JPH0480540B2 - - Google Patents
Info
- Publication number
- JPH0480540B2 JPH0480540B2 JP58005084A JP508483A JPH0480540B2 JP H0480540 B2 JPH0480540 B2 JP H0480540B2 JP 58005084 A JP58005084 A JP 58005084A JP 508483 A JP508483 A JP 508483A JP H0480540 B2 JPH0480540 B2 JP H0480540B2
- Authority
- JP
- Japan
- Prior art keywords
- insulating film
- layer
- semiconductor
- conductive layer
- capacitor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000004065 semiconductor Substances 0.000 claims description 42
- 239000003990 capacitor Substances 0.000 claims description 37
- 239000000758 substrate Substances 0.000 claims description 22
- 239000004020 conductor Substances 0.000 claims description 18
- 238000004519 manufacturing process Methods 0.000 claims description 9
- 238000010030 laminating Methods 0.000 claims description 2
- 230000000149 penetrating effect Effects 0.000 claims 1
- 230000015654 memory Effects 0.000 description 15
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 11
- 229920005591 polysilicon Polymers 0.000 description 11
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 8
- 239000013078 crystal Substances 0.000 description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- 238000000034 method Methods 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 6
- 239000010703 silicon Substances 0.000 description 6
- 230000005540 biological transmission Effects 0.000 description 5
- 238000009792 diffusion process Methods 0.000 description 4
- 230000010354 integration Effects 0.000 description 4
- 235000012239 silicon dioxide Nutrition 0.000 description 3
- 239000000377 silicon dioxide Substances 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- 238000009825 accumulation Methods 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 230000014759 maintenance of location Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
- H10B12/33—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells the capacitor extending under the transistor
Landscapes
- Semiconductor Memories (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58005084A JPS59129461A (ja) | 1983-01-13 | 1983-01-13 | 半導体装置とその製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58005084A JPS59129461A (ja) | 1983-01-13 | 1983-01-13 | 半導体装置とその製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS59129461A JPS59129461A (ja) | 1984-07-25 |
| JPH0480540B2 true JPH0480540B2 (ko) | 1992-12-18 |
Family
ID=11601518
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58005084A Granted JPS59129461A (ja) | 1983-01-13 | 1983-01-13 | 半導体装置とその製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS59129461A (ko) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0168528B1 (de) * | 1984-04-25 | 1989-03-08 | Siemens Aktiengesellschaft | Ein-Transistor-Speicherzelle für hochintegrierte dynamische Halbleiterspeicher und Verfahren zu ihrer Herstellung |
| JPS60250665A (ja) * | 1984-05-25 | 1985-12-11 | Mitsubishi Electric Corp | 半導体記憶装置 |
| US5306648A (en) * | 1986-01-24 | 1994-04-26 | Canon Kabushiki Kaisha | Method of making photoelectric conversion device |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5519820A (en) * | 1978-07-27 | 1980-02-12 | Nec Corp | Semiconductor device |
| JPS5687359A (en) * | 1979-12-19 | 1981-07-15 | Fujitsu Ltd | Manufacture of one transistor type memory cell |
| JPS58212160A (ja) * | 1982-06-02 | 1983-12-09 | Toshiba Corp | 半導体記憶装置 |
| JPS59110154A (ja) * | 1982-12-16 | 1984-06-26 | Nec Corp | 半導体メモリセル |
-
1983
- 1983-01-13 JP JP58005084A patent/JPS59129461A/ja active Granted
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5519820A (en) * | 1978-07-27 | 1980-02-12 | Nec Corp | Semiconductor device |
| JPS5687359A (en) * | 1979-12-19 | 1981-07-15 | Fujitsu Ltd | Manufacture of one transistor type memory cell |
| JPS58212160A (ja) * | 1982-06-02 | 1983-12-09 | Toshiba Corp | 半導体記憶装置 |
| JPS59110154A (ja) * | 1982-12-16 | 1984-06-26 | Nec Corp | 半導体メモリセル |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS59129461A (ja) | 1984-07-25 |
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