JPH0442502A - Voltage dependent nonlinear resistance porcelain element - Google Patents

Voltage dependent nonlinear resistance porcelain element

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Publication number
JPH0442502A
JPH0442502A JP2150925A JP15092590A JPH0442502A JP H0442502 A JPH0442502 A JP H0442502A JP 2150925 A JP2150925 A JP 2150925A JP 15092590 A JP15092590 A JP 15092590A JP H0442502 A JPH0442502 A JP H0442502A
Authority
JP
Japan
Prior art keywords
plating
electrode
cylinder
hole
electrodes
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2150925A
Other languages
Japanese (ja)
Inventor
Keiichi Noi
野井 慶一
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP2150925A priority Critical patent/JPH0442502A/en
Publication of JPH0442502A publication Critical patent/JPH0442502A/en
Pending legal-status Critical Current

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Abstract

PURPOSE:To obtain an element which as a good soldering property and a superior resistance to beat in soldering by a method wherein a doughnut-form electrode having the same inner diameter as a through-hole is formed on one end plane of a semiconductor ceramic cylinder is formed and it is united into one body with an electrode of an inner circumferential plane of the hole and counter electrode is arranged on an outer circumferential plane on another end plane side at a distance from the end plane, so that a varistor voltage does not change even if a part of solder flows into a gap between a pin and an element. CONSTITUTION:On one end plane of a cylindrical sintered body composed of SrCo3, CaCo3, BaCO3, MgCO3 and TiO2, a doughnut-form electrode whose diameter is smaller than an outer diameter of a cylinder and whose inner diameter is the same as a through-hole is formed by using a conductive paste, and an electrode is arranged on an inner circumferential plane of the hole and these electrodes are united into one body to from a fundamental elec trode 1. On another end plane side of the cylinder, a counter electrode is arranged to form a fundamental electrode 3, followed by sintering. Next, on these fundamental electrodes 1 and 3, surface electrodes 2 and 4 composed of a triple-layer structure of Cu-plating/Ni-plat- ing/solder plating are formed by a non-electrolytic activating plating, thereby obtaining an element 5. The electrical characteristics are stable and a varistor voltage has no polarity, so that a change in the characteristics between before and after an assembly is extremely small and the characteristics are stable.

Description

【発明の詳細な説明】 産業上の利用分野 本発明は電気機器、電子機器で発生する巽常高電圧、ノ
イズ、静電気なとから機器の半導体及び回路を保護する
ためのコンデンサ特性とバリスタ特性ををする電圧依存
性非直線抵抗体磁器素子に関するものである。
[Detailed Description of the Invention] Industrial Application Field The present invention relates to capacitor characteristics and varistor characteristics for protecting semiconductors and circuits of electrical equipment and electronic equipment from normal high voltage, noise, and static electricity. The present invention relates to a voltage-dependent nonlinear resistance ceramic element.

従来の技術 従来、各種の電気機器、電子機器における異常高電圧の
吸収、ノイズの除去、火花消去、静電気対策のために電
圧依存性非直線抵抗特性を有するSiCバリスタや、z
nO系バリスタなとが使用されている。このようなバリ
スタの電圧−電流特性は近似的に次式のように表すこと
ができる。
Conventional technology Conventionally, SiC varistors with voltage-dependent nonlinear resistance characteristics have been used to absorb abnormally high voltages, remove noise, eliminate sparks, and counter static electricity in various electrical and electronic devices.
An nO type varistor is used. The voltage-current characteristics of such a varistor can be approximately expressed as in the following equation.

I=(V/C)・ ここで、■は電流、■は電圧、Cはバリスタ固有の定数
、αは電圧−電流非直線指数である。
I=(V/C)· Here, ■ is current, ■ is voltage, C is a constant specific to the varistor, and α is a voltage-current nonlinear index.

SiCバリスタのαは2〜7程度、ZnO系バリスタで
はαが50にもおよぶものがある。このようなバリスタ
は比較的高い電圧の吸収には優れた性能を有しているが
、誘電率か低く、画有の静電容量が小さいため、バリス
タ電圧以下の比較的低い電圧の吸収にはほとんと効果を
示さず、また誘電損失tanδが5〜10%と大きい。
The α of SiC varistors is about 2 to 7, and the α of some ZnO-based varistors is as high as 50. Although such varistors have excellent performance in absorbing relatively high voltages, their low dielectric constant and small capacitance make them difficult to absorb relatively low voltages below the varistor voltage. It shows almost no effect, and the dielectric loss tan δ is as large as 5 to 10%.

一方、これらの低電圧のノイズなどの除去には見掛は上
の誘電率が5X104程度で、tanδが1%前後の半
導体コンデンサが利用されている。しかし、このような
半導体コンデンサはサージなどによりある限度以上の電
圧または電流が印加されると、静電容量が減少したり破
壊したりしてコンデンサとしての機能を果たさなくなっ
たりする。
On the other hand, semiconductor capacitors with an apparent dielectric constant of about 5×10 4 and a tan δ of about 1% are used to remove these low voltage noises. However, when a voltage or current exceeding a certain limit is applied to such a semiconductor capacitor due to a surge or the like, the capacitance decreases or breaks down, and the capacitor no longer functions as a capacitor.

そこで最近になって5rTiO+を主成分とし、バリス
タ特性とコンデンサ特性の両方の機能を有するものが開
発され、コンビ二一夕などの電子機器におけるIC,L
SIなどの半導体素子及び回路の保護や、電子機器を相
互に継ぐ¥−プルやコネクタなどから侵入するノイズの
除去に利用されている。
Recently, products containing 5rTiO+ as the main component and having both varistor and capacitor properties have been developed, and ICs and L
It is used to protect semiconductor elements and circuits such as SI, and to remove noise that enters from the pulls and connectors that interconnect electronic devices.

発明が解決しようとする課題 前記のS r T i 03を主成分とするバリスタと
コンデンサの両方の機能を有する素子をコネクタなどか
ら侵入するノイズの除去に使用する場合、素子の構成は
一般的に第3図のようになっている。第3図において、
15及び16は電極、17は素子である。
Problems to be Solved by the Invention When an element having the functions of both a varistor and a capacitor, which mainly consists of S r T i 03, is used to remove noise that enters from a connector etc., the configuration of the element is generally as follows. It looks like Figure 3. In Figure 3,
15 and 16 are electrodes, and 17 is an element.

そして、このような素子をコネクタに組み込むと一般的
に第4図のようになる。ところが第4図のような構成に
すると、ピン18と素子22の隙間に半田19の一部が
流れ込み、見掛は上の電極間距離が小さくなり、バリス
タ電圧が低くなり、またバリスタ電圧に極性がつき、絶
縁抵抗が低くなるといった欠点を有していた。第4図に
おいて、20及び21は電極、23は半田、24は共通
端子である。
When such an element is incorporated into a connector, it generally becomes as shown in FIG. However, when the configuration shown in Fig. 4 is used, a portion of the solder 19 flows into the gap between the pin 18 and the element 22, and the distance between the upper electrodes appears to become smaller, lowering the varistor voltage and causing polarity in the varistor voltage. This has the disadvantage that the insulation resistance becomes low. In FIG. 4, 20 and 21 are electrodes, 23 is solder, and 24 is a common terminal.

そこで本発明では、ピンと素子の間の隙間に半田の一部
が流れ込んでもバリスタ電圧が変化せず、バリスタ電圧
に極性がつかす、絶縁抵抗か変化しない構成で、しかも
電極が形成しゃすく、半田付は性が良く、半田耐熱性に
優れた安価な素子を提供することを目的とするものであ
る。
Therefore, in the present invention, even if a part of the solder flows into the gap between the pin and the element, the varistor voltage does not change, the polarity of the varistor voltage changes, and the insulation resistance does not change. The purpose of this invention is to provide an inexpensive element that has good properties and excellent soldering heat resistance.

課題を解決するための手段 前記の問題点を解決するために本発明では、5rTi0
3を主成分とした電圧依存性非直線抵抗特性を有する半
導体セラミックを円筒の中央部に円筒状の貫通穴を有す
るように形成し、前記円筒の一方の端面に外周が前記円
筒の外径よりも小さく内周が前記貫通穴と同じ径のドー
ナツ状の電極を設けるとともに、前記貫通穴の内周面に
電極を設け、前記ドーナツ状の電極と前記貫通穴の内周
面の電極を一体化し、前記円筒の他方の端面側で前記円
筒の外周面上に端面より距離をあけて対向する電極を設
け、かっ、これらに使用する電極は下地がオーミック性
電極であり、上地がCuメッキ、Niメッキ、Crメッ
キ、Snメッキ。
Means for Solving the Problems In order to solve the above problems, in the present invention, 5rTi0
A semiconductor ceramic having a voltage-dependent non-linear resistance characteristic mainly composed of 3 is formed so as to have a cylindrical through hole in the center of the cylinder, and one end surface of the cylinder has an outer periphery smaller than the outer diameter of the cylinder. A donut-shaped electrode is provided that is small and has an inner circumference the same diameter as the through hole, and an electrode is provided on the inner circumferential surface of the through hole, and the donut-shaped electrode and the electrode on the inner circumferential surface of the through hole are integrated. , electrodes are provided on the outer peripheral surface of the cylinder on the other end surface side of the cylinder, facing each other at a distance from the end surface; Ni plating, Cr plating, Sn plating.

Pbメッキ、半田メッキ、Auメッキ、Agメッキ、P
dメッキのうちの一つまたは複数のメッキを重ねたこと
を特徴とする電圧依存性非直線抵抗体磁器素子を得るこ
とにより、問題を解決しようとするものである。
Pb plating, solder plating, Au plating, Ag plating, P
The present invention attempts to solve this problem by obtaining a voltage-dependent nonlinear resistance ceramic element characterized by overlapping one or more of the D platings.

作用 本発明の構成によれば、前記円筒の一方の端面に外周が
前記円筒の外径よりも小さく内周か前記貫通穴と同じ径
のドーナツ状の電極を設けるとともに、前記貫通穴の内
周面に電極を設け、前記ドーナツ状の電極と前記貫通穴
の内周面の電極を一体化し、前記円筒の他方の端面側で
前託円筒の外周面上に端面より距離をあけて対向する電
極を設けた構成にすることにより、前記円筒の一方の端
面と前記貫通穴の内周面か一つの電極として一体化され
るため、コネクタなどに組み込んだ際にピンと素子の隙
間に半田の一部が流れ込んでも体化された電極の上であ
るため、見掛は上の電極間距離は変化しない。従って、
電気的特性は安定でバリスタ電圧は変化せず、バリスタ
電圧に極性はつかず、絶縁抵抗は変化しないことになる
。また、前記円筒の他方の端面側で前記円筒の外周面上
に端面より距離をあけて対向する電極を設けることによ
り、電極間の表面絶縁距離を広くとることができるため
、課電寿命特性を改善することができ信頼性を高めるこ
とができる。さらに、電極としては素子の特性を十分に
引き8すために下地はオーミック性電極で上地はCuメ
ッキ、N1メッキ、Crメッキ、Snメッキ、Pdメッ
キ。
According to the configuration of the present invention, a donut-shaped electrode having an outer circumference smaller than the outer diameter of the cylinder and an inner circumference or the same diameter as the through hole is provided on one end surface of the cylinder, and the inner circumference of the through hole is An electrode is provided on the surface, the donut-shaped electrode and the electrode on the inner circumferential surface of the through hole are integrated, and the electrode is opposed to the outer circumferential surface of the predetermined cylinder at a distance from the end surface on the other end surface side of the cylinder. By adopting a configuration in which one end surface of the cylinder and the inner circumferential surface of the through hole are integrated as one electrode, some of the solder may be deposited in the gap between the pin and the element when it is assembled into a connector, etc. Even if it flows in, it is above the embodied electrode, so the apparent distance between the electrodes does not change. Therefore,
The electrical characteristics are stable, the varistor voltage does not change, the varistor voltage has no polarity, and the insulation resistance does not change. In addition, by providing opposing electrodes on the outer peripheral surface of the cylinder on the other end surface side of the cylinder at a distance from the end surface, the surface insulation distance between the electrodes can be widened, so that the energized life characteristics can be improved. can be improved and reliability can be increased. Furthermore, in order to fully enhance the characteristics of the element, the electrodes are ohmic electrodes and the upper layers are Cu plating, N1 plating, Cr plating, Sn plating, and Pd plating.

半田メッキ、Auメッキ、Agメッキ、Pdメッキのう
ちの一つまたは複数のメッキを重ねた構成にすることに
より、素子と電極の界面にバリヤーを形成することなく
素子の特性を十分に引き出すことができ、容易に半田付
けでき、かつ上地を複数のメッキの多層構造としている
ことにより半田耐熱性を向上させることができることと
なる。
By layering one or more of solder plating, Au plating, Ag plating, and Pd plating, it is possible to fully bring out the characteristics of the device without forming a barrier at the interface between the device and the electrode. It can be easily soldered, and the upper layer has a multilayer structure of a plurality of platings, so that the soldering heat resistance can be improved.

実施例 以下に実施例を挙げて本発明を具体的に説明する。Example The present invention will be specifically described below with reference to Examples.

まず、SrCO3,CaCO3,BaC0,iM g 
CO3,T i 02を下記の第1表に示すように組成
比を種々変えて秤量し、ホールミルなとて20Hr混合
する。次に、乾燥した後、1100°Cで3Hr焼成し
、再びボールミルなどで20Hr粉砕した後、乾燥し、
第1成分とする。次いて、第1成分、第2成分、第3成
分を下記の第1表に示した組成比になるように秤量し、
ボールミルなどで20Hr混合した後、乾燥し、ポリビ
ニルアルコールなどの有機バインダーを10wt%添加
して造粒した後、1 (t /cd)のプレス圧力で外
径4φ、内径1.4φ、高さ2.5t(岨)の円筒状に
成形し、空気中で1075℃で10Hr焼成し脱バイン
ダーする。次に、還元性雰囲気、例えばN2: H2=
9 : 1のガス中で1430℃で4Hr焼成する。さ
らにその後、酸化性雰囲気、例えば空気中で1035℃
で4Hr焼成する。
First, SrCO3, CaCO3, BaC0, iM g
CO3 and T i 02 were weighed at various composition ratios as shown in Table 1 below, and mixed in a whole mill for 20 hours. Next, after drying, it was baked at 1100°C for 3 hours, and then ground again for 20 hours using a ball mill, etc., and then dried.
Let it be the first component. Next, the first component, second component, and third component are weighed so that the composition ratios shown in Table 1 below are obtained,
After mixing for 20 hours using a ball mill, etc., drying, adding 10 wt% of an organic binder such as polyvinyl alcohol, and granulating it, press pressure of 1 (t/cd) to form particles with an outer diameter of 4φ, an inner diameter of 1.4φ, and a height of 2. It was formed into a cylindrical shape with a weight of .5 tons and baked in air at 1075°C for 10 hours to remove the binder. Next, a reducing atmosphere, for example N2: H2=
Calcinate in 9:1 gas at 1430°C for 4 hours. Furthermore, after that, the temperature is increased to 1035°C in an oxidizing atmosphere, e.g. air.
Bake for 4 hours.

こうして得ら゛れた焼結体の一方の端面に、オーミック
性のZnなどの導電性ペーストを用いて外周か前記円筒
の外径よりも小さく内周が貫通穴と同じ径のドーナツ状
の電極を例えばスクリーン印刷などにより設けるととも
に、前記貫通穴の内周面に電極を例えばローラー転写な
どの方法により設け、前記ドーナツ状の電極と前記貫通
穴の内周面の電極を一体化し、第1図に示すように下地
電極1を形成する。また、前記円筒の他方の端面側で前
記円筒の外周面上に端面より距離をあけて対向する電極
を例えばローラー転写などの方法で設け、下地電極3を
形成し、590℃、5m1nで焼成する。次に、下地電
極1.3上への無電解の活性化メッキによりCuメッキ
−N1メソキー半田メッキの三層構造の上地電極2.4
を形成し、素子5を得る。
On one end face of the sintered body obtained in this way, a donut-shaped electrode with an outer periphery smaller than the outer diameter of the cylinder and an inner periphery with the same diameter as the through hole is formed using a conductive paste such as ohmic Zn. is provided by, for example, screen printing, and an electrode is provided on the inner circumferential surface of the through hole by a method such as roller transfer, and the donut-shaped electrode and the electrode on the inner circumferential surface of the through hole are integrated. A base electrode 1 is formed as shown in FIG. Further, on the other end surface side of the cylinder, an electrode is provided on the outer circumferential surface of the cylinder, facing away from the end surface by a method such as roller transfer, to form a base electrode 3, and fired at 590° C. and 5 m1. . Next, an upper electrode 2.4 having a three-layer structure of Cu plating and N1 mesokey solder plating is applied to the lower electrode 1.3 by electroless activation plating.
is formed to obtain element 5.

そして、前記の素子5をコネクタに組み込む場合は、第
2図に示したように半田7.半田13などによりビン6
及び共通端子14を取り付け、フタジエンゴムなどの樹
脂(図示せず)で下地電極8.10及び上地電極9,1
1を設けた素子12の周囲などをモールドする。このよ
うにして得られた素子の特性を素子単品とコネクタ組み
立て後について下記の第2表に示す。
When incorporating the element 5 into a connector, solder 7. as shown in FIG. Bin 6 by solder 13 etc.
and the common terminal 14 are attached, and the base electrode 8.10 and the upper base electrode 9,1 are connected with resin such as phthalene rubber (not shown).
The periphery of the element 12 provided with 1 is molded. The characteristics of the element thus obtained are shown in Table 2 below for the element alone and after assembly of the connector.

なお、第2表においてV 1mAは1mAの電流を流し
た時に素子の両端にかかる電圧であり、Vl−の極性は
正方向のVlmAと負方向のV 1mAの差を正方向の
Vlm、Aで割った値であり、絶縁抵抗は印加電圧12
 V、 D、 Cの時のピン6と共通端子14の間の絶
縁抵抗値である。
In Table 2, V 1mA is the voltage applied to both ends of the element when a current of 1mA flows, and the polarity of Vl- is expressed as the difference between VlmA in the positive direction and V 1mA in the negative direction with Vlm, A in the positive direction. The insulation resistance is the applied voltage 12
This is the insulation resistance value between pin 6 and common terminal 14 at V, D, and C.

(以  下  余  白) ここで、第1成分のSrの一部をCa、BaMgで置換
する割合は実施例では一部しか示さなかったが、素子の
特性としてバリスタ特性とコンデンサ特性を同時に持つ
範囲内であればとのようなものであってもかまわない。
(Margins below) Here, although only a portion of the proportion of Sr in the first component to be replaced with Ca and BaMg was shown in the example, it is within the range where the element has both varistor and capacitor characteristics. It doesn't matter if it is something like ``to'' as long as it is inside.

また、第2成分第3成分は実施例では一部の組み合わせ
についてのみ示したが、素子の特性としてバリスタ特性
とコンデンサ特性を同時に持つものであればどのような
成分であってもかまわない。さらに、オーミック性の電
極としてはZn以外にAg、Cu。
Further, although only some combinations of the second and third components are shown in the embodiment, any component may be used as long as it has both varistor characteristics and capacitor characteristics as the element characteristics. Furthermore, in addition to Zn, Ag and Cu can be used as ohmic electrodes.

Niなどがあるが、これら以外でも素子との間でオーミ
ック接続がとれるものであればどのようなものであって
もかまわない。また、上地電極のメッキの種類は最上層
が半田付は可能なものであればどのようなものであって
もかまわないし、重ねるメッキの層数は一層以上であれ
ば何層であってもかまわない。さらにメッキの方法は電
解メッキでも無電解メッキでもかまわないし、酸性メッ
キでも塩基性メッキでも中性メッキでもかまわない。そ
して前記電圧依存性非直線抵抗体磁器素子に例えばフェ
ライト、コイル、トロイダルコイルなどからなるインダ
クタンスを接続する構成にし、ノイズ除去効果を改善す
ることができる。
Examples include Ni, but any material other than these may be used as long as it can establish an ohmic connection with the element. Furthermore, the type of plating for the upper electrode may be any type as long as the top layer can be soldered, and the number of layers of plating may be one or more. I don't mind. Further, the plating method may be electrolytic plating or electroless plating, acid plating, basic plating, or neutral plating. The noise removal effect can be improved by connecting an inductance made of, for example, a ferrite, a coil, a toroidal coil, etc. to the voltage-dependent nonlinear resistance ceramic element.

発明の効果 以上に示したように本発明によれば、前記円筒の一方の
端面に外周が前記円筒の外径よりも小さく内周が前記貫
通穴と同し径のドーナツ状の電極を設けるとともに、前
記貫通穴の内周面に電極を設け、前記ドーナツ状の電極
と前記貫通穴の内周面の電極を一体化し、前記円筒の他
方の端面側で前記円筒の外周面上に端面より距離をあけ
て対向する電極を設けた構成にすることにより、前記円
筒の一方の端面と前記貫通穴の内周面が一つの電極とし
て一体化されるため、コネクタなどに組み込んだ際にビ
ンと素子の隙間に半田の一部が流れ込んでも一体化され
た電極の上であるため、見掛は上の電極間距離は変化し
ない。従って、電気的特性は安定でバリスタ電圧は変化
せず、バリスタ電圧に極性はつかず、絶縁抵抗は変化せ
ず、素子をコネクタに組み立てても組み立て前後の特性
の変化は極めて小さく安定になるという効果か得られる
。また、前記円筒の他方の端面側で前記円筒の外周面上
に端面より距離をあけて対向する電極を設けることによ
り、電極間の表面絶縁距離を広くとることができるため
、課電寿命特性なとの信頼性を向上させることができる
。さらに、素子の形状を円筒状にすることにより素子の
長さは長くなるが、素子の半径方向には寸法を小さくで
きるため、コネクタのビン間隔を小さくすることが可能
で、コネクタを小型化するのに有効である。そして、素
子をコネクタなどに組み込む際に、前記共通端子の両面
から半田付けできるため、前記共通端子と素子との接着
力を強くすることができ、信頼性を向上させることがで
きる。また、前記共通端子を対向する電極の部分に接続
することにより、前記共通端子からはみでる高さを低く
することができる。そして、電極としては素子の特性を
十分に引き出すために、下地はオーミック性電極で上地
はCuメッキ、Niメッキ、CrメッキSnメッキ、P
bメッキ、半田メッキ、Auメッキ、Agメッキ、Pd
メッキのうちの一つまたは複数のメッキを重ねた構成に
することにより、素子と電極の界面にバリヤーを形成す
るこさなく素子の特性を十分に引き出すことができ、容
易に半田付けすることができると共に電極の半田耐熱性
を改善することができる。
Effects of the Invention As described above, according to the present invention, a donut-shaped electrode is provided on one end surface of the cylinder, and the outer circumference is smaller than the outer diameter of the cylinder and the inner circumference has the same diameter as the through hole. , an electrode is provided on the inner circumferential surface of the through hole, the donut-shaped electrode and the electrode on the inner circumferential surface of the through hole are integrated, and a distance from the end surface is formed on the outer circumferential surface of the cylinder on the other end surface side of the cylinder. By creating a structure in which electrodes are provided facing each other with a hole in between, one end surface of the cylinder and the inner circumferential surface of the through hole are integrated as one electrode, so that when assembled into a connector etc., the bottle and element Even if a part of the solder flows into the gap between the electrodes, the distance between the electrodes does not appear to change because the solder is on the integrated electrode. Therefore, the electrical characteristics are stable, the varistor voltage does not change, the varistor voltage has no polarity, the insulation resistance does not change, and even when the element is assembled into a connector, the change in characteristics before and after assembly is extremely small and stable. You can get some effect. In addition, by providing opposing electrodes on the outer peripheral surface of the cylinder on the other end surface side of the cylinder at a distance from the end surface, the surface insulation distance between the electrodes can be widened, so that the energized life characteristics can be improved. reliability can be improved. Furthermore, by making the element cylindrical, the length of the element becomes longer, but the dimensions of the element can be reduced in the radial direction, making it possible to reduce the interval between the bins of the connector, making the connector more compact. It is effective for When the element is assembled into a connector or the like, since the common terminal can be soldered from both sides, the adhesive force between the common terminal and the element can be strengthened, and reliability can be improved. Furthermore, by connecting the common terminal to opposing electrode portions, the height protruding from the common terminal can be reduced. In order to fully bring out the characteristics of the element, the electrode is an ohmic electrode, and the upper layer is Cu plating, Ni plating, Cr plating, Sn plating, P plating, etc.
b plating, solder plating, Au plating, Ag plating, Pd
By layering one or more of the platings, the characteristics of the element can be fully brought out without forming a barrier at the interface between the element and the electrode, and it can be easily soldered. At the same time, the soldering heat resistance of the electrode can be improved.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は本発明による素子を示す断面図、第2図は本発
明による素子をコネクタに組み立てた時の断面図、第3
図は従来例による素子を示す断面図、第4図は従来例に
よる素子をコネクタに組み立てた時の断面図である。 1.3.8.10・・・・・・下地電極、2,4.9゜
11・・・・・・上地電極、5,12・・・・・・本発
明による素子、6・・・・・・ビン、7.ユ3・・・・
・・半田、14・・・・・・共通端子。 代理人の氏名 弁理士 粟野垂平 はか1名第 図 第 図 第 図 !? 甚、Bi11y
Fig. 1 is a sectional view showing an element according to the present invention, Fig. 2 is a sectional view when the element according to the invention is assembled into a connector, and Fig. 3 is a sectional view showing an element according to the present invention.
The figure is a sectional view showing a conventional element, and FIG. 4 is a sectional view of the conventional element assembled into a connector. 1.3.8.10...Base electrode, 2,4.9°11...Top electrode, 5,12...Element according to the present invention, 6...・・・Bottle, 7. Yu3...
...Solder, 14...Common terminal. Name of agent: Patent attorney Takuhei Awano (1 person) ? Jin, Bi11y

Claims (2)

【特許請求の範囲】[Claims] (1)SrTiO_3を主成分とした電圧依存性非直線
抵抗特性を有する半導体セラミックを円筒の中央部に円
筒状の貫通穴を有するように形成し、前記円筒の一方の
端面に外周が前記円筒の外径よりも小さく内周が前記貫
通穴と同じ径のドーナツ状の電極を設けるとともに、前
記貫通穴の内周面に電極を設け、前記ドーナツ状の電極
と前記貫通穴の内周面の電極を一体化し、前記円筒の他
方の端面側で前記円筒の外周面上に端面より距離をあけ
て対向する電極を設け、かつ、これらに使用する電極は
下地がオーミック性電極であり、上地がCuメッキ,N
iメッキ,Crメッキ,Snメッキ,Pbメッキ,半田
メッキ,Auメッキ,Agメッキ,Pdメッキのうちの
一つまたは複数のメッキを重ねたことを特徴とする電圧
依存性非直線抵抗体磁器素子。
(1) A semiconductor ceramic mainly composed of SrTiO_3 and having voltage-dependent non-linear resistance characteristics is formed to have a cylindrical through hole in the center of the cylinder, and the outer periphery of the cylinder is formed on one end surface of the cylinder. A donut-shaped electrode smaller than the outer diameter and having an inner circumference the same diameter as the through-hole is provided, and an electrode is provided on the inner circumferential surface of the through-hole, and the donut-shaped electrode and the electrode on the inner circumferential surface of the through-hole are provided. are integrated, and electrodes are provided on the outer circumferential surface of the cylinder on the other end surface side of the cylinder to face each other at a distance from the end surface, and the electrodes used for these have an ohmic electrode as the base and an ohmic electrode as the top. Cu plating, N
A voltage-dependent nonlinear resistor ceramic element characterized by having one or more platings stacked among i plating, Cr plating, Sn plating, Pb plating, solder plating, Au plating, Ag plating, and Pd plating.
(2)主成分のSrの一部をCa,Ba,Mgのうちの
少なくとも一つ以上の元素で置換したことを特徴とする
請求項1記載の電圧依存性非直線抵抗体磁器素子。
(2) The voltage-dependent nonlinear resistance ceramic element according to claim 1, wherein a part of the main component Sr is replaced with at least one element selected from Ca, Ba, and Mg.
JP2150925A 1990-06-08 1990-06-08 Voltage dependent nonlinear resistance porcelain element Pending JPH0442502A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2150925A JPH0442502A (en) 1990-06-08 1990-06-08 Voltage dependent nonlinear resistance porcelain element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2150925A JPH0442502A (en) 1990-06-08 1990-06-08 Voltage dependent nonlinear resistance porcelain element

Publications (1)

Publication Number Publication Date
JPH0442502A true JPH0442502A (en) 1992-02-13

Family

ID=15507408

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2150925A Pending JPH0442502A (en) 1990-06-08 1990-06-08 Voltage dependent nonlinear resistance porcelain element

Country Status (1)

Country Link
JP (1) JPH0442502A (en)

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