JPH0510302B2 - - Google Patents
Info
- Publication number
- JPH0510302B2 JPH0510302B2 JP26821786A JP26821786A JPH0510302B2 JP H0510302 B2 JPH0510302 B2 JP H0510302B2 JP 26821786 A JP26821786 A JP 26821786A JP 26821786 A JP26821786 A JP 26821786A JP H0510302 B2 JPH0510302 B2 JP H0510302B2
- Authority
- JP
- Japan
- Prior art keywords
- sic
- oxide film
- tools
- cleaning
- heat treatment
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000000034 method Methods 0.000 claims description 15
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 14
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 13
- 238000004140 cleaning Methods 0.000 claims description 12
- 238000010438 heat treatment Methods 0.000 claims description 9
- 239000012298 atmosphere Substances 0.000 claims description 7
- 239000004065 semiconductor Substances 0.000 claims description 5
- 239000002253 acid Substances 0.000 claims description 4
- 239000000758 substrate Substances 0.000 claims description 4
- 239000012299 nitrogen atmosphere Substances 0.000 claims description 3
- 230000001590 oxidative effect Effects 0.000 claims description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 11
- 229910052814 silicon oxide Inorganic materials 0.000 description 11
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 10
- 229910052581 Si3N4 Inorganic materials 0.000 description 8
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 8
- 239000000356 contaminant Substances 0.000 description 6
- 229910052757 nitrogen Inorganic materials 0.000 description 5
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 4
- 239000001301 oxygen Substances 0.000 description 4
- 229910052760 oxygen Inorganic materials 0.000 description 4
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 229910003925 SiC 1 Inorganic materials 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 239000003513 alkali Substances 0.000 description 1
- 229910001385 heavy metal Inorganic materials 0.000 description 1
- 238000005121 nitriding Methods 0.000 description 1
- 231100000989 no adverse effect Toxicity 0.000 description 1
Landscapes
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Formation Of Insulating Films (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP26821786A JPS63123887A (ja) | 1986-11-10 | 1986-11-10 | 治工具の洗浄方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP26821786A JPS63123887A (ja) | 1986-11-10 | 1986-11-10 | 治工具の洗浄方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS63123887A JPS63123887A (ja) | 1988-05-27 |
JPH0510302B2 true JPH0510302B2 (enrdf_load_stackoverflow) | 1993-02-09 |
Family
ID=17455540
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP26821786A Granted JPS63123887A (ja) | 1986-11-10 | 1986-11-10 | 治工具の洗浄方法 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS63123887A (enrdf_load_stackoverflow) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3307370B2 (ja) | 1999-07-16 | 2002-07-24 | 日本電気株式会社 | 半導体製造装置用治具及びその使用方法 |
-
1986
- 1986-11-10 JP JP26821786A patent/JPS63123887A/ja active Granted
Also Published As
Publication number | Publication date |
---|---|
JPS63123887A (ja) | 1988-05-27 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US6194327B1 (en) | Rapid thermal etch and rapid thermal oxidation | |
JPH0510302B2 (enrdf_load_stackoverflow) | ||
JP4131105B2 (ja) | シリコンボートの製造方法 | |
JPS63129633A (ja) | 半導体表面処理方法 | |
EP0275182A2 (en) | Pre-metal deposition cleaning for bipolar semiconductors | |
JPH10199848A (ja) | 炭化ケイ素ウエハの表面汚染除去方法および炭化ケイ素ウエハ | |
JPH09232264A (ja) | 半導体装置の製造方法 | |
KR950001931A (ko) | 반도체 기판의 열처리 방법 | |
KR100423754B1 (ko) | 실리콘 웨이퍼의 고온 열처리 방법 | |
JP3036366B2 (ja) | 半導体シリコンウェハの処理方法 | |
JP2837423B2 (ja) | 半導体基板の前処理方法 | |
JPS6092611A (ja) | 半導体素子の不純物拡散方法 | |
JP2601208B2 (ja) | 半導体基体の処理方法 | |
JP3354947B2 (ja) | 半導体基板の製法 | |
JP2991176B2 (ja) | 半導体装置の製造方法 | |
JPH0472727A (ja) | ガス洗浄法 | |
JP3307370B2 (ja) | 半導体製造装置用治具及びその使用方法 | |
JPH01175229A (ja) | 半導体装置の製造方法 | |
KR960019592A (ko) | 웨이퍼에서의 불순물 농도 감소 방법 | |
KR100219071B1 (ko) | 반도체 웨이퍼 세정 방법 | |
JPH06140411A (ja) | 半導体装置用シリコン基板 | |
JPH01255217A (ja) | 半導体装置の製造方法 | |
JP2003100739A (ja) | シリコンウエハの選択酸化方法 | |
JPH0714827A (ja) | 半導体装置の製造方法 | |
JPH033385B2 (enrdf_load_stackoverflow) |