JPH0442504A - Voltage dependent nonlinear resistance porcelain element - Google Patents

Voltage dependent nonlinear resistance porcelain element

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Publication number
JPH0442504A
JPH0442504A JP2150927A JP15092790A JPH0442504A JP H0442504 A JPH0442504 A JP H0442504A JP 2150927 A JP2150927 A JP 2150927A JP 15092790 A JP15092790 A JP 15092790A JP H0442504 A JPH0442504 A JP H0442504A
Authority
JP
Japan
Prior art keywords
electrode
cylinder
ohmic
electrodes
hole
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2150927A
Other languages
Japanese (ja)
Inventor
Keiichi Noi
野井 慶一
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP2150927A priority Critical patent/JPH0442504A/en
Publication of JPH0442504A publication Critical patent/JPH0442504A/en
Pending legal-status Critical Current

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Abstract

PURPOSE:To facilitate soldering and to improve a solder heat resistance by uniting a doughnut-form electrode of a semiconductor ceramic cylinder with an electrode on an inner circumferential plane into one body and arranging a counter electrode on an outer circumferential plane on another end plane side at a distance from the end plane, wherein a fundamental electrode is an ohmic electrode and a non-ohmic electrode is overlaid as an upper one. CONSTITUTION:On one end plane of a sintered body, a doughnut-form electrode is arranged by using an ohmic conductive paste such as Ag as a fundamental one, and an ohmic electrode is arranged on an inner circumferential plane of a through-hole, and these electrodes are united into one body. On another end plane side of a cylinder, a counter ohmic electrode is arranged at a distance from the end plane, thereby forming a fundamental electrode 3. As an upper electrode, upper electrodes 2 and 4 consisting of a non-ohmic electrode is formed by using a non-ohmic paste, followed by sintering to make an element 5. Then, a pin 6 and a common terminal 14 are attached with a solder 7 and a solder 13 and a periphery around an element 12 where fundamental electrodes 8 and 10 and upper electrodes 9 and 11 are arranged is molded with a resin.

Description

【発明の詳細な説明】 産業上の利用分野 本発明は電気機器、電子機器で発生する異常高電圧、ノ
イズ、静電気などから機器の半導体及び回路を保護する
ためのコンデンサ特性とバリスタ特性を有する電圧依存
性非直線抵抗体磁器素子に関するものである。
DETAILED DESCRIPTION OF THE INVENTION Field of Industrial Application The present invention relates to a voltage having capacitor characteristics and varistor characteristics to protect semiconductors and circuits of equipment from abnormal high voltage, noise, static electricity, etc. generated in electrical equipment and electronic equipment. The present invention relates to dependent nonlinear resistance ceramic elements.

従来の技術 従来、各種の電気機器、電子機器における異常高電圧の
吸収、ノイズの除去、火花消去、静電気対策のために電
圧依存性非直線抵抗特性を有するSiCバリスタや、Z
nO系バリスタなどが使用されている。このようなバリ
スタの電圧−電流特性は近似的に次式のように表すこと
ができる。
Conventional technology Conventionally, SiC varistors and Z
nO type varistors are used. The voltage-current characteristics of such a varistor can be approximately expressed as in the following equation.

I = (V/C)α ここで、■は電流、■は電圧、Cはバリスタ固有の定数
、αは電圧−電流非直線指数である。
I = (V/C) α Here, ■ is a current, ■ is a voltage, C is a constant specific to the varistor, and α is a voltage-current nonlinear index.

SiCバリスタのαは2〜7程度、zno系バリスクで
はαが50にもおよぶものがある。このようなバリスタ
、は比較的高い電圧の吸収には優れた性能を有している
が、誘電率が低く、固育の静電容量が小さいため、バリ
スタ電圧以下の比較的低い電圧の吸収にはほとんと効果
を示さず、また誘電損失tanδが5〜10%と大きい
The α of SiC varistors is about 2 to 7, and the α of some ZNO-based varistors is as high as 50. Such varistors have excellent performance in absorbing relatively high voltages, but because of their low dielectric constant and small static capacitance, they cannot absorb relatively low voltages below the varistor voltage. shows almost no effect, and the dielectric loss tan δ is as large as 5 to 10%.

一方、これらの低電圧のノイズなどの除去には見掛は上
の誘電率が5X104程度で、tanδが1%前後の半
導体コンデンサが利用されている。しかし、このような
半導体コンデンサはサージなどによりある限度以上の電
圧または電流か印加されると、静電容量が減少したり破
壊したりして、コンデンサとしての機能を果たさなくな
ったりする。
On the other hand, semiconductor capacitors with an apparent dielectric constant of about 5×10 4 and a tan δ of about 1% are used to remove these low voltage noises. However, when a voltage or current exceeding a certain limit is applied to such a semiconductor capacitor due to a surge or the like, the capacitance decreases or is destroyed, and the capacitor no longer functions as a capacitor.

そこで最近になって5rTjO:+を主成分とし、バリ
スタ特性とコンデン号特性の両方の機能を有するものが
開発され、コンピュータなどの電子機器におけるIC,
LSIなどの半導体素子及び回路の保護や、電子機器を
相互に継ぐケーブルやコネクタなどから侵入するノイズ
の除去に利用されている。
Recently, a product containing 5rTjO:+ as a main component and having both varistor and capacitor characteristics has been developed, and it is used as an IC in electronic devices such as computers.
It is used to protect semiconductor elements and circuits such as LSIs, and to remove noise that enters from cables and connectors that interconnect electronic devices.

発明が解決しようとする課題 前記のSrTiO3を主成分とするバリスタとコンデン
サの両方の機能を有する素子をコネクタなどから侵入す
るノイズの除去に使用する場合、素子の構成は一般的に
第3図のようになっている。第3図において、15及び
16は電極、17は素子である。
Problems to be Solved by the Invention When using the above-mentioned SrTiO3-based element having the functions of both a varistor and a capacitor to remove noise that enters from a connector etc., the configuration of the element is generally as shown in Fig. 3. It looks like this. In FIG. 3, 15 and 16 are electrodes, and 17 is an element.

そして、このような素子をコネクタに組み込むと一般的
に第4図のようになる。ところが第4図のような構成に
すると、ピン18と素子22の隙間に半田19の一部が
流れ込み、見掛は上の電極間距離が小さくなり、バリス
タ電圧が低くなり、またバリスタ電圧に極性がつき、絶
縁抵抗が低くなるといった欠点を有していた。第4図に
おいて、20及び21は電極、23は半田、24は共通
端子である。
When such an element is incorporated into a connector, it generally becomes as shown in FIG. However, when the configuration shown in Fig. 4 is used, a portion of the solder 19 flows into the gap between the pin 18 and the element 22, and the distance between the upper electrodes appears to become smaller, lowering the varistor voltage and causing polarity in the varistor voltage. This has the disadvantage that the insulation resistance becomes low. In FIG. 4, 20 and 21 are electrodes, 23 is solder, and 24 is a common terminal.

そこで本発明では、ピンと素子の間の隙間に半田の一部
が流れ込んでもバリスタ電圧が変化せず、バリスタ電圧
に極性がつかず、絶縁抵抗が変化しない構成で、しかも
電極の形成かしやすく、半田付は性が良く、半田耐熱性
に優れた安価な素子を提供することを目的とするもので
ある。
Therefore, in the present invention, even if a part of the solder flows into the gap between the pin and the element, the varistor voltage does not change, the varistor voltage does not have polarity, and the insulation resistance does not change, and the electrodes can be easily formed. The purpose is to provide an inexpensive element that has good soldering properties and excellent soldering heat resistance.

課題を解決するための手段 前記の問題点を解決するために本発明では、5rTiO
:+を主成分とした電圧依存性非直線抵抗特性を有する
半導体セラミ’7りを円筒の中央部に円筒状の貫通穴を
有するように形成し、前記円筒の一方の端面に外周が前
記円筒の外径よりも小さく内周が前記貫通穴と同じ径の
ドーナツ状の電極を設けるとともに、前記貫通穴の内周
面に電極を設け、前記ドーナツ状の電極と前記貫通穴の
内周面の電極を一体化し、前記円筒の他方の端面側で前
記円筒の外周面上に端面より距離をあけて対向する電極
を設け、かつこれらに使用する電極は下地がオーミック
性電極であり、上地に非オーミック性電極を重ねたこと
を特徴とする電圧依存性非直線抵抗体磁器素子を得るこ
とにより、問題を解決しようとするものである。
Means for Solving the Problems In order to solve the above problems, in the present invention, 5rTiO
: A semiconductor ceramic having a voltage-dependent nonlinear resistance characteristic mainly composed of + is formed so as to have a cylindrical through hole in the center of the cylinder, and one end surface of the cylinder has an outer periphery that is similar to that of the cylinder. A donut-shaped electrode is provided whose inner circumference is smaller than the outer diameter of the through hole and has the same diameter as the through hole, and an electrode is provided on the inner circumferential surface of the through hole, and the donut shaped electrode and the inner circumferential surface of the through hole are provided with an electrode. The electrodes are integrated, and electrodes are provided on the outer circumferential surface of the cylinder on the other end surface side of the cylinder to face each other at a distance from the end surface, and the electrodes used for these have an ohmic electrode on the base and an ohmic electrode on the top surface. The present invention attempts to solve this problem by obtaining a voltage-dependent nonlinear resistance ceramic element characterized by stacking non-ohmic electrodes.

作用 本発明の構成によれば、前記円筒の一方の端面に外周か
前記円筒の外径よりも小さく内周か前記貫通穴と同じ径
のドーナツ状の電極を設けるとともに、前記貫通穴の内
周面に電極を設け、前記ドーナツ状の電極と前記貫通穴
の内周面の電極を一体化し、前記円筒の他方の端面側で
前記円筒の外周面上に端面より距離をあlすで対向する
電極を設けた構成にすることにより、前記円筒の一方の
端面と前記貫通穴の内周面が一つの電極として一体化さ
れるため、コネクタなどに組み込んだ際にピンと素子の
隙間に半田の一部が流れ込んでも一体化された電極の上
であるため、見掛は上の電極間距離は変化しない。従っ
て、電気的特性は安定でバリスタ電圧は変化せず、バリ
スタ電圧に極性はつかず、絶縁抵抗は変化しないことに
なる。また、前記円筒の他方の端面側で前記円筒の外周
面上に端面より距離をあけて対向する電極を設けること
により、電極間の表面絶縁距離を広くとることができる
ため、課電寿命特性などの信頼性を向上させることがで
きる。さらに、電極としては素子の特性を十分に引き出
すために下地はオーミック性電極で上地に非オーミック
性電極を重ねた構成にすることにより、素子と電極の界
面にノくリヤーを形成することなく素子の特性を十分に
引き出すことができ、容易に半田付けでき、半田耐熱性
を向上させることができることとなる。
According to the configuration of the present invention, a donut-shaped electrode is provided on one end surface of the cylinder, the outer periphery of which is smaller than the outer diameter of the cylinder, and the inner periphery of which is the same diameter as the through hole. An electrode is provided on the surface, and the donut-shaped electrode and the electrode on the inner circumferential surface of the through hole are integrated, and on the other end surface side of the cylinder, they are opposed to each other at a distance from the end surface on the outer circumferential surface of the cylinder. By configuring the structure with electrodes, one end surface of the cylinder and the inner peripheral surface of the through hole are integrated as one electrode, so when it is assembled into a connector etc., a drop of solder is applied to the gap between the pin and the element. Even if the part flows in, the distance between the upper electrodes does not appear to change because it is above the integrated electrode. Therefore, the electrical characteristics are stable, the varistor voltage does not change, the varistor voltage has no polarity, and the insulation resistance does not change. In addition, by providing opposing electrodes on the outer circumferential surface of the cylinder on the other end surface side of the cylinder at a distance from the end surface, the surface insulation distance between the electrodes can be widened, so that the energized life characteristics etc. reliability can be improved. Furthermore, in order to fully bring out the characteristics of the element, the electrode is configured with an ohmic electrode as the base layer and a non-ohmic electrode on the upper layer, thereby eliminating the formation of a layer at the interface between the element and the electrode. This means that the characteristics of the element can be fully brought out, it can be easily soldered, and the soldering heat resistance can be improved.

実施例 以下に実施例を挙げて本発明を具体的に説明する。Example The present invention will be specifically described below with reference to Examples.

まず、5rCO:+、CaCO3,BaCO3゜MgC
O3,TiO2を下記の第1表に示すように組成比を種
々変えて秤量し、ボールミルなどで22Hr混合する。
First, 5rCO: +, CaCO3, BaCO3゜MgC
O3 and TiO2 are weighed at various composition ratios as shown in Table 1 below, and mixed for 22 hours using a ball mill or the like.

次に、乾燥した後、1120℃で4Hr焼成し、再びボ
ールミルなどで22Hr粉砕した後、乾燥し、第1成分
とする。次いで、第1成分、第2成分、第3成分を下記
の第1表に示した組成比になるように秤量し、ボールミ
ルなとて22Hr混合した後、乾燥し、ポリビニルアル
コールなどの有機バインダーをlQwt%添加して造粒
した後、1(t/cut)のプレス圧力で外径4φ、内
径1.4φ、高さ2.5t(+am)の円筒状に成形し
、空気中で1110℃で11Hr焼成し脱バインダーす
る。次に、還、光性雰囲気、例えばN2: H2=9 
: 1のガス中で1420℃で5Hr焼成する。さらに
その後、酸化性雰囲気、例えば空気中で1050℃で5
Hr焼成する。
Next, after drying, it is baked at 1120° C. for 4 hours, pulverized again for 22 hours using a ball mill, etc., and then dried to obtain the first component. Next, the first component, second component, and third component were weighed to have the composition ratio shown in Table 1 below, mixed in a ball mill for 22 hours, dried, and mixed with an organic binder such as polyvinyl alcohol. After adding 1Qwt% and granulating it, it was molded into a cylindrical shape with an outer diameter of 4φ, an inner diameter of 1.4φ, and a height of 2.5t (+am) at a press pressure of 1 (t/cut), and heated at 1110°C in air. The binder was removed by firing for 11 hours. Next, a phosphorescent, optical atmosphere, for example N2: H2=9
: Calcinate in gas of 1 at 1420°C for 5 hours. Furthermore, after that, 5 hours at 1050°C in an oxidizing atmosphere, e.g. air.
Bake for hours.

こうして得られた焼結体の一方の端面に、下地としてオ
ーミック性のAgなどの導電性ペーストを用いて外周が
前記円筒の外径よりも小さく内周が貫通穴と同じ径のド
ーナツ状の電極を例えばスクリーン印刷などにより設け
るとともに、前記貫通穴の内周面にオーミック性電極を
例えばローラー転写などの方法により設け、前記ドーナ
ツ状の電極と前記貫通穴の内周面の電極を一体化し、第
1図に示すように下地電極1を形成する。また、前記円
筒の他方の端面側で前記円筒の外周面上に端面より距離
をあけて対向するオーミック性電極を例えばローラー転
写などの方法で設け、下地電極3を形成する。次に、上
地としてA、gなとの非オーミック性ペーストを用いて
オーミック性電極の上にオーミック性電極を形成したの
と同じ方法で非オーミック性電極からなる上地電極24
を形成し、585℃、7m1nで焼成する。このように
して素子5が作製される。
On one end surface of the sintered body thus obtained, a donut-shaped electrode is formed using a conductive paste such as ohmic Ag as a base, and the outer circumference is smaller than the outer diameter of the cylinder and the inner circumference has the same diameter as the through hole. is provided by, for example, screen printing, and an ohmic electrode is provided on the inner peripheral surface of the through hole by a method such as roller transfer, and the donut-shaped electrode and the electrode on the inner peripheral surface of the through hole are integrated. A base electrode 1 is formed as shown in FIG. Further, on the other end surface side of the cylinder, an ohmic electrode is provided on the outer circumferential surface of the cylinder, facing away from the end surface, by a method such as roller transfer, to form the base electrode 3. Next, an upper electrode 24 made of a non-ohmic electrode is formed using the same method as that of forming an ohmic electrode on an ohmic electrode using a non-ohmic paste such as A or G as an upper layer.
is formed and fired at 585° C. and 7 ml. In this way, the element 5 is manufactured.

そして、前記の素子5をコネクタに組み込む場合は、第
2図に示したように半田7.半田13などによりピン6
及び共通端子14を取り付け、フタジエンゴムなどの樹
脂(図示せず)で下地電極8.10及び上地電極9,1
1を設けた素子12の周囲などをモールドする。このよ
うにして得られた素子の特性を素子単品とコネクタ組み
立て後について下記の第2表に示ス。
When incorporating the element 5 into a connector, solder 7. as shown in FIG. Pin 6 with solder 13 etc.
and the common terminal 14 are attached, and the base electrode 8.10 and the upper base electrode 9,1 are connected with resin such as phthalene rubber (not shown).
The periphery of the element 12 provided with 1 is molded. The characteristics of the element thus obtained are shown in Table 2 below for the element alone and after the connector is assembled.

なお、第2表においてVl、nAは1mAの電流を流し
た時に素子の両端にかかる電圧であり、■1□、の極性
は正方向のVlmAと負方向の■1□の差を正方向のV
lmAで割った値であり、絶縁抵抗は印加電圧12 V
、 D、Cの時のピン6と共通端子14の間の絶縁抵抗
値である。
In Table 2, Vl, nA is the voltage applied to both ends of the element when a current of 1 mA flows, and the polarity of ■1□ is the difference between VlmA in the positive direction and ■1□ in the negative direction. V
It is the value divided by lmA, and the insulation resistance is the applied voltage of 12 V.
, D, and C are the insulation resistance values between pin 6 and common terminal 14.

(以  下  余  白) ここで、第1成分のSrの一部をCa、Ba。(Hereafter, remaining white) Here, part of the first component Sr is Ca and Ba.

Mgで置換する割合は実施例では一部しか示さなかった
が、素子の特性としてバリスタ特性とコンデンサ特性を
同時に持つ範囲内であればどのようなものであってもか
まわない。また、第2成分第3成分は実施例では一部の
組み合わせについてのみ示したが、素子の特性としてバ
リスタ特性とコンデンサ特性を同時に持つものであれば
どのような成分であってもかまわない。さらに、オーミ
ック性の電極としてはAg以外にZn、CuN1などが
あるが、これら以外でも素子との間でオーミック接続が
とれるものであればどのようなものであってもかまわな
い。また、上地電極の種類は半田付は可能で半田耐熱性
に優れた非オーミック性電極であればどのようなもので
あってもかまわない。さらに、前記電圧依存性非直線抵
抗体磁器素子に例えばフェライト、コイル、トロイダイ
ルコイルなどからなるインダクタンスを接続する構成に
し、ノイズ除去効果を改善することができる。
Although only a portion of the substitution ratio with Mg was shown in the embodiment, it may be any value as long as the element has both varistor and capacitor characteristics. Further, although only some combinations of the second and third components are shown in the embodiment, any component may be used as long as it has both varistor characteristics and capacitor characteristics as the element characteristics. Further, as the ohmic electrode, there are Zn, CuN1, etc. other than Ag, but any material other than these may be used as long as it can establish an ohmic connection with the element. Further, the upper electrode may be any non-ohmic electrode that can be soldered and has excellent solder heat resistance. Furthermore, the noise removal effect can be improved by connecting an inductance made of, for example, ferrite, a coil, a toroidal coil, etc. to the voltage-dependent nonlinear resistance ceramic element.

発明の効果 以上に示したように本発明によれば、前記円筒の一方の
端面に外周が前記円筒の外径よりも小さく内周が前記貫
通穴と同じ径のドーナツ状の電極を設けるとともに、前
記貫通穴の内周面に電極を設け、前記ドーナツ状の電極
と前記貫通穴の内周面の電極を一体化し、前記円筒の他
方の端面側で前記円筒の外周面上に端面より距離をあけ
て対向する電極を設けた構成にすることにより、前記円
筒の一方の端面と前記貫通穴の内周面か一つの電極とし
て一体化されるため、コネクタなとに組み込んだ際にビ
ンと素子の隙間に半田の一部が流れ込んでも一体化され
た電極の上であるため、見掛は上の電極間距離は変化し
ない。従って、電気的特性は安定でバリスタ電圧は変化
せず、バリスタ電圧に極性はつかず、絶縁抵抗は変化せ
ず、素子をコネクタに組み立てても組み立て前後の特性
の変化は極めて小さく安定になるという効果が得られる
。また、前記円筒の他方の端面側で前記円筒の外周面上
に端面より距離をあけて対向する電極を設けることによ
り、電極間の表面絶縁距離を広くとることができるため
、課電寿命特性なとの信頼性を向上させることができる
。さらに、素子の形状を円筒状にすることにより素子の
長さは長くなるが、素子の半径方向には寸法を小さくで
きるため、コネクタのビン間隔を小さくすることか可能
で、コネクタを小型化するのに有効である。そして、素
子をコネクタなどに組み込む際に、前記共通端子の両面
から半田付けできるため、前記共通端子と素子との接着
力を強くすることができ、信頼性を向上させることがで
きる。また、前J己共通端子を対向する電極の部分に接
続することにより、前記共通端子からはみでる高さを低
くすることができる。そして、電極としては素子の特性
を十分に引き出すために、下地はオーミック性電極で上
地は非オーミック性電極を重ねた構成にすることにより
、素子と電極の界面にバリヤーを形成することなく素子
の特性を十分に引き出すことかでき、容易に半田付けす
ることかできると共に電極の半田耐熱性を改善すること
ができる。
Effects of the Invention As described above, according to the present invention, a donut-shaped electrode is provided on one end surface of the cylinder, and the outer circumference is smaller than the outer diameter of the cylinder and the inner circumference has the same diameter as the through hole. An electrode is provided on the inner circumferential surface of the through hole, the donut-shaped electrode and the electrode on the inner circumferential surface of the through hole are integrated, and an electrode is provided on the outer circumferential surface of the cylinder on the other end surface side of the cylinder at a distance from the end surface. By creating a configuration in which a hole is opened and opposing electrodes are provided, one end surface of the cylinder and the inner peripheral surface of the through hole are integrated as one electrode, so that when assembled into a connector etc., the bottle and element Even if a part of the solder flows into the gap between the electrodes, the distance between the electrodes does not appear to change because the solder is on the integrated electrode. Therefore, the electrical characteristics are stable, the varistor voltage does not change, the varistor voltage has no polarity, the insulation resistance does not change, and even when the element is assembled into a connector, the change in characteristics before and after assembly is extremely small and stable. Effects can be obtained. In addition, by providing opposing electrodes on the outer peripheral surface of the cylinder on the other end surface side of the cylinder at a distance from the end surface, the surface insulation distance between the electrodes can be widened, so that the energized life characteristics can be improved. reliability can be improved. Furthermore, by making the element cylindrical, the length of the element becomes longer, but the dimensions of the element can be reduced in the radial direction, making it possible to reduce the interval between the bins of the connector, making the connector more compact. It is effective for When the element is assembled into a connector or the like, since the common terminal can be soldered from both sides, the adhesive force between the common terminal and the element can be strengthened, and reliability can be improved. Furthermore, by connecting the front common terminal to the opposing electrode portion, the height protruding from the common terminal can be reduced. In order to fully bring out the characteristics of the element, the electrodes are constructed with an ohmic electrode on the base layer and a non-ohmic electrode on the upper layer. The characteristics of the electrode can be fully brought out, it can be easily soldered, and the soldering heat resistance of the electrode can be improved.

【図面の簡単な説明】[Brief explanation of drawings]

第1図は本発明による素子を示す断面図、第2図は本発
明による素子をコネクタに組み立てた時の断面図、第3
図は従来例による素子を示す断面図、第4図は従来例に
よる素子をコネクタに組み立てた時の断面図である。 1.3,8.10・・・・・・下地電極、2,4.91
1・・・・・・上地電極、5,12・・・・・・本発明
による素子、6・・・・・・ビン、7.13・・・・・
・半田、14・・・・・・共通端子。 代理人の氏名 弁理士 粟野垂平 ほか1名第3図 第4図
Fig. 1 is a sectional view showing an element according to the present invention, Fig. 2 is a sectional view when the element according to the invention is assembled into a connector, and Fig. 3 is a sectional view showing an element according to the present invention.
The figure is a sectional view showing a conventional element, and FIG. 4 is a sectional view of the conventional element assembled into a connector. 1.3, 8.10... Base electrode, 2, 4.91
1... Upper electrode, 5, 12... Element according to the present invention, 6... Bin, 7.13...
・Solder, 14... Common terminal. Name of agent: Patent attorney Takuhei Awano and one other person Figure 3 Figure 4

Claims (2)

【特許請求の範囲】[Claims] (1)SrTiO_3を主成分とした電圧依存性非直線
抵抗特性を有する半導体セラミックを円筒の中央部に円
筒状の貫通穴を有するように形成し、前記円筒の一方の
端面に外周が前記円筒の外径よりも小さく内周が前記貫
通穴と同じ径のドーナツ状の電極を設けるとともに、前
記貫通穴の内周面に電極を設け、前記ドーナツ状の電極
と前記貫通穴の内周面の電極を一体化し、前記円筒の他
方の端面側で前記円筒の外周面上に端面より距離をあけ
て対向する電極を設け、かつ、これらに使用する電極は
下地がオーミック性電極であり、上地に非オーミック性
電極を重ねたことを特徴とする電圧依存性非直線抵抗体
磁器素子。
(1) A semiconductor ceramic mainly composed of SrTiO_3 and having voltage-dependent non-linear resistance characteristics is formed to have a cylindrical through hole in the center of the cylinder, and the outer periphery of the cylinder is formed on one end surface of the cylinder. A donut-shaped electrode smaller than the outer diameter and having an inner circumference the same diameter as the through-hole is provided, and an electrode is provided on the inner circumferential surface of the through-hole, and the donut-shaped electrode and the electrode on the inner circumferential surface of the through-hole are provided. are integrated, and electrodes are provided on the outer peripheral surface of the cylinder on the other end surface side of the cylinder to face each other at a distance from the end surface, and the electrodes used for these have an ohmic electrode on the base and an ohmic electrode on the top surface. A voltage-dependent nonlinear resistance ceramic element characterized by stacking non-ohmic electrodes.
(2)主成分のSrの一部をCa,Ba,Mgのうちの
少なくとも一つ以上の元素で置換したことを特徴とする
請求項1記載の電圧依存性非直線抵抗体磁器素子。
(2) The voltage-dependent nonlinear resistance ceramic element according to claim 1, wherein a part of the main component Sr is replaced with at least one element selected from Ca, Ba, and Mg.
JP2150927A 1990-06-08 1990-06-08 Voltage dependent nonlinear resistance porcelain element Pending JPH0442504A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2150927A JPH0442504A (en) 1990-06-08 1990-06-08 Voltage dependent nonlinear resistance porcelain element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2150927A JPH0442504A (en) 1990-06-08 1990-06-08 Voltage dependent nonlinear resistance porcelain element

Publications (1)

Publication Number Publication Date
JPH0442504A true JPH0442504A (en) 1992-02-13

Family

ID=15507453

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2150927A Pending JPH0442504A (en) 1990-06-08 1990-06-08 Voltage dependent nonlinear resistance porcelain element

Country Status (1)

Country Link
JP (1) JPH0442504A (en)

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