JPH1041455A - Semiconductor device, module structure and manufacture thereof - Google Patents

Abstract

PROBLEM TO BE SOLVED: To enable a plurality of semiconductor devices with leads of the same shape to be superimposed on each other in the form of a multistage. SOLUTION: In the case wherein this device 1 has two leads 5 connected electrically with an external terminal 2A of a semiconductor chip 2, and each lead 5 is present on the outside of one of both the opposite side surfaces of the semiconductor chip 2, each lead 5 is constituted to have a first portion 3 extended nearly in parallel with the principal surface of the semiconductor chip 2 and a second portion 4 extended in an acute angle with respect to the first portion 3.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor device, a module structure, and a method of manufacturing the same.
The present invention relates to a semiconductor device having leads electrically connected to external terminals of the semiconductor chip, a module structure having a multilayer structure in which a plurality of the devices are stacked in multiple stages, and a technique effective when applied to a method of manufacturing the same.

[0002]

2. Description of the Related Art As a semiconductor device, for example, Nikkei Micro Device (February 1991, No. 6
As described in page 5), TCP (T ape C arri
The semiconductor device of er P ackage) structure has been developed. The semiconductor device having the TCP structure has a structure in which leads are arranged outside each of two opposing side surfaces of a semiconductor chip. The lead has an end portion extending outward from the semiconductor chip, an intermediate portion extending downward from the one end portion, and another end extending outward from the intermediate portion. And one end of the lead is electrically connected to an external terminal of the semiconductor chip.

On the other hand, as a module structure having a stacked structure in which a plurality of semiconductor devices are stacked in multiple stages, for example, Nikkei B
Nikkei Microdevices (1989 November, page 15) of P, published as described, TCP (T ap
e C arrier P ackage) plurality stacked module structure of a semiconductor device in multiple stages of structures have been developed. In this module structure, many types of semiconductor devices having different lead lengths according to the height of the layer to be stacked are prepared, and the semiconductor devices are stacked in multiple stages in ascending lead length. In addition, the module structure is configured such that the semiconductor device is multi-tiered by bonding or welding the other end of the lead of the upper semiconductor device to the other end of the lead of the lower semiconductor device by soldering or welding. Laminated.

[0004]

The lead of the semiconductor device has one end portion extending from the semiconductor chip toward the outside, an intermediate portion extending downward from the one end portion, And the other end extending from the intermediate portion to the outside. For this reason, even if semiconductor devices having the same lead shape are stacked in multiple stages, the other end portion of the lead of the upper semiconductor device is brought into contact with the other end portion of the lead of the lower semiconductor device. Can not do. That is, the semiconductor devices having the same lead shape cannot be stacked in multiple stages.

On the other hand, in the module structure,
Semiconductor devices having different lead lengths, that is, semiconductor devices having different lead shapes are stacked in multiple stages. in this case,
The other end of the lead of the upper semiconductor device can be brought into contact with the other end of the lead of the lower semiconductor device. Since a large number of types must be prepared, the production rationality of the module structure is reduced.

Further, in the module structure, the leads of the respective semiconductor devices are superposed in multiple stages, so that the planar size of the module structure increases according to the number of stages in which the semiconductor devices are stacked.

An object of the present invention is to provide a technique capable of stacking semiconductor devices having the same lead shape in multiple stages.

Another object of the present invention is to provide a technique capable of improving the production rationality of a module structure.

Another object of the present invention is to provide a technique capable of reducing the planar size of a module structure.

The above and other objects and novel features of the present invention will become apparent from the description of the present specification and the accompanying drawings.

[0011]

SUMMARY OF THE INVENTION Among the inventions disclosed in the present application, the outline of a representative one will be briefly described.
It is as follows.

(1) A semiconductor device having a lead electrically connected to an external terminal of the semiconductor chip outside each of two opposing side surfaces of the semiconductor chip, wherein the lead is connected to the semiconductor chip. And a second portion extending at an acute angle to the first portion.

(2) A fitting portion for fitting a leading end of a lead of another semiconductor device to the first portion of the lead according to the means (1) is formed.

(3) A module having a multilayer structure in which a plurality of semiconductor devices having leads electrically connected to external terminals of the semiconductor chip are provided outside each of two opposing side surfaces of the semiconductor chip. A structure, wherein a lead of a predetermined semiconductor device of the plurality of semiconductor devices is formed into a first portion extending substantially parallel to a main surface of a semiconductor chip of the device, and a first shape. And a second portion formed of the plurality of semiconductor devices.
A first portion extending substantially parallel to a main surface of a semiconductor chip of the other device;
A second portion extending at an acute angle to the portion, and a tip of the second portion of the lead of the another semiconductor device is connected to the first portion of the lead of the semiconductor device located at the upper or lower stage.
Electrically and mechanically connected to the part.

(4) A method of manufacturing a module structure having a stacked structure in which a plurality of semiconductor devices are stacked in multiple stages, wherein a semiconductor chip has a main surface provided outside each of two opposing side surfaces of the semiconductor chip. A lead comprising a first portion extending substantially parallel to the first portion and a second portion formed into a predetermined shape, wherein the first portion is electrically connected to an external terminal of the semiconductor chip. Forming a semiconductor device, a first portion extending substantially parallel to a main surface of the semiconductor chip outside each of two opposing side surfaces of the semiconductor chip, and an acute angle with respect to the first portion. Forming a second semiconductor device having a lead made up of a second portion extending at an angle, and connecting the lead and an external terminal of the semiconductor chip electrically; and forming the first semiconductor device. No Electrically and mechanically connecting the tip of the second portion of the lead of the second semiconductor device to the first portion of the lead, and relatively stacking each of the first semiconductor device and the second semiconductor device. Is provided.

According to the above-mentioned means (1), when a plurality of semiconductor devices are stacked in multiple stages, the first portion of the lead of the semiconductor device located at the lower stage and the second portion of the lead of the semiconductor device located at the upper stage Can be contacted, so that semiconductor devices having the same lead shape can be stacked in multiple stages.

According to the above means (2), when a plurality of semiconductor devices 1 are stacked in multiple stages, the tips of the leads of the upper semiconductor device are inserted into the fitting portions of the leads of the lower semiconductor device. Since both can be electrically and mechanically connected by being fitted, the semiconductor device can be easily multistaged.

According to the above-mentioned means (3), since the leads of each semiconductor device are not overlapped in multiple stages, the planar size of the module structure can be reduced.

According to the means (4), a plurality of semiconductor devices can be stacked in multiple stages only by preparing two types of semiconductor devices. Therefore, multiple types of semiconductor devices are prepared according to the number of stages to be stacked. There is no need to increase the production rationality of the module structure.

[0020]

Embodiments of the present invention will be described below in detail with reference to the drawings.

In all the drawings for describing the embodiments of the present invention, components having the same functions are denoted by the same reference numerals, and their repeated description will be omitted.

Embodiment 1 FIG. 1 is a sectional view of a module structure in which a plurality of semiconductor devices according to Embodiment 1 of the present invention are stacked in multiple stages.

As shown in FIG. 1, the module structure
It has a stacked structure in which four semiconductor devices 1 are stacked in multiple stages. Each of the four semiconductor devices 1 has a structure in which leads 5 are arranged outside each of two opposing side surfaces of the semiconductor chip 2.

Although not shown in detail, the semiconductor chip 2 has a structure mainly composed of a semiconductor substrate made of, for example, single crystal silicon and a wiring layer formed on the main surface of the semiconductor substrate. The shape is a square shape.

The semiconductor chip 2 includes, for example, a DRA
M (D ynamic R andom A ccess M emory), SRAM (S t
atic RAM ).
Although not shown in detail, a plurality of external terminals 2A are arranged on the main surface (circuit formation surface) of the semiconductor chip 2. Each of the plurality of external terminals 2A is a semiconductor chip 2
Is electrically connected to the storage circuit system mounted on the server.

The lead 5 comprises a portion 3 extending substantially parallel to the main surface of the semiconductor chip 2 and a portion 4 extending at an acute angle to the portion 3. The lead 5 is formed by bending a predetermined portion of the lead 5 and bending the portion 4 at an acute angle to the portion 3.

The part 3 of the lead 5 is a semiconductor chip 2
Is fixed to the main surface with an insulating film 6 interposed therebetween. That is, the semiconductor device 1 of the present embodiment has a LOC structure in which the portion 3 of the lead 5 is arranged on the main surface of the semiconductor chip 2 with the insulating film 6 interposed. Insulating film 6
Is formed of, for example, a polyimide resin. Adhesive layers are formed on both surfaces of the insulating film 6.

The portion 3 of the lead 5 is electrically connected via a bonding wire 7 to an external terminal 2A arranged on the main surface of the semiconductor chip 2. The bonding wire 7 is formed of, for example, a gold (Au) wire, an aluminum (Al) wire, or a covered wire in which the surface of a metal wire is covered with an insulating film.

The semiconductor chip 2, a part of the portion 3 of the lead 5, the insulating film 6, the bonding wires 7 and the like are sealed with a sealing body 8. Although not limited to this, the sealing body 8 is formed of, for example, an epoxy resin to which a phenol-based curing agent, silicone rubber, and a filler are added.

In the four semiconductor devices 1, the portion 4 of the lead 5 of the semiconductor device 1 located at the fourth stage is in contact with the portion 3 of the lead 5 of the semiconductor device 1 located at the third stage. The lead 5 of the semiconductor device 1 located at the third stage
Is a lead 5 of the semiconductor device 1 located at the second stage.
Portion 3 is in contact. Further, the portion 4 of the lead 5 of the semiconductor device 1 located at the second stage is in contact with the portion 3 of the lead 5 of the semiconductor device located at the first stage. That is, the lead 5 of the semiconductor device 1 is composed of the portion 3 extending substantially parallel to the main surface of the semiconductor chip 2 and the portion 4 extending at an acute angle to the portion 3. As a result, the portion 3 of the lead 5 of the semiconductor device 1 located at the lower stage
In addition, since the portion 4 of the lead 5 of the semiconductor device 1 located in the upper stage can be brought into contact, a plurality of semiconductor devices 1 having the same shape of the lead 5 can be stacked in multiple stages.

The semiconductor device 1 according to the present embodiment includes a semiconductor chip 2, a part of a portion 3 of a lead 5, an insulating film 6.
Since the bonding wires 7 and the like are sealed by the sealing body 8, the portion 3 of the lead 5 of the semiconductor device 1
In order to make the portion 4 of the lead 5 of the semiconductor device 1 located in the upper stage contact, as shown in FIG. 2 (enlarged sectional view of a main part of the semiconductor device), The distance L from the portion 3 of the lead 5 to the tip of the portion 4 of the lead 5 is configured to be large, and the portion of the lead 5 is located below the surface 8A of the sealing body 8 on the side where the portion 4 of the lead 5 extends. 4 must have a protruding tip.

As shown in FIG. 2, a fitting portion 9 is formed in the portion 3 of the lead 5 of the semiconductor device 1. As shown in FIG. 1, the tip 10 of the portion 4 of the lead 5 of the semiconductor device 1 located at the upper stage is fitted into the fitting portion 9 of the lead 5 and is electrically and mechanically connected. That is, the fitting portion 9 for fitting the tip portion 10 of the lead 5 of another semiconductor device 1 is formed in the portion 3 of the lead 5 of the semiconductor device 1. in this way,
The other semiconductor device 1 is connected to the portion 3 of the lead 5 of the semiconductor device 1.
Fitting part 9 for fitting the tip part 10 of the lead 5 of FIG.
When the plurality of semiconductor devices 1 are stacked in multiple stages, the tip 10 of the lead 5 of the upper semiconductor device 1 is fitted into the fitting portion 9 of the lead 5 of the lower semiconductor device 1. In this way, both can be electrically and mechanically connected.
Can be easily performed in multiple stages.

In the semiconductor device 1, the fitting portion 9 of the lead 5 and the tip portion 10 of the portion 4 are located on substantially the same straight line.

Although the fitting portion 9 of the lead 5 is not limited to this, as shown in FIG.
For example, it has a hole structure. Further, the tip portion 10 of the portion 4 of the lead 5 is not limited to this, but has a tapered structure, for example, as shown in FIG. As described above, when the fitting portion 9 of the lead 5 is formed in a hole structure and the tip portion 10 of the lead 5 is formed in a tapered structure, when a plurality of semiconductor devices 1 are stacked in multiple stages, the semiconductor device 1 located in a lower stage is stacked. The leading end 10 of the lead 5 of the semiconductor device 1 located at the upper stage is inserted into the fitting portion 9 of the lead 5, and the two can be easily fitted and fixed by the elastic force of the lead 5. Can be easily performed.

A step 10 is provided at the tip 10 of the lead 5.
A is configured. The step portion 10A defines the insertion amount when the tip 10 of the lead 5 of the upper semiconductor device 1 is inserted into the fitting portion 9 of the lead 5 of the lower semiconductor device 1, and the lower semiconductor device 1 For the purpose of positioning the upper semiconductor device 1 with respect to. In this manner, the step 10 is attached to the tip 10 of the lead 5.
By configuring A, when a plurality of semiconductor devices 1 are stacked in multiple stages, the upper semiconductor device 1 can be positioned with respect to the lower semiconductor device 1, so that the height of the module structure can be controlled. .

The semiconductor device 1 is manufactured by a manufacturing process using a lead frame 20 shown in FIG. 4 (plan view).

The lead frame 20 has a plurality of leads 5 arranged in an area defined by the frame 20A.
Each of the plurality of leads 5 is integrated with the frame 20A,
They are connected to each other via a tie bar 20B. An insulating film 6 is attached to one end of each of the leads 5.

The lead frame 20 is made of, for example, iron
(Fe) -nickel (Ni) alloy (for example, Ni content 42
[%] Or 50 [%]), an etching process or a punching process is performed on a frame material made of copper (Cu) or a copper-based alloy to form a lead 5, a tie bar 20B, and the like. It is formed by attaching a film 6.

The lead 5 of the lead frame 20 is composed of a portion 3 and a portion 4 as shown in FIG. The part 3 is fixed to the main surface of the semiconductor chip 2 with the insulating film 6 interposed therebetween in the manufacturing process of the semiconductor device 1, and is arranged substantially parallel to the main surface of the semiconductor chip 2. The part 4 is bent at an acute angle to the part 3 in the manufacturing process of the semiconductor device 1. Note that, in the figure, the dotted line indicates the bending position of the lead 5.

Next, a manufacturing process of the semiconductor device 1 will be described.

First, the lead frame 20 shown in FIG. 4 is prepared.

Next, the lead frame 20 is fixed to the semiconductor chip 2. The lead frame 20 is fixed by connecting the lead 5 with the insulating film 6 interposed on the main surface of the semiconductor chip 2.
This is performed by fixing the part 3 of FIG.

Next, the external terminals 2A of the semiconductor chip 2
And the portion 3 of the lead 5 of the lead frame 20 is electrically connected by a bonding wire 7.

Next, the semiconductor chip 2, a part of the portion 3 of the lead 5, the insulating film 6, the bonding wires 7 and the like are sealed with a sealing body 8. The sealing body 7 is formed by, for example, a transfer molding method.

Next, the frame 20 of the lead frame 20 will be described.
The lead 5 is cut from A, and the tie bar 20B is cut from the lead 5.

Next, a predetermined portion of the lead 5 is bent, and the portion 4 of the lead 5 is bent at an acute angle to the portion 3 of the lead 5, thereby completing the semiconductor device 1. Thereafter, by stacking a plurality of semiconductor devices 1 in multiple stages, the module structure shown in FIG. 1 is completed.

As described above, according to the present embodiment, the following effects can be obtained.

(1) Two semiconductor chips 2 facing each other
A semiconductor device 1 having a lead 5 electrically connected to an external terminal 2A of the semiconductor chip 2 on the outside of each of the three side surfaces. A part 3 extending in parallel and this part 3
When the plurality of semiconductor devices 1 are stacked in multiple stages, the portions 3 of the leads 5 of the semiconductor device 1 located at the lower stage
In addition, since the portion 4 of the lead 5 of the semiconductor device 1 located in the upper stage can be brought into contact, a plurality of semiconductor devices 1 having the same shape of the lead 5 can be stacked in multiple stages.

(2) A plurality of semiconductor devices 1 are stacked in multiple stages by forming a fitting portion 9 for fitting the tip portion 10 of the lead 5 of another semiconductor device 1 into the portion 3 of the lead 5. The semiconductor device 1 located in the upper stage is fitted into the fitting portion 9 of the lead 5 of the semiconductor device 1 located in the lower stage.
By fitting the leading end portion 10 of the lead 5 into an electrical and mechanical connection, the semiconductor device can be easily multi-staged.

(3) By forming the fitting portion 9 of the lead 5 in a hole structure and forming the tip portion 10 of the lead 5 in a tapered structure, when a plurality of semiconductor devices 1 are stacked in multiple stages, the semiconductor device located in the lower stage The distal end portion 10 of the lead 5 of the semiconductor device 1 located at the upper stage is inserted into the fitting portion 9 of the lead 5 of the device 1, and both can be easily fitted and fixed by the elastic force of the lead 5.
Can be easily performed in multiple stages.

(4) A step 10 is formed at the tip 10 of the lead 5.
By configuring A, when a plurality of semiconductor devices 1 are stacked in multiple stages, the upper semiconductor device 1 can be positioned with respect to the lower semiconductor device 1, so that the height of the module structure can be controlled. .

The semiconductor device 1 according to the present embodiment includes a semiconductor chip 2, a part of a portion 3 of a lead 5, an insulating film 6.
Although the configuration is such that the bonding wire 7 and the like are sealed with a sealing body 8, the portion 3 of the lead 5 is fixed to the main surface of the semiconductor chip 2 with the insulating film 6 interposed therebetween. It is not necessary to make the structure sealed with the stopper 8.
However, the connection between the external terminal 2A of the semiconductor chip 2 and the portion 3 of the lead 5 must be sealed with a potting resin or the like. In this case, the manufacturing cost of the semiconductor device 1 can be reduced.

The semiconductor device 1 according to the present embodiment has a LOC
Have been constructed in a structure, the back surface of the semiconductor chip 2 by interposing an insulating film 6 for fixing the portion 3 of the leads 5, to mount a so-called COL (C hip O n L ead ) structure and the semiconductor chip 2 parts May be fixed to the back surface of the semiconductor chip 2 with an Ag paste or the like, and the semiconductor device 1 may have a structure that is not integrated with the portion 3 of the lead 5.

As shown in FIG. 6 (an enlarged perspective view of a main part), the fitting portion 9 of the lead 5 has a notch 9A, and the tip 10 of the lead 5 has a notch 10B. It may be configured with a different structure. The direction of the notch 9A is opposite to the direction of the notch 10B.

FIG. 7 (a plan view of a main part of a lead frame).
As shown in (1), the semiconductor device 1 may be configured to have a structure in which every other lead 5 having a different direction of the notch 9A and the notch 10B is mixed. In this case, when the notch 10B of the tip 10 of the lead 5 located at the upper stage is fitted into the notch 9A of the lead 5 of the semiconductor device 1 located at the lower stage, the notch is provided in a certain direction. Both sides are hard to come off.

Although not shown, the bent portion and the cut portion of the lead 5 may be subjected to half etching. In this case, the bending process of the portion 4 of the lead 5 becomes easy. In addition, the lead 5
The cutting process is easy.

When the semiconductor devices 1 are stacked in multiple stages, the leads 5 of the lower semiconductor device 1 and the leads 5 of the upper semiconductor device 1 may be bonded and fixed with a conductive adhesive. . In this case, the electrical reliability of the module structure can be improved.

(Embodiment 2) FIG. 8 is a sectional view of a module structure according to Embodiment 2 of the present invention.

As shown in FIG. 8, the module structure is
It has a stacked structure in which four semiconductor devices 1 are stacked in multiple stages. Each of the four semiconductor devices 1 has a structure in which leads 5 are arranged outside each of two opposing side surfaces of the semiconductor chip 2.

Of the four semiconductor devices 1, the leads 5 of the semiconductor device 1 A located at the fourth stage are connected to the semiconductor chip 2.
And a portion 4A formed substantially in a predetermined shape. The portion 3A of the lead 5 is fixed to the main surface of the semiconductor chip 2 with an insulating film 6 interposed. The portion 3A of the lead 5 is electrically connected to the external terminal 2A of the semiconductor chip 2 via the bonding wire 7.

Of the four semiconductor devices, the third and second stages
The lead 5 of the semiconductor device 1B located at the first stage and the first stage
Is composed of a portion 3B extending substantially parallel to the main surface of the semiconductor chip 2 and a portion 4B extending at an acute angle to the portion 3B. The portion 3B of the lead 5 is fixed to the main surface of the semiconductor chip 2 with an insulating film 6 interposed. Also, the portion 3B of the lead 5 is
It is electrically connected to the external terminal 2A of the semiconductor chip 2 via the bonding wire 7.

The portion 4B of the lead 5 of the semiconductor device 1B located at the first stage is the semiconductor device 1B located at the second stage.
Is in contact with the portion 3B of the lead 5 of FIG. Further, the portion 4B of the lead 5 of the semiconductor device 1B located at the second stage is in contact with the portion 3B of the lead 5 of the semiconductor device 1B located at the third stage. Further, the portion 4B of the lead 5 of the semiconductor device 1B located at the third stage is different from the semiconductor device 1 located at the fourth stage.
A is in contact with the portion 3A of the lead 5 of A.

In the semiconductor device 1 A, the semiconductor chip 2, the portion 3 A of the lead 5, the insulating film 6, the bonding wires 7 and the like are sealed with a sealing body 8. The portion 4A of the lead 5 is drawn out of the sealing body 8 and formed into a predetermined shape. In the three semiconductor devices 1B, the semiconductor chip 2, the leads 5, the insulating film 6, the bonding wires 7, and the like are sealed with the above-described sealing body 8. That is, except for the portion 4A of the lead 5 of the semiconductor device 1A, the semiconductor device 1A and the three semiconductor devices 1B are sealed with one sealing body 8.

The leading end 10 of the portion 4B of the lead 5 of the semiconductor device 1B located at the third stage is shown in FIGS.
As shown in an enlarged cross-sectional view of a main part of the semiconductor device 1), the semiconductor device 1A is fitted into a fitting portion 9 formed on a portion 3A of the lead 5 of the semiconductor device 1A located at the fourth stage, and is electrically and mechanically connected.

The tip 10 of the portion 4B of the lead 5 of the semiconductor device 1B located at the second stage is fitted into the fitting portion 9 formed at the portion 3B of the lead 5 of the semiconductor device 1B located at the third stage. , Electrically and mechanically.

The tip 10 of the portion 4B of the lead 5 of the semiconductor device 1B located at the first stage is fitted into the fitting portion 9 formed at the portion 3B of the lead 5 of the semiconductor device 1B located at the third stage. , Electrically and mechanically.

The semiconductor device 1A located at the fourth stage is manufactured by a manufacturing process using a lead frame 21 shown in FIG. 10 (plan view). The lead frame 21 is
A plurality of leads 5 are arranged in the area defined by A. Each of the plurality of leads 5 is integrated with the frame 21A and is connected to each other via the tie bar 21B. An insulating film 6 is attached to one end of each of the leads 5.

The lead frame 21 is made of, for example, iron
After a frame material made of (Fe) -nickel (Ni) alloy, copper (Cu) or a copper-based alloy is subjected to etching or punching to form a lead 5, a tie bar 21B, and the like, insulation is provided at one end of the lead 5. It is formed by attaching a film 6.

The lead 5 of the lead frame 20 is composed of a portion 3A and a portion 4A. The part 3A is a part of the semiconductor chip 2 in the manufacturing process of the semiconductor device 1A.
Is fixed to the main surface of the semiconductor chip 2 with an insulating film 6 interposed therebetween, and is arranged substantially parallel to the main surface of the semiconductor chip 2. Part 4A
Is formed into a predetermined shape in the manufacturing process of the semiconductor device 1.

Note that a fitting portion 9 for fitting the tip portion 10 of the lead 5 of the semiconductor device 1B is formed in the portion 3A of the lead 5.

The semiconductor device 1B located at the third, second, and first stages is a lead frame 2 shown in FIG.
2 is manufactured in a manufacturing process. The lead frame 22 has a plurality of leads 5 arranged in an area defined by the frame 22A. Each of the plurality of leads 5 is integrated with the frame 22A and is connected to each other via the connection bar 22B. An insulating film 6 is attached to one end of each of the leads 5.

The lead frame 22 is made of, for example, iron
A frame material made of (Fe) -nickel (Ni) alloy, copper (Cu), or a copper-based alloy is subjected to etching or punching to form leads 5, connecting bars 22B, and the like. It is formed by attaching an insulating film 6.

The lead 5 of the lead frame 22 is composed of a portion 3B and a portion 4B. The portion 3B is a part of the semiconductor chip 2
Is fixed to the main surface of the semiconductor chip 2 with an insulating film 6 interposed therebetween, and is arranged substantially parallel to the main surface of the semiconductor chip 2. Part 4B
Is the part 3B in the manufacturing process of the semiconductor device 1B.
Is bent at an acute angle with respect to.

Note that a fitting portion 9 for fitting the tip portion 10 of the lead 5 of another semiconductor device 1B is formed in the portion 3B of the lead 5.

Next, a method for manufacturing the module structure will be described with reference to FIGS. 12 to 14 (cross-sectional views for explaining the manufacturing method).

First, a semiconductor device 1B shown in FIG. 12 and a semiconductor device 1A shown in FIG. 13 are prepared. Semiconductor device 1B
4B of the lead 5 is bent at an acute angle to the portion 3B. Although not shown in detail, the leads 5 of the semiconductor device 1A
Of the frame 21A.

Next, the tip 10 of the portion 4B of the lead 5 of the semiconductor device 1B is fitted into the fitting portion 9 of the portion 3A of the lead 5 of the semiconductor device 1A.
A, each of the first semiconductors 1B is relatively stacked.
In this step, the leads 5 of the semiconductor device 1A can be electrically and mechanically connected without overlapping the leads 5 of the semiconductor device 1B.

Next, the tip 10 of the portion 4B of the lead 5 of the second semiconductor device 1B is fitted into the fitting portion 9 of the portion 3B of the lead 5 of the first semiconductor device 1B, Each of the second semiconductor devices 1B is relatively stacked. In this step, the leads 5 of the second semiconductor device 1B can be electrically and mechanically connected without overlapping the leads 5 of the first semiconductor device 1B.

Next, the tip 10 of the portion 4B of the lead 5 of the third semiconductor device 1B is fitted into the fitting portion 9 of the portion 3B of the lead 5 of the second semiconductor device 1B.
The third semiconductor device 1B and the third semiconductor device 1B are relatively stacked. In this step, the leads 5 of the third semiconductor device 1B can be electrically and mechanically connected without overlapping the leads 5 of the third semiconductor device 1B. Thus, as shown in FIG. 14, each of the four semiconductor devices 1 is relatively stacked.

Next, each of the four semiconductor devices 1 is
It seals with one sealing body 8. In this step, the portion 4A of the lead 5 of the semiconductor device 1A is not sealed with the sealing body 8.

Next, the frame 22 of the lead frame 22
8A is completed by cutting the lead 5 of the semiconductor device 1A from A and then molding the portion 4A of the lead 5 of the semiconductor device 1A into a predetermined shape.

As described above, according to the present embodiment, the following effects can be obtained.

(1) Two semiconductor chips 2 facing each other
A module structure having a stacked structure in which a plurality of semiconductor devices 1 each having a lead 5 electrically connected to an external terminal 2 </ b> A of the semiconductor chip 2 on the outer side of each of the side surfaces are stacked in multiple stages. Of the semiconductor device 1 described above, the lead 5 of the predetermined semiconductor device 1A is divided into a portion 3A extending substantially parallel to the main surface of the semiconductor chip 2 of the device and a portion 4A formed into a predetermined shape. The lead 5 of another semiconductor device 1B among the plurality of semiconductor devices 1
And a portion 4B extending substantially parallel to the main surface of the semiconductor chip 2 of the device and a portion 4B extending at an acute angle to the portion 3B. By electrically and mechanically connecting the tip 10 of the portion 4B of the lead 5 of the semiconductor device 1B to the portion 3A of the lead 5 of the semiconductor device 1A located at the upper stage, the lead 5 of each semiconductor device 1 is superposed in multiple stages. Since this is not done, the planar size of the module structure can be reduced.

(2) A method of manufacturing a module structure having a laminated structure in which a plurality of semiconductor devices 1 are stacked in multiple stages, wherein the semiconductor chip 2 is provided outside each of two opposing side surfaces of the semiconductor chip 2. Of the semiconductor chip 2 and the external terminals 2A of the semiconductor chip 2 are electrically connected to each other. A semiconductor device 1A connected to the semiconductor chip 2 and a portion 3B extending substantially parallel to the main surface of the semiconductor chip 2 outside each of two opposing side surfaces of the semiconductor chip 2; Portion 4B extending at an acute angle to 3B
Preparing a semiconductor device 1B in which the lead 5 and the external terminal 2A of the semiconductor chip 2 are electrically connected; and a step 3A of the lead 5 of the semiconductor device 1A By electrically and mechanically connecting the tip portions 10 of the portions 4B of the leads 5 of the semiconductor device 1B and relatively stacking the semiconductor device 1A and the semiconductor device 1B, two types of semiconductors are provided. By simply preparing the devices, a plurality of semiconductor devices 1 can be stacked in multiple stages, so that it is not necessary to prepare many types of semiconductor devices 1 according to the number of layers to be stacked, and it is possible to improve the production rationality of the module structure. it can.

In the manufacturing process of the module structure, when the semiconductor device 1A and the first semiconductor device 1B are relatively stacked, the leads 5 of the semiconductor device 1A are stacked.
The leads 5 of the first semiconductor device 1B may be fixed with a conductive adhesive. Similarly, the first semiconductor device 1
B, when the second semiconductor device 1B is relatively stacked and when the second semiconductor device 1B and the third semiconductor device 1B are relatively stacked, the lead 5 and the lead 5 are electrically connected. It may be fixed with an adhesive material. In this case, the electrical reliability of the module structure can be improved.

As described above, the invention made by the present inventor is:
Although specifically described based on the embodiment, the present invention
It is needless to say that the present invention is not limited to the above-described embodiment, but can be variously modified without departing from the scope of the invention.

[0087]

The effects obtained by the representative ones of the inventions disclosed in the present application will be briefly described as follows.

A plurality of semiconductor devices having the same lead shape can be stacked in multiple stages.

The production rationality of the module structure can be improved.

The planar size of the module structure can be reduced.

[Brief description of the drawings]

FIG. 1 is a cross-sectional view of a module structure having a stacked structure in which a plurality of semiconductor devices according to a first embodiment of the present invention are stacked in multiple stages.

FIG. 2 is an enlarged sectional view of a main part of the semiconductor device.

FIG. 3 is an enlarged perspective view of a main part of a lead of the semiconductor device.

FIG. 4 is a plan view of a lead frame used in a manufacturing process of the semiconductor device.

FIG. 5 is an enlarged plan view of a main part of the lead frame.

FIG. 6 is a perspective view of a main part of a lead of a semiconductor device according to a modification of the first embodiment of the present invention;

FIG. 7 is a main part plan view of a lead frame used in a semiconductor device manufacturing process which is a modification of the first embodiment of the present invention;

FIG. 8 is a sectional view of a module structure according to a second embodiment of the present invention.

9 is an enlarged sectional view of a main part of FIG. 8;

FIG. 10 is a plan view of a lead frame used in a manufacturing process of a semiconductor device constituting the module structure.

FIG. 11 is a plan view of a lead frame used in a manufacturing process of a semiconductor device constituting the module structure.

FIG. 12 is a cross-sectional view for explaining the method for manufacturing the module structure.

FIG. 13 is a cross-sectional view for explaining the method for manufacturing the module structure.

FIG. 14 is a cross-sectional view for explaining the method for manufacturing the module structure.

[Description of Signs] 1 ... Semiconductor device, 2 ... Semiconductor chip, 5 ... Lead, 6 ...
Insulating film, 7: bonding wire, 8: sealing body,
9: fitting portion, 10: tip portion, 20, 21, 22, ... lead frame.

 ──────────────────────────────────────────────────の Continuing on the front page (72) Inventor Tomoaki Nose 2326 Imai, Ome-shi, Tokyo Inside the Device Development Center, Hitachi, Ltd. Inside the center (72) Inventor Mutsuo Tsukita 145 Nakajima, Nanae-cho, Kameda-gun, Hokkaido Inside Hitachi Hokkai Semiconductor Co., Ltd.

Claims (12)

[Claims] 1. A semiconductor device having a lead electrically connected to an external terminal of the semiconductor chip outside each of two opposing side surfaces of the semiconductor chip, wherein the lead is provided on the semiconductor chip. A semiconductor device comprising: a first portion extending substantially parallel to a main surface; and a second portion extending at an acute angle to the first portion. 2. The semiconductor device according to claim 1, wherein a fitting portion for fitting a tip portion of a lead of another semiconductor device is formed in the first portion of the lead. 3. The semiconductor device according to claim 2, wherein the fitting portion of the lead and the tip of the second portion are located on substantially the same straight line. 4. The semiconductor device according to claim 1, wherein the first portion of the lead is fixed to a main surface or a back surface of the semiconductor chip via an insulating film. 3. The semiconductor device according to claim 1. 5. A first part of the lead excluding a fitting part of the lead.
The semiconductor device according to claim 2, wherein a part of the portion and the semiconductor chip are sealed with a sealing body. 6. One of claims 1 to 5
A module structure comprising a stacked structure in which a plurality of the semiconductor devices described in the above section are stacked in multiple stages. 7. A module structure having a stacked structure in which a plurality of semiconductor devices having leads electrically connected to external terminals of the semiconductor chip are provided outside each of two opposing side surfaces of the semiconductor chip. A lead of a predetermined semiconductor device of the plurality of semiconductor devices, a first portion extending substantially parallel to a main surface of a semiconductor chip of the device, and a first portion formed into a predetermined shape; A first portion in which a lead of another semiconductor device of the plurality of semiconductor devices extends substantially parallel to a main surface of a semiconductor chip of the device; A second portion extending at an acute angle with respect to the first portion, and a tip of the second portion of the lead of the another semiconductor device is connected to a first portion of the lead of the semiconductor device located at the upper or lower stage.
A module structure electrically and mechanically connected to a part. 8. A tip portion of a second portion of the lead of the semiconductor device located at the upper or lower stage is fitted into the first portion of the lead of the predetermined semiconductor device and the first portion of the lead of the another semiconductor device. The module structure according to claim 7, wherein a fitting portion for fitting is configured. 9. The module structure according to claim 8, wherein the fitting portion and the tip of the second portion of the lead of the another semiconductor device are located on substantially the same straight line. 10. The first of the leads of the predetermined semiconductor device.
The portion is fixed to the main surface or the back surface of the semiconductor chip of the device with an insulating film interposed therebetween, and the first portion of the lead of the another semiconductor device is provided with the insulating film on the main surface or the back surface of the semiconductor chip of the device. The module structure according to any one of claims 7 to 9, wherein the module structure is interposed and fixed. 11. The semiconductor chip of the predetermined semiconductor device and the first portion of the lead thereof, and the semiconductor chip of the another semiconductor device and the lead thereof are sealed with one sealing body. The module structure according to any one of claims 7 to 10. 12. A method of manufacturing a module structure having a laminated structure in which a plurality of semiconductor devices are stacked in multiple stages, wherein each of two opposing side surfaces of a semiconductor chip is provided outside a main surface of the semiconductor chip. A first semiconductor having a lead consisting of a first part extending substantially parallel to the second part and a second part formed into a predetermined shape, wherein the lead is electrically connected to an external terminal of the semiconductor chip; Forming a device, a first portion extending substantially parallel to a main surface of the semiconductor chip outside each of two opposing side surfaces of the semiconductor chip, and forming an acute angle with respect to the first portion. Forming a second semiconductor device having a lead comprising a second portion extending at an angle formed by the second semiconductor device, wherein the lead is electrically connected to an external terminal of the semiconductor chip; Lead Electrically and mechanically connecting the tip of the second portion of the lead of the second semiconductor device to the first portion of the first semiconductor device, and relatively stacking each of the first semiconductor device and the second semiconductor device. A method for manufacturing a module structure, comprising: