JPH0511432B2 - - Google Patents
Info
- Publication number
- JPH0511432B2 JPH0511432B2 JP60102698A JP10269885A JPH0511432B2 JP H0511432 B2 JPH0511432 B2 JP H0511432B2 JP 60102698 A JP60102698 A JP 60102698A JP 10269885 A JP10269885 A JP 10269885A JP H0511432 B2 JPH0511432 B2 JP H0511432B2
- Authority
- JP
- Japan
- Prior art keywords
- layer
- mask
- superconductor
- etching
- mask layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000010410 layer Substances 0.000 claims description 192
- 238000005530 etching Methods 0.000 claims description 97
- 239000002887 superconductor Substances 0.000 claims description 79
- 238000000034 method Methods 0.000 claims description 33
- 239000011241 protective layer Substances 0.000 claims description 25
- 238000004519 manufacturing process Methods 0.000 claims description 22
- 230000004888 barrier function Effects 0.000 claims description 21
- 239000000758 substrate Substances 0.000 claims description 14
- 239000004020 conductor Substances 0.000 claims 1
- 229920002120 photoresistant polymer Polymers 0.000 description 17
- 239000010955 niobium Substances 0.000 description 14
- 239000000463 material Substances 0.000 description 9
- 238000010884 ion-beam technique Methods 0.000 description 6
- 238000004544 sputter deposition Methods 0.000 description 6
- 238000007740 vapor deposition Methods 0.000 description 6
- 239000003960 organic solvent Substances 0.000 description 3
- 238000000992 sputter etching Methods 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- MVPPADPHJFYWMZ-UHFFFAOYSA-N chlorobenzene Chemical compound ClC1=CC=CC=C1 MVPPADPHJFYWMZ-UHFFFAOYSA-N 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 229910052758 niobium Inorganic materials 0.000 description 2
- 230000001590 oxidative effect Effects 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- AFYPFACVUDMOHA-UHFFFAOYSA-N chlorotrifluoromethane Chemical compound FC(F)(F)Cl AFYPFACVUDMOHA-UHFFFAOYSA-N 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000009499 grossing Methods 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 1
- URLJKFSTXLNXLG-UHFFFAOYSA-N niobium(5+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Nb+5].[Nb+5] URLJKFSTXLNXLG-UHFFFAOYSA-N 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000009832 plasma treatment Methods 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 238000009751 slip forming Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N60/00—Superconducting devices
- H10N60/01—Manufacture or treatment
- H10N60/0912—Manufacture or treatment of Josephson-effect devices
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Superconductor Devices And Manufacturing Methods Thereof (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60102698A JPS61263179A (ja) | 1985-05-16 | 1985-05-16 | ジヨセフソン接合素子の製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60102698A JPS61263179A (ja) | 1985-05-16 | 1985-05-16 | ジヨセフソン接合素子の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS61263179A JPS61263179A (ja) | 1986-11-21 |
| JPH0511432B2 true JPH0511432B2 (zh) | 1993-02-15 |
Family
ID=14334475
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP60102698A Granted JPS61263179A (ja) | 1985-05-16 | 1985-05-16 | ジヨセフソン接合素子の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61263179A (zh) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH03233982A (ja) * | 1990-02-09 | 1991-10-17 | Hitachi Ltd | ジョセフソン接合素子のパターン形成方法 |
| JPH0831628B2 (ja) * | 1990-06-22 | 1996-03-27 | 工業技術院長 | ジョセフソン集積回路の作製方法 |
| JP4736014B2 (ja) * | 2004-04-07 | 2011-07-27 | 大日本印刷株式会社 | 発光素子およびその製造方法 |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58175830A (ja) * | 1982-04-08 | 1983-10-15 | Matsushita Electric Ind Co Ltd | パタ−ン形成方法 |
-
1985
- 1985-05-16 JP JP60102698A patent/JPS61263179A/ja active Granted
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58175830A (ja) * | 1982-04-08 | 1983-10-15 | Matsushita Electric Ind Co Ltd | パタ−ン形成方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS61263179A (ja) | 1986-11-21 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EXPY | Cancellation because of completion of term |