 1' are laid out so that their mutual circuit formation sides 1a and 1'a may face each other. The leads 2 are extended between the opposed sides of the circuit formation sides 1a and 1'a. A second insulation component 8 is laid out between the leads 2 and 2' while the insulation component 8 is held with the stacked part of the leads 2.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a resin-encapsulated semiconductor device in which at least two semiconductor elements are laminated, and more particularly to a resin-encapsulated semiconductor device suitable for preventing short circuits between metal thin wires.

[0002]

2. Description of the Related Art Conventionally, in a resin-sealed semiconductor device, a semiconductor element is fixed on a tab which is an element mounting portion, a plurality of leads are arranged around the tab, and the semiconductor element and the lead are formed by a fine metal wire. A structure is adopted in which it is electrically connected and the periphery is sealed with resin.

In recent years, in order to achieve high integration of semiconductor devices, there is an increasing demand for semiconductor devices having a plurality of semiconductor elements. As a conventional structure in which a semiconductor element is fixed on a tab and a plurality of semiconductor elements are mounted, Japanese Patent Laid-Open Nos. 62-119952, 1-257361, and 60-147161 are available.
There is a bulletin, etc.

In order to increase the degree of integration of a semiconductor device, a structure in which a plurality of semiconductor elements are mounted is being studied, while the semiconductor element itself tends to have a larger size due to higher integration. On the other hand, the external dimensions of the semiconductor device cannot be freely expanded or, on the contrary, tend to be miniaturized due to the restrictions of the design of the substrate on which the semiconductor device is mounted and the demand for high-density mounting.

In such a situation, in the conventional structure in which the semiconductor element is fixed on the tab, when the size of the semiconductor element is increased while the external dimensions of the semiconductor device are kept constant, the leads are fixed to the resin. There was a problem that the length of the portion to be filled (the length of the resin-embedded portion of the inner lead portion) was insufficient, and sufficient fixing strength could not be given to the lead.

Therefore, in order to avoid such a problem,
A structure in which a plurality of inner leads are adhered to a circuit forming surface of a semiconductor element via an insulating member is disclosed in Japanese Patent Laid-Open No. 61-2419.
It is proposed by Japanese Patent Publication No. 59. Lead this structure
Called on-chip.

FIG. 15 shows an example of a resin-sealed semiconductor device in which two semiconductor elements having a lead-on-chip structure, which are the object of the present invention, are laminated.

The semiconductor elements 1 and 1 ′ have a circuit forming surface 1 thereof.
a, 1'a, the inner leads 2, 2'for electrical signals are adhered to each other with an adhesive or the like via insulating members 3, 3 'which electrically insulate the semiconductor elements 1, 1'. It is held by inner leads 2, 2 '. Semiconductor elements 1, 1'and inner leads 2, 2'for electric signals
Are electrically connected by thin metal wires 4 and 4 '.

2 of such a lead-on-chip structure
The individual semiconductor elements are arranged such that the circuit forming surfaces face each other, and the laminated portion 2a of the inner leads 2, 2'for electrical signals is arranged.
In, the inner leads for electric signals are joined together. Then, these are sealed with the resin 5 to form the resin sealing body 6.
Is formed.

One inner lead 2'for electric signal is
It is cut inside the resin encapsulant 6, and only the other inner lead 2 for electric signal is used for the outer lead 7 for electric signal.
It is connected with.

By stacking semiconductor elements having a read-on-chip structure, the external dimensions of the semiconductor device do not increase even when a large-sized semiconductor element is mounted, and the lead fixing strength is sufficient. It is possible to provide a resin-encapsulated semiconductor device that can obtain

[0012]

However, as shown in FIG.
In the resin-sealed semiconductor device in which the semiconductor elements having the lead-on-chip structure as shown in FIG. 2 are stacked, since the circuit forming surfaces of the two semiconductor elements 1 and 1 ′ face each other, the metal thin wire is 4, 4'also face each other.

Therefore, if there is a relatively long metal thin wire or a metal thin wire that is longer than necessary due to variations in manufacturing, the metal thin wires 4, 4'are stacked together during the semiconductor element stacking or the resin sealing process. May be short-circuited.
When the thin metal wires 4 and 4 ′ are short-circuited, the function of the semiconductor element is significantly deteriorated. Therefore, it is necessary to consider prevention of short circuit between the thin metal wires 4 and 4 '.

According to the present invention, even if a plurality of highly integrated semiconductor elements are mounted in a semiconductor device, the external dimensions of the semiconductor device do not become large, sufficient lead fixing strength is obtained, and short-circuiting of metal thin wires is prevented. An object of the present invention is to provide a resin-sealed semiconductor device in consideration of the above.

[0015]

In order to achieve the above object, the present invention interposes an insulating member between the inner leads for electric signals which hold two stacked semiconductor elements of lead-on-chip structure.

In the resin-sealed semiconductor device of the present invention, the semiconductor elements are arranged such that the circuit forming surfaces of at least two semiconductor elements face each other, and the first insulating member is provided on the circuit forming surface of each semiconductor element. Adhering, arranging electric signal leads on the first insulating member, electrically connecting the electric signal leads and the semiconductor element with, for example, metal thin wires, and connecting the electric signal leads to each other. Are joined together and the periphery thereof is sealed with a resin to form a resin sealing body, which is characterized by any of the following configurations.

(1) A second insulating member other than the sealing resin is interposed between the facing surfaces of the electrical signal leads.

(2) In (1), the second insulating member is bonded to the electrical signal lead.

(3) In (1), the second insulating member is bonded to the electrical signal lead with a conductive adhesive.

(4) A second member other than the sealing resin, which is a member that insulates the metal thin wires on the sides of the semiconductor elements facing each other from each other.
Insulating member.

(5) A second insulating member other than the sealing resin is interposed in the region where the thin metal wire is provided between the electric signal leads.

(6) A second insulating member other than the sealing resin is interposed around the area where the thin metal wires are arranged between the electric signal leads and around the joint between the electric signal leads.

(7) A plurality of second insulating members other than the sealing resin are interposed between the electric signal leads.

(8) A first insulating member is adhered to the circuit forming surface of the semiconductor element, an electric signal lead is disposed on the first insulating member, and the electric signal lead and the semiconductor element are connected to each other. Are electrically connected by thin metal wires, and at least two semiconductor elements having the second insulating member bonded to the electrical signal leads are laminated so that the circuit forming surfaces of the semiconductor elements face each other. Then, the periphery of these is sealed with resin to form a resin sealing body.

[0025]

By interposing an insulating member between the inner leads for electric signals, the contact between the metal thin wires is prevented by the insulating member, so that short-circuiting of the metal thin wires can be prevented. As a result, the function of the semiconductor element is not degraded or destroyed.

Therefore, it is possible to obtain a highly reliable resin-encapsulated semiconductor device in which a large-sized semiconductor element can be mounted and in which the short circuit of the metal fine wire is also taken into consideration.

[0027]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of the present invention will be described below with reference to FIGS. 1, 2 and 3.

FIG. 1 is a sectional view of a resin-sealed semiconductor device which is an embodiment of the present invention. 2 shows the shape of the second insulating member of the resin-encapsulated semiconductor device shown in FIG.
It is a top view which removed the lower part from the insulating member. Figure 3
FIG. 2 is a partially enlarged sectional view of the resin-encapsulated semiconductor device shown in FIG. 1 is a sectional view taken along the line EE of the resin-sealed semiconductor device shown in FIG.

The semiconductor elements 1 and 1 ′ have a circuit forming surface 1 thereof.
a, 1'a, the inner leads 2, 2'for electric signals are adhered by an adhesive agent or the like via insulating members 3, 3 'which electrically insulate the semiconductor elements 1, 1'. It is held by inner leads 2, 2 '.

The semiconductor elements 1 and 1'and the electric signal inner leads 2 and 2'are electrically connected by thin metal wires 4 and 4 '.

The semiconductor elements 1 and 1 ′ have a circuit forming surface 1 thereof.
a, 1'a are arranged so as to face each other, and the inner leads 2, 2'for electric signals are connected to the circuit forming surfaces 1a, 1 '
It is stretched between the opposing surfaces of ′ a.

One end of the inner lead 2 for electric signals is integrally formed with the outer lead 7 for electric signal, and the other end of the inner lead 2 ′ for electric signal is inside the resin sealing body 6. Has been cut off with.

A second insulating member 8 is arranged between the electric signal inner leads 2 and 2 '.
Is held and fixed by the laminated portion 2a of the electric signal inner leads 2, 2 '. The shape of the second insulating member is a rectangle as shown by the dotted line in FIG.

In the resin-sealed semiconductor device shown in this embodiment, the second insulating member 8 is adhered to the electric signal inner leads 2, 2'by the adhesive 9 as shown in FIG. The electric signal inner leads 2, 2'are joined by welding or the like at the laminated portion 2a to which the second insulating member 8 is not adhered.

Since the second insulating member 8 is adhered to the electric signal inner leads 2, 2 ', the electric signal inner leads 2, 2'are present in the projected area of the semiconductor element 1, 1'and the second portion. The bonded portion of the insulating member 8 is thinner than the others.

In this embodiment, the semiconductor elements 1, 1 ′, the inner leads 2, 2 ′ for electric signals, the insulating members 3, 3 ′, the thin metal wires 4, 4 ′ and the second insulating member 8 are sealed with the resin 5. Then, a semiconductor device is formed.

According to this embodiment, by interposing an insulating member between the electric signal inner leads 2, 2 ',
It is possible to prevent the contact between the metal thin wires 4 and 4'and prevent a short circuit between the metal thin wires. As a result, the function of the semiconductor element is not deteriorated or destroyed, and a highly reliable resin-sealed semiconductor device can be obtained in consideration of prevention of short circuit of the metal thin wire.

Further, as shown in this embodiment, by interposing the second insulating member 8 having substantially the same size as that of the semiconductor elements 1 and 1 ', this occurs when the electrical signal inner leads 2 and 2'are joined together. It is possible to protect the semiconductor elements 1, 1'from heat or the like.

Next, a method of manufacturing the resin-sealed semiconductor device shown in this embodiment will be described.

Circuit forming surfaces 1a, 1 of the semiconductor elements 1, 1 '
In'a, insulating members 3, 3 for electrically insulating the inner leads 2, 2'for electric signals from the semiconductor elements 1, 1 ', respectively.
The semiconductor elements 1 and 1 ′ and the inner leads 2 and 2 ′ for electric signals are bonded to each other with an adhesive through the metal thin wires 4 and 4 ′.
To connect electrically. Laminated portion 2a of inner leads 2 for one electric signal of one inner lead 2 for electric signals
The second insulating member 8 is adhered to the portion with an adhesive 9.

Then, the inner leads 2 and 2 ′ for electric signals are overlapped so that the circuit forming surfaces 1 a and 1 ′ of the two semiconductor elements 1 and 1 ′ are opposed to each other, and the other electric signal is formed. The second insulating member 8 is adhered to the laminated portion 2a of the inner lead 2'for electrical connection with the adhesive 9, and the second insulating member 8 is interposed between the inner leads 2, 2'for electric signals.

The electric signal inner leads are joined to each other at the laminated portion 2a by soldering, laser welding or resistance welding. One end of one of the electric signal inner leads 2 ′ is cut inside the resin encapsulation body 6 and then these are encapsulated with the resin 5. One end of the other electric signal inner lead 2 is outside the resin encapsulation body 6 and the electric signal outer lead 7 is provided.
And is molded into a predetermined shape.

The insulating members 3 and 3'and the second insulating member 8 contain, as a main component, one or more resins selected from epoxy resins, phenol resins, polyimide resins, etc. A material containing a filler and various additives is used.

The electric signal inner leads 2 and 2'and the electric signal outer leads 7 are formed of, for example, an Fe-Ni alloy (Fe-42Ni or the like), a Cu alloy, or the like.

Aluminum (A
1), gold (Au), copper (Cu), or other thin wire is used.

The resin 5 is an epoxy resin to which a phenolic curing agent, silicone rubber and a filler are added, and a flame retardant, a coupling agent, a coloring agent and the like are added in a small amount. The filler is formed of silicon oxide particles.

The direction in which the electric signal outer leads 7 are drawn out of the resin encapsulant 6 is not limited to two directions as shown in FIG. 1, but may be one direction or three or more directions. good. Further, in the figure, the J-bend type in which the outer lead 7 for electric signal is bent downward and the tip thereof is bent to the lower surface of the resin encapsulant 6 is shown as an example, but the outer lead 7 for electric signal is formed in any direction and shape. It may or may not be bent.

In the embodiment shown in FIG. 1, the inner leads 2, 2'for electric signals are partially provided with a thin portion, and the second insulating member 8 is bonded to the thin portion. As shown in FIG. 4, the insulating member 8 is attached to the electric signal inner leads 2 and 2 ′ without providing a thin portion on the electric signal inner leads 2 and 2 ′.
It does not matter if it is glued to 2 '.

Further, in the embodiment shown in FIGS. 1 and 4,
An example has been shown in which the electric signal inner leads 2, 2'are joined together by a means different from the method of adhering the second insulating member to the electric signal inner leads 2, 2 '.

However, as shown in FIG. 5, the electric signal inner leads 2, 2'may be joined together by using an adhesive 9 for adhering the second insulating member 8 to the electric signal inner leads. .. In this case, a conductive adhesive is used as the adhesive 9.

In the second insulating member 8, at least the metal thin wires 4 and 4'and the metal thin wires 4 and 4'are semiconductor elements 1 and 1 '.
And the size and shape of the thin wires 4 and 4 ', which are arranged within the projected area of the region including the portions connected to the inner leads 2 and 2'for electric signals and which can prevent short-circuiting between the thin metal wires 4 and 4'. It is not limited to the rectangular shape having substantially the same size as the semiconductor elements 1 and 1'as shown in FIG.

6 and 7 show a resin-sealed semiconductor device according to the present invention showing another example of the shape of the second insulating member 8. FIG. 6 is a plan view showing the shape of the second insulating member with the lower portion removed from the second insulating member. The shape of the second insulating member 8 is shown by the dotted line in FIG. FIG. 7 is a cross-sectional view of the resin-sealed semiconductor device shown in FIG.

The second insulating member 8 is formed in a region including the metal thin wires 4 and 4 ′ itself and a portion where the metal thin wires 4 and 4 ′ are connected to the semiconductor elements 1 and 1 ′ and the inner leads 2 and 2 ′ for electric signals. It is located within the projected area.

FIG. 8 and FIG. 9 show a resin-sealed semiconductor device according to the present invention showing an example of still another shape of the second insulating member. FIG. 8 is a plan view showing the shape of the second insulating member with the lower portion removed from the second insulating member. 9 is shown in FIG.
3 is a cross-sectional view of the resin-encapsulated semiconductor device shown in FIG.

The second insulating member 8 is installed only in a region where the distance between the semiconductor thin wires 1 and 4 ', which are likely to cause a short circuit between the thin metal wires 4 and 4', and the thin metal wires 4 and 4 ', becomes the largest. .. The second shape as shown in FIG. 6 and FIG.
Even in a resin-sealed semiconductor device using the insulating member 8,
It is possible to prevent a short circuit between the thin metal wires.

10 and 11 show a resin-sealed semiconductor device according to the present invention showing an example of still another shape of the second insulating member. FIG. 10 is a plan view showing the shape of the second insulating member with the lower portion removed from the second insulating member.

FIG. 11 is a cross-sectional view of the resin-sealed semiconductor device shown in FIG. The second insulating member 8 is provided in a portion where the short-circuiting between the metal thin wires 4 and 4'is likely to occur and the laminated portion 2a between the inner leads 2 and 2'for electric signals.

In the resin-sealed semiconductor shown in this embodiment,
It is possible to prevent a short circuit between the metal thin wires and protect the semiconductor element from heat generated when the inner leads for electric signals are joined.

FIG. 12 is a sectional view of a resin-sealed semiconductor device showing another embodiment of the present invention, and FIG. 13 is a partially enlarged sectional view of the resin-sealed semiconductor device shown in FIG.

Although the embodiment shown in FIG. 1 shows an example in which one second insulating member is interposed between the electric signal inner leads 2 and 2 ', two or more second insulating members 8 are interposed. It does not matter even if it is a thing.

12 and 13 show a resin-sealed semiconductor device according to the present invention showing an example in which two second insulating members 3 are interposed between the electric signal inner leads 2 and 2 '. In the figure, a second insulating member 8, 8'is arranged between the electric signal inner leads 2, 2 '. The insulating member 8, 8'
′ Is held by the laminated portion 2a of the electric signal inner leads 2, 2 ′.

The second insulating members 8 and 8'are each made of an adhesive 9
Are adhered to the electric signal inner leads 2 and 2 ′, and the second insulating members 8 and 8 ′ are also adhered to each other with an adhesive 9.

The inner leads 2, 2'for electrical signals have a laminated portion 2 in which the second insulating members 8, 8'are not adhered.
It is joined by welding or the like inside a.

Since the second insulating members 8 and 8'are bonded to the electric signal inner leads 2 and 2 ', respectively, the electric signal inner leads 2 and 2'are present within the projected area of the semiconductor elements 1 and 1'. The part and the bonded part of the second insulating member 8 are thinner than the others.

Next, a method of manufacturing the resin-sealed semiconductor device shown in this embodiment will be described.

Circuit forming surfaces 1a, 1 of the semiconductor elements 1, 1 '
The electrical signal inner leads 2 and 2'are bonded to the semiconductor element 1 and 1'by means of an adhesive through insulating members 3 and 3'which electrically insulate the semiconductor elements 1 and 1 ', respectively. The signal inner leads 2, 2'are electrically connected by the thin metal wires 4, 4 '.

The second insulating members 8 and 8'are adhered to the laminated portions 2a of the electric signal inner leads 2 and 2'of the electric signal inner leads, respectively, with the adhesive 9.

Then, the inner leads 2 and 2'for electric signals are superposed so that the circuit forming surfaces 1a and 1'a of the two semiconductor elements 1 and 1'are arranged so as to face each other.
The insulating members 8 and 8'are adhered to each other with the adhesive 9, and the second insulating member 8 is interposed between the electric signal inner leads 2 and 2 '.

Thereafter, the electric signal inner leads are joined together at the laminated portion 2a by soldering, laser welding, resistance welding or the like.

One end of one of the inner leads 2 ′ for electric signals is cut inside the resin encapsulation body 6 and then these are encapsulated with the resin 5. One end of the other electric signal inner lead 2 is outside the resin encapsulation body 6 and the electric signal outer lead 7 is provided.
And is molded into a predetermined shape.

Also in this embodiment, it is possible to prevent a short circuit between the fine metal wires by the insulating member interposed between the inner leads 2, 2'for electric signals.

The embodiment shown in FIG. 12 shows an example in which the inner leads 2 and 2'for electric signals are partially provided with thin portions and the second insulating members 8 and 8'are respectively bonded to the thin portions. However, as shown in FIG. 14, the insulating members 8 and 8 ′ may be adhered to the electric signal inner leads 2 and 2 ′, respectively, without providing the thin portions on the electric signal inner leads 2 and 2 ′.

In the embodiment shown in FIG. 14, the electric signal inner leads 2, 2'are joined together by solder or a conductive adhesive 9 '.

[0074]

According to the present invention, even when a plurality of highly integrated semiconductor elements are mounted in a semiconductor device, the external dimensions of the semiconductor device do not become large, and sufficient lead fixing strength can be obtained and metal By preventing short-circuiting between the thin wires, the functional deterioration or destruction of the semiconductor element is eliminated, and a highly reliable resin-sealed semiconductor device can be obtained.

[Brief description of drawings]

FIG. 1 is a cross-sectional view of a resin-encapsulated semiconductor device showing an embodiment of the present invention.

FIG. 2 is a plan view showing a shape of a second insulating member of the resin-sealed semiconductor device of the present invention shown in FIG.

3 is a partial cross-sectional view showing a method of adhering a second insulating member of the resin-sealed semiconductor device of the present invention shown in FIG. 1 to an inner lead for electric signal.

FIG. 4 is a partial cross-sectional view showing another method of adhering the second insulating member of the resin-sealed semiconductor device of the present invention shown in FIG. 1 to the inner lead for electric signal.

5 is a partial cross-sectional view showing a method of bonding the second insulating member of the resin-encapsulated semiconductor device of the present invention shown in FIG. 1 to the inner leads for electric signals and at the same time bonding the inner leads for electric signals to each other. Is.

FIG. 6 is a plan view of a resin-sealed semiconductor device according to the present invention showing another example of the shape of the second insulating member.

7 is a cross-sectional view of the resin-sealed semiconductor device shown in FIG.

FIG. 8 is a plan view of a resin-sealed semiconductor device according to the present invention, showing an example of still another shape of the second insulating member.

9 is a cross-sectional view of the resin-encapsulated semiconductor device shown in FIG. 8 taken along the line of FIG.

FIG. 10 is a plan view of a resin-sealed semiconductor device according to the present invention showing still another example of the shape of the second insulating member.

FIG. 11 is a view of the resin-sealed semiconductor device shown in FIG.
FIG.

FIG. 12 is a sectional view of a resin-encapsulated semiconductor device showing another embodiment of the present invention.

13 is a partial cross-sectional view showing a method of adhering the second insulating member of the resin-sealed semiconductor device of the present invention shown in FIG. 12 to an inner lead for electric signal.

14 is a second view of the resin-sealed semiconductor device shown in FIG.
It is a fragmentary sectional view showing other methods of pasting up an insulating member to an inner lead for electric signals.

FIG. 15 is a cross-sectional view showing an example of a conventional resin-encapsulated semiconductor device in which two semiconductor elements having a lead-on-chip structure are laminated.

[Explanation of symbols]

1, 1 '... semiconductor element, 1a, 1a' ... circuit forming surface,
2, 2 '... inner lead for electric signal, 2a ... laminated part,
3, 3 '... Insulating member 4, 4' ... Thin metal wire, 5 ... Resin,
6 ... Resin sealing body, 7 ... Outer lead for electric signal, 8,
8 '... 2nd insulating member, 9, 9' ... Adhesive.

 ─────────────────────────────────────────────────── ─── Continuation of the front page (72) Inventor Ryuji Kono 502 Jinmachi-cho, Tsuchiura-shi, Ibaraki Pref.

Claims (8)

[Claims] 1. A semiconductor element is arranged such that the circuit forming surfaces of at least two semiconductor elements face each other, and a first insulating member is bonded to the circuit forming surface of each semiconductor element. An electrical signal lead is disposed on the above, the electrical signal lead and the semiconductor element are electrically connected to each other, the electrical signal leads are joined to each other, and the periphery thereof is sealed with resin. In a resin-encapsulated semiconductor device in which a resin encapsulant is formed by means of a resin-encapsulated semiconductor device, a second insulating member other than encapsulating resin is interposed between the facing surfaces of the electrical signal leads. apparatus. 2. The resin-encapsulated semiconductor device according to claim 1, wherein the second insulating member is bonded to the electrical signal lead. 3. The second insulating member is bonded to the electrical signal lead with a conductive adhesive.
The resin-encapsulated semiconductor device described. 4. A semiconductor element is arranged such that the circuit forming surfaces of at least two semiconductor elements face each other, and a first insulating member is adhered to the circuit forming surface of each semiconductor element. An electric signal lead is disposed on the above, the electric signal lead and the semiconductor element are electrically connected to each other by a thin metal wire, the electric signal leads are joined to each other, and the periphery thereof is made of resin. In a resin-encapsulated semiconductor device in which a resin encapsulant is formed by encapsulating, a second member other than the encapsulating resin, which is a member that insulates the metal thin wires on the sides of the semiconductor elements facing each other
A resin-encapsulated semiconductor device, comprising: 5. A semiconductor element is arranged such that the circuit forming surfaces of at least two semiconductor elements face each other, and a first insulating member is adhered to the circuit forming surface of each semiconductor element. An electric signal lead is disposed on the above, the electric signal lead and the semiconductor element are electrically connected to each other by a thin metal wire, the electric signal leads are joined to each other, and the periphery thereof is made of resin. In a resin-encapsulated semiconductor device in which a resin encapsulant is formed by encapsulation, a second insulating member other than the encapsulating resin is interposed in the region where the thin metal wires are arranged between the electrical signal leads. A resin-encapsulated semiconductor device characterized by the above. 6. A semiconductor element is arranged such that the circuit forming surfaces of at least two semiconductor elements face each other, and a first insulating member is adhered to the circuit forming surface of each semiconductor element. An electric signal lead is disposed on the above, the electric signal lead and the semiconductor element are electrically connected to each other by a thin metal wire, the electric signal leads are joined to each other, and the periphery thereof is made of resin. In a resin-encapsulated semiconductor device in which a resin encapsulant is formed by encapsulation, encapsulation is performed around a region where a thin metal wire is provided between the electrical signal leads and a joint between the electrical signal leads. A resin-encapsulated semiconductor device, wherein a second insulating member other than resin is interposed. 7. A semiconductor element is arranged such that the circuit forming surfaces of at least two semiconductor elements face each other, and a first insulating member is bonded to the circuit forming surface of each semiconductor element, and the first insulating member is provided. An electric signal lead is disposed on the above, the electric signal lead and the semiconductor element are electrically connected to each other by a thin metal wire, the electric signal leads are joined to each other, and the periphery thereof is made of resin. In a resin-encapsulated semiconductor device in which a resin encapsulation body is formed by encapsulation, a plurality of second insulating members other than encapsulation resin are interposed between the electrical signal leads. Static semiconductor device. 8. A first insulating member is adhered to a circuit forming surface of a semiconductor element, an electric signal lead is disposed on the first insulating member, and the electric signal lead and the semiconductor element are connected to each other. Each of them is electrically connected by a thin metal wire, and at least two semiconductor elements in which the second insulating member is adhered on the electrical signal leads are laminated so that the circuit forming surfaces of the semiconductor elements face each other, A resin-encapsulated semiconductor device, characterized in that the periphery thereof is encapsulated with a resin to form a resin encapsulant.