JPH0513359B2 - - Google Patents
Info
- Publication number
- JPH0513359B2 JPH0513359B2 JP60133420A JP13342085A JPH0513359B2 JP H0513359 B2 JPH0513359 B2 JP H0513359B2 JP 60133420 A JP60133420 A JP 60133420A JP 13342085 A JP13342085 A JP 13342085A JP H0513359 B2 JPH0513359 B2 JP H0513359B2
- Authority
- JP
- Japan
- Prior art keywords
- bit line
- sense amplifier
- latch circuit
- memory cell
- latch
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Dram (AREA)
- Static Random-Access Memory (AREA)
Priority Applications (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60133420A JPS61292292A (ja) | 1985-06-19 | 1985-06-19 | 半導体記憶装置 |
| DE8585109699T DE3582376D1 (de) | 1984-08-03 | 1985-08-02 | Halbleiterspeicheranordnung. |
| US06/761,709 US4764901A (en) | 1984-08-03 | 1985-08-02 | Semiconductor memory device capable of being accessed before completion of data output |
| EP85109699A EP0170285B1 (en) | 1984-08-03 | 1985-08-02 | Semiconductor memory device |
| KR1019860004837A KR910000385B1 (ko) | 1985-06-19 | 1986-06-18 | 반도체장치 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60133420A JPS61292292A (ja) | 1985-06-19 | 1985-06-19 | 半導体記憶装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS61292292A JPS61292292A (ja) | 1986-12-23 |
| JPH0513359B2 true JPH0513359B2 (cs) | 1993-02-22 |
Family
ID=15104352
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP60133420A Granted JPS61292292A (ja) | 1984-08-03 | 1985-06-19 | 半導体記憶装置 |
Country Status (2)
| Country | Link |
|---|---|
| JP (1) | JPS61292292A (cs) |
| KR (1) | KR910000385B1 (cs) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2685357B2 (ja) * | 1990-12-14 | 1997-12-03 | 株式会社東芝 | 半導体記憶装置 |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS55132595A (en) * | 1979-04-04 | 1980-10-15 | Nec Corp | Semiconductor circuit |
| JPS5919291A (ja) * | 1982-07-21 | 1984-01-31 | Hitachi Ltd | 半導体メモリ装置 |
| US4630240A (en) * | 1984-07-02 | 1986-12-16 | Texas Instruments Incorporated | Dynamic memory with intermediate column derode |
| US4658377A (en) * | 1984-07-26 | 1987-04-14 | Texas Instruments Incorporated | Dynamic memory array with segmented bit lines |
-
1985
- 1985-06-19 JP JP60133420A patent/JPS61292292A/ja active Granted
-
1986
- 1986-06-18 KR KR1019860004837A patent/KR910000385B1/ko not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| JPS61292292A (ja) | 1986-12-23 |
| KR910000385B1 (ko) | 1991-01-24 |
| KR870000702A (ko) | 1987-02-20 |
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| Publication | Publication Date | Title |
|---|---|---|
| EP0129651B1 (en) | Dynamic semiconductor memory having sensing amplifiers | |
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| JPH041955B2 (cs) | ||
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| JPH0514997B2 (cs) | ||
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| JPH0752577B2 (ja) | 半導体メモリ | |
| JPS6235193B2 (cs) | ||
| JPS63275096A (ja) | 半導体記憶装置 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EXPY | Cancellation because of completion of term |