JP3003361B2 - Voltage-dependent nonlinear resistor porcelain element - Google Patents

Voltage-dependent nonlinear resistor porcelain element

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Publication number
JP3003361B2
JP3003361B2 JP4050294A JP5029492A JP3003361B2 JP 3003361 B2 JP3003361 B2 JP 3003361B2 JP 4050294 A JP4050294 A JP 4050294A JP 5029492 A JP5029492 A JP 5029492A JP 3003361 B2 JP3003361 B2 JP 3003361B2
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JP
Japan
Prior art keywords
voltage
electrode
cylinder
dependent
diameter
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP4050294A
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Japanese (ja)
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JPH05251215A (en
Inventor
慶一 野井
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Corp
Panasonic Holdings Corp
Original Assignee
Panasonic Corp
Matsushita Electric Industrial Co Ltd
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Priority to JP4050294A priority Critical patent/JP3003361B2/en
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Publication of JP3003361B2 publication Critical patent/JP3003361B2/en
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Expired - Fee Related legal-status Critical Current

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Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【産業上の利用分野】本発明は電気機器や電子機器で発
生する異常高電圧、ノイズ、静電気などから機器の半導
体および回路を保護するためのコンデンサ特性とバリス
タ特性を有する電圧依存性非直線抵抗体磁器素子に関す
る。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a voltage-dependent non-linear resistor having a capacitor characteristic and a varistor characteristic for protecting a semiconductor and a circuit of a device from abnormal high voltage, noise, static electricity, etc. generated in an electric device or an electronic device. It relates to a body porcelain element.

【0002】[0002]

【従来の技術】従来、各種の電気機器や電子機器におけ
る異常高電圧の吸収、ノイズの除去、火花消去、静電気
対策のために電圧依存性非直線抵抗特性を有するSiC
バリスタや、ZnO系バリスタなどが使用されている。
このようなバリスタの電圧−電流特性は近似的に次式の
ように表すことができる。
2. Description of the Related Art Conventionally, SiC having a voltage-dependent non-linear resistance characteristic for absorbing abnormal high voltage, eliminating noise, eliminating sparks, and taking measures against static electricity in various electric and electronic devices.
Varistors and ZnO-based varistors are used.
The voltage-current characteristics of such a varistor can be approximately expressed by the following equation.

【0003】[0003]

【数1】 (Equation 1)

【0004】ここで、Iは電流、Vは電圧、Cはバリス
タ固有の定数、αは電圧−電流非直線指数である。
Here, I is a current, V is a voltage, C is a constant unique to a varistor, and α is a voltage-current nonlinear exponent.

【0005】SiCバリスタのαは2〜7で、ZnO系
バリスタではαが50にもおよぶものがある。このよう
なバリスタは比較的高い電圧の吸収には優れた性能を有
しているが、誘電率が低く、固有の静電容量が小さいた
めバリスタ電圧以下の比較的低い電圧の吸収にはほとん
ど効果を示さず、また誘電損失tanδが5〜10%と
大きい。
[0005] α of a SiC varistor is 2 to 7, and α of some ZnO-based varistors reaches 50. Such varistors have excellent performance in absorbing relatively high voltage, but have little effect on absorbing relatively low voltage below varistor voltage due to low dielectric constant and small inherent capacitance. And the dielectric loss tan δ is as large as 5 to 10%.

【0006】一方、これらの低電圧のノイズなどの除去
には見かけの誘電率が5×104程度で、tanδが1
%前後の半導体コンデンサが利用されている。しかし、
このような半導体コンデンサはサージなどによりある限
度以上の電圧または電流が印加されると静電容量が減少
したり破壊したりしてコンデンサとしての機能を果たさ
なくなる。
On the other hand, to remove these low-voltage noises and the like, the apparent dielectric constant is about 5 × 10 4 and tan δ is 1
% Of semiconductor capacitors are used. But,
When a voltage or current exceeding a certain limit is applied to such a semiconductor capacitor due to a surge or the like, the capacitance is reduced or destroyed, so that the semiconductor capacitor cannot function as a capacitor.

【0007】そこで最近になってSrTiO3を主成分
とし、バリスタ特性とコンデンサ特性の両方の特性を有
するものが開発され、コンピュータなどの電子機器にお
けるIC,LSIなどの半導体素子および回路の保護や
電子機器を相互に継ぐケーブルやコネクタなどから侵入
するノイズの除去に利用されている。
[0007] Therefore, recently, a device having SrTiO 3 as a main component and having both varistor characteristics and capacitor characteristics has been developed. It is used to remove noise that enters from cables and connectors that connect devices to each other.

【0008】以下にSrTiO3を主成分とするバリス
タとコンデンサの両方の特性を有する従来の電圧依存性
非抵抗体磁器素子について説明する。
A conventional voltage-dependent non-resistive ceramic element having both characteristics of a varistor and a capacitor mainly composed of SrTiO 3 will be described below.

【0009】図3に示すように、コネクタなどから侵入
するノイズの除去に使用する電圧依存性非抵抗体磁器素
子10は、SrTiO3を主成分とした電圧依存性非直
線抵抗特性を有する半導体セラミックからなる円筒形の
素子11の上面と下面に電極12と電極13を配設した
ものである。
As shown in FIG. 3, a voltage-dependent non-resistive porcelain element 10 used for removing noise entering from a connector or the like is a semiconductor ceramic having a voltage-dependent non-linear resistance characteristic mainly composed of SrTiO 3. An electrode 12 and an electrode 13 are provided on the upper and lower surfaces of a cylindrical element 11 made of.

【0010】図4に示すように、電圧依存性非抵抗体磁
器素子10をコネクタに組み込むとき、導電性接着剤1
6および17でピン15と素子11の電極12および共
通端子14と素子11の電極13をそれぞれ接着する。
このとき、ピン15と素子11の隙間に導電性接着剤1
6の一部が流れ込むことがある。
As shown in FIG. 4, when the voltage-dependent non-resistive porcelain element 10 is incorporated in a connector, the conductive adhesive 1
At pins 6 and 17, the pin 15 and the electrode 12 of the element 11 and the common terminal 14 and the electrode 13 of the element 11 are bonded, respectively.
At this time, the conductive adhesive 1 is inserted into the gap between the pin 15 and the element 11.
6 may flow in.

【0011】[0011]

【発明が解決しようとする課題】上述のように従来の構
成では、ピン15と素子11の隙間に導電性接着剤16
の一部が流れ込み、見掛け上の電極間距離が小さくな
り、バリスタ電圧が低くなり、バリスタ電圧に極性がつ
き、絶縁抵抗が低くなるという問題点を有していた。
As described above, in the conventional configuration, the conductive adhesive 16 is provided in the gap between the pin 15 and the element 11.
Has a problem that the apparent distance between the electrodes decreases, the varistor voltage decreases, the varistor voltage becomes polar, and the insulation resistance decreases.

【0012】本発明は、上記従来の問題点を解決するも
のでピンと素子の間の隙間に導電性接着剤の一部が流れ
込んでも、バリスタ電圧が変化せず、バリスタ電圧に極
性がつかず、絶縁抵抗が変化しない電圧依存性非直線抵
抗体磁器素子を提供することを目的とする。
The present invention solves the above-mentioned conventional problems. Even if a part of the conductive adhesive flows into the gap between the pin and the element, the varistor voltage does not change and the varistor voltage does not have polarity. An object of the present invention is to provide a voltage-dependent nonlinear resistor porcelain element whose insulation resistance does not change.

【0013】[0013]

【課題を解決するための手段】この目的を達成するため
に本発明の電圧依存性非直線抵抗体磁器素子は、中心部
に円筒状の貫通孔と同軸上で外周径が異なる2つの円筒
とその2つの円筒の境界平面とを有し、かつ、前記円
筒の大きい径の方の長さが小さい径の方の長さよりも短
い形状でSrTiO 3 を主成分とした電圧依存性非直線
抵抗特性を有する半導体セラミックと、この半導体セラ
ミックの前記貫通孔の内周全面に配設した内周電極と、
前記小さい径の円筒の外周全面に配設した別の電極と、
前記境界の平面上に配設すると共に前記外周全面に配設
した電極と導電性接着剤を用いて電気的に接続される共
通端子と、前記貫通孔を貫通させて導電性接着剤により
前記内周全面に設けた電極と電気的に接続するピンとを
備えたものである。
In order to achieve this object, a voltage-dependent nonlinear resistor porcelain element according to the present invention comprises a cylindrical through-hole at the center and two coaxial cylinders having different outer diameters on the same axis. The plane of the boundary between the two cylinders and the circle
The length of the larger diameter of the cylinder is shorter than the length of the smaller diameter
Voltage-dependent non-linear shape mainly composed of SrTiO 3
A semiconductor ceramic having a resistance characteristic;
An inner circumferential electrode disposed on the entire inner circumferential surface of the through hole of Mick,
Another electrode disposed on the entire outer periphery of the small diameter cylinder,
Disposed on the plane of the boundary and disposed on the entire outer periphery
And an electrode that is electrically connected using a conductive adhesive.
Through terminal and the conductive adhesive through the through hole.
An electrode provided on the entire inner circumference and a pin for electrical connection
It is provided.

【0014】[0014]

【作用】この構成によると、半導体セラミックの内周全
面に配設した電極が一つの電極として一体化されている
ので、例えピンと半導体セラミックの隙間に導電性接着
剤が流れ込んだとしても電極間距離は変化しない。
た、半導体セラミックの小さい径の円筒外周面に設けた
電極と共通端子とを接続する際に、余分な導電性接着剤
のたれを大きい径の円筒で止めることができるので、電
極間距離は変化しないこととなる。仮に大きい径の円筒
の外周に導電性接着剤が垂れ込んだとしても外周面に設
けた電極から離れる方向に垂れ込むこととなるので見掛
け電極間距離は変化しない。 また全体が円筒形で一方の
端部が他方の端部より大きい径の円筒としているので、
表面絶縁距離を広く取ることができる。 さらに共通端子
と、半導体セラミックの小さい径の円筒外周面に設けた
電極との接続が容易になるとともに接着強度も大きくす
ることができる。 従ってバリスタ電圧が低くなったり、
極性が付いて絶縁抵抗が低くなるのを防止することがで
き、課電寿命特性などの電気特性に優れた電圧依存性非
直線抵抗体磁器素子となる。
According to this structure , the entire inner circumference of the semiconductor ceramic is
The electrodes arranged on the surface are integrated as one electrode
So, for example, conductive adhesion in the gap between the pin and the semiconductor ceramic
Even if the agent flows, the distance between the electrodes does not change. Ma
Also, provided on the outer peripheral surface of a small diameter cylinder of semiconductor ceramic
When connecting the electrode and the common terminal, use extra conductive adhesive
The sag can be stopped by a large-diameter cylinder.
The distance between the poles will not change. A cylinder with a large diameter
Even if the conductive adhesive drips around the outer periphery of the
Because it will hang in the direction away from the electrode
The distance between the electrodes does not change. The whole is cylindrical and one
Because the end is a cylinder with a larger diameter than the other end,
The surface insulation distance can be widened. Further common terminal
And provided on the outer peripheral surface of a small diameter cylinder of semiconductor ceramic
Easier connection to electrodes and higher adhesive strength
Can be Therefore, the varistor voltage decreases,
This prevents the insulation resistance from lowering due to the polarity.
Voltage-dependent voltage
It becomes a linear resistor porcelain element.

【0015】[0015]

【実施例】【Example】

(実施例1)以下本発明の第1の実施例について説明す
る。
(Embodiment 1) Hereinafter, a first embodiment of the present invention will be described.

【0016】SrCO3,CaCO3,BaCO3,Mg
CO3,TiO2を(表1)に示すように組成比を種々変
えて秤量し、ボールミルなどで24時間混合する。次
に、乾燥した後、1050℃で4時間焼成し、再びボー
ルミルなどで24時間粉砕した後乾燥し第1成分とす
る。
SrCO 3 , CaCO 3 , BaCO 3 , Mg
CO 3 and TiO 2 are weighed at various composition ratios as shown in Table 1 and mixed by a ball mill or the like for 24 hours. Next, after drying, it is fired at 1050 ° C. for 4 hours, crushed again by a ball mill or the like for 24 hours, and dried to obtain a first component.

【0017】[0017]

【表1】 [Table 1]

【0018】次に、第1成分、第2成分、第3成分を下
記の(表1)に示した組成比になるように秤量し、ボー
ルミルなどで24時間混合した後、乾燥し、ポリビニル
アルコールなどの有機バインダーを10重量%添加して
造粒した後、1(t/cm2)のプレス圧力で円筒の外周
径が小さい部分は外径4mmφ、内径1.4mmφ、高さ
2.5mm、円筒の外周径が大きい部分は外径6mmφ、内
径1.4mmφ、高さ0.5mmの円筒状に成形し、空気中
で1200℃で10時間焼成し脱バインダーする。次
に、還元性雰囲気たとえばN2:H2=9:1のガス中で
1425℃で5時間焼成する。
Next, the first, second and third components are weighed so as to have the composition ratios shown in the following (Table 1), mixed for 24 hours in a ball mill or the like, dried, and dried with polyvinyl alcohol. After adding 10% by weight of an organic binder such as the above and granulating, at a pressing pressure of 1 (t / cm 2 ), the portion where the outer diameter of the cylinder is small is 4 mm in outer diameter, 1.4 mm in inner diameter, 2.5 mm in height, The portion having a large outer diameter of the cylinder is formed into a cylindrical shape having an outer diameter of 6 mmφ, an inner diameter of 1.4 mmφ, and a height of 0.5 mm, and is fired in air at 1200 ° C. for 10 hours to remove the binder. Next, firing is performed at 1425 ° C. for 5 hours in a reducing atmosphere, for example, a gas of N 2 : H 2 = 9: 1.

【0019】さらにその後、酸化性雰囲気例えば空気中
で1120℃で5時間焼成する。こうして得られた素体
の内周面にZnなどからなる導電性オーミックペースト
を例えばローラー転写などの方法により配設し、円筒の
外周径が小さい部分の外周面全体にZnなどからなる導
電性オーミックペーストを例えばローラー転写などの方
法により配設する。その後120℃で10分間乾燥さ
せ、さらにその上から非オーミック性の導電性ペースト
を同様にしてローラー転写などの方法により設け、12
0℃で10分間乾燥させ、630℃で3分間焼成し、図
1に示すように素子3に電極1と電極2を配設した電圧
依存性抵抗体磁器素子4を形成する。
Thereafter, firing is performed at 1120 ° C. for 5 hours in an oxidizing atmosphere such as air. A conductive ohmic paste made of Zn or the like is disposed on the inner peripheral surface of the element body thus obtained by a method such as roller transfer, and a conductive ohmic paste made of Zn or the like is formed on the entire outer peripheral surface of the portion where the outer diameter of the cylinder is small. The paste is provided by a method such as roller transfer. Thereafter, the paste is dried at 120 ° C. for 10 minutes, and a non-ohmic conductive paste is similarly provided thereon by a method such as roller transfer.
After drying at 0 ° C. for 10 minutes and baking at 630 ° C. for 3 minutes, a voltage-dependent resistor porcelain element 4 in which the electrode 1 and the electrode 2 are arranged on the element 3 as shown in FIG. 1 is formed.

【0020】次に図2に示すように、導電性接着剤5お
よび導電性接着剤8によりピン6および共通端子9を取
り付け、ブタジエンゴムなどの樹脂(図示せず)を充填
し硬化する。
Next, as shown in FIG. 2, the pins 6 and the common terminals 9 are attached with the conductive adhesive 5 and the conductive adhesive 8, and a resin (not shown) such as butadiene rubber is filled and cured.

【0021】(実施例2)第1の実施例と同様にして得
た素子の、内周面にZnなどからなる導電性オーミック
ペーストを例えばローラー転写などの方法により配設
し、円筒の外周径が小さい部分の外周面全体にZnなど
からなる導電性オーミックペーストを例えばローラー転
写などの方法により設けた後、120℃で10分間乾燥
させ、630℃で3分間焼成する。次に、弱酸などによ
り導電部分を活性化し、無電解により活性化した部分に
のみCuめっき、Niめっきを施し、さらにその上に電
解半田めっきをし、三層構造にした電極1と電極2とす
る。次に図2に示した第1の実施例と同様に半田などの
導電性接着剤5,8によりピン6および共通端子9を取
り付け、ブタジエンゴムなどの樹脂を充填し、加熱硬化
する。このようにして得られた電圧依存性抵抗体磁器素
子の素子単品とコネクタ組み立て後の電気特性をそれぞ
れ(表2)と(表3)に示す。
(Embodiment 2) A conductive ohmic paste made of Zn or the like is provided on the inner peripheral surface of the element obtained in the same manner as in the first embodiment by, for example, a roller transfer method. A conductive ohmic paste made of Zn or the like is provided on the entire outer peripheral surface of the portion having a small particle size by, for example, a roller transfer method, and then dried at 120 ° C. for 10 minutes and baked at 630 ° C. for 3 minutes. Next, the conductive part is activated by a weak acid or the like, and Cu plating and Ni plating are applied only to the part activated by electroless, and then electrolytic solder plating is further performed thereon to form a three-layer electrode 1 and an electrode 2. I do. Next, similarly to the first embodiment shown in FIG. 2, the pins 6 and the common terminals 9 are attached by the conductive adhesives 5, 8 such as solder, filled with a resin such as butadiene rubber, and cured by heating. The electrical characteristics of the thus obtained voltage-dependent resistor ceramic element alone and after assembling the connector are shown in (Table 2) and (Table 3), respectively.

【0022】[0022]

【表2】 [Table 2]

【0023】[0023]

【表3】 [Table 3]

【0024】(表2)および(表3)のV1mAは、1m
Aの電流を流したときに素子の両端にかかる電圧であ
り、V1mAの極性は、正方向のV1mAと負方向のV1mA
差を正方向のV1mAで割った値であり、絶縁抵抗は、印
加電圧12VDCの時のピン6と共通端子9の間の絶縁
抵抗値である。この(表2),(表3)から明らかなよ
うに、本実施例による電圧依存性非直線抵抗体磁器素子
は、V1mAの極性および絶縁抵抗の点で従来例に比して
優れた効果が得られる。
V 1mA in Tables 2 and 3 is 1 m
A voltage across the element when current flows in the A, the polarity of V 1mA is a value obtained by dividing the difference between the positive direction of V 1mA and the negative direction of the V 1mA in the positive direction of V 1mA, insulation The resistance is an insulation resistance value between the pin 6 and the common terminal 9 when the applied voltage is 12 VDC. As is clear from Tables 2 and 3, the voltage-dependent nonlinear resistor porcelain element according to the present embodiment is superior to the conventional example in terms of the polarity of V1 mA and the insulation resistance. Is obtained.

【0025】また第1成分のSrの一部をCa,Ba,
Mgで置換する割合は実施例では一部しか示さなかった
が、素子の特性としてバリスタ特性とコンデンサ特性を
同時に持つ範囲内であればどのようなものであってもか
まわない。また第2成分、第3成分は実施例では一部の
組み合わせについてのみ示したが素子の特性としてバリ
スタ特性とコンデンサ特性を同時に持つ範囲内であれば
どのような成分であってもかまわない。また、オーミッ
ク性の電極としてはZn以外にAg,Cu,Niなどが
あるが、これら以外でも素子と電極との界面でオーミッ
ク接続がとれるものであればどのようなものであっても
かまわない。また、めっきする方法は電解でも無電解で
もかまわないし、酸性めっきでも塩基性めっきでも中性
めっきでもかまわない。また本実施例ではめっきの組み
合わせについては一部についてのみ示したが、同様の効
果が得られるものであればどのような組み合わせでもか
まわない。また電圧依存性非直線抵抗体磁器素子にたと
えばフェライト、コイル、トロイダルコイルなどからな
るインダクタンスを接続する構成にすることにより、ノ
イズ除去効果を改善することができる。
A part of the first component Sr is Ca, Ba,
Although only a part of the ratio of substitution with Mg is shown in the embodiment, any ratio may be used as long as the characteristics of the element are within a range having both varistor characteristics and capacitor characteristics at the same time. In the embodiment, the second component and the third component are shown only for some combinations. However, any components may be used as long as the components have a varistor characteristic and a capacitor characteristic at the same time. As the ohmic electrode, there are Ag, Cu, Ni, etc. other than Zn, but any other electrode may be used as long as an ohmic connection can be made at the interface between the element and the electrode. The plating method may be electrolytic or non-electrolytic, and may be acidic plating, basic plating, or neutral plating. In this embodiment, only some of the combinations of plating are shown, but any combination may be used as long as the same effect can be obtained. Further, the noise removing effect can be improved by connecting the voltage-dependent nonlinear resistor porcelain element to an inductance composed of, for example, a ferrite, a coil, a toroidal coil, or the like.

【0026】以上のように本実施例によれば、全体が円
筒形で円筒の一方の端部が他の部分より大きい径の円筒
化をなし、大きい径の円筒の長さが小さい径の円筒の長
さよりも短く、全体の円筒の中央部に円筒状の貫通孔を
有するように形成し、貫通孔の内周面全体に電極1を配
設し、外周径が小さい円筒の外周面全体に電極2を配設
することにより、円筒の内周の電極1が一つの電極とし
て一体化されるため、ピン6と素子3の隙間に半田など
の導電性接着剤5が流れ込んでも一体化された電極1の
上であるため、見掛けの電極間距離は変化しない。した
がって電気的特性は安定で、バリスタ電圧は変化せず、
バリスタ電圧に極性はつかず、絶縁抵抗は変化しない。
As described above, according to this embodiment, the entire cylinder is cylindrical, and one end of the cylinder is formed into a cylinder having a diameter larger than that of the other part, and the cylinder having the large diameter has a small diameter. Is formed to have a cylindrical through-hole at the center of the entire cylinder, and the electrode 1 is disposed on the entire inner peripheral surface of the through-hole. By disposing the electrode 2, the electrode 1 on the inner circumference of the cylinder is integrated as one electrode, so that the electrode 1 is integrated even if the conductive adhesive 5 such as solder flows into the gap between the pin 6 and the element 3. Since it is on the electrode 1, the apparent distance between the electrodes does not change. Therefore, the electrical characteristics are stable, the varistor voltage does not change,
The varistor voltage has no polarity and the insulation resistance does not change.

【0027】また、共通端子9を電極2に半田などの導
電性接着剤8で接続するとき、接続が容易で接着力が大
きくできるとともに余分な半田などの導電性接着剤8の
たれを大きい径の円筒の部分で止めることにより、見掛
けの電極間距離は変化しないようにすることができる。
また大きい径の円筒の外周に半田などの導電性接着剤8
がたれ込んでも電極1から離れる方向にたれ込むことか
ら、見掛けの電極間距離は変化しない。また全体が円筒
形で円筒の一方の端部が他の部分より大きい径の円筒と
しているので、表面絶縁距離を広くとることができるた
め電気的特性は安定で、バリスタ電圧は変化せず、バリ
スタ電圧に極性はつかず、絶縁抵抗は変化せず、素子を
コネクタに組み立てても組み立て前後の特性の変化は極
めて小さく安定になるという効果が得られ、課電寿命特
性を改善することができ、信頼性を向上させることがで
きる。また電極1、電極2、共通端子9の最上層を半田
めっきにすることにより、例えばピン6と電極1の隙間
や電極2と共通端子9の隙間を小さくしておけば、導電
性接着剤5,8がなくても加熱処理するだけで電極1、
電極2、共通端子9の最上層の半田めっきが互いに溶融
して接続させることができる。また素子3の電気的特性
を十分に引き出すためにはCuめっき、Niめっき、C
rめっき、Snめっき、Pbめっき、Auめっき、Ag
めっき、Pdめっき、半田めっきのうち一つまたは複数
の種類を重ねた電極とすることにより、素子と電極の界
面にバリヤーを形成することなく素子の電気的特性を十
分に引き出すことができ、半田付けが容易にでき、複数
の種類の多層めっき構造にすることにより半田耐熱性を
向上させることができる。
When the common terminal 9 is connected to the electrode 2 with a conductive adhesive 8 such as solder, the connection is easy, the adhesive force can be increased, and the excess amount of the conductive adhesive 8 such as solder can be reduced by a large diameter. By stopping at the cylindrical portion, the apparent distance between the electrodes can be kept unchanged.
A conductive adhesive 8 such as solder is applied to the outer periphery of the cylinder having a large diameter.
The apparent distance between the electrodes does not change, because even if it falls, it falls in the direction away from the electrode 1. Also, since the whole is cylindrical and one end of the cylinder is larger in diameter than the other parts, the surface insulation distance can be widened, so the electrical characteristics are stable, the varistor voltage does not change, and the varistor does not change. The polarity is not applied to the voltage, the insulation resistance does not change, and even if the element is assembled into a connector, the effect that the change in characteristics before and after assembling is extremely small and the effect is stabilized, and the application life characteristic can be improved, Reliability can be improved. Further, by forming the uppermost layer of the electrodes 1, 2 and the common terminal 9 by solder plating, for example, if the gap between the pin 6 and the electrode 1 or the gap between the electrode 2 and the common terminal 9 is reduced, the conductive adhesive 5 , 8 without heat treatment, only electrode 1,
The uppermost solder plating of the electrode 2 and the common terminal 9 can be melted and connected to each other. In order to sufficiently bring out the electrical characteristics of the element 3, Cu plating, Ni plating, C
r plating, Sn plating, Pb plating, Au plating, Ag
By forming one or more of the electrodes of plating, Pd plating, and solder plating on top of one another, the electrical characteristics of the element can be sufficiently obtained without forming a barrier at the interface between the element and the electrode. It can be easily attached, and the solder heat resistance can be improved by using a plurality of types of multilayer plating structures.

【0028】また、素子の形状を円筒状にすることによ
り素子の長さは長くなるが、素子の半径方向には寸法を
小さくできるためコネクタのピン間隔を小さくすること
が可能で、コネクタを小型化するのに有効である。また
共通端子9を素子3の中間部の電極に接続することによ
り、共通端子9からはみでる高さを低くすることがで
き、高さ方向の小型化も可能になる。
Although the length of the element is increased by making the element a cylindrical shape, the dimension of the element in the radial direction can be reduced, so that the pin interval of the connector can be reduced, and the connector can be reduced in size. It is effective to convert. In addition, by connecting the common terminal 9 to the electrode at the intermediate portion of the element 3, the height protruding from the common terminal 9 can be reduced, and the height can be reduced.

【0029】[0029]

【発明の効果】以上本発明によると、半導体セラミック
の内周全面に配設した電極が一つの電極として一体化さ
れているので、例えピンと半導体セラミックの隙間に導
電性接着剤が流れ込んだとしても電極間距離は変化しな
い。 また、半導体セラミックの小さい径の円筒外周面に
設けた電極と共通端子とを接続する際に、余分な導電性
接着剤のたれを大きい径の円筒で止めることができるの
で、電極間距離は変化しないこととなる。仮に大きい径
の円筒の外周に導電性接着剤が垂れ込んだとしても外周
面に設けた電極から離れる方向に垂れ込むこととなるの
で見掛けの電極間距離は変化しない。 また、全体が円筒
形で一方の端部が他方の端部より大きい径の円筒として
いるので、表面絶縁距離を広く取ることができる。 さら
に共通端子と、半導体セラミックの小さい径の円筒外周
面に設けた電極との接続が容易になるとともに接着強度
も大きくすることができる。 従ってバリスタ電圧が低く
なったり、極性が付いて絶縁抵抗が低くなるのを防止す
ることができ、課電寿命特性などの電気特性に優れた電
圧依存性非直線抵抗体磁器素子となる。
According to the present invention, the semiconductor ceramic
The electrodes arranged on the entire inner circumference of the
Are inserted in the gap between the pin and the semiconductor ceramic.
Even if the conductive adhesive flows in, the distance between the electrodes does not change.
No. Also, on the outer peripheral surface of a small diameter cylinder of semiconductor ceramic
When connecting the provided electrode to the common terminal,
You can stop the dripping of the adhesive with a large diameter cylinder
Thus, the distance between the electrodes does not change. Temporarily large diameter
Even if the conductive adhesive drips around the outer circumference of the cylinder
Will hang down in the direction away from the electrodes on the surface.
Thus, the apparent distance between the electrodes does not change. Also, the whole is cylindrical
As a cylinder with one end larger in diameter than the other
Therefore, the surface insulation distance can be widened. Further
And a common terminal and the outer circumference of a small diameter ceramic semiconductor cylinder
Connection with the electrode provided on the surface becomes easy and the adhesive strength
Can also be increased. Therefore, the varistor voltage is low
To prevent insulation resistance from dropping due to
That have excellent electrical characteristics such as
It becomes a pressure-dependent nonlinear resistor porcelain element.

【図面の簡単な説明】[Brief description of the drawings]

【図1】本発明の一実施例の電圧依存性非直線抵抗体磁
器素子の断面図
FIG. 1 is a sectional view of a voltage-dependent nonlinear resistor porcelain element according to an embodiment of the present invention.

【図2】同電圧依存性非直線抵抗体磁器素子をコネクタ
に接続したときの断面略図
FIG. 2 is a schematic sectional view when the voltage-dependent nonlinear resistor porcelain element is connected to a connector.

【図3】従来の電圧依存性非直線抵抗体磁器素子の断面
FIG. 3 is a cross-sectional view of a conventional voltage-dependent nonlinear resistor porcelain element.

【図4】同電圧依存性非直線抵抗体磁器素子をコネクタ
に接続したときの断面略図
FIG. 4 is a schematic cross-sectional view when the voltage-dependent nonlinear resistor porcelain element is connected to a connector.

【符号の説明】[Explanation of symbols]

1 電極 2 電極 3 素子 1 electrode 2 electrodes 3 elements

Claims (1)

(57)【特許請求の範囲】(57) [Claims] 【請求項1】 中心部に円筒状の貫通孔と同軸上で外周
径が異なる2つの円筒とその2つの円筒の境界平面と
を有し、かつ、前記円筒の大きい径の方の長さが小さい
径の方の長さよりも短い形状でSrTiO3を主成分と
した電圧依存性非直線抵抗特性を有する半導体セラミッ
と、この半導体セラミックの前記貫通孔の内周全面に
配設した電極と、前記小さい径の円筒の外周全面に配設
した別の電極と、前記境界の平面上に配設すると共に前
記外周全面に配設した電極と導電性接着剤を用いて電気
的に接続される共通端子と、前記貫通孔を貫通させて導
電性接着剤により前記内周全面に設けた電極と電気的に
接続するピンとを備えた電圧依存性非直線抵抗体磁器素
子。
At the center, there are two cylindrical cylinders having different outer diameters coaxially with a cylindrical through hole at the center and a plane at the boundary between the two cylinders, and the length of the larger diameter of the cylinder a semiconductor ceramic having a voltage-dependent nonlinear resistance characteristics mainly composed of SrTiO 3 in a shorter form than the length in the direction of smaller diameter, the electrode disposed on the inner peripheral entire surface of the through-hole of the semiconductor ceramic, Another electrode disposed on the entire outer periphery of the small diameter cylinder, and another electrode disposed on the plane of the boundary and
The electrodes are placed on the entire outer circumference and the electricity is
And a common terminal that is electrically connected to
It electrically connects with the electrode provided on the entire inner circumference by the electrically conductive adhesive.
Voltage-dependent non-linear resistor porcelain element comprising a connecting pin .
JP4050294A 1992-03-09 1992-03-09 Voltage-dependent nonlinear resistor porcelain element Expired - Fee Related JP3003361B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4050294A JP3003361B2 (en) 1992-03-09 1992-03-09 Voltage-dependent nonlinear resistor porcelain element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4050294A JP3003361B2 (en) 1992-03-09 1992-03-09 Voltage-dependent nonlinear resistor porcelain element

Publications (2)

Publication Number Publication Date
JPH05251215A JPH05251215A (en) 1993-09-28
JP3003361B2 true JP3003361B2 (en) 2000-01-24

Family

ID=12854886

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4050294A Expired - Fee Related JP3003361B2 (en) 1992-03-09 1992-03-09 Voltage-dependent nonlinear resistor porcelain element

Country Status (1)

Country Link
JP (1) JP3003361B2 (en)

Also Published As

Publication number Publication date
JPH05251215A (en) 1993-09-28

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