JPH0527273B2 - - Google Patents
Info
- Publication number
- JPH0527273B2 JPH0527273B2 JP6629684A JP6629684A JPH0527273B2 JP H0527273 B2 JPH0527273 B2 JP H0527273B2 JP 6629684 A JP6629684 A JP 6629684A JP 6629684 A JP6629684 A JP 6629684A JP H0527273 B2 JPH0527273 B2 JP H0527273B2
- Authority
- JP
- Japan
- Prior art keywords
- oxide film
- drain
- gate oxide
- gate
- mos transistor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000000034 method Methods 0.000 claims description 25
- 238000004519 manufacturing process Methods 0.000 claims description 12
- 239000000758 substrate Substances 0.000 claims description 6
- 238000009826 distribution Methods 0.000 claims description 2
- 230000001678 irradiating effect Effects 0.000 claims 1
- 239000004065 semiconductor Substances 0.000 claims 1
- 238000007254 oxidation reaction Methods 0.000 description 14
- 230000031700 light absorption Effects 0.000 description 13
- 230000003647 oxidation Effects 0.000 description 13
- 230000015556 catabolic process Effects 0.000 description 12
- 230000000694 effects Effects 0.000 description 6
- 230000005684 electric field Effects 0.000 description 5
- 238000005468 ion implantation Methods 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000001459 lithography Methods 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 230000001590 oxidative effect Effects 0.000 description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 3
- 229920005591 polysilicon Polymers 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical group [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000001133 acceleration Effects 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 239000006096 absorbing agent Substances 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- -1 phosphorus ions Chemical class 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42364—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the insulating layer, e.g. thickness or uniformity
- H01L29/42368—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the insulating layer, e.g. thickness or uniformity the thickness being non-uniform
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Electrodes Of Semiconductors (AREA)
- Formation Of Insulating Films (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6629684A JPS60208863A (ja) | 1984-04-03 | 1984-04-03 | Ｍｏｓトランジスタ及びその製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6629684A JPS60208863A (ja) | 1984-04-03 | 1984-04-03 | Ｍｏｓトランジスタ及びその製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS60208863A JPS60208863A (ja) | 1985-10-21 |
| JPH0527273B2 true JPH0527273B2 (ko) | 1993-04-20 |
Family
ID=13311709
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP6629684A Granted JPS60208863A (ja) | 1984-04-03 | 1984-04-03 | Ｍｏｓトランジスタ及びその製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS60208863A (ko) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5648671A (en) * | 1995-12-13 | 1997-07-15 | U S Philips Corporation | Lateral thin-film SOI devices with linearly-graded field oxide and linear doping profile |
| DE19611045C1 (de) * | 1996-03-20 | 1997-05-22 | Siemens Ag | Durch Feldeffekt steuerbares Halbleiterbauelement |
| CN106783975A (zh) * | 2016-11-23 | 2017-05-31 | 南通沃特光电科技有限公司 | 一种n沟道增强型mos晶体管器件 |
-
1984
- 1984-04-03 JP JP6629684A patent/JPS60208863A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS60208863A (ja) | 1985-10-21 |
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