JP2871060B2 - Voltage-dependent nonlinear resistor porcelain element - Google Patents

Voltage-dependent nonlinear resistor porcelain element

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Publication number
JP2871060B2
JP2871060B2 JP2276968A JP27696890A JP2871060B2 JP 2871060 B2 JP2871060 B2 JP 2871060B2 JP 2276968 A JP2276968 A JP 2276968A JP 27696890 A JP27696890 A JP 27696890A JP 2871060 B2 JP2871060 B2 JP 2871060B2
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Japan
Prior art keywords
voltage
semiconductor ceramic
peripheral surface
nonlinear resistor
dependent nonlinear
Prior art date
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Expired - Fee Related
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JP2276968A
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Japanese (ja)
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JPH04151805A (en
Inventor
慶一 野井
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Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
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Publication of JPH04151805A publication Critical patent/JPH04151805A/en
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Description

【発明の詳細な説明】 産業上の利用分野 本発明は電気機器,電子機器で発生する異常高電圧,
ノイズ,静電気などから機器の半導体及び回路を保護す
るためのコンデンサ特性とバリスタ特性を有する電圧依
存性非直線抵抗体磁器素子に関するものである。
The present invention relates to an electric device, an abnormal high voltage generated in an electronic device,
The present invention relates to a voltage-dependent nonlinear resistor porcelain element having capacitor characteristics and varistor characteristics for protecting semiconductors and circuits of equipment from noise, static electricity, and the like.

従来の技術 従来、各種の電気機器,電子機器における異常高電圧
の吸収,ノイズの除去,火花消去,静電気対策のために
電圧依存性非直線抵抗特性を有するSiCバリスタや、ZnO
系バリスタなどが使用されている。このようなバリスタ
の電圧−電流特性は近似的に次式のように表すことがで
きる。
2. Description of the Related Art Conventionally, SiC varistors having a voltage-dependent nonlinear resistance characteristic for absorbing abnormally high voltage, eliminating noise, eliminating sparks, and preventing static electricity in various electric and electronic devices, and ZnO.
System varistors are used. The voltage-current characteristics of such a varistor can be approximately expressed by the following equation.

I=(V/C)α ここで、Iは電流、Vは電圧、Cはバリスタ固有の定
数,αは電圧−電流非直線指数である。
I = (V / C) α where I is a current, V is a voltage, C is a constant specific to a varistor, and α is a voltage-current nonlinear exponent.

SiCバリスタのαは2〜7程度、ZnO系バリスタではα
が50にもおよぶものがある。このようなバリスタは比較
的高い電圧の吸収には優れた性能を有しているが、誘電
率が低く、固有の静電容量が小さいため、バリスタ電圧
以下の比較的低い電圧の吸収にはほとんど効果を示さ
ず、また誘電損失tanδが5〜10%と大きい。
Α of the SiC varistor is about 2 to 7, and α of the ZnO varistor.
There are as many as 50. Such varistors have excellent performance in absorbing relatively high voltages, but because of their low dielectric constant and small inherent capacitance, they are almost insensitive to absorbing relatively low voltages below the varistor voltage. No effect is exhibited, and the dielectric loss tan δ is as large as 5 to 10%.

一方、これらの低電圧のノイズなどの除去には見かけ
の誘電率が5×104程度で、tanδが1%前後の半導体コ
ンデンサが利用されている。しかし、このような半導体
コンデンサはサージなどによりある限度以上の電圧また
は電流が印加されると、静電容量が減少したり破壊した
りして、コンデンサとしての機能を果たさなくなったり
する。
On the other hand, a semiconductor capacitor having an apparent dielectric constant of about 5 × 10 4 and a tan δ of about 1% is used for removing these low-voltage noises and the like. However, when a voltage or current exceeding a certain limit is applied to such a semiconductor capacitor due to a surge or the like, the capacitance is reduced or destroyed, and the function as a capacitor is not fulfilled.

そこで最近になってSrTiO3を主成分とし、バリスタ特
性とコンデンサ特性の両方の機能を有するものが開発さ
れ、コンピュータなどの電子機器におけるIC,LSIはどの
半導体素子及び回路の保護や電子機器を相互につなぐケ
ーブルやコネクタなどから侵入するノイズの除去に利用
されている。
Therefore, recently, a device having SrTiO 3 as a main component and having both functions of a varistor characteristic and a capacitor characteristic has been developed, and ICs and LSIs in electronic devices such as computers are used to protect any semiconductor elements and circuits and to interconnect electronic devices. It is used to remove noise that intrudes from cables and connectors that connect to the computer.

発明が解決しようとする課題 前記のSrTiO3を主成分とするバリスタとコンデンサの
両方の機能を有する素子をコネクタなどから侵入するノ
イズの除去に使用する場合、素子の構成は一般的に第3
図のようになっている。第3図において、11及び12は電
極、13はSrTiO3を主成分とした電圧依存性非直線抵抗特
性を有する半導体セラミックからなる素子である。この
ような素子をコネクタに組み込むと、一般的に第4図の
ようになる。ところが第4図のような構成にすると、ピ
ン14と素子18の隙間に半田15の一部が流れ込み、見掛け
上の電極間距離が小さくなり、バリスタ電圧が低くな
り、バリスタ電圧に極性がつき、絶縁抵抗が低くなると
いった欠点を有していた。第4図において、16及び17は
電極、19は半田、20は共通端子である。
Problems to be Solved by the Invention When the above-described element having both functions of a varistor and a capacitor mainly composed of SrTiO 3 is used for removing noise invading from a connector or the like, the structure of the element is generally the third.
It looks like the figure. In FIG. 3, reference numerals 11 and 12 denote electrodes, and reference numeral 13 denotes an element made of a semiconductor ceramic having SrTiO 3 as a main component and having a voltage-dependent nonlinear resistance characteristic. When such an element is incorporated in a connector, it is generally as shown in FIG. However, with the configuration as shown in FIG. 4, part of the solder 15 flows into the gap between the pin 14 and the element 18, the apparent distance between the electrodes is reduced, the varistor voltage is reduced, and the varistor voltage is polarized. There was a disadvantage that the insulation resistance was low. In FIG. 4, 16 and 17 are electrodes, 19 is solder, and 20 is a common terminal.

そこで本発明では、ピンと素子の間の隙間に半田の一
部が流れ込んでもバリスタ電圧が変化せず、バリスタ電
圧に極性がつかず、絶縁抵抗が変化しない構成の素子を
提供することを目的とするものである。
In view of the above, an object of the present invention is to provide an element having a configuration in which the varistor voltage does not change even if a part of the solder flows into the gap between the pin and the element, the varistor voltage does not have polarity, and the insulation resistance does not change. Things.

課題を解決するための手段 この目的を達成するために本発明の電圧依存性非直線
抵抗体磁器素子は、中央部に貫通孔を有する円筒形状の
SrTiO3を主成分とする半導体セラミックと、この半導体
セラミックの両端面に外周が前記半導体セラミックの外
径よりも小さくかつ、内周が前記貫通孔と同じ径を有す
るように設けたドーナツ状の電極と、前記貫通孔の内周
面に前記ドーナツ状の電極と一体化するように設けた電
極と、前記半導体セラミックの外周面中央部に前記半導
体セラミックの両端面より等間隔の距離をあけて設けた
電極とを備えたことを特徴とするものである。
Means for Solving the Problems In order to achieve this object, a voltage-dependent nonlinear resistor porcelain element of the present invention has a cylindrical shape having a through hole in the center.
A semiconductor ceramic containing SrTiO 3 as a main component, and a donut-shaped electrode provided on both end surfaces of the semiconductor ceramic such that the outer circumference is smaller than the outer diameter of the semiconductor ceramic and the inner circumference has the same diameter as the through hole. An electrode provided on the inner peripheral surface of the through-hole so as to be integrated with the donut-shaped electrode; and an electrode provided at the center of the outer peripheral surface of the semiconductor ceramic at equal intervals from both end surfaces of the semiconductor ceramic. And an electrode.

作用 この構成によると、両端面と内周面に設けた電極は一
体化されているため、この電圧依存性非直線抵抗体磁器
素子を半田付けなどでコネクタ等に組み込んだ際、貫通
孔内に半田の一部が流れ込んでも、電極上に存在するた
め見掛け上の電極間距離は変化しない。従ってバリスタ
電圧は変化しないとともに極性も付かず、絶縁抵抗は変
化しないので、組み込む前後での電気特性の変化は極め
て小さく安定したものとなる。
Operation According to this configuration, since the electrodes provided on both end surfaces and the inner peripheral surface are integrated, when this voltage-dependent non-linear resistor porcelain element is incorporated into a connector or the like by soldering or the like, the voltage-dependent nonlinear resistor porcelain element is inserted into the through hole. Even if a part of the solder flows, the apparent distance between the electrodes does not change because it is present on the electrodes. Accordingly, the varistor voltage does not change, the polarity does not change, and the insulation resistance does not change. Therefore, the change in the electrical characteristics before and after the incorporation is extremely small and stable.

また半導体セラミックの両端面に設けた電極はその外
径が半導体セラミックの外径よりも小さいとともに、外
周面中央部に設けた電極は、半導体セラミック両端面よ
り等間隔の距離をあけて形成されているため、電極間の
表面絶縁距離が長くなり、課電寿命特性を改善すること
ができ信頼性が向上する。
The electrodes provided on both end surfaces of the semiconductor ceramic have an outer diameter smaller than the outer diameter of the semiconductor ceramic, and the electrodes provided at the center of the outer peripheral surface are formed at equal intervals from both end surfaces of the semiconductor ceramic. As a result, the surface insulation distance between the electrodes is increased, and the service life characteristics can be improved, thereby improving the reliability.

さらに半導体セラミック外周面中央部に設けた電極に
端子を接続する場合、この端子のこの電極との接続端部
の表面全体で半田付けできるため、端子と電圧依存性非
直線抵抗体磁器素子との接着強度が向上し、信頼性も向
上するとともに、例えばコネクタに組み込んだ場合、端
子が中央部に存在するため、端子上部の高さが電圧依存
性非直線抵抗体磁器素子の約半分となり、低背化するこ
とができる。
Furthermore, when a terminal is connected to an electrode provided at the center of the outer peripheral surface of the semiconductor ceramic, soldering can be performed on the entire surface of the connection end of the terminal with this electrode, so that the terminal and the voltage-dependent nonlinear resistor ceramic element can be connected to each other. The bonding strength is improved and the reliability is improved.For example, when the connector is incorporated in a connector, the height of the upper part of the terminal is about half that of the voltage-dependent nonlinear resistor porcelain element because the terminal is located at the center, and the low Can be tall.

さらにまた、本発明の電圧依存性非直線抵抗体磁器素
子は、前後左右が対称な構造であるため、方向性がな
く、コネクタ等に組み込む際、前後左右の判定が不要で
あり、組み立てて工数を削減することができる。
Furthermore, since the voltage-dependent nonlinear resistor porcelain element of the present invention has a symmetric structure in front, rear, left and right, it has no directionality, and when assembled into a connector or the like, it is not necessary to determine front, rear, left, and right. Can be reduced.

実施例 以下に実施例を挙げて本発明を具体的に説明する。ま
ず、SrCO3,CaCO3,BaCO3,MgCO3,TiO2を下記の第1表に示
すように組成比を種々変えて秤量し、ボールミルなどで
24Hr混合する。次に、乾燥した後、1050℃で4Hr焼成
し、再びボールミルなどで24Hr粉砕した後、乾燥し、第
1成分とする。次いで、第1成分,第2成分,第3成分
を下記の第1表に示した組成比になるように秤量し、ボ
ールミルなどで24Hr混合した後、乾燥し、ポリビニルア
ルコールなどの有機バインダーを10wt%添加して造粒し
た後、1(t/cm2)のプレス圧力で外径4mmφ,内径1.4m
mφ,高さ2.5mm tの円筒状に成形し、空気中で1100℃で
12Hr焼成し、脱バインダーする。次に、還元性雰囲気、
例えばN2:H2=9:1のガス中で1450℃で3Hr焼成する。さ
らにその後、酸化性雰囲気、例えば空気中で1020℃で6H
r焼成する。
Examples Hereinafter, the present invention will be described specifically with reference to examples. First, SrCO 3 , CaCO 3 , BaCO 3 , MgCO 3 , and TiO 2 were weighed at various composition ratios as shown in Table 1 below, and were weighed using a ball mill or the like.
Mix for 24 hours. Next, after being dried, it is baked at 1050 ° C. for 4 hours, crushed again by a ball mill or the like for 24 hours, and then dried to obtain a first component. Next, the first component, the second component, and the third component are weighed so as to have the composition ratios shown in Table 1 below, mixed for 24 hours by a ball mill or the like, dried, and dried with an organic binder such as polyvinyl alcohol by 10 wt. % And granulated after adding 1% (t / cm 2 ) with a pressing pressure of 1 (t / cm 2 )
mφ, 2.5mm t height, and molded at 1100 ℃ in air
Bake for 12 hours and remove binder. Next, a reducing atmosphere,
For example, firing is performed at 1450 ° C. for 3 hours in a gas of N 2 : H 2 = 9: 1. After that, 6H at 1020 ° C in an oxidizing atmosphere such as air
r Bake.

こうして得られた焼結体の両方の端面にAgなどの導電
性ペーストを用いて外周が前記円筒の外径よりも小さく
内周が貫通孔と同じ径のドーナツ状の電極を例えばスク
リーン印刷などにより設けるとともに、前記貫通孔の内
周面に電極を例えばローラー転写などの方法により設
け、前記ドーナツ状の電極と前記貫通孔の内周面の電極
を一体化する。また、前記円筒の中央部の外周面上に端
面より等間隔の距離をあけて対向する電極をを例えばロ
ーラー転写などの方法で設け、630℃,3minで焼成し、電
極を形成する。第1図はこのようにして得られた素子を
示し、1は円筒の内周面から両方の端面にわたり一体化
されて設けられた電極、2は円筒の中央部の外周面上に
設けられた電極,3はSrTiO3を主成分とした電圧依存性非
直線抵抗特性を有する半導体セラミックからなる素子で
あり、円筒の中央部に円筒状の貫通孔が形成されてい
る。次に、第2図に示したように半田5,半田9などによ
りピン4及び共通端子10を取り付け、ブタジエンゴムな
どの樹脂(図示せず)を充填する。第2図において、6
及び7は電極、8は素子である。このようにして得られ
た素子の特性を素子単品とコネクタ組み立て後について
下記の第2表に示す。
Using a conductive paste such as Ag on both end surfaces of the thus obtained sintered body, a donut-shaped electrode having an outer periphery smaller than the outer diameter of the cylinder and an inner periphery having the same diameter as the through hole is formed by, for example, screen printing. At the same time, an electrode is provided on the inner peripheral surface of the through hole by, for example, a roller transfer method, and the donut-shaped electrode and the electrode on the inner peripheral surface of the through hole are integrated. Further, electrodes facing each other are provided on the outer peripheral surface at the center of the cylinder at equal intervals from the end surface by, for example, a roller transfer method, and are fired at 630 ° C. for 3 minutes to form electrodes. FIG. 1 shows an element obtained in this way, 1 is an electrode provided integrally from the inner peripheral surface of the cylinder to both end surfaces, and 2 is provided on the outer peripheral surface at the center of the cylinder. The electrodes 3 are elements made of a semiconductor ceramic having SrTiO 3 as a main component and having a voltage-dependent nonlinear resistance characteristic, and a cylindrical through-hole is formed at the center of the cylinder. Next, as shown in FIG. 2, the pins 4 and the common terminal 10 are attached by solder 5, solder 9, and the like, and are filled with a resin (not shown) such as butadiene rubber. In FIG. 2, 6
And 7 are electrodes, and 8 is an element. The characteristics of the element thus obtained are shown in Table 2 below for the element alone and after assembling the connector.

なお、V1mAは1mAの電流を流した時に素子の両端にか
かる電圧であり、V1mAの極性は正方向のV1mAと負方向の
V1mAの差を正方向のV1mAで割った値であり、絶縁抵抗は
印加電圧12V.D.Cの時のピン4と共通端子10の間の絶縁
抵抗値である。
Note that V1mA is the voltage applied across the element when a current of 1mA flows, and the polarity of V1mA is V1mA in the positive direction and V1mA in the negative direction.
A value obtained by dividing the difference between V 1mA in the positive direction of V 1mA, the insulation resistance is the insulation resistance between the pin 4 and the common terminal 10 when the applied voltage 12V.DC.

また、第1成分のSrの一部をCa,Ba,Mgで置換する割合
は実施例では一部しか示さなかったが、素子の特性とし
てバリスタ特性とコンデンサ特性を同時に持つ範囲内で
あればどのようなものであっても構わない。さらに、第
2成分,第3成分は実施例では一部の組み合わせについ
てのみ示したが、素子の特性としてバリスタ特性をコン
デンサ特性を同時に持つ範囲内であればどのような成分
であっても構わない。また、電圧依存性非直線抵抗体磁
器素子に例えばフェライト,コイル,トロイダルコイル
などからなるインダクタンスを接続する構成にし、ノイ
ズ除去効果を改善することができる。
Although the ratio of replacing part of Sr of the first component with Ca, Ba, and Mg is only partially shown in the embodiment, any ratio within a range having both varistor characteristics and capacitor characteristics as element characteristics at the same time is shown. It may be something like this. Further, although the second component and the third component are shown only for some combinations in the embodiment, any components may be used as long as the varistor characteristic and the capacitor characteristic are simultaneously included in the element characteristics. . In addition, the voltage-dependent nonlinear resistor porcelain element is connected to an inductance composed of, for example, a ferrite, a coil, a toroidal coil, etc., so that the noise removing effect can be improved.

発明の効果 以上本発明によると、両端面と内周面に設けた電極は
一体化されているため、この電圧依存性非直線抵抗体磁
器素子を半田付けなどでコネクタ等に組み込んだ際、貫
通孔内の半田の一部が流れ込んでも、電極上に存在する
ため見掛け上の電極間距離は変化しない。従ってバリス
タ電圧は変化しないとともに極性も付かず、絶縁抵抗は
変化しないので、組み込む前後での電気特性の変化は極
めて小さく安定したものとなる。
Effect of the Invention According to the present invention, since the electrodes provided on both end surfaces and the inner peripheral surface are integrated, when this voltage-dependent nonlinear resistor porcelain element is incorporated into a connector or the like by soldering or the like, the Even if a part of the solder in the hole flows, the apparent distance between the electrodes does not change because it exists on the electrodes. Accordingly, the varistor voltage does not change, the polarity does not change, and the insulation resistance does not change. Therefore, the change in the electrical characteristics before and after the incorporation is extremely small and stable.

また半導体セラミックの両端面に設けた電極はその外
径が半導体セラミックの外径よりも小さいとともに、外
周面中央部に設けた電極は、半導体セラミック両端面よ
り等間隔の距離をあけて形成されているため、電極間の
表面絶縁距離が長くなり、課電寿命特性を改善すること
ができ信頼性が向上する。
The electrodes provided on both end surfaces of the semiconductor ceramic have an outer diameter smaller than the outer diameter of the semiconductor ceramic, and the electrodes provided at the center of the outer peripheral surface are formed at equal intervals from both end surfaces of the semiconductor ceramic. As a result, the surface insulation distance between the electrodes is increased, and the service life characteristics can be improved, thereby improving the reliability.

さらに半導体セラミック外周面中央部に設けた電極に
端子を接続する場合、この端子のこの電極との接続端部
の表面全体で半田付けできるため、端子と電圧依存性非
直線抵抗体磁器素子との接着強度が向上し、信頼性も向
上するとともに、例えばコネクタに組み込んだ場合、端
子が中央部に存在するため、端子上部の高さが電圧依存
性非直線抵抗体磁器素子の約半分となり、低背化するこ
とができる。
Furthermore, when a terminal is connected to an electrode provided at the center of the outer peripheral surface of the semiconductor ceramic, soldering can be performed on the entire surface of the connection end of the terminal with this electrode, so that the terminal and the voltage-dependent nonlinear resistor ceramic element can be connected to each other. The bonding strength is improved and the reliability is improved.For example, when the connector is incorporated in a connector, the height of the upper part of the terminal is about half that of the voltage-dependent nonlinear resistor porcelain element because the terminal is located at the center, and the low Can be tall.

さらにまた、本発明の電圧依存性非直性抵抗体磁器素
子は、前後左右が対称な構造であるため、方向性がな
く、コネクタ等に組み込む際、前後左右の判定が不要で
あり、組み立て工数を削減することができる。
Furthermore, the voltage-dependent non-inductive resistor porcelain element of the present invention has a symmetric structure in front, rear, left and right, so it has no directionality, and when assembled into a connector or the like, it is unnecessary to determine front, rear, left and right, and the number of assembly steps is reduced. Can be reduced.

【図面の簡単な説明】[Brief description of the drawings]

第1図は本発明による素子を示す断面図、第2図は本発
明による素子をコネクタに組み立てた時の断面図、第3
図は従来例による素子を示す断面図、第4図は従来例に
よる素子をコネクタに組み立てた時の断面図である。 1,2,6,7……電極、3,8……素子、4……ピン、5,9……
半田、10……共通端子。
FIG. 1 is a sectional view showing an element according to the present invention, FIG. 2 is a sectional view when the element according to the present invention is assembled into a connector, and FIG.
FIG. 4 is a cross-sectional view showing an element according to a conventional example, and FIG. 4 is a cross-sectional view when the element according to the conventional example is assembled into a connector. 1,2,6,7 ... electrode, 3,8 ... element, 4 ... pin, 5,9 ...
Solder, 10 common terminal.

Claims (2)

(57)【特許請求の範囲】(57) [Claims] 【請求項1】中央部に貫通孔を有する円筒形状のSrTiO3
を主成分とする半導体セラミックと、この半導体セラミ
ックの両端面に外周が前記半導体セラミックの外径より
も小さくかつ、内周が前記貫通孔と同じ径を有するよう
に設けたドーナツ状の電極と、前記貫通孔の内周面に前
記ドーナツ状の電極と一体化するように設けた電極と、
前記半導体セラミックの外周面中央部に前記半導体セラ
ミックの両端面より等間隔の距離をあけて設けた電極と
を備えたことを特徴とする電圧依存性非直線抵抗体磁器
素子。
1. A cylindrical SrTiO 3 having a through hole in the center.
And a doughnut-shaped electrode provided on both end surfaces of the semiconductor ceramic such that the outer circumference is smaller than the outer diameter of the semiconductor ceramic and the inner circumference has the same diameter as the through hole. An electrode provided on the inner peripheral surface of the through hole so as to be integrated with the donut-shaped electrode,
A voltage-dependent non-linear resistor porcelain element, comprising: an electrode provided at the center of the outer peripheral surface of the semiconductor ceramic at an equal distance from both end surfaces of the semiconductor ceramic.
【請求項2】主成分のSrの一部をCa,Ba,Mgのうち少なく
とも一つ以上の元素で置換したことを特徴とする請求項
1記載の電圧依存性非直線抵抗体磁器素子。
2. The voltage-dependent nonlinear resistor porcelain element according to claim 1, wherein a part of Sr as a main component is replaced with at least one element of Ca, Ba and Mg.
JP2276968A 1990-10-15 1990-10-15 Voltage-dependent nonlinear resistor porcelain element Expired - Fee Related JP2871060B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2276968A JP2871060B2 (en) 1990-10-15 1990-10-15 Voltage-dependent nonlinear resistor porcelain element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2276968A JP2871060B2 (en) 1990-10-15 1990-10-15 Voltage-dependent nonlinear resistor porcelain element

Publications (2)

Publication Number Publication Date
JPH04151805A JPH04151805A (en) 1992-05-25
JP2871060B2 true JP2871060B2 (en) 1999-03-17

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Country Link
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Also Published As

Publication number Publication date
JPH04151805A (en) 1992-05-25

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