JPH05251216A - Voltage dependent non-linear resistor ceramic element - Google Patents

Voltage dependent non-linear resistor ceramic element

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Publication number
JPH05251216A
JPH05251216A JP4050307A JP5030792A JPH05251216A JP H05251216 A JPH05251216 A JP H05251216A JP 4050307 A JP4050307 A JP 4050307A JP 5030792 A JP5030792 A JP 5030792A JP H05251216 A JPH05251216 A JP H05251216A
Authority
JP
Japan
Prior art keywords
voltage
electrode
cylinder
hole
electrodes
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP4050307A
Other languages
Japanese (ja)
Inventor
Keiichi Noi
慶一 野井
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP4050307A priority Critical patent/JPH05251216A/en
Publication of JPH05251216A publication Critical patent/JPH05251216A/en
Pending legal-status Critical Current

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Abstract

PURPOSE:To stabilize the electric characteristics even if a part of solder runs into the gap between a pin and an element within the title voltage dependent non-linear resistor ceramic element having the capacitor characteristics and varistor characteristics for protecting the semiconductor and circuits of equipment from the abnormal high voltage, noise, static electricity, etc., generated from an electric equipment. CONSTITUTION:Within the title voltage dependent non-linear resistor ceramic element, a semiconductor ceramics mainly comprising SrTiO3 having the voltage dependent resistance characteristics takes the shape having a cylindrical through hole in the central part of a cylinder wherein a doughnut type electrode with outer and inner periphery respectively smaller than the outer diameter of the cylinder and equal to the diameter of the through hole while another electrode is integrally arranged on the inner periphery of the through hole on both ends of the cylinder on the other hand, the other electrodes are arranged in the central part of outer peripheral sides of the cylinder at equidistance from both ends. Through these procedures, the distance between electrodes is not to be changed even if a part of solder 7 runs into the gap between a pin 6 and an element 5 thereby enabling the electric characteristics can be stabilized.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明は電気機器や電子機器で発
生する異常高電圧、ノイズ、静電気などから機器の半導
体および回路を保護するためのコンデンサ特性とバリス
タ特性を有する電圧依存性非直線抵抗体磁器素子に関す
る。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a voltage-dependent non-linear resistance having capacitor characteristics and varistor characteristics for protecting semiconductors and circuits of equipment from abnormal high voltage, noise, static electricity, etc. generated in electric equipment and electronic equipment. Body porcelain element.

【0002】[0002]

【従来の技術】従来、各種の電気機器や電子機器におけ
る異常高電圧の吸収、ノイズの除去、火花消去、静電気
対策のために電圧依存性非直線抵抗特性を有するSiC
バリスタや、ZnO系バリスタなどが使用されている。
2. Description of the Related Art Conventionally, SiC having a voltage-dependent non-linear resistance characteristic for absorbing abnormal high voltage, eliminating noise, eliminating sparks, and preventing static electricity in various electric and electronic devices.
Varistors and ZnO-based varistor are used.

【0003】このようなバリスタの電圧−電流特性は近
似的に次式のように表すことができる。
The voltage-current characteristic of such a varistor can be approximately expressed by the following equation.

【0004】[0004]

【数1】 [Equation 1]

【0005】ここで、Iは電流、Vは電圧、Cはバリス
タ固有の定数、αは電圧−電流非直線指数である。
Here, I is a current, V is a voltage, C is a constant unique to a varistor, and α is a voltage-current nonlinear index.

【0006】SiCバリスタのαは2〜7で、ZnO系
バリスタではαが50にもおよぶものがある。このよう
なバリスタは比較的高い電圧の吸収には優れた性能を有
しているが、誘電率が低く、固有の静電容量が小さいた
めバリスタ電圧以下の比較的低い電圧の吸収にはほとん
ど効果を示さず、また誘電損失tanδが5〜10%と
大きい。
The α of SiC varistor is 2 to 7, and the α of some ZnO varistor reaches 50. Although such a varistor has excellent performance in absorbing a relatively high voltage, it has almost no effect in absorbing a relatively low voltage below the varistor voltage due to its low dielectric constant and small intrinsic capacitance. Is not shown, and the dielectric loss tan δ is as large as 5 to 10%.

【0007】一方、これらの低電圧のノイズなどの除去
には見かけの誘電率が5×104程度で、tanδが1
%前後の半導体コンデンサが利用されている。しかし、
このような半導体コンデンサはサージなどにより、ある
限度以上の電圧または電流が印加されると静電容量が減
少したり破壊したりしてコンデンサとしての機能を果た
さなくなる。
On the other hand, in removing these low-voltage noises, the apparent dielectric constant is about 5 × 10 4 , and tan δ is 1.
% Semiconductor capacitors are used. But,
When a voltage or current exceeding a certain limit is applied to such a semiconductor capacitor due to a surge or the like, the electrostatic capacity is reduced or destroyed, and the semiconductor capacitor does not function as a capacitor.

【0008】そこで最近になってSrTiO3を主成分
とし、バリスタ特性とコンデンサ特性の両方の特性を有
するものが開発され、コンピュータなどの電子機器にお
けるIC、LSIなどの半導体素子および回路の保護や
電子機器を相互につなぐケーブルやコネクタなどから侵
入するノイズの除去に利用されている。
Therefore, recently, a material containing SrTiO 3 as a main component and having both varistor characteristics and capacitor characteristics has been developed, and protection of semiconductor elements and circuits such as ICs and LSIs in electronic equipment such as computers and circuits and electronic It is used to remove noise that enters from cables and connectors that connect devices to each other.

【0009】以下にSrTiO3を主成分とするバリス
タとコンデンサの両方の特性を有する従来の電圧依存性
非抵抗体磁器素子について説明する。
A conventional voltage-dependent non-resistive porcelain element having the characteristics of both a varistor and a capacitor containing SrTiO 3 as a main component will be described below.

【0010】図3に示すように、コネクタなどから侵入
するノイズの除去に使用する電圧依存性非抵抗体磁器素
子10は、SrTiO3を主成分とした電圧依存性非直
線抵抗特性を有する半導体セラミックからなる円筒形の
素子11の上面と下面に電極12と電極13を配設した
ものである。
As shown in FIG. 3, the voltage-dependent non-resistive porcelain element 10 used for removing noise penetrating from a connector is a semiconductor ceramic containing SrTiO 3 as a main component and having voltage-dependent nonlinear resistance characteristics. An electrode 12 and an electrode 13 are arranged on the upper and lower surfaces of a cylindrical element 11 made of.

【0011】図4に示すように、電圧依存性非抵抗体磁
器素子10をコネクタに組み込むとき、導電性接着剤1
6および17でピン15と素子11の電極12および共
通端子14と素子11の電極13をそれぞれ接着する。
このとき、ピン15と素子11の隙間に導電性接着剤1
6の一部が流れ込むことがある。
As shown in FIG. 4, when the voltage-dependent non-resistive ceramic element 10 is incorporated in the connector, the conductive adhesive 1
The pins 15 and the electrode 12 of the element 11 and the common terminal 14 and the electrode 13 of the element 11 are bonded with 6 and 17, respectively.
At this time, the conductive adhesive 1 is placed in the gap between the pin 15 and the element 11.
Part of 6 may flow in.

【0012】[0012]

【発明が解決しようとする課題】上述のように従来の構
成では、ピン15と素子11の隙間に導電性接着剤16
の一部が流れ込み、見掛け上の電極間距離が小さくな
り、バリスタ電圧が低くなり、バリスタ電圧に極性がつ
き、絶縁抵抗が低くなるという問題点を有していた。
As described above, in the conventional structure, the conductive adhesive 16 is provided in the gap between the pin 15 and the element 11.
There is a problem in that a part of the liquid crystal flows in, the apparent distance between the electrodes becomes small, the varistor voltage becomes low, the varistor voltage becomes polar, and the insulation resistance becomes low.

【0013】本発明は上記従来の問題を解決するもの
で、ピンと素子の間の隙間に半田の一部が流れ込んで
も、バリスタ電圧が変化せず、バリスタ電圧に極性がつ
かず、絶縁抵抗が変化しないで、かつ電極の形成がしや
すく、半田付け性が良く、半田耐熱性の良い電圧依存性
非直線抵抗体磁器素子を提供することを目的とする。
The present invention solves the above-mentioned conventional problems. Even if part of the solder flows into the gap between the pin and the element, the varistor voltage does not change, the varistor voltage does not have polarity, and the insulation resistance changes. It is an object of the present invention to provide a voltage-dependent nonlinear resistor porcelain element which is easy to form electrodes, has good solderability, and has good solder heat resistance.

【0014】[0014]

【課題を解決するための手段】この目的を達成するため
に本発明の電圧依存性非直線抵抗体磁器素子は、中心部
に円筒状の貫通孔を有する円筒の半導体セラミックに、
その円筒の両方の端面に配設した外周が円筒の外径より
も小さく内周が貫通孔と同じ径のドーナツ状の電極と貫
通孔の内周面に配設した電極とを一体化させ、円筒の外
周側面の中央部に両方の端面より等間隔の距離をあけて
別の電極を配設し、かつ、これらの電極をオーミック性
電極の下地に非オーミック性電極の上地を重ねた構成と
したものである。
In order to achieve this object, the voltage-dependent nonlinear resistor porcelain element of the present invention comprises a cylindrical semiconductor ceramic having a cylindrical through hole at its center,
The outer periphery arranged on both end faces of the cylinder is smaller than the outer diameter of the cylinder, and the inner periphery is integrated with a donut-shaped electrode having the same diameter as the through hole and the electrode arranged on the inner peripheral face of the through hole, A structure in which different electrodes are arranged at equal distances from both end faces in the center of the outer peripheral side surface of the cylinder, and these electrodes are placed underneath the ohmic electrode and the upper layer of the non-ohmic electrode is overlaid. It is what

【0015】[0015]

【作用】この構成において、円筒の一方の端面と貫通孔
の内周面が一つの電極として一体化されているので、コ
ネクタなどに組み込んだときにピンと素子の隙間に導電
性接着剤が流れ込んでも電極間距離は変化しないことと
なり、共通端子の接続が容易で接着力を大きくすること
となる。
In this structure, since one end face of the cylinder and the inner peripheral face of the through hole are integrated as one electrode, even if the conductive adhesive flows into the gap between the pin and the element when incorporated in the connector or the like. Since the distance between the electrodes does not change, the common terminals can be easily connected and the adhesive force can be increased.

【0016】[0016]

【実施例】以下本発明の一実施例について説明する。EXAMPLE An example of the present invention will be described below.

【0017】SrCO3、CaCO3、BaCO3、Mg
CO3、TiO2を(表1)に示すように組成比を種々変
えて秤量し、ボールミルなどで22時間混合する。
SrCO 3 , CaCO 3 , BaCO 3 , Mg
CO 3 and TiO 2 are weighed at various composition ratios as shown in (Table 1) and mixed for 22 hours by a ball mill or the like.

【0018】[0018]

【表1】 [Table 1]

【0019】次に、乾燥した後、1120℃で4時間焼
成し、再びボールミルなどで22時間粉砕した後、乾燥
し第1成分とする。次いで、第1成分、第2成分、第3
成分を(表1)に示した組成比になるように秤量し、ボ
ールミルなどで22時間混合した後、乾燥し、ポリビニ
ルアルコールなどの有機バインダーを10重量%添加し
て造粒した後、1(t/cm2)のプレス圧力で外径4mm
φ、内径1.4mmφ、高さ2.5mmの円筒状に成形し、
空気中で1110℃で11時間焼成し脱バインダーす
る。次に、還元性雰囲気たとえばN2:H2=9:1のガ
ス中で1420℃で5時間焼成する。さらにその後、酸
化性雰囲気例えば空気中で1050℃で5時間焼成して
素子を形成する。
Next, after drying, it is baked at 1120 ° C. for 4 hours, pulverized again for 22 hours by a ball mill or the like, and then dried to obtain the first component. Then, the first component, the second component, the third
The components were weighed so as to have the composition ratio shown in (Table 1), mixed for 22 hours with a ball mill or the like, dried, and granulated by adding 10% by weight of an organic binder such as polyvinyl alcohol, and 1 ( outer diameter of 4 mm at a pressing pressure of t / cm 2 )
Formed into a cylindrical shape with φ, inner diameter 1.4 mmφ, and height 2.5 mm,
The binder is removed by firing in air at 1110 ° C. for 11 hours. Then, it is fired at 1420 ° C. for 5 hours in a reducing atmosphere such as a gas of N 2 : H 2 = 9: 1. After that, the element is formed by baking at 1050 ° C. for 5 hours in an oxidizing atmosphere such as air.

【0020】図1に示すように、上述のようにして得ら
れた素子5の両方の端面に下地としてオーミック性のA
gなどの導電性ペーストを用いて、外周が円筒の外径よ
りも小さくて内周が貫通孔と同じ径のドーナツ状の電極
を例えばスクリーン印刷などにより設けるとともに、貫
通孔の内周面にオーミック性電極を例えばローラー転写
などの方法により設け、ドーナツ状の電極と貫通孔の内
周面の電極を一体化した下地電極1を形設する。また、
円筒の中央部の外周側面上に両端面より等間隔の距離を
あけてオーミック性電極を例えばローラー転写などの方
法で配設し下地電極3を形設する。次に、上地として非
オーミック性ペーストを用いて、オーミック性電極の上
にオーミック性電極を形成したのと同じ方法で上地電極
2と4を形設し、585℃で7分間焼成して、素子5に
下地電極1,3と上地電極2,4を配設した電圧依存性
抵抗体磁器素子18を形成する。
As shown in FIG. 1, on both end faces of the element 5 obtained as described above, ohmic A
Using a conductive paste such as g, a donut-shaped electrode whose outer circumference is smaller than the outer diameter of the cylinder and whose inner circumference is the same diameter as the through hole is provided by, for example, screen printing, and the inner surface of the through hole is ohmic. The conductive electrode is provided by, for example, a roller transfer method, and the base electrode 1 in which the donut-shaped electrode and the electrode on the inner peripheral surface of the through hole are integrated is formed. Also,
The underlying electrode 3 is formed by arranging ohmic electrodes on the outer peripheral side surface of the central portion of the cylinder at equal intervals from both end surfaces by a method such as roller transfer. Next, using the non-ohmic paste as the upper material, the upper electrode 2 and 4 are formed by the same method as that for forming the ohmic electrode on the ohmic electrode, and fired at 585 ° C. for 7 minutes. Then, the voltage-dependent resistor porcelain element 18 in which the base electrodes 1 and 3 and the top electrodes 2 and 4 are arranged on the element 5 is formed.

【0021】次に図2に示すように、電圧依存性抵抗体
磁器素子18に半田7,8によりピン6および共通端子
9を取り付け、ブタジエンゴムなどの樹脂(図示せず)
を充填し硬化する。このようにして得られた電圧依存性
抵抗体磁器素子の素子単品とコネクタ組み立て後の電気
特性をそれぞれ(表2)と(表3)に示す。
Next, as shown in FIG. 2, the pins 6 and the common terminal 9 are attached to the voltage-dependent resistor porcelain element 18 with the solders 7 and 8, and a resin such as butadiene rubber (not shown).
Fill and cure. The electrical characteristics of the voltage-dependent resistor porcelain element obtained as described above and after assembly of the connector are shown in (Table 2) and (Table 3), respectively.

【0022】[0022]

【表2】 [Table 2]

【0023】[0023]

【表3】 [Table 3]

【0024】(表2)および(表3)のV1mAは、1m
Aの電流を流したときに素子の両端にかかる電圧であ
り、V1mAの極性は、正方向のV1mAと負方向のV1mA
差を正方向のV1mAで割った値であり、絶縁抵抗は、印
加電圧12VDCのときのピン6と共通端子9の間の絶
縁抵抗値である。
V 1mA in (Table 2) and (Table 3) is 1 m
A voltage across the element when current flows in the A, the polarity of V 1mA is a value obtained by dividing the difference between the positive direction of V 1mA and the negative direction of the V 1mA in the positive direction of V 1mA, insulation The resistance is an insulation resistance value between the pin 6 and the common terminal 9 when the applied voltage is 12 VDC.

【0025】この(表2),(表3)から明らかなよう
に、本実施例による電圧依存性抵抗体磁器素子は、V
1mAの極性および絶縁抵抗の点で従来例に比して優れた
効果が得られる。
As is clear from (Table 2) and (Table 3), the voltage-dependent resistor porcelain element according to the present embodiment is V
An excellent effect is obtained compared to the conventional example in terms of 1 mA polarity and insulation resistance.

【0026】また第1成分のSrの一部をCa,Ba,
Mgで置換する割合は実施例では一部しか示さなかった
が、素子の特性としてバリスタ特性とコンデンサ特性を
同時に持つ範囲内であればどのようなものであってもか
まわない。さらに第2成分、第3成分は実施例では一部
の組み合わせについてのみ示したが素子の特性としてバ
リスタ特性とコンデンサ特性を同時に持つものであれば
どのような成分であってもかまわない。
In addition, a part of Sr of the first component is Ca, Ba,
Although only a part of the ratio of substitution with Mg is shown in the examples, any ratio may be used as long as it is within the range of having both varistor characteristics and capacitor characteristics as the element characteristics. Furthermore, the second component and the third component are shown only for some combinations in the embodiments, but any component may be used as long as it has varistor characteristics and capacitor characteristics at the same time as element characteristics.

【0027】また、オーミック性の電極としてはAg以
外にZn,Cu,Niなどがあるがこれら以外でも素子
との間でオーミック接続がとれるものであればどのよう
なものであってもかまわない。また、上地の電極2,4
の種類は半田付け可能で半田耐熱性に優れた非オーミッ
ク性電極であればどのようなものであってもかまわな
い。
Further, as the ohmic electrode, there are Zn, Cu, Ni, etc. other than Ag, but any other electrode may be used as long as an ohmic connection can be made with the element. Also, the upper electrodes 2, 4
The type may be any non-ohmic electrode that can be soldered and has excellent solder heat resistance.

【0028】また前記電圧依存性非直線抵抗体磁器素子
に、たとえばフェライト,コイル,トロイダルコイルな
どからなるインダクタンスを接続する構成にし、ノイズ
除去効果を改善することができる。
Further, it is possible to improve the noise elimination effect by connecting the voltage-dependent nonlinear resistor porcelain element with an inductance composed of, for example, a ferrite, a coil, a toroidal coil or the like.

【0029】以上のように本実施例によれば、円筒の両
方の端面に外周が円筒の外径よりも小さく内周が貫通孔
と同じ径のドーナツ状の電極を設けるとともに、貫通孔
の内周面に電極を設け、ドーナツ状の電極と貫通孔の内
周面の電極を一体化し、円筒の外周側面の中央部に両方
の端面より等間隔の距離をあけて電極を設けることによ
り、円筒の一方の端面と貫通孔の内周面が一つの電極と
して一体化されるため、ピン6と素子5の隙間に半田の
一部が流れ込んでも一体化された上地電極2の上である
ため、見掛けの電極間距離は変化しない。したがって電
気的特性は安定で、バリスタ電圧は変化せず、バリスタ
電圧に極性はつかず、絶縁抵抗は変化せず、電圧依存性
抵抗体磁器素子18をコネクタに組み立てても組み立て
前後の特性の変化は極めて小さく安定になるという効果
が得られる。また、電極間の表面絶縁距離を広くとるこ
とができるため課電寿命特性などの信頼性を向上させる
ことができる。
As described above, according to this embodiment, the donut-shaped electrodes having the outer circumference smaller than the outer diameter of the cylinder and the inner circumference having the same diameter as the through hole are provided on both end surfaces of the cylinder, and the inner diameter of the through hole is increased. The electrode is provided on the peripheral surface, the donut-shaped electrode and the electrode on the inner peripheral surface of the through hole are integrated, and the electrode is provided in the central portion of the outer peripheral side surface of the cylinder at an equal distance from both end surfaces. Since one end surface and the inner peripheral surface of the through hole are integrated as one electrode, even if part of the solder flows into the gap between the pin 6 and the element 5, it is on the integrated upper electrode 2. , The apparent distance between the electrodes does not change. Therefore, the electrical characteristics are stable, the varistor voltage does not change, the varistor voltage does not have polarity, the insulation resistance does not change, and even if the voltage-dependent resistor porcelain element 18 is assembled into a connector, the characteristics change before and after assembly. Is extremely small and stable. Further, since the surface insulation distance between the electrodes can be widened, the reliability such as the electric charge life characteristic can be improved.

【0030】さらに、共通端子9を半田8で上地電極4
と接続するとき、共通端子9の両面から半田付けできる
ため共通端子9と上地電極4の接着力を強くすることが
でき信頼性を向上させることができる。また素子の形状
を円筒状にすることにより素子の長さは長くなるが、素
子の半径方向には寸法を小さくできるためコネクタのピ
ン間隔を小さくすることが可能で、コネクタを小型化す
るのに有効である。また共通端子9を電極の部分に接続
することにより共通端子9からはみでる高さを低くする
ことができる。また電極としては素子の特性を十分に引
き出すために下地電極1,3はオーミック性電極で上地
電極2,4は非オーミック性電極を重ねた構成にするこ
とにより、素子5と電極の界面にバリヤーを形成するこ
となく、素子5の特性を十分に引き出すことができ、容
易に半田付けすることができるとともに電極の半田耐熱
性を改善することができる。さらにこのような構成の電
圧依存性非直線抵抗体磁器素子は前後左右が対称の構造
であるため方向性がなく組み立て時に素子の前後左右の
判定が不要であり、組み立て工数を削減することができ
る。
Further, the common terminal 9 is soldered to the upper electrode 4
When connecting with, it is possible to solder from both sides of the common terminal 9, so that the adhesive force between the common terminal 9 and the upper electrode 4 can be strengthened and the reliability can be improved. Although the length of the element is increased by making the element cylindrical, the size of the element can be reduced in the radial direction, so that the pin interval of the connector can be reduced and the size of the connector can be reduced. It is valid. Further, the height protruding from the common terminal 9 can be reduced by connecting the common terminal 9 to the electrode portion. Further, in order to sufficiently bring out the characteristics of the element, the underlying electrodes 1 and 3 are ohmic electrodes, and the upper electrodes 2 and 4 are non-ohmic electrodes. The characteristics of the element 5 can be sufficiently brought out without forming a barrier, soldering can be easily performed, and the solder heat resistance of the electrode can be improved. Furthermore, since the voltage-dependent nonlinear resistor porcelain element having such a structure has a symmetrical front-back and left-right structure, there is no directionality and it is not necessary to judge the front-back direction and left-right direction of the element at the time of assembly, and the number of assembly steps can be reduced. ..

【0031】[0031]

【発明の効果】以上の実施例の説明からも明らかなよう
に本発明は、中心部に円筒状の貫通孔を有する円筒の半
導体セラミックに、その円筒の両方の端面に配設した外
周が円筒の外径よりも小さく内周が貫通孔と同じ径のド
ーナツ状の電極と貫通孔の内周面に配設した電極とを一
体化させ、円筒の外周側面の中央部に両方の端面より等
間隔の距離をあけて別の電極を配設し、かつこれらの電
極をオーミック性電極の下地に非オーミック性電極の上
地を重ねた構成とすることにより、ピンと素子の間に半
田の一部が流れ込んでもバリスタ電圧が変化せず、バリ
スタ電圧に極性がつかず絶縁抵抗が変化しないで、かつ
電極の形成がしやすく、半田付け性が良く、半田耐熱性
の良い優れた電圧依存性非直線抵抗体磁器素子を実現で
きるものである。
As is apparent from the above description of the embodiments, the present invention provides a cylindrical semiconductor ceramic having a cylindrical through hole at its center, and the outer circumferences arranged on both end faces of the cylinder are cylindrical. The donut-shaped electrode whose inner diameter is smaller than the outer diameter of the through hole and whose inner diameter is the same as the diameter of the through hole is integrated with the electrode arranged on the inner peripheral surface of the through hole, and the end surface of the cylindrical outer peripheral surface is more equal than both end surfaces. By arranging other electrodes with a space between them and by arranging these electrodes on top of the ohmic electrodes and overlaying the non-ohmic electrodes on top of each other, a part of the solder is placed between the pins and the element. Varistor voltage does not change even when flowing in, the varistor voltage does not have polarity and the insulation resistance does not change, electrodes are easily formed, solderability is good, and soldering heat resistance is excellent. It is possible to realize a resistor ceramic element.

【図面の簡単な説明】[Brief description of drawings]

【図1】本発明の一実施例の電圧依存性非直線抵抗体磁
器素子の断面図
FIG. 1 is a sectional view of a voltage-dependent nonlinear resistor ceramic element according to an embodiment of the present invention.

【図2】同電圧依存性非直線抵抗体磁器素子をコネクタ
に接続したときの断面略図
FIG. 2 is a schematic cross-sectional view of the same voltage-dependent nonlinear resistor porcelain element connected to a connector.

【図3】従来の電圧依存性非直線抵抗体磁器素子の断面
FIG. 3 is a cross-sectional view of a conventional voltage-dependent nonlinear resistor ceramic element.

【図4】同電圧依存性非直線抵抗体磁器素子をコネクタ
に接続したときの断面略図
FIG. 4 is a schematic cross-sectional view of the same voltage-dependent nonlinear resistor porcelain element connected to a connector.

【符号の説明】[Explanation of symbols]

1 下地電極 2 上地電極 3 下地電極 4 上地電極 5 素子 1 Base electrode 2 Top electrode 3 Base electrode 4 Top electrode 5 element

Claims (2)

【特許請求の範囲】[Claims] 【請求項1】中心部に円筒状の貫通孔を有する円筒の形
状でSrTiO3を主成分とした電圧依存性非直線抵抗
特性を有する半導体セラミックと、前記円筒の両方の端
面に配設した外周が前記円筒の外径よりも小さく内周が
前記貫通孔と同じ径のドーナツ状の電極と前記貫通孔の
内周面に配設した電極とを一体化した電極と、前記円筒
の外周側面の中央部に両方の端面より等間隔の距離をあ
けて配設した別の電極を備え、かつ、これらの電極をオ
ーミック性電極の下地に非オーミック性電極の上地を重
ねた構成とした電圧依存性非直線抵抗体磁器素子。
1. A semiconductor ceramic having a cylindrical shape having a cylindrical through hole in the center thereof and having voltage-dependent nonlinear resistance characteristics containing SrTiO 3 as a main component, and an outer periphery provided on both end faces of the cylinder. Is an electrode that is smaller than the outer diameter of the cylinder and has an inner periphery that is the same as the through-hole and has a donut-shaped electrode and an electrode that is disposed on the inner peripheral surface of the through-hole. Voltage dependence with separate electrodes in the center, spaced apart from both end faces, and non-ohmic electrodes on top of ohmic electrodes Non-linear resistor porcelain element.
【請求項2】主成分SrTiO3のうちのSrの一部を
Ca,Ba,Mgのうち少なくとも一つ以上の元素で置
換した電圧依存性非直線抵抗特性を有する半導体セラミ
ックを備えた請求項1記載の電圧依存性非直線抵抗体磁
器素子。
2. A semiconductor ceramic having voltage-dependent nonlinear resistance characteristics, wherein a part of Sr of the main component SrTiO 3 is replaced with at least one element of Ca, Ba and Mg. The voltage-dependent nonlinear resistor porcelain element described.
JP4050307A 1992-03-09 1992-03-09 Voltage dependent non-linear resistor ceramic element Pending JPH05251216A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4050307A JPH05251216A (en) 1992-03-09 1992-03-09 Voltage dependent non-linear resistor ceramic element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4050307A JPH05251216A (en) 1992-03-09 1992-03-09 Voltage dependent non-linear resistor ceramic element

Publications (1)

Publication Number Publication Date
JPH05251216A true JPH05251216A (en) 1993-09-28

Family

ID=12855244

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4050307A Pending JPH05251216A (en) 1992-03-09 1992-03-09 Voltage dependent non-linear resistor ceramic element

Country Status (1)

Country Link
JP (1) JPH05251216A (en)

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