JPH0481323B2 - - Google Patents
Info
- Publication number
- JPH0481323B2 JPH0481323B2 JP58055957A JP5595783A JPH0481323B2 JP H0481323 B2 JPH0481323 B2 JP H0481323B2 JP 58055957 A JP58055957 A JP 58055957A JP 5595783 A JP5595783 A JP 5595783A JP H0481323 B2 JPH0481323 B2 JP H0481323B2
- Authority
- JP
- Japan
- Prior art keywords
- insulating film
- film
- forming
- contact hole
- spacer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000010410 layer Substances 0.000 claims description 25
- 238000001312 dry etching Methods 0.000 claims description 23
- 125000006850 spacer group Chemical group 0.000 claims description 19
- 239000000758 substrate Substances 0.000 claims description 14
- 239000004065 semiconductor Substances 0.000 claims description 12
- 238000005530 etching Methods 0.000 claims description 10
- 238000004519 manufacturing process Methods 0.000 claims description 7
- 239000000463 material Substances 0.000 claims description 3
- 239000011229 interlayer Substances 0.000 claims description 2
- 238000009499 grossing Methods 0.000 claims 1
- 238000000034 method Methods 0.000 description 25
- 238000009792 diffusion process Methods 0.000 description 20
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 17
- 229910004298 SiO 2 Inorganic materials 0.000 description 15
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 6
- 230000000694 effects Effects 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 238000012544 monitoring process Methods 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 238000000059 patterning Methods 0.000 description 3
- 238000004140 cleaning Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 238000010849 ion bombardment Methods 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000007733 ion plating Methods 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 238000005121 nitriding Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 230000002250 progressing effect Effects 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electrodes Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5595783A JPS59181614A (ja) | 1983-03-31 | 1983-03-31 | 半導体装置の製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5595783A JPS59181614A (ja) | 1983-03-31 | 1983-03-31 | 半導体装置の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS59181614A JPS59181614A (ja) | 1984-10-16 |
| JPH0481323B2 true JPH0481323B2 (ko) | 1992-12-22 |
Family
ID=13013553
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP5595783A Granted JPS59181614A (ja) | 1983-03-31 | 1983-03-31 | 半導体装置の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS59181614A (ko) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH03151638A (ja) * | 1989-11-08 | 1991-06-27 | Nissan Motor Co Ltd | 半導体集積回路の製造方法 |
| KR0171733B1 (ko) * | 1995-08-28 | 1999-03-30 | 김주용 | 반도체 소자의 콘택홀 형성 방법 |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4359816A (en) * | 1980-07-08 | 1982-11-23 | International Business Machines Corporation | Self-aligned metal process for field effect transistor integrated circuits |
| JPS5772321A (en) * | 1980-10-24 | 1982-05-06 | Toshiba Corp | Manufacture of seiconductor device |
| JPS57115861A (en) * | 1981-01-10 | 1982-07-19 | Mitsubishi Electric Corp | Semiconductor memory device |
-
1983
- 1983-03-31 JP JP5595783A patent/JPS59181614A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS59181614A (ja) | 1984-10-16 |
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