JP3003359B2 - Voltage-dependent nonlinear resistor porcelain element - Google Patents
Voltage-dependent nonlinear resistor porcelain elementInfo
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- JP3003359B2 JP3003359B2 JP4046731A JP4673192A JP3003359B2 JP 3003359 B2 JP3003359 B2 JP 3003359B2 JP 4046731 A JP4046731 A JP 4046731A JP 4673192 A JP4673192 A JP 4673192A JP 3003359 B2 JP3003359 B2 JP 3003359B2
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- cylinder
- dependent nonlinear
- nonlinear resistor
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Description
【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION
【0001】[0001]
【産業上の利用分野】本発明は電気機器や電子機器で発
生する異常高電圧、ノイズ、静電気などから機器の半導
体および回路を保護するためのコンデンサ特性とバリス
タ特性を有する電圧依存性非直線抵抗体磁器素子に関す
る。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a voltage-dependent non-linear resistor having a capacitor characteristic and a varistor characteristic for protecting a semiconductor and a circuit of a device from abnormal high voltage, noise, static electricity, etc. generated in an electric device or an electronic device. It relates to a body porcelain element.
【0002】[0002]
【従来の技術】従来、各種の電気機器や電子機器におけ
る異常高電圧の吸収、ノイズの除去、火花消去および静
電気対策のために電圧依存性非直線抵抗特性を有するS
iCバリスタや、ZnO系バリスタなどが使用されてい
る。このようなバリスタの電圧−電流特性は近似的に次
式のように表すことができる。2. Description of the Related Art Conventionally, an S which has a voltage-dependent non-linear resistance characteristic for absorbing abnormal high voltage, eliminating noise, eliminating sparks, and taking measures against static electricity in various electric and electronic devices.
An iC varistor and a ZnO-based varistor are used. The voltage-current characteristics of such a varistor can be approximately expressed by the following equation.
【0003】[0003]
【数1】 (Equation 1)
【0004】ここで、Iは電流、Vは電圧、Cはバリス
タ固有の定数、αは電圧−電流非直線指数である。Here, I is a current, V is a voltage, C is a constant unique to a varistor, and α is a voltage-current nonlinear exponent.
【0005】SiCバリスタのαは2〜7で、ZnO系
バリスタではαが50にもおよぶものがある。このよう
なバリスタは比較的高い電圧の吸収には優れた性能を有
しているが、誘電率が低く、固有の静電容量が小さいた
めバリスタ電圧以下の比較的低い電圧の吸収にはほとん
ど効果を示さず、また誘電損失tanδが5〜10%と
大きい。[0005] α of a SiC varistor is 2 to 7, and α of some ZnO-based varistors reaches 50. Such varistors have excellent performance in absorbing relatively high voltage, but have little effect on absorbing relatively low voltage below varistor voltage due to low dielectric constant and small inherent capacitance. And the dielectric loss tan δ is as large as 5 to 10%.
【0006】一方、これらの低電圧のノイズなどの除去
には見かけの誘電率が5×104程度で、tanδが1
%前後の半導体コンデンサが利用されている。しかし、
このような半導体コンデンサはサージなどによりある限
度以上の電圧または電流が印加されると静電容量が減少
したり破壊したりしてコンデンサとしての機能を果たさ
なくなる。On the other hand, to remove these low-voltage noises and the like, the apparent dielectric constant is about 5 × 10 4 and tan δ is 1
% Of semiconductor capacitors are used. But,
When a voltage or current exceeding a certain limit is applied to such a semiconductor capacitor due to a surge or the like, the capacitance is reduced or destroyed, so that the semiconductor capacitor cannot function as a capacitor.
【0007】そこで最近になってSrTiO3を主成分
とし、バリスタ特性とコンデンサ特性の両方の特性を有
するものが開発され、コンピュータなどの電子機器にお
けるIC,LSIなどの半導体素子および回路の保護や
電子機器を相互に継ぐケーブルやコネクタなどから侵入
するノイズの除去に利用されている。[0007] Therefore, recently, a device having SrTiO 3 as a main component and having both varistor characteristics and capacitor characteristics has been developed. It is used to remove noise that enters from cables and connectors that connect devices to each other.
【0008】以下にSrTiO3を主成分とするバリス
タとコンデンサの両方の特性を有する従来の電圧依存性
非直線抵抗体磁器素子について説明する。A conventional voltage-dependent nonlinear resistor ceramic element having both characteristics of a varistor and a capacitor mainly composed of SrTiO 3 will be described below.
【0009】図3に示すように、コネクタなどから侵入
するノイズの除去に使用する電圧依存性非直線抵抗体磁
器素子10は、SrTiO3を主成分とした電圧依存性
非直線抵抗特性を有する半導体セラミックからなる円筒
形の素子11の上面と下面に電極12と電極13を配設
したものである。As shown in FIG. 3, a voltage-dependent nonlinear resistor porcelain element 10 used for removing noise entering from a connector or the like is a semiconductor having a voltage-dependent nonlinear resistance characteristic mainly composed of SrTiO 3. An electrode 12 and an electrode 13 are provided on the upper and lower surfaces of a cylindrical element 11 made of ceramic.
【0010】図4に示すように、電圧依存性非直線抵抗
体磁器素子10をコネクタに組み込むとき、導電性接着
剤16および17でピン15と素子11の電極12およ
び共通端子14を素子11の電極13をそれぞれ接着す
る。このとき、ピン15と素子11の隙間に導電性接着
剤16の一部が流れ込むことがある。As shown in FIG. 4, when the voltage-dependent nonlinear resistor porcelain element 10 is incorporated in a connector, the pins 15 and the electrodes 12 and the common terminal 14 of the element 11 The electrodes 13 are respectively bonded. At this time, a part of the conductive adhesive 16 may flow into the gap between the pin 15 and the element 11.
【0011】[0011]
【発明が解決しようとする課題】上述のように従来の構
成では、ピン15と素子11の隙間に導電性接着剤16
の一部が流れ込み、見掛け上の電極間距離が小さくな
り、バリスタ電圧が低くなり、バリスタ電圧に極性がつ
き、絶縁抵抗が低くなるという問題点を有していた。As described above, in the conventional configuration, the conductive adhesive 16 is provided in the gap between the pin 15 and the element 11.
Has a problem that the apparent distance between the electrodes decreases, the varistor voltage decreases, the varistor voltage becomes polar, and the insulation resistance decreases.
【0012】本発明は上記従来の問題点を解決するもの
で、ピンと素子の間の隙間に半田の一部が流れ込んでも
バリスタ電圧が変化せずバリスタ電圧に極性がつかず絶
縁抵抗が変化しない電圧依存性非直線抵抗体磁器素子を
提供することを目的とする。The present invention solves the above-mentioned conventional problems. Even if a part of the solder flows into a gap between a pin and an element, a voltage at which the varistor voltage does not change, the varistor voltage has no polarity, and the insulation resistance does not change. It is an object to provide a dependent nonlinear resistor porcelain element.
【0013】[0013]
【課題を解決するための手段】この目的を達成するため
に本発明の電圧依存性非直線抵抗体磁器素子は、中心部
に円筒状の貫通孔と同軸上で外周径が異なる2つの円筒
とその2つの円筒の境界の平面とを有し、かつ、前記円
筒の大きい径の方の長さが小さい径の方の長さよりも短
い形状でSrTiO 3 を主成分とした電圧依存性非直線
抵抗特性を有する半導体セラミックと、この半導体セラ
ミックの前記貫通孔の内周全面に配設した内周電極と、
前記小さい径の円筒の端面から所定の寸法だけ除いた外
周面に配設した別の電極と、前記境界の平面上に配設す
ると共に前記外周全面に配設した電極と導電性接着剤を
用いて電気的に接続される共通端子と、前記貫通孔を貫
通させて導電性接着剤により前記内周全面に設けた電極
と電気的に接続するピンとを備えたものである。In order to achieve this object, a voltage-dependent nonlinear resistor porcelain element according to the present invention comprises a cylindrical through-hole at the center and two coaxial cylinders having different outer diameters on the same axis. The plane of the boundary between the two cylinders and the circle
The length of the larger diameter of the cylinder is shorter than the length of the smaller diameter
Voltage-dependent non-linear shape mainly composed of SrTiO 3
A semiconductor ceramic having a resistance characteristic;
An inner circumferential electrode disposed on the entire inner circumferential surface of the through hole of Mick,
The outside of the small-diameter cylinder excluding a predetermined dimension from the end face
Another electrode disposed on the peripheral surface, and disposed on the plane of the boundary.
And an electrode and a conductive adhesive disposed on the entire outer periphery.
And a common terminal electrically connected to the
An electrode provided on the entire inner circumference by a conductive adhesive
And a pin that is electrically connected .
【0014】[0014]
【作用】この構成によると、半導体セラミックの内周全
面に配設した電極が一つの電極として一体化されている
ので、例えピンと半導体セラミックの隙間に導電性接着
剤が流れ込んだとしても電極間距離は変化しない。 ま
た、半導体セラミックの小さい径の円筒外周面に設けた
電極と共通端子とを接続する際に、余分な導電性接着剤
のたれを大きい径の円筒で止めることができるので、電
極間距離は変化しないこととなる。仮に大きい径の円筒
の外周に導電性接着剤が垂れ込んだとしても外周面に設
けた電極から離れる方向に垂れ込むこととなるので見掛
けの電極間距離は変化しない。 また全体が円筒形で一方
の端部が他方の端部より大きい径の円筒としているの
で、表面絶縁距離を広く取ることができる。 さらに共通
端子と、半導体セラミックの小さい径の円筒外周面に設
けた電極との接続が容易になるとともに接着強度も大き
くすることができる。 従ってバリスタ電圧が低くなった
り、極性が付いて絶縁抵抗が低くなるのを防止すること
ができ、課電寿命特性などの電気特性に優れた電圧依存
性非直線抵抗体磁器素子となる。 According to this structure , the entire inner circumference of the semiconductor ceramic is
The electrodes arranged on the surface are integrated as one electrode
So, for example, conductive adhesion in the gap between the pin and the semiconductor ceramic
Even if the agent flows, the distance between the electrodes does not change. Ma
Also, provided on the outer peripheral surface of a small diameter cylinder of semiconductor ceramic
When connecting the electrode and the common terminal, use extra conductive adhesive
The sag can be stopped by a large-diameter cylinder.
The distance between the poles will not change. A cylinder with a large diameter
Even if the conductive adhesive drips around the outer periphery of the
Because it will hang in the direction away from the electrode
The distance between the electrodes does not change. The whole is cylindrical and one side
Of one end is larger than the other end.
Thus, the surface insulation distance can be widened. More common
Terminal and the outer peripheral surface of a small diameter cylinder of semiconductor ceramic.
Easier connection to girder electrodes and higher adhesive strength
Can be done. Therefore, the varistor voltage has decreased
To prevent insulation resistance from becoming low due to polarity.
Voltage dependence with excellent electrical characteristics such as charging life characteristics
Becomes a non-linear resistor ceramic element.
【0015】[0015]
(実施例1)以下本発明の第1の実施例について説明す
る。(Embodiment 1) Hereinafter, a first embodiment of the present invention will be described.
【0016】SrCO3,CaCO3,BaCO3,Mg
CO3,TiO2を下記の(表1)に示すように組成比を
種々変えて秤量し、ボールミルなどで24時間混合す
る。SrCO 3 , CaCO 3 , BaCO 3 , Mg
CO 3 and TiO 2 are weighed at various composition ratios as shown in the following (Table 1), and mixed by a ball mill or the like for 24 hours.
【0017】[0017]
【表1】 [Table 1]
【0018】次に、乾燥した後1050℃で4時間焼成
し、再びボールミルなどで24時間粉砕した後乾燥し第
1成分とする。Next, after drying, it is baked at 1050 ° C. for 4 hours, pulverized again by a ball mill or the like for 24 hours, and dried to obtain a first component.
【0019】次に、第1成分、第2成分、第3成分を
(表1)に示した組成比になるように秤量し、ボールミ
ルなどで24時間混合した後、乾燥し、ポリビニルアル
コールなどの有機バインダーを10重量%添加して造粒
した後、1(t/cm2)のプレス圧力で円筒の外周径が小
さい部分は外径4mmφ内径1.4mmφ高さ2.5mm、円
筒の外周径が大きい部分は外径6mmφ内径1.4mmφ高
さ0.5mmの円筒状に成形し、空気中で1200℃で1
0時間焼成し脱バインダーする。次に、還元性雰囲気た
とえばN2:H2=9:1のガス中で1425℃で5時間
焼成する。さらにその後、酸化性雰囲気例えば空気中で
1120℃で5時間焼成する。こうして得られた素子の
内周面にZnなどからなる導電性オーミックペーストを
例えばローラー転写などの方法により配設し、外周径が
小さい円筒の端面から所定寸法を除いた外周面にZnな
どからなる導電性オーミックペーストを例えばローラー
転写などの方法により配設する。その後120℃で10
分間乾燥させ、さらにその上から非オーミック性の導電
性ペーストを同様にしてローラー転写などの方法により
設け、120℃で10分間乾燥させ、630℃で3分間
焼成し、図1に示すように、素子3に電極1と電極2を
配設した電圧依存性非直線抵抗体磁器素子4を形成す
る。Next, the first component, the second component, and the third component are weighed so as to have the composition ratios shown in (Table 1), mixed with a ball mill or the like for 24 hours, dried, and dried with polyvinyl alcohol or the like. After adding 10% by weight of an organic binder and granulating, a portion having a small outer diameter of the cylinder at a pressing pressure of 1 (t / cm 2 ) has an outer diameter of 4 mm, an inner diameter of 1.4 mm, a height of 2.5 mm, and an outer diameter of the cylinder. The large part is formed into a cylindrical shape with an outer diameter of 6 mmφ, an inner diameter of 1.4 mmφ and a height of 0.5 mm,
Baking for 0 hours and debinding. Next, firing is performed at 1425 ° C. for 5 hours in a reducing atmosphere, for example, a gas of N 2 : H 2 = 9: 1. After that, firing is performed at 1120 ° C. for 5 hours in an oxidizing atmosphere such as air. A conductive ohmic paste made of Zn or the like is provided on the inner peripheral surface of the element thus obtained by, for example, a roller transfer method, and the outer peripheral surface made of Zn or the like is obtained by removing a predetermined dimension from an end surface of a cylinder having a small outer diameter. The conductive ohmic paste is provided by a method such as roller transfer. Then at 120 ° C for 10
1 minute, and then a non-ohmic conductive paste is further provided thereon by a method such as roller transfer, dried at 120 ° C. for 10 minutes, and baked at 630 ° C. for 3 minutes, as shown in FIG. The voltage-dependent nonlinear resistor porcelain element 4 in which the electrode 1 and the electrode 2 are arranged on the element 3 is formed.
【0020】次に、図2に示すように、電圧依存性非直
線抵抗体磁器素子4に半田などの導電性接着剤5,8に
よりピン6および共通端子9を取り付け、ブタジエンゴ
ムなどの樹脂を充填し、加熱硬化する。Next, as shown in FIG. 2, the pin 6 and the common terminal 9 are attached to the voltage-dependent nonlinear resistor porcelain element 4 with conductive adhesives 5, 8 such as solder, and a resin such as butadiene rubber is applied. Fill and heat cure.
【0021】(実施例2)第1の実施例と同様にして得
た素子の、内周面にZnなどからなる導電性オーミック
ペーストを例えばローラー転写などの方法により配設
し、円筒の外周径が小さい部分の外周面全体にZnなど
からなる導電性オーミックペーストを例えばローラー転
写などの方法により配設した後、120℃で10分間乾
燥させ、630℃、3分間焼成する。次に、弱酸などに
より導電部分を活性化し、無電解により活性化した部分
にのみCuめっき・Niめっきを施し、さらにその上に
電解半田めっきをし、三層構造にした電極1と2とす
る。次に、図2に示した第1の実施例と同様に半田など
の導電性接着剤5,8によりピン6および共通端子9を
取り付け、ブタジエンゴムなどの樹脂を充填し、加熱硬
化する。このようにして得られた電圧依存性非直線抵抗
体磁器素子の素子単品とコネクタ組み立て後の電気特性
をそれぞれ(表2)と(表3)に示す。(Embodiment 2) A conductive ohmic paste made of Zn or the like is provided on the inner peripheral surface of the element obtained in the same manner as in the first embodiment by, for example, a roller transfer method. After a conductive ohmic paste made of Zn or the like is provided on the entire outer peripheral surface of the portion having a small diameter by, for example, a roller transfer method, the paste is dried at 120 ° C. for 10 minutes, and baked at 630 ° C. for 3 minutes. Next, the conductive portion is activated by a weak acid or the like, Cu plating / Ni plating is applied only to the portion activated by electroless, and electrolytic solder plating is further performed thereon to obtain electrodes 1 and 2 having a three-layer structure. . Next, similarly to the first embodiment shown in FIG. 2, the pins 6 and the common terminals 9 are attached with conductive adhesives 5 and 8 such as solder, filled with a resin such as butadiene rubber, and cured by heating. The electrical characteristics of the thus obtained voltage-dependent nonlinear resistor porcelain element alone and after assembling the connector are shown in (Table 2) and (Table 3), respectively.
【0022】[0022]
【表2】 [Table 2]
【0023】[0023]
【表3】 [Table 3]
【0024】(表2)および(表3)のV1mAは、1m
Aの電流を流したときに素子の両端にかかる電圧であ
り、V1mAの極性は、正方向のV1mAと負方向のV1mAの
差を正方向のV1mAで割った値であり、絶縁抵抗は、印
加電圧12VDCのときのピン6と共通端子9の間の絶
縁抵抗値である。この(表2),(表3)から明らかな
ように本実施例による電圧依存性非直線抵抗体磁器素子
は、V1mAの極性および絶縁抵抗の点で従来例に比して
優れた効果が得られる。V 1mA in Tables 2 and 3 is 1 m
A voltage across the element when current flows in the A, the polarity of V 1mA is a value obtained by dividing the difference between the positive direction of V 1mA and the negative direction of the V 1mA in the positive direction of V 1mA, insulation The resistance is an insulation resistance value between the pin 6 and the common terminal 9 when the applied voltage is 12 VDC. As is clear from Tables 2 and 3, the voltage-dependent nonlinear resistor porcelain element according to the present embodiment has an effect superior to the conventional example in terms of the polarity of V1 mA and the insulation resistance. can get.
【0025】また第1成分のSrの一部をCa,Ba,
Mgで置換する割合は実施例では一部しか示さなかった
が、素子の特性としてバリスタ特性とコンデンサ特性を
同時に持つ範囲内であればどのようなものであってもか
まわない。また第2成分、第3成分は実施例では一部の
組み合わせについてのみ示したが素子の特性としてバリ
スタ特性とコンデンサ特性を同時に持つ範囲内であれば
どのような成分であってもかまわない。また、オーミッ
ク性の電極としてはZn以外にAg,Cu,Niなどが
あるが、これら以外でも素子と電極との界面でオーミッ
ク接続がとれるものであればどのようなものであっても
かまわない。また、めっきの成分およびその組合せにつ
いては一部についてのみ示したが、同様の効果が得られ
るものであればなんでもかまわない。めっきする方法は
電解でも無電解でもかまわないし、酸性めっきでも塩基
性めっきでも中性めっきでもかまわない。また電圧依存
性非直線抵抗体磁器素子にたとえばフェライト、コイ
ル、トロイダルコイルなどからなるインダクタンスを接
続する構成にし、ノイズ除去効果を改善することができ
る。A part of the first component Sr is Ca, Ba,
Although only a part of the ratio of substitution with Mg is shown in the embodiment, any ratio may be used as long as the characteristics of the element are within a range having both varistor characteristics and capacitor characteristics at the same time. In the embodiment, the second component and the third component are shown only for some combinations. However, any components may be used as long as the components have a varistor characteristic and a capacitor characteristic at the same time. As the ohmic electrode, there are Ag, Cu, Ni, etc. other than Zn, but any other electrode may be used as long as an ohmic connection can be made at the interface between the element and the electrode. Although only some of the plating components and combinations thereof are shown, any components can be used as long as similar effects can be obtained. The plating method may be electrolytic or electroless, and may be acidic plating, basic plating, or neutral plating. Further, it is possible to improve the noise elimination effect by connecting the voltage-dependent nonlinear resistor porcelain element to an inductance composed of, for example, a ferrite, a coil, a toroidal coil, or the like.
【0026】以上のように本実施例によれば、全体が円
筒形で円筒の一方の端部が他の部分よりも大きい径の円
筒状をなし、大きい径の円筒の長さが小さい径の円筒の
長さよりも短く、全体の円筒の中央部に円筒状の貫通孔
を有するように形成し、貫通孔の内周面全体に電極1を
配設し、外周径が小さい円筒の端面より所定の寸法だけ
除いた外周面に電極2を配設することにより、円筒の内
周の電極1が一つの電極として一体化されるため、ピン
6と素子3の隙間に半田などの導電性接着剤5が流れ込
んでも一体化された電極1の上であるため、見掛けの電
極間距離は変化しない。したがって電気的特性は安定
で、バリスタ電圧は変化せず、バリスタ電圧に極性はつ
かず、絶縁抵抗は変化しない。As described above, according to the present embodiment, the entirety is cylindrical, and one end of the cylinder has a larger diameter than the other portion, and the length of the larger diameter cylinder is smaller than that of the other portion. It is shorter than the length of the cylinder, is formed so as to have a cylindrical through-hole at the center of the entire cylinder, and the electrode 1 is disposed on the entire inner peripheral surface of the through-hole. By arranging the electrode 2 on the outer peripheral surface excluding the dimension of the above, the electrode 1 on the inner periphery of the cylinder is integrated as one electrode, so that a conductive adhesive such as solder is provided in the gap between the pin 6 and the element 3. Even if 5 flows in, the apparent distance between the electrodes does not change because it is on the integrated electrode 1. Therefore, the electrical characteristics are stable, the varistor voltage does not change, the varistor voltage has no polarity, and the insulation resistance does not change.
【0027】さらに共通端子9を電極2に導電性接着剤
8で接続するとき接触する面積が大きくなり接続が容易
で、共通端子と素子の間の接着力を強くすることがで
き、機械的強度を向上させることができるとともに、特
に温度サイクル試験による特性の劣化を小さくすること
ができ、信頼性を向上させることができる。Further, when the common terminal 9 is connected to the electrode 2 with the conductive adhesive 8, the contact area becomes large, the connection is easy, the adhesive force between the common terminal and the element can be increased, and the mechanical strength can be increased. Can be improved, and particularly, deterioration of characteristics due to a temperature cycle test can be reduced, and reliability can be improved.
【0028】また、余分な半田などの導電性接着剤のた
れが生じても大きい径の円筒の部分で止めることによ
り、見掛けの電極間距離は変化しないようにすることが
できる。また、大きい径の円筒の外周に半田などの導電
性接着剤がたれ込んでも電極1から離れる方向にたれ込
むことから、見掛けの電極間距離は変化しない。また全
体が円筒形で円筒の一方の端部が他の部分より大きい径
の円筒としているので、表面絶縁距離を広くとることが
できるため電気的特性は安定で、バリスタ電圧は変化せ
ず、バリスタ電圧に極性はつかず、絶縁抵抗は変化せ
ず、素子をコネクタに組み立てても組み立て前後の特性
の変化は極めて小さく安定になるという効果が得られ、
課電寿命特性を改善することができ、信頼性を向上させ
ることができる。また電極1、電極2、共通端子9の最
上層を半田めっきにすることにより、例えばピン6と電
極1の隙間や電極2と共通端子9の隙間を小さくしてお
けば、導電性接着剤がなくても加熱処理するだけで電極
1、電極2、共通端子9の最上層の半田めっきが互いに
溶融して接続させることができる。In addition, even if excess conductive adhesive such as solder occurs, the apparent distance between the electrodes can be kept unchanged by stopping at the cylindrical portion having a large diameter. Further, even if the conductive adhesive such as solder falls on the outer periphery of the cylinder having a large diameter, it falls in the direction away from the electrode 1, so that the apparent distance between the electrodes does not change. Also, since the whole is cylindrical and one end of the cylinder is larger in diameter than the other parts, the surface insulation distance can be widened, so the electrical characteristics are stable, the varistor voltage does not change, and the varistor does not change. The polarity is not applied to the voltage, the insulation resistance does not change, and even if the element is assembled into a connector, the effect that the change in characteristics before and after the assembly is extremely small and stable is obtained,
The service life characteristics can be improved, and the reliability can be improved. Further, by forming the uppermost layer of the electrodes 1, 2 and the common terminal 9 by solder plating, for example, if the gap between the pin 6 and the electrode 1 and the gap between the electrode 2 and the common terminal 9 are reduced, the conductive adhesive can be used. Even if it is not performed, the solder plating of the uppermost layer of the electrode 1, the electrode 2, and the common terminal 9 can be melted and connected to each other only by performing the heat treatment.
【0029】また素子3の電気的特性を十分に引き出す
ためにはCuめっき、Niめっき、Crめっき、Snめ
っき、Pbめっき、Auめっき、Agめっき、Pdめっ
き、半田めっきのうち一つまたは複数の種類を重ねた電
極とすることにより、素子と電極の界面にバリヤーを形
成することなく素子の電気的特性を十分に引き出すこと
ができ、容易に半田付けでき、複数の種類の多層めっき
構造にすることにより、半田耐熱性を向上させることが
できる。また素子の形状を円筒状にすることにより素子
の長さは長くなるが、素子の半径方向には寸法を小さく
できるためコネクタのピン間隔を小さくすることが可能
で、コネクタを小型化するのに有効である。In order to sufficiently bring out the electrical characteristics of the element 3, one or more of Cu plating, Ni plating, Cr plating, Sn plating, Pb plating, Au plating, Ag plating, Pd plating and solder plating are required. By using a stacked type of electrode, the electrical characteristics of the device can be sufficiently brought out without forming a barrier at the interface between the device and the electrode, and it can be easily soldered to form multiple types of multilayer plating structures. Thereby, solder heat resistance can be improved. Although the length of the element is increased by making the element a cylindrical shape, the dimension in the radial direction of the element can be reduced, so that the pin interval of the connector can be reduced, and the size of the connector can be reduced. It is valid.
【0030】[0030]
【発明の効果】以上本発明によると、半導体セラミック
の内周全面に配設した電極が一つの電極として一体化さ
れているので、例えピンと半導体セラミックの隙間に導
電性接着剤が流れ込んだとしても電極間距離は変化しな
い。 また、半導体セラミックの小さい径の円筒外周面に
設けた電極と共通端子とを接続する際に、余分な導電性
接着剤のたれを大きい径の円筒で止めることができるの
で、電極間距離は変化しないこととなる。仮に大きい径
の円筒の外周に導電性接着剤が垂れ込んだとしても外周
面に設けた電極から離れる方向に垂れ込むこととなるの
で見掛けの電極間距離は変化しない。 また全体が円筒形
で一方の端部が他方の端部より大きい径の円筒としてい
るので、表面絶縁距離を広く取ることができる。 さらに
共通端子と、半導体セラミックの小さい径の円筒外周面
に設けた電極との接続が容易になるとともに接着強度も
大きくすることができる。 従ってバリスタ電圧が低くな
ったり、極性が付いて絶縁抵抗が低くなるのを防止する
ことができ、課電寿命特性などの電気特性に優れた電圧
依存性非直線抵抗体磁器素子となる。 According to the present invention, the semiconductor ceramic
The electrodes arranged on the entire inner circumference of the
Are inserted in the gap between the pin and the semiconductor ceramic.
Even if the conductive adhesive flows in, the distance between the electrodes does not change.
No. Also, on the outer peripheral surface of a small diameter cylinder of semiconductor ceramic
When connecting the provided electrode to the common terminal,
You can stop the dripping of the adhesive with a large diameter cylinder
Thus, the distance between the electrodes does not change. Temporarily large diameter
Even if the conductive adhesive drips around the outer circumference of the cylinder
Will hang down in the direction away from the electrodes on the surface.
Thus, the apparent distance between the electrodes does not change. The whole is cylindrical
And one end of the cylinder is larger in diameter than the other end.
Therefore, the surface insulation distance can be widened. further
Common terminal and outer peripheral surface of small diameter cylinder of semiconductor ceramic
Connection with the electrode provided on
Can be bigger. Therefore, the varistor voltage is low.
To prevent insulation resistance from becoming low due to
Can be a voltage with excellent electrical characteristics such as charging life characteristics
It becomes a dependent nonlinear resistor porcelain element.
【図1】本発明の一実施例の電圧依存性非直線抵抗体磁
器素子の断面図FIG. 1 is a sectional view of a voltage-dependent nonlinear resistor porcelain element according to an embodiment of the present invention.
【図2】同電圧依存性非直線抵抗体磁器素子をコネクタ
に接続したときの断面略図FIG. 2 is a schematic sectional view when the voltage-dependent nonlinear resistor porcelain element is connected to a connector.
【図3】従来の電圧依存性非直線抵抗体磁器素子の断面
図FIG. 3 is a cross-sectional view of a conventional voltage-dependent nonlinear resistor porcelain element.
【図4】同電圧依存性非直線抵抗体磁器素子をコネクタ
に接続したときの断面図FIG. 4 is a cross-sectional view when the voltage-dependent nonlinear resistor porcelain element is connected to a connector.
1 電極 2 電極 3 素子 1 electrode 2 electrodes 3 elements
Claims (1)
径が異なる2つの円筒とその2つの円筒の境界の平面と
を有し、かつ、前記円筒の大きい径の方の長さが小さい
径の方の長さよりも短い形状でSrTiO3を主成分と
した電圧依存性非直線抵抗特性を有する半導体セラミッ
クと、この半導体セラミックの前記貫通孔の内周全面に
配設した電極と、前記小さい径の円筒の端面から所定の
寸法だけ除いた外周面に配設した別の電極と、前記境界
の平面上に配設すると共に前記外周全面に配設した電極
と導電性接着剤を用いて電気的に接続される共通端子
と、前記貫通孔を貫通させて導電性接着剤により前記内
周全面に設けた電極と電気的に接続するピンとを備えた
電圧依存性非直線抵抗体磁器素子。At the center, there are two cylindrical cylinders having different outer diameters coaxially with a cylindrical through hole at the center and a plane at the boundary between the two cylinders, and the length of the larger diameter of the cylinder a semiconductor ceramic having a voltage-dependent nonlinear resistance characteristics mainly composed of SrTiO 3 in a shorter form than the length in the direction of smaller diameter, the electrode disposed on the inner peripheral entire surface of the through-hole of the semiconductor ceramic, Another electrode disposed on an outer peripheral surface of the small-diameter cylinder by removing a predetermined dimension from an end surface thereof ;
Electrodes disposed on the plane of
Terminal that is electrically connected to the terminal using a conductive adhesive
And penetrating the through-hole, and the conductive adhesive
A voltage-dependent nonlinear resistor porcelain element comprising: an electrode provided on the entire peripheral surface; and a pin electrically connected to the electrode .
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4046731A JP3003359B2 (en) | 1992-03-04 | 1992-03-04 | Voltage-dependent nonlinear resistor porcelain element |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4046731A JP3003359B2 (en) | 1992-03-04 | 1992-03-04 | Voltage-dependent nonlinear resistor porcelain element |
Publications (2)
Publication Number | Publication Date |
---|---|
JPH05251212A JPH05251212A (en) | 1993-09-28 |
JP3003359B2 true JP3003359B2 (en) | 2000-01-24 |
Family
ID=12755481
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP4046731A Expired - Fee Related JP3003359B2 (en) | 1992-03-04 | 1992-03-04 | Voltage-dependent nonlinear resistor porcelain element |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP3003359B2 (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR102648110B1 (en) * | 2015-12-18 | 2024-03-18 | 케이앤드엔 엔지니어링, 인크. | Hvac system air filter |
-
1992
- 1992-03-04 JP JP4046731A patent/JP3003359B2/en not_active Expired - Fee Related
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR102648110B1 (en) * | 2015-12-18 | 2024-03-18 | 케이앤드엔 엔지니어링, 인크. | Hvac system air filter |
Also Published As
Publication number | Publication date |
---|---|
JPH05251212A (en) | 1993-09-28 |
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