JPH0516198B2 - - Google Patents
Info
- Publication number
- JPH0516198B2 JPH0516198B2 JP58018039A JP1803983A JPH0516198B2 JP H0516198 B2 JPH0516198 B2 JP H0516198B2 JP 58018039 A JP58018039 A JP 58018039A JP 1803983 A JP1803983 A JP 1803983A JP H0516198 B2 JPH0516198 B2 JP H0516198B2
- Authority
- JP
- Japan
- Prior art keywords
- layer
- conductive layer
- transparent conductive
- tin oxide
- photoelectric conversion
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/20—Electrodes
- H10F77/244—Electrodes made of transparent conductive layers, e.g. transparent conductive oxide [TCO] layers
Landscapes
- Photovoltaic Devices (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58018039A JPS58151072A (ja) | 1983-02-08 | 1983-02-08 | 光電変換素子及びその製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58018039A JPS58151072A (ja) | 1983-02-08 | 1983-02-08 | 光電変換素子及びその製造方法 |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP56178966A Division JPS5880877A (ja) | 1981-11-10 | 1981-11-10 | 太陽電池及びその製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS58151072A JPS58151072A (ja) | 1983-09-08 |
| JPH0516198B2 true JPH0516198B2 (OSRAM) | 1993-03-03 |
Family
ID=11960531
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58018039A Granted JPS58151072A (ja) | 1983-02-08 | 1983-02-08 | 光電変換素子及びその製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS58151072A (OSRAM) |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57157578A (en) * | 1981-03-23 | 1982-09-29 | Sumitomo Electric Ind Ltd | Active crystalline silicon thin film photovoltaic element |
| JPS5814582A (ja) * | 1981-07-17 | 1983-01-27 | Kanegafuchi Chem Ind Co Ltd | 高効率のアモルフアスシリコン系太陽電池 |
-
1983
- 1983-02-08 JP JP58018039A patent/JPS58151072A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS58151072A (ja) | 1983-09-08 |
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