JPH048943B2 - - Google Patents

Info

Publication number
JPH048943B2
JPH048943B2 JP56021311A JP2131181A JPH048943B2 JP H048943 B2 JPH048943 B2 JP H048943B2 JP 56021311 A JP56021311 A JP 56021311A JP 2131181 A JP2131181 A JP 2131181A JP H048943 B2 JPH048943 B2 JP H048943B2
Authority
JP
Japan
Prior art keywords
barrier
dopant
contact
layer
density
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP56021311A
Other languages
English (en)
Japanese (ja)
Other versions
JPS56131965A (en
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPS56131965A publication Critical patent/JPS56131965A/ja
Publication of JPH048943B2 publication Critical patent/JPH048943B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/2654—Bombardment with radiation with high-energy radiation producing ion implantation in AIIIBV compounds
    • H01L21/26546—Bombardment with radiation with high-energy radiation producing ion implantation in AIIIBV compounds of electrically active species
    • H01L21/26553—Through-implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28575—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising AIIIBV compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28575—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising AIIIBV compounds
    • H01L21/28581—Deposition of Schottky electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/061—Manufacture or treatment of FETs having Schottky gates
    • H10D30/0612—Manufacture or treatment of FETs having Schottky gates of lateral single-gate Schottky FETs
    • H10D30/0614—Manufacture or treatment of FETs having Schottky gates of lateral single-gate Schottky FETs using processes wherein the final gate is made after the completion of the source and drain regions, e.g. gate-last processes using dummy gates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/60—Impurity distributions or concentrations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/60—Schottky-barrier diodes 

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Junction Field-Effect Transistors (AREA)
JP2131181A 1980-02-15 1981-02-16 Method of producing semiconductor device Granted JPS56131965A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19803005733 DE3005733A1 (de) 1980-02-15 1980-02-15 Verfahren zur herstellung einer halbleiteranordnung und nach diesem verfahren hergestellte halbleiteranordnung

Publications (2)

Publication Number Publication Date
JPS56131965A JPS56131965A (en) 1981-10-15
JPH048943B2 true JPH048943B2 (en, 2012) 1992-02-18

Family

ID=6094732

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2131181A Granted JPS56131965A (en) 1980-02-15 1981-02-16 Method of producing semiconductor device

Country Status (4)

Country Link
US (1) US4377030A (en, 2012)
EP (1) EP0034729B1 (en, 2012)
JP (1) JPS56131965A (en, 2012)
DE (2) DE3005733A1 (en, 2012)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20180080123A (ko) * 2016-02-23 2018-07-11 선전 구딕스 테크놀로지 컴퍼니, 리미티드 패키지 구조, 전자기기 및 패키지 구조의 제조방법

Families Citing this family (33)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57178373A (en) * 1981-04-27 1982-11-02 Sumitomo Electric Ind Ltd Schottky gate field-effect transistor
DE3124572A1 (de) * 1981-06-23 1982-12-30 Siemens AG, 1000 Berlin und 8000 München Verfahren zur herstellung von schottky-dioden
US4426765A (en) 1981-08-24 1984-01-24 Trw Inc. Process for fabrication of ohmic contacts in compound semiconductor devices
JPS5874084A (ja) * 1981-10-29 1983-05-04 Fujitsu Ltd 半導体装置
JPS58130575A (ja) * 1982-01-29 1983-08-04 Hitachi Ltd 電界効果トランジスタの製造方法
US4639275A (en) * 1982-04-22 1987-01-27 The Board Of Trustees Of The University Of Illinois Forming disordered layer by controlled diffusion in heterojunction III-V semiconductor
US4638551A (en) * 1982-09-24 1987-01-27 General Instrument Corporation Schottky barrier device and method of manufacture
US4633282A (en) * 1982-10-04 1986-12-30 Rockwell International Corporation Metal-semiconductor field-effect transistor with a partial p-type drain
US4519127A (en) * 1983-02-28 1985-05-28 Tokyo Shibaura Denki Kabushiki Kaisha Method of manufacturing a MESFET by controlling implanted peak surface dopants
US4494995A (en) * 1983-03-01 1985-01-22 The United States Of America As Represented By The Secretary Of The Navy Dual species ion implantation of ternary compounds based on In-Ga-As
GB2137412B (en) * 1983-03-15 1987-03-04 Standard Telephones Cables Ltd Semiconductor device
GB2137806B (en) * 1983-04-05 1986-10-08 Standard Telephones Cables Ltd Ion implantation in semiconductor bodies
JPS605570A (ja) * 1983-06-09 1985-01-12 Fujitsu Ltd 半導体装置の製造方法
USH390H (en) 1983-06-17 1987-12-01 The United States Of America As Represented By The Secretary Of The Air Force Self-aligned gate MESFET and the method of fabricating same
US4540446A (en) * 1983-09-19 1985-09-10 Oki Electric Industry Co., Ltd. Method of forming ohmic contact on GaAs by Ge film and implanting impurity ions therethrough
JPS6086866A (ja) * 1983-10-19 1985-05-16 Matsushita Electronics Corp 電界効果トランジスタおよびその製造方法
US4602965A (en) * 1984-03-13 1986-07-29 Communications Satellite Corporation Method of making FETs in GaAs by dual species implantation of silicon and boron
US4570324A (en) * 1984-10-17 1986-02-18 The University Of Dayton Stable ohmic contacts for gallium arsenide semiconductors
US5272358A (en) * 1986-08-13 1993-12-21 Hitachi, Ltd. Superconducting device
US4742377A (en) * 1985-02-21 1988-05-03 General Instrument Corporation Schottky barrier device with doped composite guard ring
JPS62199068A (ja) * 1986-02-27 1987-09-02 Toshiba Corp 半導体装置及びその製造方法
JP2645993B2 (ja) * 1986-06-12 1997-08-25 富士通株式会社 電界効果型半導体装置及びその製造方法
US4788156A (en) * 1986-09-24 1988-11-29 Microwave Technology, Inc. Subchannel doping to reduce short-gate effects in field effect transistors
KR910003826A (ko) * 1989-07-03 1991-02-28 빈센트 죠셉 로너 저 전류 레벨에서 개선된 성능을 갖는 저 잡음 및 고 이득의 mesfet 제조방법
DE58909785D1 (de) * 1989-11-28 1997-04-10 Siemens Ag Halbleiterscheibe mit dotiertem Ritzrahmen
JP3243146B2 (ja) * 1994-12-08 2002-01-07 株式会社東芝 半導体装置
US5637113A (en) * 1994-12-13 1997-06-10 Advanced Cardiovascular Systems, Inc. Polymer film for wrapping a stent structure
DE19631744C1 (de) * 1996-08-06 1998-03-12 Siemens Ag Verfahren zur Herstellung eines Feldeffekttransistors
ATE283524T1 (de) † 1998-07-27 2004-12-15 Infineon Technologies Ag Sicherheitspapier sowie verfahren und vorrichtung zur prüfung der echtheit darauf aufgezeichneter urkunden
DE10217610B4 (de) * 2002-04-19 2005-11-03 Infineon Technologies Ag Metall-Halbleiter-Kontakt, Halbleiterbauelement, integrierte Schaltungsanordnung und Verfahren
US7144422B1 (en) * 2002-11-13 2006-12-05 Advanced Cardiovascular Systems, Inc. Drug-eluting stent and methods of making the same
US7435255B1 (en) 2002-11-13 2008-10-14 Advnaced Cardiovascular Systems, Inc. Drug-eluting stent and methods of making
US7105018B1 (en) * 2002-12-30 2006-09-12 Advanced Cardiovascular Systems, Inc. Drug-eluting stent cover and method of use

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51120674A (en) * 1975-04-16 1976-10-22 Hitachi Ltd Semiconductor device
US4096622A (en) * 1975-07-31 1978-06-27 General Motors Corporation Ion implanted Schottky barrier diode
US4265934A (en) * 1975-12-12 1981-05-05 Hughes Aircraft Company Method for making improved Schottky-barrier gate gallium arsenide field effect devices
DE2631873C2 (de) * 1976-07-15 1986-07-31 Siemens AG, 1000 Berlin und 8000 München Verfahren zur Herstellung eines Halbleiterbauelements mit einem Schottky-Kontakt auf einem zu einem anderen Bereich justierten Gatebereich und mit kleinem Serienwiderstand
GB2005916A (en) * 1977-10-12 1979-04-25 Microwave Semiconductor Corp Low resistivity ohmic contacts for semiconductor devices
US4196439A (en) * 1978-07-03 1980-04-01 Bell Telephone Laboratories, Incorporated Semiconductor device drain contact configuration
US4188710A (en) * 1978-08-11 1980-02-19 The United States Of America As Represented By The Secretary Of The Navy Ohmic contacts for group III-V n-type semiconductors using epitaxial germanium films
US4213840A (en) * 1978-11-13 1980-07-22 Avantek, Inc. Low-resistance, fine-line semiconductor device and the method for its manufacture
US4272561A (en) * 1979-05-29 1981-06-09 International Business Machines Corporation Hybrid process for SBD metallurgies
US4301188A (en) * 1979-10-01 1981-11-17 Bell Telephone Laboratories, Incorporated Process for producing contact to GaAs active region
JPS5667974A (en) * 1979-10-26 1981-06-08 Ibm Method of manufacturing semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20180080123A (ko) * 2016-02-23 2018-07-11 선전 구딕스 테크놀로지 컴퍼니, 리미티드 패키지 구조, 전자기기 및 패키지 구조의 제조방법

Also Published As

Publication number Publication date
EP0034729A2 (de) 1981-09-02
EP0034729B1 (de) 1991-10-30
US4377030A (en) 1983-03-22
DE3177263D1 (de) 1991-12-05
JPS56131965A (en) 1981-10-15
EP0034729A3 (en) 1985-12-04
DE3005733A1 (de) 1981-08-20

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