JPH05251215A - Voltage dependent non-linear resistor ceramic element - Google Patents
Voltage dependent non-linear resistor ceramic elementInfo
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- JPH05251215A JPH05251215A JP4050294A JP5029492A JPH05251215A JP H05251215 A JPH05251215 A JP H05251215A JP 4050294 A JP4050294 A JP 4050294A JP 5029492 A JP5029492 A JP 5029492A JP H05251215 A JPH05251215 A JP H05251215A
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Abstract
Description
【0001】[0001]
【産業上の利用分野】本発明は電気機器や電子機器で発
生する異常高電圧、ノイズ、静電気などから機器の半導
体および回路を保護するためのコンデンサ特性とバリス
タ特性を有する電圧依存性非直線抵抗体磁器素子に関す
る。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a voltage-dependent non-linear resistance having capacitor characteristics and varistor characteristics for protecting semiconductors and circuits of equipment from abnormal high voltage, noise, static electricity, etc. generated in electric equipment and electronic equipment. Body porcelain element.
【0002】[0002]
【従来の技術】従来、各種の電気機器や電子機器におけ
る異常高電圧の吸収、ノイズの除去、火花消去、静電気
対策のために電圧依存性非直線抵抗特性を有するSiC
バリスタや、ZnO系バリスタなどが使用されている。
このようなバリスタの電圧−電流特性は近似的に次式の
ように表すことができる。2. Description of the Related Art Conventionally, SiC having a voltage-dependent non-linear resistance characteristic for absorbing abnormal high voltage, eliminating noise, eliminating sparks, and preventing static electricity in various electric and electronic devices.
Varistors and ZnO-based varistor are used.
The voltage-current characteristic of such a varistor can be approximately represented by the following equation.
【0003】[0003]
【数1】 [Equation 1]
【0004】ここで、Iは電流、Vは電圧、Cはバリス
タ固有の定数、αは電圧−電流非直線指数である。Here, I is a current, V is a voltage, C is a constant unique to a varistor, and α is a voltage-current nonlinear index.
【0005】SiCバリスタのαは2〜7で、ZnO系
バリスタではαが50にもおよぶものがある。このよう
なバリスタは比較的高い電圧の吸収には優れた性能を有
しているが、誘電率が低く、固有の静電容量が小さいた
めバリスタ電圧以下の比較的低い電圧の吸収にはほとん
ど効果を示さず、また誘電損失tanδが5〜10%と
大きい。The α of SiC varistor is 2 to 7, and the α of some ZnO varistor reaches 50. Although such a varistor has excellent performance in absorbing a relatively high voltage, it has almost no effect in absorbing a relatively low voltage below the varistor voltage due to its low dielectric constant and small intrinsic capacitance. Is not shown, and the dielectric loss tan δ is as large as 5 to 10%.
【0006】一方、これらの低電圧のノイズなどの除去
には見かけの誘電率が5×104程度で、tanδが1
%前後の半導体コンデンサが利用されている。しかし、
このような半導体コンデンサはサージなどによりある限
度以上の電圧または電流が印加されると静電容量が減少
したり破壊したりしてコンデンサとしての機能を果たさ
なくなる。On the other hand, for removing these low voltage noises, the apparent dielectric constant is about 5 × 10 4 , and tan δ is 1.
% Semiconductor capacitors are used. But,
When a voltage or current exceeding a certain limit is applied to such a semiconductor capacitor due to a surge or the like, the electrostatic capacity is reduced or destroyed, and the semiconductor capacitor does not function as a capacitor.
【0007】そこで最近になってSrTiO3を主成分
とし、バリスタ特性とコンデンサ特性の両方の特性を有
するものが開発され、コンピュータなどの電子機器にお
けるIC,LSIなどの半導体素子および回路の保護や
電子機器を相互に継ぐケーブルやコネクタなどから侵入
するノイズの除去に利用されている。Therefore, recently, a material containing SrTiO 3 as a main component and having both characteristics of varistor characteristics and capacitor characteristics was developed, and protection of electronic elements such as IC and LSI in electronic equipment such as computers and circuits and electronic It is used to remove noise that enters from cables and connectors that connect devices to each other.
【0008】以下にSrTiO3を主成分とするバリス
タとコンデンサの両方の特性を有する従来の電圧依存性
非抵抗体磁器素子について説明する。A conventional voltage-dependent non-resistive porcelain element having characteristics of both a varistor and a capacitor containing SrTiO 3 as a main component will be described below.
【0009】図3に示すように、コネクタなどから侵入
するノイズの除去に使用する電圧依存性非抵抗体磁器素
子10は、SrTiO3を主成分とした電圧依存性非直
線抵抗特性を有する半導体セラミックからなる円筒形の
素子11の上面と下面に電極12と電極13を配設した
ものである。As shown in FIG. 3, the voltage-dependent non-resistive ceramic element 10 used for removing noise that enters from a connector is a semiconductor ceramic containing SrTiO 3 as a main component and having voltage-dependent nonlinear resistance characteristics. An electrode 12 and an electrode 13 are arranged on the upper and lower surfaces of a cylindrical element 11 made of.
【0010】図4に示すように、電圧依存性非抵抗体磁
器素子10をコネクタに組み込むとき、導電性接着剤1
6および17でピン15と素子11の電極12および共
通端子14と素子11の電極13をそれぞれ接着する。
このとき、ピン15と素子11の隙間に導電性接着剤1
6の一部が流れ込むことがある。As shown in FIG. 4, when the voltage-dependent non-resistive ceramic element 10 is incorporated in the connector, the conductive adhesive 1
The pins 15 and the electrode 12 of the element 11 and the common terminal 14 and the electrode 13 of the element 11 are bonded with 6 and 17, respectively.
At this time, the conductive adhesive 1 is placed in the gap between the pin 15 and the element 11.
Part of 6 may flow in.
【0011】[0011]
【発明が解決しようとする課題】上述のように従来の構
成では、ピン15と素子11の隙間に導電性接着剤16
の一部が流れ込み、見掛け上の電極間距離が小さくな
り、バリスタ電圧が低くなり、バリスタ電圧に極性がつ
き、絶縁抵抗が低くなるという問題点を有していた。As described above, in the conventional structure, the conductive adhesive 16 is provided in the gap between the pin 15 and the element 11.
There is a problem in that a part of the liquid crystal flows in, the apparent distance between the electrodes becomes small, the varistor voltage becomes low, the varistor voltage becomes polar, and the insulation resistance becomes low.
【0012】本発明は、上記従来の問題点を解決するも
のでピンと素子の間の隙間に導電性接着剤の一部が流れ
込んでも、バリスタ電圧が変化せず、バリスタ電圧に極
性がつかず、絶縁抵抗が変化しない電圧依存性非直線抵
抗体磁器素子を提供することを目的とする。The present invention solves the above-mentioned conventional problems. Even if a part of the conductive adhesive flows into the gap between the pin and the element, the varistor voltage does not change and the varistor voltage has no polarity. An object of the present invention is to provide a voltage-dependent nonlinear resistor ceramic element whose insulation resistance does not change.
【0013】[0013]
【課題を解決するための手段】この目的を達成するため
に本発明の電圧依存性非直線抵抗体磁器素子は、中心部
に円筒状の貫通孔と同軸上で外周径が異なる2つの円筒
とその2つの円筒の境界の平面とを有し、かつ、大きい
径の円筒の長さが小さい径の円筒の長さより短い形状の
半導体セラミックにその貫通孔の内周全面に電極を配設
し、その小さい径の円筒の外周全面に別の電極を配設し
た構成としたものである。In order to achieve this object, a voltage-dependent nonlinear resistor porcelain element of the present invention comprises a cylindrical through hole at the center and two cylinders having different outer diameters coaxially. An electrode is provided on the entire inner circumference of the through hole in a semiconductor ceramic having a plane of a boundary between the two cylinders, and a length of a cylinder of a large diameter is shorter than a length of a cylinder of a small diameter, Another electrode is arranged on the entire outer circumference of the small-diameter cylinder.
【0014】[0014]
【作用】この構成において、円筒の内周電極が一つの電
極として一体化されているので、ピンと素子の隙間に導
電性接着剤が流れ込んでも電極間距離は変化しないこと
となり、また、共通端子の接続が容易で接着力を大きく
するとともに余分な導電性接着剤のたれを大きい径の円
筒で止めるので、電極間距離は変化しないこととなる。In this structure, since the cylindrical inner peripheral electrode is integrated as one electrode, the distance between the electrodes does not change even if the conductive adhesive flows into the gap between the pin and the element, and the common terminal Since the connection is easy, the adhesive force is increased, and the dripping of the extra conductive adhesive is stopped by the cylinder having a large diameter, the distance between the electrodes does not change.
【0015】[0015]
(実施例1)以下本発明の第1の実施例について説明す
る。(Embodiment 1) A first embodiment of the present invention will be described below.
【0016】SrCO3,CaCO3,BaCO3,Mg
CO3,TiO2を(表1)に示すように組成比を種々変
えて秤量し、ボールミルなどで24時間混合する。次
に、乾燥した後、1050℃で4時間焼成し、再びボー
ルミルなどで24時間粉砕した後乾燥し第1成分とす
る。SrCO 3 , CaCO 3 , BaCO 3 , Mg
CO 3 and TiO 2 are weighed with various composition ratios changed as shown in (Table 1) and mixed for 24 hours with a ball mill or the like. Next, after drying, it is baked at 1050 ° C. for 4 hours, pulverized again by a ball mill or the like for 24 hours, and then dried to obtain the first component.
【0017】[0017]
【表1】 [Table 1]
【0018】次に、第1成分、第2成分、第3成分を下
記の(表1)に示した組成比になるように秤量し、ボー
ルミルなどで24時間混合した後、乾燥し、ポリビニル
アルコールなどの有機バインダーを10重量%添加して
造粒した後、1(t/cm2)のプレス圧力で円筒の外周
径が小さい部分は外径4mmφ、内径1.4mmφ、高さ
2.5mm、円筒の外周径が大きい部分は外径6mmφ、内
径1.4mmφ、高さ0.5mmの円筒状に成形し、空気中
で1200℃で10時間焼成し脱バインダーする。次
に、還元性雰囲気たとえばN2:H2=9:1のガス中で
1425℃で5時間焼成する。Next, the first component, the second component and the third component were weighed so as to have the composition ratio shown in (Table 1) below, mixed for 24 hours with a ball mill or the like and then dried to obtain polyvinyl alcohol. After adding 10% by weight of an organic binder such as, for example, and granulating with a press pressure of 1 (t / cm 2 ), the outer diameter of the cylinder is 4 mmφ, the inner diameter is 1.4 mmφ, and the height is 2.5 mm. A portion of the cylinder having a large outer diameter is formed into a cylindrical shape having an outer diameter of 6 mmφ, an inner diameter of 1.4 mmφ and a height of 0.5 mm, and is fired in air at 1200 ° C. for 10 hours to remove the binder. Next, firing is performed at 1425 ° C. for 5 hours in a reducing atmosphere such as N 2 : H 2 = 9: 1 gas.
【0019】さらにその後、酸化性雰囲気例えば空気中
で1120℃で5時間焼成する。こうして得られた素体
の内周面にZnなどからなる導電性オーミックペースト
を例えばローラー転写などの方法により配設し、円筒の
外周径が小さい部分の外周面全体にZnなどからなる導
電性オーミックペーストを例えばローラー転写などの方
法により配設する。その後120℃で10分間乾燥さ
せ、さらにその上から非オーミック性の導電性ペースト
を同様にしてローラー転写などの方法により設け、12
0℃で10分間乾燥させ、630℃で3分間焼成し、図
1に示すように素子3に電極1と電極2を配設した電圧
依存性抵抗体磁器素子4を形成する。After that, baking is performed at 1120 ° C. for 5 hours in an oxidizing atmosphere such as air. A conductive ohmic paste made of Zn or the like is disposed on the inner peripheral surface of the element body thus obtained by, for example, a method such as roller transfer, and the conductive ohmic paste made of Zn or the like is formed on the entire outer peripheral surface of the portion where the outer diameter of the cylinder is small. The paste is arranged by a method such as roller transfer. Thereafter, it is dried at 120 ° C. for 10 minutes, and a non-ohmic conductive paste is similarly provided thereon by a method such as roller transfer.
It is dried at 0 ° C. for 10 minutes and baked at 630 ° C. for 3 minutes to form a voltage-dependent resistor porcelain element 4 in which the electrode 1 and the electrode 2 are arranged on the element 3 as shown in FIG.
【0020】次に図2に示すように、導電性接着剤5お
よび導電性接着剤8によりピン6および共通端子9を取
り付け、ブタジエンゴムなどの樹脂(図示せず)を充填
し硬化する。Next, as shown in FIG. 2, the pins 6 and the common terminal 9 are attached by the conductive adhesive 5 and the conductive adhesive 8, and a resin (not shown) such as butadiene rubber is filled and cured.
【0021】(実施例2)第1の実施例と同様にして得
た素子の、内周面にZnなどからなる導電性オーミック
ペーストを例えばローラー転写などの方法により配設
し、円筒の外周径が小さい部分の外周面全体にZnなど
からなる導電性オーミックペーストを例えばローラー転
写などの方法により設けた後、120℃で10分間乾燥
させ、630℃で3分間焼成する。次に、弱酸などによ
り導電部分を活性化し、無電解により活性化した部分に
のみCuめっき、Niめっきを施し、さらにその上に電
解半田めっきをし、三層構造にした電極1と電極2とす
る。次に図2に示した第1の実施例と同様に半田などの
導電性接着剤5,8によりピン6および共通端子9を取
り付け、ブタジエンゴムなどの樹脂を充填し、加熱硬化
する。このようにして得られた電圧依存性抵抗体磁器素
子の素子単品とコネクタ組み立て後の電気特性をそれぞ
れ(表2)と(表3)に示す。(Embodiment 2) A conductive ohmic paste made of Zn or the like is arranged on the inner peripheral surface of an element obtained in the same manner as in the first embodiment by, for example, a roller transfer method or the like, and the outer diameter of the cylinder is set. A conductive ohmic paste made of Zn or the like is provided on the entire outer peripheral surface of the small portion by, for example, a method such as roller transfer, followed by drying at 120 ° C. for 10 minutes and firing at 630 ° C. for 3 minutes. Next, a conductive portion is activated with a weak acid or the like, Cu plating and Ni plating are applied only to the activated portion without electrolysis, and electrolytic solder plating is further applied to the electrode to form an electrode 1 and an electrode 2 having a three-layer structure. To do. Next, similarly to the first embodiment shown in FIG. 2, the pins 6 and the common terminal 9 are attached by the conductive adhesives 5, 8 such as solder, filled with a resin such as butadiene rubber, and cured by heating. The electrical characteristics of the voltage-dependent resistor porcelain element obtained as described above and after assembly of the connector are shown in (Table 2) and (Table 3), respectively.
【0022】[0022]
【表2】 [Table 2]
【0023】[0023]
【表3】 [Table 3]
【0024】(表2)および(表3)のV1mAは、1m
Aの電流を流したときに素子の両端にかかる電圧であ
り、V1mAの極性は、正方向のV1mAと負方向のV1mAの
差を正方向のV1mAで割った値であり、絶縁抵抗は、印
加電圧12VDCの時のピン6と共通端子9の間の絶縁
抵抗値である。この(表2),(表3)から明らかなよ
うに、本実施例による電圧依存性非直線抵抗体磁器素子
は、V1mAの極性および絶縁抵抗の点で従来例に比して
優れた効果が得られる。V 1mA in (Table 2) and (Table 3) is 1 m
A voltage across the element when current flows in the A, the polarity of V 1mA is a value obtained by dividing the difference between the positive direction of V 1mA and the negative direction of the V 1mA in the positive direction of V 1mA, insulation The resistance is an insulation resistance value between the pin 6 and the common terminal 9 when the applied voltage is 12 VDC. As is clear from these (Table 2) and (Table 3), the voltage-dependent nonlinear resistor ceramic element according to this example is superior to the conventional example in terms of V 1 mA polarity and insulation resistance. Is obtained.
【0025】また第1成分のSrの一部をCa,Ba,
Mgで置換する割合は実施例では一部しか示さなかった
が、素子の特性としてバリスタ特性とコンデンサ特性を
同時に持つ範囲内であればどのようなものであってもか
まわない。また第2成分、第3成分は実施例では一部の
組み合わせについてのみ示したが素子の特性としてバリ
スタ特性とコンデンサ特性を同時に持つ範囲内であれば
どのような成分であってもかまわない。また、オーミッ
ク性の電極としてはZn以外にAg,Cu,Niなどが
あるが、これら以外でも素子と電極との界面でオーミッ
ク接続がとれるものであればどのようなものであっても
かまわない。また、めっきする方法は電解でも無電解で
もかまわないし、酸性めっきでも塩基性めっきでも中性
めっきでもかまわない。また本実施例ではめっきの組み
合わせについては一部についてのみ示したが、同様の効
果が得られるものであればどのような組み合わせでもか
まわない。また電圧依存性非直線抵抗体磁器素子にたと
えばフェライト、コイル、トロイダルコイルなどからな
るインダクタンスを接続する構成にすることにより、ノ
イズ除去効果を改善することができる。Further, a part of Sr of the first component is Ca, Ba,
Although only a part of the ratio of substitution with Mg is shown in the examples, any ratio may be used as long as it is within the range of having both varistor characteristics and capacitor characteristics as the element characteristics. Further, the second component and the third component are shown only for some combinations in the embodiments, but any component may be used as long as it is within the range of simultaneously having varistor characteristics and capacitor characteristics as element characteristics. Further, as the ohmic electrode, there are Ag, Cu, Ni, etc. in addition to Zn, but any other material may be used as long as ohmic connection can be made at the interface between the element and the electrode. The plating method may be electrolytic or electroless, and may be acidic plating, basic plating or neutral plating. Further, although only a part of the combination of plating is shown in the present embodiment, any combination may be used as long as the same effect can be obtained. Further, the noise removing effect can be improved by connecting the voltage-dependent nonlinear resistor porcelain element with an inductance such as a ferrite, a coil, or a toroidal coil.
【0026】以上のように本実施例によれば、全体が円
筒形で円筒の一方の端部が他の部分より大きい径の円筒
化をなし、大きい径の円筒の長さが小さい径の円筒の長
さよりも短く、全体の円筒の中央部に円筒状の貫通孔を
有するように形成し、貫通孔の内周面全体に電極1を配
設し、外周径が小さい円筒の外周面全体に電極2を配設
することにより、円筒の内周の電極1が一つの電極とし
て一体化されるため、ピン6と素子3の隙間に半田など
の導電性接着剤5が流れ込んでも一体化された電極1の
上であるため、見掛けの電極間距離は変化しない。した
がって電気的特性は安定で、バリスタ電圧は変化せず、
バリスタ電圧に極性はつかず、絶縁抵抗は変化しない。As described above, according to this embodiment, the entire cylinder is formed, one end of the cylinder is made larger in diameter than the other portion, and the larger diameter cylinder is smaller in length. Is shorter than the length of the cylinder, and is formed so as to have a cylindrical through hole at the center of the entire cylinder, and the electrode 1 is arranged on the entire inner peripheral surface of the through hole. By disposing the electrode 2, the electrode 1 on the inner circumference of the cylinder is integrated as one electrode, so that it is integrated even if the conductive adhesive 5 such as solder flows into the gap between the pin 6 and the element 3. Since it is on the electrode 1, the apparent distance between the electrodes does not change. Therefore, the electrical characteristics are stable, the varistor voltage does not change,
The varistor voltage has no polarity and the insulation resistance does not change.
【0027】また、共通端子9を電極2に半田などの導
電性接着剤8で接続するとき、接続が容易で接着力が大
きくできるとともに余分な半田などの導電性接着剤8の
たれを大きい径の円筒の部分で止めることにより、見掛
けの電極間距離は変化しないようにすることができる。
また大きい径の円筒の外周に半田などの導電性接着剤8
がたれ込んでも電極1から離れる方向にたれ込むことか
ら、見掛けの電極間距離は変化しない。また全体が円筒
形で円筒の一方の端部が他の部分より大きい径の円筒と
しているので、表面絶縁距離を広くとることができるた
め電気的特性は安定で、バリスタ電圧は変化せず、バリ
スタ電圧に極性はつかず、絶縁抵抗は変化せず、素子を
コネクタに組み立てても組み立て前後の特性の変化は極
めて小さく安定になるという効果が得られ、課電寿命特
性を改善することができ、信頼性を向上させることがで
きる。また電極1、電極2、共通端子9の最上層を半田
めっきにすることにより、例えばピン6と電極1の隙間
や電極2と共通端子9の隙間を小さくしておけば、導電
性接着剤5,8がなくても加熱処理するだけで電極1、
電極2、共通端子9の最上層の半田めっきが互いに溶融
して接続させることができる。また素子3の電気的特性
を十分に引き出すためにはCuめっき、Niめっき、C
rめっき、Snめっき、Pbめっき、Auめっき、Ag
めっき、Pdめっき、半田めっきのうち一つまたは複数
の種類を重ねた電極とすることにより、素子と電極の界
面にバリヤーを形成することなく素子の電気的特性を十
分に引き出すことができ、半田付けが容易にでき、複数
の種類の多層めっき構造にすることにより半田耐熱性を
向上させることができる。Further, when the common terminal 9 is connected to the electrode 2 with a conductive adhesive 8 such as solder, the connection is easy and the adhesive force can be increased, and the excess of the conductive adhesive 8 such as extra solder is sagging. The apparent distance between the electrodes can be prevented from changing by stopping at the cylindrical portion of.
In addition, a conductive adhesive 8 such as solder is attached to the outer periphery of the large diameter cylinder.
Even if it falls, the apparent distance between the electrodes does not change because it falls away from the electrode 1. Also, because the entire cylinder is one and one end of the cylinder has a diameter larger than the other part, the surface insulation distance can be wide, so the electrical characteristics are stable, the varistor voltage does not change, and the varistor voltage does not change. The voltage does not have polarity, the insulation resistance does not change, and even if the element is assembled into the connector, the change in characteristics before and after assembly is extremely small and stable, and it is possible to improve the life span. The reliability can be improved. If the gap between the pin 6 and the electrode 1 and the gap between the electrode 2 and the common terminal 9 are made small by solder plating the uppermost layers of the electrode 1, the electrode 2, and the common terminal 9, the conductive adhesive 5 , Electrode 8 only by heat treatment without 8,
The electrodes 2 and the solder plating on the uppermost layer of the common terminal 9 can be melted and connected to each other. In order to bring out the electrical characteristics of the element 3 sufficiently, Cu plating, Ni plating, C
r plating, Sn plating, Pb plating, Au plating, Ag
By using an electrode in which one or more kinds of plating, Pd plating, and solder plating are stacked, the electrical characteristics of the element can be sufficiently brought out without forming a barrier at the interface between the element and the electrode. It can be easily attached, and the solder heat resistance can be improved by using a plurality of types of multilayer plating structures.
【0028】また、素子の形状を円筒状にすることによ
り素子の長さは長くなるが、素子の半径方向には寸法を
小さくできるためコネクタのピン間隔を小さくすること
が可能で、コネクタを小型化するのに有効である。また
共通端子9を素子3の中間部の電極に接続することによ
り、共通端子9からはみでる高さを低くすることがで
き、高さ方向の小型化も可能になる。Further, although the length of the element is increased by making the element cylindrical, the size of the element can be reduced in the radial direction, so that the pin interval of the connector can be reduced and the connector can be miniaturized. It is effective in converting. Further, by connecting the common terminal 9 to the electrode in the intermediate portion of the element 3, the height protruding from the common terminal 9 can be reduced, and the size can be reduced in the height direction.
【0029】[0029]
【発明の効果】以上の実施例の説明からも明らかなよう
に本発明は、中心部に円筒状の貫通孔と同軸上で外周径
が異なる2つの円筒とその2つの円筒の境界の平面とを
有し、かつ、大きい径の円筒の長さが小さい径の円筒の
長さより短い形状の半導体セラミックに、その貫通孔の
内周全面に電極を配設し、その小さい径の円筒の外周全
面に別の電極を配設した構成により、ピンと素子の間の
隙間に導電性接着剤の一部が流れ込んでも、バリスタ電
圧が変化せず、バリスタ電圧に極性がつかず、絶縁抵抗
が変化しない優れた電圧依存性非直線抵抗体磁器素子を
実現できるものである。As is apparent from the above description of the embodiments, the present invention provides two cylinders having different outer diameters coaxially with a cylindrical through hole in the center and a plane of a boundary between the two cylinders. In addition, a large diameter cylinder has a length shorter than that of a small diameter cylinder, and an electrode is provided on the entire inner circumference of the through hole of the semiconductor ceramic having a shape shorter than that of the small diameter cylinder. Even if a part of the conductive adhesive flows into the gap between the pin and the element, the varistor voltage does not change, the varistor voltage does not have polarity, and the insulation resistance does not change. It is possible to realize a voltage-dependent nonlinear resistor ceramic element.
【図1】本発明の一実施例の電圧依存性非直線抵抗体磁
器素子の断面図FIG. 1 is a sectional view of a voltage-dependent nonlinear resistor ceramic element according to an embodiment of the present invention.
【図2】同電圧依存性非直線抵抗体磁器素子をコネクタ
に接続したときの断面略図FIG. 2 is a schematic cross-sectional view of the same voltage-dependent nonlinear resistor porcelain element connected to a connector.
【図3】従来の電圧依存性非直線抵抗体磁器素子の断面
図FIG. 3 is a cross-sectional view of a conventional voltage-dependent nonlinear resistor ceramic element.
【図4】同電圧依存性非直線抵抗体磁器素子をコネクタ
に接続したときの断面略図FIG. 4 is a schematic cross-sectional view of the same voltage-dependent nonlinear resistor porcelain element connected to a connector.
1 電極 2 電極 3 素子 1 electrode 2 electrode 3 element
Claims (6)
が異なる2つの円筒とその2つの円筒の境界の平面とを
有し、かつ、前記円筒の大きい径の方の長さが小さい径
の方の長さよりも短い形状でSrTiO3を主成分とし
た電圧依存性非直線抵抗特性を有する半導体セラミック
を備え、前記半導体セラミックの前記貫通孔の内周全面
に配設した電極と、前記小さい径の円筒の外周全面に配
設した別の電極を備えた電圧依存性非直線抵抗体磁器素
子。1. A cylinder having a cylindrical through hole at the center thereof, two cylinders having different outer diameters on the same axis and a plane of a boundary between the two cylinders, and a length of the cylinder having a larger diameter. A semiconductor ceramic having a voltage-dependent nonlinear resistance characteristic whose main component is SrTiO 3 and having a shape shorter than the length of the smaller diameter, and an electrode provided on the entire inner circumference of the through hole of the semiconductor ceramic. A voltage-dependent nonlinear resistor porcelain element provided with another electrode arranged on the entire outer circumference of the small-diameter cylinder.
ミック性電極の上地を重ねた構成である請求項1記載の
電圧依存性非直線抵抗体磁器素子。2. The voltage-dependent nonlinear resistor porcelain element according to claim 1, wherein the electrode has a structure in which an underlying layer of the ohmic electrode is overlaid with an upper layer of the non-ohmic electrode.
っき、Niめっき、Crめっき、Snめっき、Pbめっ
き、Auめっき、Agめっき、Puめっき、半田めっき
のうち一つまたは複数の種類の上地を重ねた構成である
請求項1記載の電圧依存性非直線抵抗体磁器素子。3. The electrode is one or more of Cu plating, Ni plating, Cr plating, Sn plating, Pb plating, Au plating, Ag plating, Pu plating, and solder plating on the base of the ohmic electrode. The voltage-dependent nonlinear resistor ceramic element according to claim 1, wherein the voltage-dependent nonlinear resistor porcelain element has a structure in which grounds are stacked.
っき、Snめっき、Pbめっき、Auめっき、Agめっ
き、Puめっき、半田めっきのうち一つまたは複数の種
類を重ねた構成である請求項1記載の電圧依存性非直線
抵抗体磁器素子。4. The electrode has a structure in which one or more kinds of Cu plating, Ni plating, Cr plating, Sn plating, Pb plating, Au plating, Ag plating, Pu plating, and solder plating are stacked. 1. The voltage-dependent nonlinear resistor porcelain element according to 1.
ある請求項1記載の電圧依存性非直線抵抗体磁器素子。5. The voltage-dependent nonlinear resistor porcelain element according to claim 1, wherein the electrode has a structure in which the uppermost layer is plated with solder.
Ca,Ba,Mgのうち少なくとも一つ以上の元素で置
換した電圧依存性非直線抵抗特性を有する半導体セラミ
ックを備えた請求項1、請求項2、請求項3、請求項4
または請求項5記載の電圧依存性非直線抵抗体磁器素
子。6. A semiconductor ceramic having voltage-dependent nonlinear resistance characteristics, wherein a part of Sr of the main component SrTiO 3 is replaced with at least one element of Ca, Ba and Mg. , Claim 2, claim 3, claim 4
Alternatively, the voltage-dependent nonlinear resistor porcelain element according to claim 5.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4050294A JP3003361B2 (en) | 1992-03-09 | 1992-03-09 | Voltage-dependent nonlinear resistor porcelain element |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4050294A JP3003361B2 (en) | 1992-03-09 | 1992-03-09 | Voltage-dependent nonlinear resistor porcelain element |
Publications (2)
Publication Number | Publication Date |
---|---|
JPH05251215A true JPH05251215A (en) | 1993-09-28 |
JP3003361B2 JP3003361B2 (en) | 2000-01-24 |
Family
ID=12854886
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP4050294A Expired - Fee Related JP3003361B2 (en) | 1992-03-09 | 1992-03-09 | Voltage-dependent nonlinear resistor porcelain element |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP3003361B2 (en) |
-
1992
- 1992-03-09 JP JP4050294A patent/JP3003361B2/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
JP3003361B2 (en) | 2000-01-24 |
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