JPH0442503A - Voltage dependent nonlinear resistance procelain element - Google Patents

Voltage dependent nonlinear resistance procelain element

Info

Publication number
JPH0442503A
JPH0442503A JP2150926A JP15092690A JPH0442503A JP H0442503 A JPH0442503 A JP H0442503A JP 2150926 A JP2150926 A JP 2150926A JP 15092690 A JP15092690 A JP 15092690A JP H0442503 A JPH0442503 A JP H0442503A
Authority
JP
Japan
Prior art keywords
electrode
cylinder
ohmic
electrodes
voltage
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2150926A
Other languages
Japanese (ja)
Inventor
Keiichi Noi
野井 慶一
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP2150926A priority Critical patent/JPH0442503A/en
Publication of JPH0442503A publication Critical patent/JPH0442503A/en
Pending legal-status Critical Current

Links

Landscapes

  • Thermistors And Varistors (AREA)

Abstract

PURPOSE:To obtain a low-price element having a superior solder-heat resistance in which a varistor voltage does not change and also an insulating resistance does not change by a method wherein a doughut-form electrode of a main conductor ceramic cylinder is united into one body with an electrode of an inner circumferential plane and overlaying a non-ohmic electrode on an ohmic electrode as a fundamental one. CONSTITUTION:On one end plane of a sintered body, a doughnut-form electrode is formed by using an ohmic electrode of Ag, for example, as a fundamental one and also an ohmic electrode is formed on an inner circumferential plane and these are united into one body, thereby forming a fundamental elementrode 1. Meanwhile, on another end plane, a counter ohmic electrode is arranged on an outer circumferential plane so as to form a fundamental electrode 3. Next, upper electrodes 2, 4 consisting of non-ohmic electrodes are formed by using a non-ohmic paste such as Ag as a upper coating. These are sintered to make an element 5.

Description

【発明の詳細な説明】 産業上の利用分野 本発明は電気機器、電子機器で発生する異常高電圧、ノ
イズ、静電気などから機器の半導体及び回路を保護する
ためのコンデンサ特性とバリスタ特性を有する電圧依存
性非直線抵抗体磁器素子に関するものである。
DETAILED DESCRIPTION OF THE INVENTION Field of Industrial Application The present invention relates to a voltage having capacitor characteristics and varistor characteristics to protect semiconductors and circuits of equipment from abnormal high voltage, noise, static electricity, etc. generated in electrical equipment and electronic equipment. This invention relates to dependent nonlinear resistance ceramic elements.

従来の技術 従来、各種の電気機器、電子機器における異常高電圧の
吸収、ノイズの除去、火花消去、静電気対策のために電
圧依存性非直線抵抗特性を有するSiCバリスタや、Z
nO系バリスタなどが使用されている。このようなバリ
スタの電圧−電流特性は近似的に次式のように表すこと
ができる。
Conventional technology Conventionally, SiC varistors and Z
nO type varistors are used. The voltage-current characteristics of such a varistor can be approximately expressed as in the following equation.

I=(V/C)“ ここで、■は電流、■は電圧、Cはバリスタ固有の定数
、αは電圧−電流非直線指数である。
I=(V/C)" Here, ■ is current, ■ is voltage, C is a constant specific to the varistor, and α is a voltage-current nonlinear index.

SiCバリスタのαは2〜7程度、ZnO系バリスタで
はαが50にもおよぶものがある。このようなバリスタ
は比較的高い電圧の吸収には優れた性能を有しているか
、誘電率か低く、固有の静電容量が小さいため、バリス
タ電圧以下の比較的低い電圧の吸収にはほとんど効果を
示さず、また誘電損失tanδが5〜10%と大きい。
The α of SiC varistors is about 2 to 7, and the α of some ZnO-based varistors is as high as 50. Such varistors have excellent performance in absorbing relatively high voltages, or have a low dielectric constant and small inherent capacitance, making them almost ineffective in absorbing relatively low voltages below the varistor voltage. Furthermore, the dielectric loss tan δ is as large as 5 to 10%.

一方、これらの低電圧のノイズなどの除去には見かけの
誘電率が5 X 10’程度で、tanδか1%前後の
半導体コンデンサが利用されている。
On the other hand, semiconductor capacitors with an apparent dielectric constant of about 5 x 10' and a tan δ of about 1% are used to remove these low voltage noises.

しかし、このような半導体コンデンサはサージなどによ
りある限度以上の電圧または電流が印加されると、静電
容量が減少したり破壊したりして、コンデンサとしての
機能を果たさなくなったりする。
However, when a voltage or current exceeding a certain limit is applied to such a semiconductor capacitor due to a surge or the like, the capacitance decreases or is destroyed, and the capacitor no longer functions as a capacitor.

そこで最近になって5rTi03を主成分とし、バリス
タ特性とコンデンサ特性の両方の機能を有するものが開
発され、コンピュータなどの電子機器におけるIC,L
SIなどの半導体素子及び回路の保護や、電子機器を相
互に継ぐケーブルやコネクタなどから侵入するノイズの
除去に利用されている。
Recently, products containing 5rTi03 as the main component and having both varistor and capacitor properties have been developed, and ICs and L
It is used to protect semiconductor elements and circuits such as SI, and to remove noise that enters from cables and connectors that interconnect electronic devices.

発明が解決しようとする課題 前記の5rTi03を主成分とするバリスタとコンデン
サの両方の機能を有する素子を、コネクタなとから侵入
するノイズの除去に使用する場合、素子の構成は一般的
に第3図のようになっている。第3図において、15及
び16は電極、17は素子である。
Problems to be Solved by the Invention When an element having the functions of both a varistor and a capacitor, which is mainly composed of 5rTi03, is used to remove noise that enters from a connector etc., the configuration of the element is generally a third type. It looks like the picture. In FIG. 3, 15 and 16 are electrodes, and 17 is an element.

そして、このような素子をコネクタに組み込むと一般的
に第4図のようになる。ところが第4図のような構成に
すると、ピン18と素子22の隙間に半田19の一部が
流れ込み、見掛は上の電極間距離が小さくなり、バリス
タ電圧が低くなり、またバリスタ電圧に極性かつき、絶
縁抵抗が低くなるといった欠点を有していた。第4図に
おいて、20及び21は電極、19は半田、24は共通
端子である。
When such an element is incorporated into a connector, it generally becomes as shown in FIG. However, when the configuration shown in Fig. 4 is used, a portion of the solder 19 flows into the gap between the pin 18 and the element 22, and the distance between the upper electrodes appears to become smaller, lowering the varistor voltage and causing polarity in the varistor voltage. It has the drawbacks of being thick and having low insulation resistance. In FIG. 4, 20 and 21 are electrodes, 19 is solder, and 24 is a common terminal.

そこで本発明では、ピンと素子の間の隙間に半田の一部
が流れ込んでもバリスタ電圧が変化せず、バリスタ電圧
に極性がつかず、絶縁抵抗か変化しない構成で、電極の
形成かしやすく、半田付は性か良く、半田耐熱性に優れ
た安価な素子を提供することを目的とするものである。
Therefore, in the present invention, even if a part of the solder flows into the gap between the pin and the element, the varistor voltage does not change, the varistor voltage does not have polarity, and the insulation resistance does not change. The purpose is to provide an inexpensive element that is easy to attach and has excellent soldering heat resistance.

課題を解決するための手段 前記の問題点を解決するために本発明では、SrTiO
3を主成分とした電圧依存性非直線抵抗特性を有する半
導体セラミックを円筒の中央部に円筒状の貫通穴を有す
るように形成し、前記円筒の一方の端面に外周が前記円
筒の外径よりも小さく内周か前記貫通穴と同じ径のドー
ナツ状の電極を設けるとともに、前記貫通穴の内周面に
電極を設け、前記ドーナツ状の電極と前記貫通穴の内周
面の電極を一体化し、前記円筒の他方の端面側で前記円
筒の外周面上に対向する電極を設け、これらに使用する
電極は下地がオーミック性電極であり上地に非オーミッ
ク性電極を重ねたことを特徴とする電圧依存性非直線抵
抗体磁器素子を得ることにより、問題を解決しようとす
るものである。
Means for Solving the Problems In order to solve the above problems, in the present invention, SrTiO
A semiconductor ceramic having a voltage-dependent non-linear resistance characteristic mainly composed of 3 is formed so as to have a cylindrical through hole in the center of the cylinder, and one end surface of the cylinder has an outer periphery smaller than the outer diameter of the cylinder. A donut-shaped electrode with a smaller inner circumference or the same diameter as the through-hole is provided, and an electrode is provided on the inner circumferential surface of the through-hole, and the donut-shaped electrode and the electrode on the inner circumferential surface of the through-hole are integrated. , Opposing electrodes are provided on the outer peripheral surface of the cylinder on the other end surface side of the cylinder, and the electrodes used for these are characterized in that the base is an ohmic electrode and the upper layer is stacked with a non-ohmic electrode. The present invention attempts to solve this problem by obtaining a voltage-dependent nonlinear resistance ceramic element.

作用 本発明の構成によれば、前記円筒の一方の端面に外周が
前記円筒の外径よりも小さく内周が前記貫通穴と同し径
のドーナツ状の電極を設けるとともに、前記貫通穴の内
周面に電極を設け、前記ドーナツ状の電極と前記貫通穴
の内周面の電極を一体化し、前記円筒の他方の端面側で
前記円筒の外周面上に対向する電極を設けた構成にする
ことにより、前記円筒の一方の端面と前記貫通穴の内周
面が一つの電極として一体化されるため、コネクタなと
に組み込んだ際にピンと素子の隙間に半田の一部が流れ
込んでも一体化された電極の上であるため、見掛は上の
電極間距離は変化しない。
According to the configuration of the present invention, a donut-shaped electrode is provided on one end surface of the cylinder, and the outer circumference is smaller than the outer diameter of the cylinder and the inner circumference has the same diameter as the through hole. An electrode is provided on the circumferential surface, the donut-shaped electrode and the electrode on the inner circumferential surface of the through hole are integrated, and an opposing electrode is provided on the outer circumferential surface of the cylinder on the other end surface side of the cylinder. As a result, one end surface of the cylinder and the inner peripheral surface of the through hole are integrated as one electrode, so even if some solder flows into the gap between the pin and the element when it is assembled into a connector, it will not be integrated. The distance between the electrodes does not appear to change because the distance between the electrodes is above the top electrodes.

従って、電気的特性は安定でバリスタ電圧は変化せず、
バリスタ電圧に極性はつかず、絶縁抵抗は変化しないこ
とになる。また、電極としては素子の特性を十分に引き
出すために下地はオーミック性電極で上地に非オーミッ
ク性電極を重ねた構成にすることにより、素子と電極の
界面にバリヤーを形成することなく素子の特性を十分に
引き出すことができ、容易に半田付けでき、半田耐熱性
を向上させることができることとなる。
Therefore, the electrical characteristics are stable and the varistor voltage does not change.
The varistor voltage has no polarity, and the insulation resistance does not change. In addition, in order to fully bring out the characteristics of the element, the electrodes are constructed with an ohmic electrode as the base layer and a non-ohmic electrode on the upper layer, thereby eliminating the formation of a barrier at the interface between the element and the electrode. This means that the characteristics can be fully brought out, it can be easily soldered, and the soldering heat resistance can be improved.

実施例 以下に実施例を挙げて本発明を具体的に説明する。Example The present invention will be specifically described below with reference to Examples.

まず、5rCO:+、CaC0:+、BaCOzMgC
O3,TiO:を下記の第1表に示すよう番こ組成比を
種々変えて秤量し、ボールミルなどで22Hr混合する
。次に、それを乾燥した後、1120℃で4Hr焼成し
、再びボールミルなどで22Hr粉砕した後、乾燥し、
第1成分とする。
First, 5rCO:+, CaC0:+, BaCOzMgC
O3 and TiO: are weighed at various composition ratios as shown in Table 1 below, and mixed for 22 hours using a ball mill or the like. Next, after drying it, it was calcined at 1120°C for 4 hours, ground again for 22 hours using a ball mill, etc., and then dried.
Let it be the first component.

次いで、第1成分、第2成分、第3成分を下記の第1表
に示した組成比になるように秤量し、ボールミルなどで
22Hr混合した後、乾燥し、ポリビニルアルコールな
どの有機バインダーをlQwt%添加して造粒した後、
1 (t /crt)のプレス圧力で外径4φ、内径1
,4φ、高さ2.5t(mm)の円筒状に成形し、空気
中で1110℃で1lHr焼成し脱バインダーする。次
に、還元性雰囲気、例えばN2: H2=9 : 1の
ガス中で1420℃で5Hr焼成する。さらにその後、
酸化、性雰囲気、例えば空気中で1050℃で5Hr焼
成する。
Next, the first component, second component, and third component were weighed to have the composition ratio shown in Table 1 below, mixed for 22 hours using a ball mill, etc., dried, and an organic binder such as polyvinyl alcohol was added to 1Qwt. After adding % and granulation,
1 (t/crt) press pressure, outer diameter 4φ, inner diameter 1
, 4φ, height 2.5t (mm), and baked in air at 1110° C. for 11 hours to remove the binder. Next, baking is performed at 1420° C. for 5 hours in a reducing atmosphere, for example, a gas of N2:H2=9:1. Furthermore, after that
Sintering is performed at 1050° C. for 5 hours in an oxidizing atmosphere such as air.

こうして得られた焼結体の一方の端面に、下地としてA
gなどのオーミック電極を用いて外周か前記円筒の外径
よりも小さく内周が貫通穴と同し径のドーナツ状の電極
を例えばスクリーン印刷なとにより設けるとともに、前
記貫通穴の内周面にオーミック性電極を例えばローラー
転写なとの方法により設け、前記ドーナツ状の電極と前
屈貫通穴の内周面の電極を一体化し、第1図に示すよう
に下地電極1を形成し100℃で乾燥する。また、前記
円筒の他方の端面側で前記円筒の外周面上に対向するオ
ーミック性電極を例えばローラー転写などの方法で設け
、下地電極3を形成し100℃で乾燥する。次に、上地
としてAgなどの非オーミック性ペーストを用いてオー
ミック性電極の上にオーミック性電極を形成したのと同
し方法で非オーミンク性電極からなる上地電極2,4を
形成し、585℃、7m1nで焼成する。このようにし
て素子5が作製される。
On one end surface of the sintered body thus obtained, A was applied as a base layer.
Using an ohmic electrode such as g, a donut-shaped electrode having an outer circumference smaller than the outer diameter of the cylinder and an inner circumference having the same diameter as the through hole is provided by, for example, screen printing, and on the inner circumferential surface of the through hole. An ohmic electrode is provided by a method such as roller transfer, and the donut-shaped electrode and the electrode on the inner peripheral surface of the forward bending through hole are integrated to form a base electrode 1 as shown in FIG. dry. Furthermore, opposing ohmic electrodes are provided on the outer peripheral surface of the cylinder on the other end surface side of the cylinder by a method such as roller transfer, thereby forming the base electrode 3 and drying at 100°C. Next, upper electrodes 2 and 4 made of non-ohmic electrodes are formed using a non-ohmic paste such as Ag as the upper layer in the same manner as the ohmic electrode is formed on the ohmic electrode. Fire at 585° C. and 7 ml. In this way, the element 5 is manufactured.

そして、前記の素子5をコネクタに組み込む場合は、第
2図に示したように半田7.半田13なとによりピン6
及び共通端子14を取り付け、フタジエンゴムなどの樹
脂(図示せず)で下地電極8・ 10及び上地電極9.
11を設けた素子12の周囲なとをモールドする。この
ようにして得られた素子の特性を素子単品とコネクタ組
み立て後について下記の第2表に示す。
When incorporating the element 5 into a connector, solder 7. as shown in FIG. Solder 13 and pin 6
and the common terminal 14 are attached, and the base electrodes 8 and 10 and the upper base electrode 9 are made of resin such as phthalene rubber (not shown).
The periphery of the element 12 provided with 11 is molded. The characteristics of the element thus obtained are shown in Table 2 below for the element alone and after assembly of the connector.

なお、第2表においてVlm、Aは1mAの電流を流し
た時に素子の両端にかかる電圧であり、Vl、、nAの
極性は正方向のVlmAと負方向のVl、の差を正方向
のVl、nAで割った値であり、絶縁抵抗は印加電圧1
2V、D、Cの時のピン6と共通端子14の間の絶縁抵
抗値である。
In Table 2, Vlm, A is the voltage applied to both ends of the element when a current of 1 mA flows, and the polarity of Vl,, nA is the difference between VlmA in the positive direction and Vl in the negative direction. , nA, and the insulation resistance is the applied voltage 1
This is the insulation resistance value between pin 6 and common terminal 14 at 2V, D, and C.

(以  下  余  白) ここで、第1成分のSrの一部をCa、BaMgで置換
する割合は実施例では一部しか示さなかったか、素子の
特性としてバリスタ特性とコンデンサ特性を同時に持つ
範囲内であればとのようなものであってもかまわない。
(Margin below) Here, the ratio of replacing a part of Sr in the first component with Ca and BaMg is only partially shown in the example, or is within the range where the element has both varistor and capacitor characteristics. It doesn't matter if it's something like.

また、第2成分第3成分は実施例では一部の組み合わせ
についてのみ示したが、素子の特性としてバリスタ特性
とコンデンサ特性を同時に持つものであればとのような
成分であってもかまわない。さらに、オミック性の電極
としてはAg以外にZn、Cu。
Furthermore, although only some combinations of the second and third components are shown in the embodiments, they may be any other component as long as the device has varistor characteristics and capacitor characteristics at the same time. In addition to Ag, Zn and Cu can be used as omic electrodes.

Niなどがあるが、これら以外でも素子との間てオーミ
ック接続がとれるものであればどのようなものでであっ
てもかまわない。また、上地電極の種類は半田付は可能
で半田耐熱性に優れた非オーミック性電極であればどの
ようなものであってもかまわない。さらに、前記電圧依
存性非直線抵抗体磁器素子に例えばフェライト、コイル
 トロイダルコイルなどからなるインダクタンスを接続
する構成にし、ノイズ除去効果を改善することかできる
Examples include Ni, but any material other than these may be used as long as it can establish an ohmic connection with the element. Further, the upper electrode may be any non-ohmic electrode that can be soldered and has excellent solder heat resistance. Furthermore, the noise removal effect can be improved by connecting an inductance made of, for example, ferrite or a toroidal coil to the voltage-dependent nonlinear resistance ceramic element.

発明の効果 以上に示したように本発明によれば、前記円筒の一方の
端面に外周が前記円筒の外径よりも小さく内周が前記貫
通穴と同じ径のドーナツ状の電極を設けるとともに、前
記貫通穴の内周面に電極を設け、前記ドーナツ状の電極
と前記貫通穴の内周面の電極を一体化し、前記円筒の他
方の端面側で前記円筒の外周面上に対向する電極を設け
た構成にすることにより、前記円筒の一方の端面と前記
貫通穴の内周面が一つの電極として一体化されるため、
コネクタなどに組み込んだ際にビンと素子の隙間に半田
の一部が流れ込んでも一体化された電極の上であるため
、見掛は上の電極間距離は変化しない。従って、電気的
特性は安定でバリスタ電圧は変化せず、バリスタ電圧に
極性はつかず、絶縁抵抗は変化せず、素子をコネクタに
組み立てても組み立て前後の特性の変化は極めて小さく
安定になるという効果が得られる。また、素子の形状を
円筒状にすることにより素子の長さは長くなるが、素子
の半径方向には寸法を小さくできるため、コネクタのビ
ン間隔を小さくすることか可能で、コネクタを小型化す
るのに有効である。さらに、電極としては素子の特性を
十分に引き出すために、下地はオーミック性電極で上地
は非オーミック性電極を重ねた構成にすることにより、
素子と電極の界面にバリヤーを形成することなく素子の
特性を十分に引き出すことができ、容易に半田付けする
ことができると共に電極の半田耐熱性を改善することが
できる。
Effects of the Invention As described above, according to the present invention, a donut-shaped electrode is provided on one end surface of the cylinder, and the outer circumference is smaller than the outer diameter of the cylinder and the inner circumference has the same diameter as the through hole. An electrode is provided on the inner circumferential surface of the through hole, the donut-shaped electrode and the electrode on the inner circumferential surface of the through hole are integrated, and opposing electrodes are provided on the outer circumferential surface of the cylinder on the other end surface side of the cylinder. With this configuration, one end surface of the cylinder and the inner circumferential surface of the through hole are integrated as one electrode.
Even if some of the solder flows into the gap between the bottle and the element when it is assembled into a connector or the like, the apparent distance between the upper electrodes does not change because it is on the integrated electrode. Therefore, the electrical characteristics are stable, the varistor voltage does not change, the varistor voltage has no polarity, the insulation resistance does not change, and even when the element is assembled into a connector, the change in characteristics before and after assembly is extremely small and stable. Effects can be obtained. In addition, by making the element cylindrical, the length of the element becomes longer, but the element can be made smaller in the radial direction, which makes it possible to reduce the interval between the bins of the connector, making the connector more compact. It is effective for Furthermore, in order to fully bring out the characteristics of the element, the electrodes are constructed by layering an ohmic electrode on the base layer and a non-ohmic electrode on the top layer.
It is possible to fully bring out the characteristics of the element without forming a barrier at the interface between the element and the electrode, and it is possible to easily solder and improve the soldering heat resistance of the electrode.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は本発明による素子を示す断面図、第2図は本発
明による素子をコネクタに組み立てた時の断面図、第3
図は従来例による素子を示す断面図、第4図は従来例に
よる素子をコネクタに組み立てた時の断面図である。 1.3,8.10・・・・・・下地電極、2,4,91
1・・・・・・上地電極、5,12・・・・・・本発明
による素子、6・・・・・・ビン、7.13・・・・・
・半田、14.・1.・、共通端子。 代理人の氏名 弁理士 粟野垂平 ほか1名第1図 第2図 ビ ン 二=ゴ]/14 第 図 t /lク ツ16 弔 図 ぞμz3 ==マド24
Fig. 1 is a sectional view showing an element according to the present invention, Fig. 2 is a sectional view when the element according to the invention is assembled into a connector, and Fig. 3 is a sectional view showing an element according to the present invention.
The figure is a sectional view showing a conventional element, and FIG. 4 is a sectional view of the conventional element assembled into a connector. 1.3, 8.10... Base electrode, 2, 4, 91
1... Upper electrode, 5, 12... Element according to the present invention, 6... Bin, 7.13...
・Handa, 14.・1.・, common terminal. Name of agent: Patent attorney Takuhei Awano and one other person Figure 1 Figure 2 Binni = Go] / 14 Figure t /l shoes 16 Funeral map μz3 = = Mado 24

Claims (2)

【特許請求の範囲】[Claims] (1)SrTiO_3を主成分とした電圧依存性非直線
抵抗特性を有する半導体セラミックを円筒の中央部に円
筒状の貫通穴を有するように形成し、前記円筒の一方の
端面に外周が前記円筒の外径よりも小さく内周が前記貫
通穴と同じ径のドーナツ状の電極を設けるとともに、前
記貫通穴の内周面に電極を設け、前記ドーナツ状の電極
と前記貫通穴の内周面の電極を一体化し、前記円筒の他
方の端面側で前記円筒の外周面上に対向する電極を設け
、これらに使用する電極は下地がオーミック性電極であ
り上地に非オーミック性電極を重ねたことを特徴とする
電圧依存性非直線抵抗体磁器素子。
(1) A semiconductor ceramic mainly composed of SrTiO_3 and having voltage-dependent non-linear resistance characteristics is formed to have a cylindrical through hole in the center of the cylinder, and the outer periphery of the cylinder is formed on one end surface of the cylinder. A donut-shaped electrode smaller than the outer diameter and having an inner circumference the same diameter as the through-hole is provided, and an electrode is provided on the inner circumferential surface of the through-hole, and the donut-shaped electrode and the electrode on the inner circumferential surface of the through-hole are provided. are integrated, and opposing electrodes are provided on the outer peripheral surface of the cylinder on the other end surface side of the cylinder, and the electrodes used for these are ohmic electrodes on the base and non-ohmic electrodes on the top. Features a voltage-dependent nonlinear resistance ceramic element.
(2)主成分のSrの一部をCa,Ba,Mgのうちの
少なくとも一つ以上の元素で置換したことを特徴とする
請求項1記載の電圧依存性非直線抵抗体磁器素子。
(2) The voltage-dependent nonlinear resistance ceramic element according to claim 1, wherein a part of the main component Sr is replaced with at least one element selected from Ca, Ba, and Mg.
JP2150926A 1990-06-08 1990-06-08 Voltage dependent nonlinear resistance procelain element Pending JPH0442503A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2150926A JPH0442503A (en) 1990-06-08 1990-06-08 Voltage dependent nonlinear resistance procelain element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2150926A JPH0442503A (en) 1990-06-08 1990-06-08 Voltage dependent nonlinear resistance procelain element

Publications (1)

Publication Number Publication Date
JPH0442503A true JPH0442503A (en) 1992-02-13

Family

ID=15507430

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2150926A Pending JPH0442503A (en) 1990-06-08 1990-06-08 Voltage dependent nonlinear resistance procelain element

Country Status (1)

Country Link
JP (1) JPH0442503A (en)

Similar Documents

Publication Publication Date Title
JPH08321420A (en) Noise suppression equipment
US20200343051A1 (en) Integrated Component Including a Capacitor and Discrete Varistor
JPH0442503A (en) Voltage dependent nonlinear resistance procelain element
JPH0442504A (en) Voltage dependent nonlinear resistance porcelain element
JPH0442506A (en) Voltage depending nonlinear resistance porcelain element
JPH0442502A (en) Voltage dependent nonlinear resistance porcelain element
JP2871060B2 (en) Voltage-dependent nonlinear resistor porcelain element
JPH03262103A (en) Voltage dependent non-linear resistor porcelain element
JP2830322B2 (en) Voltage-dependent nonlinear resistor porcelain composition and method for manufacturing varistor
JP2882128B2 (en) Voltage-dependent nonlinear resistor porcelain element
JP3003361B2 (en) Voltage-dependent nonlinear resistor porcelain element
JP3003359B2 (en) Voltage-dependent nonlinear resistor porcelain element
JP3003362B2 (en) Voltage-dependent nonlinear resistor porcelain element
JPH05251216A (en) Voltage dependent non-linear resistor ceramic element
JPH03238802A (en) Voltage-dependent nonlinear ceramic resistor
JPH09134807A (en) Voltage-dependent nonlinear resistor ceramic device
JPS6257244B2 (en)
JPS6092692A (en) Composite circuit with varistor and method of producing same
JP2548277B2 (en) Voltage-dependent nonlinear resistor porcelain composition
JPS6032752Y2 (en) composite parts
JP2555791B2 (en) Porcelain composition and method for producing the same
JP3003369B2 (en) Voltage-dependent nonlinear resistor porcelain element
JP2548278B2 (en) Voltage-dependent nonlinear resistor porcelain composition
JPH03109257A (en) Grain boundary oxidized voltage-nonlinear resistance composition
JPS63215017A (en) Voltage-dependent nonlinear resistor porcelain compound