JPH0510302B2 - - Google Patents

Info

Publication number
JPH0510302B2
JPH0510302B2 JP26821786A JP26821786A JPH0510302B2 JP H0510302 B2 JPH0510302 B2 JP H0510302B2 JP 26821786 A JP26821786 A JP 26821786A JP 26821786 A JP26821786 A JP 26821786A JP H0510302 B2 JPH0510302 B2 JP H0510302B2
Authority
JP
Japan
Prior art keywords
sic
oxide film
tools
cleaning
heat treatment
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP26821786A
Other languages
English (en)
Japanese (ja)
Other versions
JPS63123887A (ja
Inventor
Juichi Yamamoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Electric Co Ltd filed Critical Nippon Electric Co Ltd
Priority to JP26821786A priority Critical patent/JPS63123887A/ja
Publication of JPS63123887A publication Critical patent/JPS63123887A/ja
Publication of JPH0510302B2 publication Critical patent/JPH0510302B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Formation Of Insulating Films (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
JP26821786A 1986-11-10 1986-11-10 治工具の洗浄方法 Granted JPS63123887A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP26821786A JPS63123887A (ja) 1986-11-10 1986-11-10 治工具の洗浄方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP26821786A JPS63123887A (ja) 1986-11-10 1986-11-10 治工具の洗浄方法

Publications (2)

Publication Number Publication Date
JPS63123887A JPS63123887A (ja) 1988-05-27
JPH0510302B2 true JPH0510302B2 (enrdf_load_stackoverflow) 1993-02-09

Family

ID=17455540

Family Applications (1)

Application Number Title Priority Date Filing Date
JP26821786A Granted JPS63123887A (ja) 1986-11-10 1986-11-10 治工具の洗浄方法

Country Status (1)

Country Link
JP (1) JPS63123887A (enrdf_load_stackoverflow)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3307370B2 (ja) 1999-07-16 2002-07-24 日本電気株式会社 半導体製造装置用治具及びその使用方法

Also Published As

Publication number Publication date
JPS63123887A (ja) 1988-05-27

Similar Documents

Publication Publication Date Title
US6194327B1 (en) Rapid thermal etch and rapid thermal oxidation
JPH0510302B2 (enrdf_load_stackoverflow)
JP4131105B2 (ja) シリコンボートの製造方法
JPS63129633A (ja) 半導体表面処理方法
EP0275182A2 (en) Pre-metal deposition cleaning for bipolar semiconductors
JPH10199848A (ja) 炭化ケイ素ウエハの表面汚染除去方法および炭化ケイ素ウエハ
JPH09232264A (ja) 半導体装置の製造方法
KR950001931A (ko) 반도체 기판의 열처리 방법
KR100423754B1 (ko) 실리콘 웨이퍼의 고온 열처리 방법
JP3036366B2 (ja) 半導体シリコンウェハの処理方法
JP2837423B2 (ja) 半導体基板の前処理方法
JPS6092611A (ja) 半導体素子の不純物拡散方法
JP2601208B2 (ja) 半導体基体の処理方法
JP3354947B2 (ja) 半導体基板の製法
JP2991176B2 (ja) 半導体装置の製造方法
JPH0472727A (ja) ガス洗浄法
JP3307370B2 (ja) 半導体製造装置用治具及びその使用方法
JPH01175229A (ja) 半導体装置の製造方法
KR960019592A (ko) 웨이퍼에서의 불순물 농도 감소 방법
KR100219071B1 (ko) 반도체 웨이퍼 세정 방법
JPH06140411A (ja) 半導体装置用シリコン基板
JPH01255217A (ja) 半導体装置の製造方法
JP2003100739A (ja) シリコンウエハの選択酸化方法
JPH0714827A (ja) 半導体装置の製造方法
JPH033385B2 (enrdf_load_stackoverflow)