JP3003362B2 - Voltage-dependent nonlinear resistor porcelain element - Google Patents

Voltage-dependent nonlinear resistor porcelain element

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Publication number
JP3003362B2
JP3003362B2 JP4050310A JP5031092A JP3003362B2 JP 3003362 B2 JP3003362 B2 JP 3003362B2 JP 4050310 A JP4050310 A JP 4050310A JP 5031092 A JP5031092 A JP 5031092A JP 3003362 B2 JP3003362 B2 JP 3003362B2
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JP
Japan
Prior art keywords
voltage
electrode
cylinder
diameter
electrodes
Prior art date
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Expired - Fee Related
Application number
JP4050310A
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Japanese (ja)
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JPH05251217A (en
Inventor
慶一 野井
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Corp
Panasonic Holdings Corp
Original Assignee
Panasonic Corp
Matsushita Electric Industrial Co Ltd
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Priority to JP4050310A priority Critical patent/JP3003362B2/en
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Expired - Fee Related legal-status Critical Current

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Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【産業上の利用分野】本発明は電気機器や電子機器で発
生する異常高電圧、ノイズ、静電気などから機器の半導
体および回路を保護するためのコンデンサ特性とバリス
タ特性を有する電圧依存性非直線抵抗体磁器素子に関す
る。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a voltage-dependent non-linear resistor having a capacitor characteristic and a varistor characteristic for protecting a semiconductor and a circuit of a device from abnormal high voltage, noise, static electricity, etc. generated in an electric device or an electronic device. It relates to a body porcelain element.

【0002】[0002]

【従来の技術】従来、各種の電気機器や電子機器におけ
る異常高電圧の吸収、ノイズの除去、火花消去、静電気
対策のために電圧依存性非直線抵抗特性を有するSiC
バリスタや、ZnO系バリスタなどが使用されている。
このようなバリスタの電圧−電流特性は近似的に次式の
ように表すことができる。
2. Description of the Related Art Conventionally, SiC having a voltage-dependent non-linear resistance characteristic for absorbing abnormal high voltage, eliminating noise, eliminating sparks, and taking measures against static electricity in various electric and electronic devices.
Varistors and ZnO-based varistors are used.
The voltage-current characteristics of such a varistor can be approximately expressed by the following equation.

【0003】[0003]

【数1】 (Equation 1)

【0004】ここで、Iは電流、Vは電圧、Cはバリス
タ固有の定数、αは電圧−電流非直線指数である。
Here, I is a current, V is a voltage, C is a constant unique to a varistor, and α is a voltage-current nonlinear exponent.

【0005】SiCバリスタのαは2〜7で、ZnO系
バリスタではαが50にもおよぶものがある。このよう
なバリスタは比較的高い電圧の吸収には優れた性能を有
しているが、誘電率が低く、固有の静電容量が小さいた
めバリスタ電圧以下の比較的低い電圧の吸収にはほとん
ど効果を示さず、また誘電損失tanδが5〜10%と
大きい。
[0005] α of a SiC varistor is 2 to 7, and α of some ZnO-based varistors reaches 50. Such varistors have excellent performance in absorbing relatively high voltage, but have little effect on absorbing relatively low voltage below varistor voltage due to low dielectric constant and small inherent capacitance. And the dielectric loss tan δ is as large as 5 to 10%.

【0006】一方、これらの低電圧のノイズなどの除去
には見かけの誘電率が5×104程度で、tanδが1
%前後の半導体コンデンサが利用されている。しかし、
このような半導体コンデンサはサージなどによりある限
度以上の電圧または電流が印加されると静電容量が減少
したり破壊したりしてコンデンサとしての機能を果たさ
なくなる。
On the other hand, to remove these low-voltage noises and the like, the apparent dielectric constant is about 5 × 10 4 and tan δ is 1
% Of semiconductor capacitors are used. But,
When a voltage or current exceeding a certain limit is applied to such a semiconductor capacitor due to a surge or the like, the capacitance is reduced or destroyed, so that the semiconductor capacitor cannot function as a capacitor.

【0007】そこで最近になってSrTiO3を主成分
とし、バリスタ特性とコンデンサ特性の両方の特性を有
するものが開発され、コンピュータなどの電子機器にお
けるIC,LSIなどの半導体素子および回路の保護や
電子機器を相互に継ぐケーブルやコネクタなどから侵入
するノイズの除去に利用されている。
[0007] Therefore, recently, a device having SrTiO 3 as a main component and having both varistor characteristics and capacitor characteristics has been developed. It is used to remove noise that enters from cables and connectors that connect devices to each other.

【0008】以下にSrTiO3を主成分とするバリス
タとコンデンサの両方の特性を有する従来の電圧依存性
非直線抵抗体磁器素子について説明する。
A conventional voltage-dependent nonlinear resistor ceramic element having both characteristics of a varistor and a capacitor mainly composed of SrTiO 3 will be described below.

【0009】図3に示すように、コネクタなどから侵入
するノイズの除去に使用する電圧依存性非直線抵抗体磁
器素子10は、SrTiO3を主成分とした電圧依存性
非直線抵抗特性を有する半導体セラミックからなる円筒
形の素子11の上面と下面に電極12と電極13を配設
したものである。
As shown in FIG. 3, a voltage-dependent nonlinear resistor porcelain element 10 used for removing noise entering from a connector or the like is a semiconductor having a voltage-dependent nonlinear resistance characteristic mainly composed of SrTiO 3. An electrode 12 and an electrode 13 are provided on the upper and lower surfaces of a cylindrical element 11 made of ceramic.

【0010】図4に示すように、電圧依存性非直線抵抗
体磁器素子10をコネクタに組み込むとき、導電性接着
剤16および17でピン15と素子11の電極12およ
び共通端子14と素子11の電極13をそれぞれ接着す
る。このとき、ピン15と素子11の隙間に導電性接着
剤16の一部が流れ込むことがある。
As shown in FIG. 4, when the voltage-dependent nonlinear resistor porcelain element 10 is incorporated in a connector, the pins 15 and the electrodes 12 of the element 11 and the common terminals 14 and The electrodes 13 are respectively bonded. At this time, a part of the conductive adhesive 16 may flow into the gap between the pin 15 and the element 11.

【0011】[0011]

【発明が解決しようとする課題】上述のように従来の構
成では、ピン15と素子11の隙間に導電性接着剤16
の一部が流れ込み、見掛け上の電極間距離が小さくな
り、バリスタ電圧が低くなり、バリスタ電圧に極性がつ
き、絶縁抵抗が低くなるという問題点を有していた。
As described above, in the conventional configuration, the conductive adhesive 16 is provided in the gap between the pin 15 and the element 11.
Has a problem that the apparent distance between the electrodes decreases, the varistor voltage decreases, the varistor voltage becomes polar, and the insulation resistance decreases.

【0012】本発明は、上記従来の問題点を解決するも
のでピンと端子の隙間に導電性接着剤の一部が流れ込ん
でも、バリスタ電圧が変化せず、バリスタ電圧に極性が
つかず、絶縁抵抗が変化しない電圧依存性非直線抵抗体
磁器素子を提供することを目的とする。
The present invention solves the above-mentioned conventional problems. Even if a part of the conductive adhesive flows into the gap between the pin and the terminal, the varistor voltage does not change, the varistor voltage does not have polarity, and the insulation resistance does not change. It is an object of the present invention to provide a voltage-dependent nonlinear resistor porcelain element in which the voltage does not change.

【0013】[0013]

【課題を解決するための手段】この目的を達成するため
に本発明の電圧依存性非直線抵抗体磁器素子は、中心部
に円筒状の貫通孔と同軸上で外周径が異なる2つの円筒
とその2つの円筒の境界平面とを有し、かつ、前記円
筒の大きい径の方の長さが小さい径の方の長さよりも短
い形状でSrTiO 3 を主成分とした電圧依存性非直線
抵抗特性を有する半導体セラミックと、この半導体セラ
ミックの前記貫通孔の内周全面に配設した内周電極と、
前記小さい径の円筒の端面から所定の寸法だけ除いた外
周面と前記境界の平面とに配設した電極と、前記境界平
面上に配設すると共に前記外周全面に配設した電極と導
電性接着剤を用いて電気的に接続される共通端子と、前
記貫通孔を貫通させて導電性接着剤により前記内周全面
に設けた電極と電気的に接続するピンとを備えたもので
ある。
In order to achieve this object, a voltage-dependent nonlinear resistor porcelain element according to the present invention comprises a cylindrical through-hole at the center and two coaxial cylinders having different outer diameters on the same axis. The plane of the boundary between the two cylinders and the circle
The length of the larger diameter of the cylinder is shorter than the length of the smaller diameter
Voltage-dependent non-linear shape mainly composed of SrTiO 3
A semiconductor ceramic having a resistance characteristic;
An inner circumferential electrode disposed on the entire inner circumferential surface of the through hole of Mick,
The outside of the small-diameter cylinder excluding a predetermined dimension from the end face
An electrode disposed on a peripheral surface and the plane of the boundary;
Electrodes and the electrodes arranged on the entire outer periphery.
A common terminal that is electrically connected using an electrically conductive adhesive;
Penetrate through the through-hole and use a conductive adhesive to cover the entire inner periphery.
And a pin that is electrically connected to the electrode provided in the above.

【0014】[0014]

【作用】この構成によると、半導体セラミックの内周全
面に配設した電極が一つの電極として一体化されている
ので、例えピンと半導体セラミックの隙間に導電性接着
剤が流れ込んだとしても電極間距離は変化しない。
た、半導体セラミックの小さい径の円筒外周面に設けた
電極と共通端子とを接続する際に、余分な導電性接着剤
のたれを大きい径の円筒で止めることができるので、電
極間距離は変化しないこととなる。仮に大きい径の円筒
の外周に導電性接着剤が垂れ込んだとしても外周面に設
けた電極から離れる方向に垂れ込むこととなるので見掛
けの電極間距離は変化しない。 また、全体が円筒形で一
方の端部が他方の端部より大きい径の円筒としているの
で、表面絶縁距離を広く取ることができる。 さらに共通
端子と、半導体セラミックの小さい径の円筒外周面に設
けた電極との接続が容易になるとともに接着強度も大き
くすることができる。 従ってバリスタ電圧が低くなった
り、極性が付いて絶縁抵抗が低くなるのを防止すること
ができ、課電寿命特性などの電気特性に優れた電圧依存
性非直線抵抗体磁器素子となる。
According to this structure, the entire inner circumference of the semiconductor ceramic is
The electrodes arranged on the surface are integrated as one electrode
So, for example, conductive adhesion in the gap between the pin and the semiconductor ceramic
Even if the agent flows, the distance between the electrodes does not change. Ma
Also, provided on the outer peripheral surface of a small diameter cylinder of semiconductor ceramic
When connecting the electrode and the common terminal, use extra conductive adhesive
The sag can be stopped by a large-diameter cylinder.
The distance between the poles will not change. A cylinder with a large diameter
Even if the conductive adhesive drips around the outer periphery of the
Because it will hang in the direction away from the electrode
The distance between the electrodes does not change. In addition, the whole is cylindrical
One end has a larger diameter than the other end.
Thus, the surface insulation distance can be widened. More common
Terminal and the outer peripheral surface of a small diameter cylinder of semiconductor ceramic.
Easier connection to girder electrodes and higher adhesive strength
Can be done. Therefore, the varistor voltage has decreased
To prevent insulation resistance from becoming low due to polarity.
Voltage dependence with excellent electrical characteristics such as charging life characteristics
Becomes a non-linear resistor ceramic element.

【0015】[0015]

【実施例】【Example】

(実施例1)以下本発明の第1の実施例について説明す
る。
(Embodiment 1) Hereinafter, a first embodiment of the present invention will be described.

【0016】SrCO3、CaCO3、BaCO3、Mg
CO3、TiO2を下記の(表1)に示すように組成比を
種々変えて秤量し、ボールミルなどで24時間混合す
る。
SrCO 3 , CaCO 3 , BaCO 3 , Mg
CO 3 and TiO 2 are weighed at various composition ratios as shown in the following (Table 1), and mixed by a ball mill or the like for 24 hours.

【0017】[0017]

【表1】 [Table 1]

【0018】次に、乾燥した後、1050℃で4時間焼
成し、再びボールミルなどで24時間粉砕した後、乾燥
し第1成分とする。次に、第1成分、第2成分、第3成
分を(表1)に示した組成比になるように秤量し、ボー
ルミルなどで24時間混合した後、乾燥し、ポリビニル
アルコールなどの有機バインダーを10重量%添加して
造粒した後、1(ton/cm2)のプレス圧力で、円筒
の外周径が小さい部分は外径4mmφ、内径1.4mmφ、
高さ2.5mm、円筒の外周径が大きい部分は外径6mm
φ、内径1.4mmφ、高さ0.5mmの円筒状に成形し、
空気中で1200℃で10時間焼成し脱バインダーす
る。次に、還元性雰囲気たとえばN2:H2=9:1のガ
ス中で1425℃で5時間焼成する。さらにその後、酸
化性雰囲気例えば空気中で1120℃で5時間焼成す
る。こうして得られた素子の内周面にZnなどからなる
導電性オーミックペーストを例えばローラー転写などの
方法により配設した電極を設け、外周径が小さい円筒の
端面から所定の寸法を除いた外周面にZnなどからなる
導電性オーミックペーストを例えばローラー転写などの
方法により配設し、かつ、大きい径の円筒が外周径が小
さい円筒に接する平面にZnなどからなる導電性オーミ
ックペーストを例えばローラー転写などの方法により配
設した別の電極を設ける。その後120℃で10分間乾
燥させ、さらにその上から非オーミック性の導電性ペー
ストを同様にしてローラー転写などの方法により設け、
120℃で10分間乾燥させ、630℃で3分間焼成
し、図1に示すように、素子3に電極1と電極2を配設
した電圧依存性非直線抵抗体磁器素子4を形成する。
Next, after being dried, it is baked at 1050 ° C. for 4 hours, crushed again by a ball mill or the like for 24 hours, and dried to obtain a first component. Next, the first component, the second component, and the third component are weighed so as to have the composition ratios shown in (Table 1), mixed for 24 hours in a ball mill or the like, dried, and then dried with an organic binder such as polyvinyl alcohol. After adding 10% by weight and granulating, under a pressing pressure of 1 (ton / cm 2 ), the portion having a small outer diameter of the cylinder has an outer diameter of 4 mmφ, an inner diameter of 1.4 mmφ,
2.5mm height, 6mm outer diameter at the part where the outer diameter of the cylinder is large
φ, inner diameter 1.4mmφ, height 0.5mm into a cylindrical shape,
It is calcined at 1200 ° C. for 10 hours in air to remove the binder. Next, firing is performed at 1425 ° C. for 5 hours in a reducing atmosphere, for example, a gas of N 2 : H 2 = 9: 1. After that, firing is performed at 1120 ° C. for 5 hours in an oxidizing atmosphere such as air. An electrode in which a conductive ohmic paste made of Zn or the like is disposed on the inner peripheral surface of the element thus obtained by, for example, a roller transfer method, is provided on an outer peripheral surface obtained by removing a predetermined dimension from an end surface of a cylinder having a small outer peripheral diameter. A conductive ohmic paste made of Zn or the like is disposed by a method such as roller transfer, and a conductive ohmic paste made of Zn or the like is placed on a plane where a large-diameter cylinder is in contact with a small-diameter outer cylinder, for example, by roller transfer. Another electrode provided by the method is provided. Thereafter, dried at 120 ° C. for 10 minutes, and a non-ohmic conductive paste is further provided thereon by a method such as roller transfer in the same manner,
After drying at 120 ° C. for 10 minutes and baking at 630 ° C. for 3 minutes, as shown in FIG. 1, a voltage-dependent nonlinear resistor porcelain element 4 in which an electrode 1 and an electrode 2 are arranged on an element 3 is formed.

【0019】次に、図2に示すように電圧依存性非直線
抵抗体磁器素子4に半田などの導電性接着剤5,8によ
りピン6および共通端子9を取り付け、ブタジエンゴム
などの樹脂(図示せず)を充填し、加熱硬化する。
Next, as shown in FIG. 2, the pin 6 and the common terminal 9 are attached to the voltage-dependent non-linear resistor ceramic element 4 with conductive adhesives 5 and 8 such as solder, and a resin such as butadiene rubber (see FIG. 2). (Not shown) and cured by heating.

【0020】(実施例2)第1の実施例と同様にして得
た素子の内周面にZnなどからなる導電性オーミックペ
ーストを例えばローラー転写などの方法により配設し、
外周径が小さい円筒の端面から所定の寸法を除いた外周
面にZnなどからなる導電性オーミックペーストを例え
ばローラー転写などの方法により配設し、さらに大きい
径の円筒が外周径が小さい円筒に接する平面にZnなど
からなる導電性オーミックペーストを例えばローラー転
写などの方法により他の電極として配設した後、120
℃で10分間乾燥させ、630℃で3分間焼成する。
(Embodiment 2) A conductive ohmic paste made of Zn or the like is provided on the inner peripheral surface of the element obtained in the same manner as in the first embodiment, for example, by a method such as roller transfer.
A conductive ohmic paste made of Zn or the like is disposed on the outer peripheral surface of the cylinder having a smaller outer diameter except for a predetermined dimension from an end surface thereof by, for example, a roller transfer method, and a cylinder having a larger diameter contacts a cylinder having a smaller outer diameter. After a conductive ohmic paste made of Zn or the like is provided as another electrode on a plane by a method such as roller transfer, for example, 120
Dry at 10 ° C. for 10 minutes and bake at 630 ° C. for 3 minutes.

【0021】次に、弱酸などにより導電部分を活性化
し、無電解により活性化した部分にのみCuめっき、N
iめっきを施し、さらにその上に電解半田めっきをし、
三層構造にした電極1と電極2とする。次に、図2に示
した第1の実施例と同様に半田などの導電性接着剤5,
8によりピン6および共通端子9を取り付け、ブタジエ
ンゴムなどの樹脂を充填し、加熱硬化する。このように
して得られた電圧依存性非直線抵抗体磁器素子の素子単
品とコネクタ組み立て後の電気特性をそれぞれ(表2)
と(表3)に示す。
Next, the conductive portion is activated with a weak acid or the like, and Cu plating, N
i-plating, then electrolytic solder plating on it,
The electrodes 1 and 2 have a three-layer structure. Next, similarly to the first embodiment shown in FIG.
The pin 6 and the common terminal 9 are attached by 8 and filled with a resin such as butadiene rubber and cured by heating. The electrical characteristics of the voltage-dependent nonlinear resistor porcelain element thus obtained and the electrical characteristics after assembling the connector are shown in Table 2 respectively.
And (Table 3).

【0022】[0022]

【表2】 [Table 2]

【0023】[0023]

【表3】 [Table 3]

【0024】(表2)および(表3)のV1mAは、1m
Aの電流を流したときに素子の両端にかかる電圧であ
り、V1mAの極性は、正方向のV1mAと負方向のV1mA
の差を正方向のV1mAで割った値であり、絶縁抵抗は、
印加電圧12VDCのときのピン6と共通端子9の間の
絶縁抵抗値である。この(表2),(表3)から明らか
なように、本実施例による電圧依存性非直線抵抗体磁器
素子は、V1mAの極性および絶縁抵抗の点で従来例に比
して優れた効果が得られる。
V 1mA in Tables 2 and 3 is 1 m
A voltage across the element when current flows in the A, the polarity of V 1mA is the positive direction of V 1mA and the negative direction of the V 1mA
Is the value obtained by dividing the difference by 1 V in the positive direction.
This is the insulation resistance value between the pin 6 and the common terminal 9 when the applied voltage is 12 VDC. As is clear from Tables 2 and 3, the voltage-dependent nonlinear resistor porcelain element according to the present embodiment is superior to the conventional example in terms of the polarity of V1 mA and the insulation resistance. Is obtained.

【0025】また第1成分のSrの一部をCa,Ba,
Mgで置換する場合は実施例では一部しか示さなかった
が、素子の特性としてバリスタ特性とコンデンサ特性を
同時に持つ範囲内であればどのようなものであってもか
まわない。また第2成分、第3成分は実施例では一部の
組み合わせについてのみ示したが素子の特性としてバリ
スタ特性とコンデンサ特性を同時に持つ範囲内であれば
どのような成分であってもかまわない。また、オーミッ
ク性の電極としてはZn以外にAg、Cu、Niなどが
あるが、これら以外でも素子と電極との界面でオーミッ
ク接続がとれるものであればどのようなものであっても
かまわない。また、めっきの成分およびその組み合わせ
については一部についてのみ示したが、同様の効果が得
られるものであればどのような組み合わせでもかまわな
い。めっきする方法は電解でも無電解でもかまわない
し、酸性めっきでも塩基性めっきでも中性めっきでもか
まわない。また電圧依存性非直線抵抗体磁器素子に例え
ばフェライト、コイル、トロイダルコイルなどからなる
インダクタンスを接続する構成にし、ノイズ除去効果を
改善することができる。
A part of the first component Sr is Ca, Ba,
In the case of substituting with Mg, only a part is shown in the embodiment, but any element may be used as long as the element has a varistor characteristic and a capacitor characteristic at the same time. In the embodiment, the second component and the third component are shown only for some combinations. However, any components may be used as long as the components have a varistor characteristic and a capacitor characteristic at the same time. As the ohmic electrode, there are Ag, Cu, Ni, etc. other than Zn, but any other electrode may be used as long as an ohmic connection can be established at the interface between the element and the electrode. Although only some of the plating components and their combinations are shown, any combination may be used as long as the same effects can be obtained. The plating method may be electrolytic or electroless, and may be acidic plating, basic plating, or neutral plating. Further, a configuration in which an inductance made of, for example, a ferrite, a coil, a toroidal coil, or the like is connected to the voltage-dependent nonlinear resistor porcelain element can improve the noise removal effect.

【0026】以上のように実施例によれば、全体が円筒
形で円筒の一方の端部が他の部分より大きい径の円筒状
をなし、大きい径の円筒の長さが小さい径の円筒の長さ
よりも短く、全体の円筒の中心部に円筒状の貫通孔を有
するように形成し、貫通孔の内周面全体に電極1を配設
し、外周径が小さい円筒の端面より所定の寸法だけ除い
た外周面と大きい径の円筒と小さい径の円筒が接する境
界の平面に電極2を配設することにより、円筒の内周の
電極1が一つの電極として一体化されるため、ピン6と
素子3の隙間に半田などの導電性接着剤5が流れ込んで
も一体化された電極1の上であるため、見掛けの電極間
距離は変化しない。したがって電気的特性は安定で、バ
リスタ電圧は変化せず、バリスタ電圧に極性はつかず、
絶縁抵抗は変化しない。
As described above, according to the embodiment, the entire cylinder is cylindrical, and one end of the cylinder has a cylindrical shape with a diameter larger than that of the other portion, and the length of the large-diameter cylinder is small. It is shorter than the length, is formed so as to have a cylindrical through hole at the center of the entire cylinder, and the electrode 1 is disposed on the entire inner peripheral surface of the through hole. By arranging the electrode 2 on the plane of the boundary where the outer peripheral surface, the large-diameter cylinder and the small-diameter cylinder contact each other, the electrode 1 on the inner circumference of the cylinder is integrated as one electrode. Even if the conductive adhesive 5 such as solder flows into the gap between the electrode 3 and the element 3, the apparent distance between the electrodes does not change because it is on the integrated electrode 1. Therefore, the electrical characteristics are stable, the varistor voltage does not change, the varistor voltage has no polarity,
The insulation resistance does not change.

【0027】また、電極1と電極2との表面空間絶縁距
離を大きくしているので、電気的特性はさらに安定して
いる。
Further, since the surface space insulation distance between the electrode 1 and the electrode 2 is increased, the electrical characteristics are more stable.

【0028】さらに、共通端子9を電極2に導電性接着
剤8で接続するとき、接触する面積が大きくなり接続が
容易で、共通端子9の上下二方向から接続することがで
きるため共通端子9と素子3の間の接着力を強くするこ
とができ、機械的強度を向上させることができるととも
に、とくに温度サイクル試験による特性の劣化を小さく
することができ、信頼性を向上させることができる。ま
た、余分な半田などの導電性接着剤8のたれが生じても
大きい径の円筒の部分で止めることにより、見掛けの電
極間距離は変化しないようにすることができる。また大
きい径の円筒の外周に半田などの導電性接着剤8がたれ
込んでも電極1から離れる方向にたれ込むことから、見
掛けの電極間距離は変化しない。また全体が円筒形で円
筒の一方の端部が他の部分より大きい径の円筒としてい
るので、表面絶縁距離を広くとることができるため電気
的特性は安定で、バリスタ電圧は変化せず、バリスタ電
圧に極性はつかず、絶縁抵抗は変化せず、素子をコネク
タに組み立てても組み立て前後の特性の変化は極めて小
さく安定になるという効果が得られ、課電寿命特性を改
善することができ、信頼性を向上させることができる。
また電極1、電極2、共通端子9の最上層を半田めっき
にすることにより、例えばピン6と電極1の隙間や電極
2と共通端子9の隙間を小さくしておけば、導電性接着
剤8がなくても加熱処理するだけで電極1、電極2、共
通端子9の最上層の半田めっきが互いに溶融して接続さ
せることができる。また素子3の電気的特性を十分に引
き出すためにはCuめっき、Niめっき、Crめっき、
Snめっき、Pbめっき、Auめっき、Agめっき、P
dめっき、半田めっきのうち一つまたは複数の種類を重
ねた電極とすることにより、素子と電極の界面にバリヤ
ーを形成することなく素子の電気的特性を十分に引き出
すことができ、容易に半田付けでき、複数の種類の多層
めっき構造にすることにより、半田耐熱性を向上させる
ことができる。
Further, when the common terminal 9 is connected to the electrode 2 with the conductive adhesive 8, the contact area becomes large, the connection is easy, and the common terminal 9 can be connected from the upper and lower directions. It is possible to increase the adhesive strength between the element 3 and the element 3, improve the mechanical strength, reduce the deterioration of characteristics due to a temperature cycle test, and improve the reliability. In addition, even if the conductive adhesive 8 such as excess solder is dripped, the apparent distance between the electrodes can be kept unchanged by stopping at the large-diameter cylindrical portion. In addition, even if the conductive adhesive 8 such as solder spills on the outer periphery of the cylinder having a large diameter, it spills away from the electrode 1, so that the apparent distance between the electrodes does not change. Also, since the whole is cylindrical and one end of the cylinder is larger in diameter than the other parts, the surface insulation distance can be widened, so the electrical characteristics are stable, the varistor voltage does not change, and the varistor does not change. The polarity is not applied to the voltage, the insulation resistance does not change, and even if the element is assembled into a connector, the effect that the change in characteristics before and after assembling is extremely small and the effect is stabilized, and the application life characteristic can be improved, Reliability can be improved.
By forming the uppermost layer of the electrodes 1, 2 and the common terminal 9 by solder plating, for example, if the gap between the pin 6 and the electrode 1 or the gap between the electrode 2 and the common terminal 9 is reduced, the conductive adhesive 8 The solder plating of the uppermost layers of the electrode 1, the electrode 2, and the common terminal 9 can be melted and connected to each other only by performing the heat treatment even if there is no heat treatment. In order to sufficiently bring out the electrical characteristics of the element 3, Cu plating, Ni plating, Cr plating,
Sn plating, Pb plating, Au plating, Ag plating, P
By using an electrode in which one or more of d-plating and solder plating are stacked, the electrical characteristics of the element can be sufficiently brought out without forming a barrier at the interface between the element and the electrode, and the soldering can be easily performed. By using a plurality of types of multilayer plating structures, solder heat resistance can be improved.

【0029】また、素子の形状を円筒状にすることによ
り素子の長さは長くなるが、素子の半径方向には寸法を
小さくできるため、コネクタのピン間隔を小さくするこ
とが可能で、コネクタを小型化するのに有効である。
Although the length of the element is increased by making the element a cylindrical shape, the dimension of the element in the radial direction can be reduced, so that the pin interval of the connector can be reduced. It is effective for downsizing.

【0030】[0030]

【発明の効果】以上本発明によると、半導体セラミック
の内周全面に配設した電極が一つの電極として一体化さ
れているので、例えピンと半導体セラミックの隙間に導
電性接着剤が流れ込んだとしても電極間距離は変化しな
い。 また、半導体セラミックの小さい径の円筒外周面に
設けた電極と共通端子とを接続する際に、余分な導電性
接着剤のたれを大きい径の円筒で止めることができるの
で、電極間距離は変化しないこととなる。仮に大きい径
の円筒の外周に導電性接着剤が垂れ込んだとしても外周
面に設けた電極から離れる方向に垂れ込むこととなるの
で見掛けの電極間距離は変化しない。 また全体が円筒形
で一方の端部が他方の端部より大きい径の円筒としてい
るので、表面絶縁距離を広く取ることができる。 さらに
共通端子と、半導体セラミックの小さい径の円筒外周面
に設けた電極との接続が容易になるとともに接着強度も
大きくすることができる。 従ってバリスタ電圧が低くな
ったり、極性が付いて絶縁抵抗が低くなるのを防止する
ことができ、課電寿命特性などの電気特性に優れた電圧
依存性非直線抵抗体磁器素子となる。
According to the present invention, the semiconductor ceramic
The electrodes arranged on the entire inner circumference of the
Are inserted in the gap between the pin and the semiconductor ceramic.
Even if the conductive adhesive flows in, the distance between the electrodes does not change.
No. Also, on the outer peripheral surface of a small diameter cylinder of semiconductor ceramic
When connecting the provided electrode to the common terminal,
You can stop the dripping of the adhesive with a large diameter cylinder
Thus, the distance between the electrodes does not change. Temporarily large diameter
Even if the conductive adhesive drips around the outer circumference of the cylinder
Will hang down in the direction away from the electrodes on the surface.
Thus, the apparent distance between the electrodes does not change. The whole is cylindrical
And one end of the cylinder is larger in diameter than the other end.
Therefore, the surface insulation distance can be widened. further
Common terminal and outer peripheral surface of small diameter cylinder of semiconductor ceramic
Connection with the electrode provided on
Can be bigger. Therefore, the varistor voltage is low.
To prevent insulation resistance from becoming low due to
Can be a voltage with excellent electrical characteristics such as charging life characteristics
It becomes a dependent nonlinear resistor porcelain element.

【図面の簡単な説明】[Brief description of the drawings]

【図1】本発明の一実施例の電圧依存性非直線抵抗体磁
器素子の断面図
FIG. 1 is a sectional view of a voltage-dependent nonlinear resistor porcelain element according to an embodiment of the present invention.

【図2】同電圧依存性非直線抵抗体磁器素子をコネクタ
に接続したときの断面略図
FIG. 2 is a schematic sectional view when the voltage-dependent nonlinear resistor porcelain element is connected to a connector.

【図3】従来の電圧依存性非直線抵抗体磁器素子の断面
FIG. 3 is a cross-sectional view of a conventional voltage-dependent nonlinear resistor porcelain element.

【図4】同電圧依存性非直線抵抗体磁器素子をコネクタ
に接続したときの断面略図
FIG. 4 is a schematic cross-sectional view when the voltage-dependent nonlinear resistor porcelain element is connected to a connector.

【符号の説明】[Explanation of symbols]

1 電極 2 電極 3 素子 1 electrode 2 electrodes 3 elements

Claims (1)

(57)【特許請求の範囲】(57) [Claims] 【請求項1】 中心部に円筒状の貫通孔と同軸上で外周
径が異なる2つの円筒とその2つの円筒の境界の平面と
を有し、かつ、前記円筒の大きい径の方の長さが小さい
径の方の長さよりも短い形状でSrTiO3を主成分と
した電圧依存性非直線抵抗特性を有する半導体セラミッ
と、この半導体セラミックの前記貫通孔の内周全面に
配設した電極と、前記小さい径の円筒の端面から所定の
寸法だけ除いた外周面と前記境界の平面とに配設した電
極と、前記境界平面上に配設すると共に前記外周全面に
配設した電極と導電性接着剤を用いて電気的に接続され
る共通端子と、前記貫通孔を貫通させて導電性接着剤に
より前記内周全面に設けた電極と電気的に接続するピン
とを備えた電圧依存性非直線抵抗体磁器素子。
At the center, there are two cylindrical cylinders having different outer diameters coaxially with a cylindrical through hole at the center and a plane at the boundary between the two cylinders, and the length of the larger diameter of the cylinder a semiconductor ceramic having a voltage-dependent nonlinear resistance characteristics mainly composed of SrTiO 3 in a shorter form than the length in the direction of smaller diameter, the electrode disposed on the inner peripheral entire surface of the through-hole of the semiconductor ceramic, Electrodes disposed on an outer peripheral surface obtained by removing a predetermined dimension from an end surface of the small diameter cylinder and the plane of the boundary, and disposed on the boundary plane and over the entire outer peripheral surface.
It is electrically connected to the arranged electrodes using conductive adhesive.
Common terminal and a conductive adhesive through the through hole.
More electrically connected to an electrode provided on the entire inner circumference
And a voltage-dependent non-linear resistor porcelain element.
JP4050310A 1992-03-09 1992-03-09 Voltage-dependent nonlinear resistor porcelain element Expired - Fee Related JP3003362B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4050310A JP3003362B2 (en) 1992-03-09 1992-03-09 Voltage-dependent nonlinear resistor porcelain element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4050310A JP3003362B2 (en) 1992-03-09 1992-03-09 Voltage-dependent nonlinear resistor porcelain element

Publications (2)

Publication Number Publication Date
JPH05251217A JPH05251217A (en) 1993-09-28
JP3003362B2 true JP3003362B2 (en) 2000-01-24

Family

ID=12855322

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4050310A Expired - Fee Related JP3003362B2 (en) 1992-03-09 1992-03-09 Voltage-dependent nonlinear resistor porcelain element

Country Status (1)

Country Link
JP (1) JP3003362B2 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108597702A (en) * 2018-05-24 2018-09-28 广州供电局有限公司 Overvoltage protection device

Also Published As

Publication number Publication date
JPH05251217A (en) 1993-09-28

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