JPH033385B2 - - Google Patents
Info
- Publication number
- JPH033385B2 JPH033385B2 JP17667780A JP17667780A JPH033385B2 JP H033385 B2 JPH033385 B2 JP H033385B2 JP 17667780 A JP17667780 A JP 17667780A JP 17667780 A JP17667780 A JP 17667780A JP H033385 B2 JPH033385 B2 JP H033385B2
- Authority
- JP
- Japan
- Prior art keywords
- silicon
- film
- substrate
- silicon substrate
- nitride
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Drying Of Semiconductors (AREA)
- Weting (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP17667780A JPS57100735A (en) | 1980-12-15 | 1980-12-15 | Treating method for surface of semiconductor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP17667780A JPS57100735A (en) | 1980-12-15 | 1980-12-15 | Treating method for surface of semiconductor |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS57100735A JPS57100735A (en) | 1982-06-23 |
JPH033385B2 true JPH033385B2 (enrdf_load_stackoverflow) | 1991-01-18 |
Family
ID=16017784
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP17667780A Granted JPS57100735A (en) | 1980-12-15 | 1980-12-15 | Treating method for surface of semiconductor |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS57100735A (enrdf_load_stackoverflow) |
-
1980
- 1980-12-15 JP JP17667780A patent/JPS57100735A/ja active Granted
Also Published As
Publication number | Publication date |
---|---|
JPS57100735A (en) | 1982-06-23 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US8187487B2 (en) | Material removal methods employing solutions with reversible ETCH selectivities | |
KR100741442B1 (ko) | 반도체 장치 및 반도체 장치의 제조 방법 | |
US4808259A (en) | Plasma etching process for MOS circuit pregate etching utiliizing a multi-step power reduction recipe | |
US9373501B2 (en) | Hydroxyl group termination for nucleation of a dielectric metallic oxide | |
JPH0718011B2 (ja) | SiO2の付着方法 | |
US5880031A (en) | Method for vapor phase wafer cleaning | |
JP3071284B2 (ja) | 半導体素子の製造方法 | |
JPH033385B2 (enrdf_load_stackoverflow) | ||
JPH10270434A (ja) | 半導体ウエーハの洗浄方法及び酸化膜の形成方法 | |
JPH0628259B2 (ja) | 半導体装置の製造方法 | |
JP2504558B2 (ja) | 熱酸化膜の形成方法 | |
JPH07297151A (ja) | 半導体装置の製造方法 | |
JP3917282B2 (ja) | 半導体基板表面の絶縁膜の形成方法 | |
JPH0513395A (ja) | シリコンウエハ−及び洗浄方法 | |
JP2602598B2 (ja) | 半導体基板の処理方法 | |
JPH07176504A (ja) | 半導体装置の製造方法 | |
JP2808933B2 (ja) | 半導体装置の製造方法 | |
JPH0799178A (ja) | 半導体装置の製造方法 | |
KR0168208B1 (ko) | 다중합체 제거방법 | |
JPH04208535A (ja) | 半導体装置の製造方法 | |
JPH0653518A (ja) | トンネル絶縁膜の形成方法 | |
JP2002270848A (ja) | 半導体装置の製造方法 | |
JPH0516177B2 (enrdf_load_stackoverflow) | ||
KR19990057823A (ko) | 코발트실리사이드층 형성 방법 및 그를 이용한 반도체 장치 제조 방법 | |
JPH08250463A (ja) | 半導体装置の製造方法 |