GB2005916A - Low resistivity ohmic contacts for semiconductor devices - Google Patents

Low resistivity ohmic contacts for semiconductor devices

Info

Publication number
GB2005916A
GB2005916A GB7839344A GB7839344A GB2005916A GB 2005916 A GB2005916 A GB 2005916A GB 7839344 A GB7839344 A GB 7839344A GB 7839344 A GB7839344 A GB 7839344A GB 2005916 A GB2005916 A GB 2005916A
Authority
GB
United Kingdom
Prior art keywords
semiconductor devices
low resistivity
ohmic contacts
type
resistivity ohmic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
GB7839344A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Microwave Semiconductor Corp
Original Assignee
Microwave Semiconductor Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Microwave Semiconductor Corp filed Critical Microwave Semiconductor Corp
Publication of GB2005916A publication Critical patent/GB2005916A/en
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/45—Ohmic electrodes
    • H01L29/452—Ohmic electrodes on AIII-BV compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
    • H01L21/2855—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table by physical means, e.g. sputtering, evaporation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28575—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising AIIIBV compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Junction Field-Effect Transistors (AREA)

Abstract

Semiconductor material is doped in the region (17) below the contacts a (14) with n-type and p-type impurities each within two orders of magnitude of the maximum concentration for the semiconductor material, to reduce resistivity. To ensure the desired conductivity type in the region, the concentration of the dominant type impurity is greater than twice that of the opposite type. <IMAGE>
GB7839344A 1977-10-12 1978-10-04 Low resistivity ohmic contacts for semiconductor devices Withdrawn GB2005916A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US84155377A 1977-10-12 1977-10-12

Publications (1)

Publication Number Publication Date
GB2005916A true GB2005916A (en) 1979-04-25

Family

ID=25285168

Family Applications (1)

Application Number Title Priority Date Filing Date
GB7839344A Withdrawn GB2005916A (en) 1977-10-12 1978-10-04 Low resistivity ohmic contacts for semiconductor devices

Country Status (5)

Country Link
JP (1) JPS5461871A (en)
DE (1) DE2844257A1 (en)
FR (1) FR2406306A1 (en)
GB (1) GB2005916A (en)
IT (1) IT7869349A0 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0034729A2 (en) * 1980-02-15 1981-09-02 Siemens Aktiengesellschaft Process for the manufacture of a GaAs semiconductor arrangement

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5144410A (en) * 1989-03-29 1992-09-01 Vitesse Semiconductor Corporation Ohmic contact for III-V semiconductor devices

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0034729A2 (en) * 1980-02-15 1981-09-02 Siemens Aktiengesellschaft Process for the manufacture of a GaAs semiconductor arrangement
EP0034729A3 (en) * 1980-02-15 1985-12-04 Siemens Aktiengesellschaft Process for the manufacture of an a iii b v semiconductor arrangement and semiconductor device made by this process

Also Published As

Publication number Publication date
JPS5461871A (en) 1979-05-18
IT7869349A0 (en) 1978-10-11
FR2406306A1 (en) 1979-05-11
DE2844257A1 (en) 1979-04-19

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Legal Events

Date Code Title Description
WAP Application withdrawn, taken to be withdrawn or refused ** after publication under section 16(1)