JPH0518266B2 - - Google Patents

Info

Publication number
JPH0518266B2
JPH0518266B2 JP58235206A JP23520683A JPH0518266B2 JP H0518266 B2 JPH0518266 B2 JP H0518266B2 JP 58235206 A JP58235206 A JP 58235206A JP 23520683 A JP23520683 A JP 23520683A JP H0518266 B2 JPH0518266 B2 JP H0518266B2
Authority
JP
Japan
Prior art keywords
gate electrode
region
semiconductor device
layer
channel
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP58235206A
Other languages
English (en)
Japanese (ja)
Other versions
JPS59117269A (ja
Inventor
Yan Maria Eseru Reonarudo
Yosefusu Adorianusu Maria Fuan De Uieru Petorasu
Antoniusu Daberuberudo Reonarudasu
Antoniusu Andoriasu Fuan Girusu Yohannesu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Koninklijke Philips Electronics NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Koninklijke Philips Electronics NV filed Critical Koninklijke Philips Electronics NV
Publication of JPS59117269A publication Critical patent/JPS59117269A/ja
Publication of JPH0518266B2 publication Critical patent/JPH0518266B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/65—Lateral DMOS [LDMOS] FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/0411—Manufacture or treatment of FETs having insulated gates [IGFET] of FETs having floating gates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/601—Insulated-gate field-effect transistors [IGFET] having lightly-doped drain or source extensions, e.g. LDD IGFETs or DDD IGFETs 
    • H10D30/603—Insulated-gate field-effect transistors [IGFET] having lightly-doped drain or source extensions, e.g. LDD IGFETs or DDD IGFETs  having asymmetry in the channel direction, e.g. lateral high-voltage MISFETs having drain offset region or extended drain IGFETs [EDMOS]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/601—Insulated-gate field-effect transistors [IGFET] having lightly-doped drain or source extensions, e.g. LDD IGFETs or DDD IGFETs 
    • H10D30/605—Insulated-gate field-effect transistors [IGFET] having lightly-doped drain or source extensions, e.g. LDD IGFETs or DDD IGFETs  having significant overlap between the lightly-doped extensions and the gate electrode
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/611—Insulated-gate field-effect transistors [IGFET] having multiple independently-addressable gate electrodes influencing the same channel
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/031—Manufacture or treatment of data-storage electrodes
    • H10D64/035—Manufacture or treatment of data-storage electrodes comprising conductor-insulator-conductor-insulator-semiconductor structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/661—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes the conductor comprising a layer of silicon contacting the insulator, e.g. polysilicon having vertical doping variation
JP58235206A 1982-12-16 1983-12-15 半導体デバイスおよびその製造方法 Granted JPS59117269A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
NL8204855 1982-12-16
NL8204855A NL8204855A (nl) 1982-12-16 1982-12-16 Veldeffekttransistor met geisoleerde stuurelektrode en werkwijze ter vervaardiging daarvan.

Publications (2)

Publication Number Publication Date
JPS59117269A JPS59117269A (ja) 1984-07-06
JPH0518266B2 true JPH0518266B2 (enExample) 1993-03-11

Family

ID=19840751

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58235206A Granted JPS59117269A (ja) 1982-12-16 1983-12-15 半導体デバイスおよびその製造方法

Country Status (5)

Country Link
US (1) US4716446A (enExample)
EP (1) EP0115652B1 (enExample)
JP (1) JPS59117269A (enExample)
DE (1) DE3370721D1 (enExample)
NL (1) NL8204855A (enExample)

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH065752B2 (ja) * 1986-06-25 1994-01-19 株式会社東芝 電界効果トランジスタ
US4888627A (en) * 1987-05-19 1989-12-19 General Electric Company Monolithically integrated lateral insulated gate semiconductor device
JP2698645B2 (ja) * 1988-05-25 1998-01-19 株式会社東芝 Ｍｏｓｆｅｔ
US4984040A (en) * 1989-06-15 1991-01-08 Xerox Corporation High voltage thin film transistor with second gate
US4984041A (en) * 1989-07-28 1991-01-08 Xerox Corporation High voltage thin film transistor with second control electrode
JPH03280071A (ja) * 1990-03-29 1991-12-11 Konica Corp 印刷版の形成方法
JP2987884B2 (ja) * 1990-06-04 1999-12-06 日産自動車株式会社 半導体装置
JPH04328869A (ja) * 1991-04-30 1992-11-17 Kawasaki Steel Corp 電界効果トランジスタおよびその製造方法
JP3282965B2 (ja) * 1996-03-26 2002-05-20 シャープ株式会社 トランジスタ
US6507070B1 (en) * 1996-11-25 2003-01-14 Semiconductor Components Industries Llc Semiconductor device and method of making
US5898198A (en) * 1997-08-04 1999-04-27 Spectrian RF power device having voltage controlled linearity
DE10047168A1 (de) * 2000-09-22 2002-04-18 Eupec Gmbh & Co Kg Steuerbares Halbleiterbauelement
US6825543B2 (en) * 2000-12-28 2004-11-30 Canon Kabushiki Kaisha Semiconductor device, method for manufacturing the same, and liquid jet apparatus
US6870220B2 (en) * 2002-08-23 2005-03-22 Fairchild Semiconductor Corporation Method and apparatus for improved MOS gating to reduce miller capacitance and switching losses
KR100899533B1 (ko) * 2002-06-29 2009-05-27 매그나칩 반도체 유한회사 고전압 소자 및 그 제조방법
GB0422476D0 (en) * 2004-10-09 2004-11-10 Koninkl Philips Electronics Nv Power semiconductor devices
US7616490B2 (en) * 2006-10-17 2009-11-10 Sandisk Corporation Programming non-volatile memory with dual voltage select gate structure
CN102569079B (zh) * 2010-12-17 2014-12-10 上海华虹宏力半导体制造有限公司 具有自对准金属硅化工艺的双栅ldmos的制备方法
CN102569386B (zh) * 2010-12-17 2015-02-04 上海华虹宏力半导体制造有限公司 具有屏蔽栅的vdmos器件及其制备方法
US20120175679A1 (en) * 2011-01-10 2012-07-12 Fabio Alessio Marino Single structure cascode device
JP5784652B2 (ja) * 2013-02-14 2015-09-24 株式会社東芝 半導体装置
US20140347135A1 (en) 2013-05-23 2014-11-27 Nxp B.V. Bipolar transistors with control of electric field
US10937872B1 (en) * 2019-08-07 2021-03-02 Vanguard International Semiconductor Corporation Semiconductor structures

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3450960A (en) * 1965-09-29 1969-06-17 Ibm Insulated-gate field effect transistor with nonplanar gate electrode structure for optimizing transconductance
US3926694A (en) * 1972-07-24 1975-12-16 Signetics Corp Double diffused metal oxide semiconductor structure with isolated source and drain and method
DE2729657A1 (de) * 1977-06-30 1979-01-11 Siemens Ag Feldeffekttransistor mit extrem kurzer kanallaenge
DE2729656A1 (de) * 1977-06-30 1979-01-11 Siemens Ag Feldeffekttransistor mit extrem kurzer kanallaenge
JPS5418687A (en) * 1977-07-12 1979-02-10 Nec Corp Insulating gate field effect transistor
DE2921600A1 (de) * 1979-05-28 1980-12-04 Siemens Ag Feldeffekttransistor mit kurzer kanallaenge
GB2089118A (en) * 1980-12-10 1982-06-16 Philips Electronic Associated Field-effect semiconductor device
DD158597A1 (de) * 1981-05-08 1983-01-19 Gerhard Cattus Mis-transistor fuer hochfrequenzschaltungen

Also Published As

Publication number Publication date
NL8204855A (nl) 1984-07-16
DE3370721D1 (en) 1987-05-07
US4716446A (en) 1987-12-29
EP0115652B1 (en) 1987-04-01
EP0115652A1 (en) 1984-08-15
JPS59117269A (ja) 1984-07-06

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