JPS63123887A - 治工具の洗浄方法 - Google Patents
治工具の洗浄方法Info
- Publication number
- JPS63123887A JPS63123887A JP26821786A JP26821786A JPS63123887A JP S63123887 A JPS63123887 A JP S63123887A JP 26821786 A JP26821786 A JP 26821786A JP 26821786 A JP26821786 A JP 26821786A JP S63123887 A JPS63123887 A JP S63123887A
- Authority
- JP
- Japan
- Prior art keywords
- cleaning
- silicon
- heat treatment
- jigs
- tools
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000034 method Methods 0.000 title claims description 14
- 238000004140 cleaning Methods 0.000 title claims description 12
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 10
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 9
- 238000010438 heat treatment Methods 0.000 claims description 8
- 239000012298 atmosphere Substances 0.000 claims description 7
- 239000004065 semiconductor Substances 0.000 claims description 5
- 239000000758 substrate Substances 0.000 claims description 4
- 239000002253 acid Substances 0.000 claims description 3
- 239000012299 nitrogen atmosphere Substances 0.000 claims description 3
- 230000001590 oxidative effect Effects 0.000 claims description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 9
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 7
- 229910052581 Si3N4 Inorganic materials 0.000 description 6
- 239000000356 contaminant Substances 0.000 description 6
- 229910052814 silicon oxide Inorganic materials 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 229910052757 nitrogen Inorganic materials 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000005121 nitriding Methods 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical group [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 230000002411 adverse Effects 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 229910001385 heavy metal Inorganic materials 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
Landscapes
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Formation Of Insulating Films (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP26821786A JPS63123887A (ja) | 1986-11-10 | 1986-11-10 | 治工具の洗浄方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP26821786A JPS63123887A (ja) | 1986-11-10 | 1986-11-10 | 治工具の洗浄方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS63123887A true JPS63123887A (ja) | 1988-05-27 |
JPH0510302B2 JPH0510302B2 (enrdf_load_stackoverflow) | 1993-02-09 |
Family
ID=17455540
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP26821786A Granted JPS63123887A (ja) | 1986-11-10 | 1986-11-10 | 治工具の洗浄方法 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS63123887A (enrdf_load_stackoverflow) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6458707B1 (en) | 1999-07-16 | 2002-10-01 | Nec Corporation | Tool for semiconductor manufacturing apparatus and method for using the same |
-
1986
- 1986-11-10 JP JP26821786A patent/JPS63123887A/ja active Granted
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6458707B1 (en) | 1999-07-16 | 2002-10-01 | Nec Corporation | Tool for semiconductor manufacturing apparatus and method for using the same |
Also Published As
Publication number | Publication date |
---|---|
JPH0510302B2 (enrdf_load_stackoverflow) | 1993-02-09 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US6194327B1 (en) | Rapid thermal etch and rapid thermal oxidation | |
JP3285723B2 (ja) | 半導体熱処理用治具及びその表面処理方法 | |
JPS63123887A (ja) | 治工具の洗浄方法 | |
JPH04102316A (ja) | 半導体ウエーハヘのボロン拡散方法 | |
JPS63129633A (ja) | 半導体表面処理方法 | |
TW490769B (en) | Silicon boat with protective film, its manufacture method, and silicon wafer heat-treated using silicon boat | |
JPS59191327A (ja) | 熱処理用治具 | |
KR950001931A (ko) | 반도체 기판의 열처리 방법 | |
JP3036366B2 (ja) | 半導体シリコンウェハの処理方法 | |
KR100423754B1 (ko) | 실리콘 웨이퍼의 고온 열처리 방법 | |
JP2601208B2 (ja) | 半導体基体の処理方法 | |
JPS63127531A (ja) | 半導体装置の製造方法 | |
JPS6092611A (ja) | 半導体素子の不純物拡散方法 | |
JPH0223023B2 (enrdf_load_stackoverflow) | ||
JP3354947B2 (ja) | 半導体基板の製法 | |
JP3375593B2 (ja) | 半導体シリコン基板の不純物拡散方法 | |
US6458707B1 (en) | Tool for semiconductor manufacturing apparatus and method for using the same | |
JPH05152236A (ja) | 半導体装置の製造方法 | |
JPS6362326A (ja) | 半導体装置の製造方法 | |
TW459278B (en) | Process of cleaning furnace capable of decreasing particle contamination | |
KR100305204B1 (ko) | 반도체소자의게이트산화막형성방법 | |
JPH01175229A (ja) | 半導体装置の製造方法 | |
JPS622548A (ja) | 膜形成法 | |
KR20000041388A (ko) | 실리콘 웨이퍼의 표면결함 제거를 위한 반도체 소자 제조방법 | |
JPH03109732A (ja) | 半導体装置の洗浄方法 |