JPH047531B2 - - Google Patents
Info
- Publication number
- JPH047531B2 JPH047531B2 JP23988483A JP23988483A JPH047531B2 JP H047531 B2 JPH047531 B2 JP H047531B2 JP 23988483 A JP23988483 A JP 23988483A JP 23988483 A JP23988483 A JP 23988483A JP H047531 B2 JPH047531 B2 JP H047531B2
- Authority
- JP
- Japan
- Prior art keywords
- sputtering
- target
- target member
- film
- silicon
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000004544 sputter deposition Methods 0.000 claims description 30
- 230000005684 electric field Effects 0.000 claims description 12
- 239000013077 target material Substances 0.000 claims description 9
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 4
- 239000000463 material Substances 0.000 claims description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 27
- 229910052710 silicon Inorganic materials 0.000 description 27
- 239000010703 silicon Substances 0.000 description 27
- 239000010408 film Substances 0.000 description 23
- 229910052751 metal Inorganic materials 0.000 description 19
- 239000002184 metal Substances 0.000 description 19
- 210000002381 plasma Anatomy 0.000 description 18
- 238000002844 melting Methods 0.000 description 17
- 230000008018 melting Effects 0.000 description 17
- 239000000758 substrate Substances 0.000 description 14
- 238000000034 method Methods 0.000 description 12
- 238000009826 distribution Methods 0.000 description 10
- 235000012431 wafers Nutrition 0.000 description 10
- 230000002159 abnormal effect Effects 0.000 description 8
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 7
- 229910052750 molybdenum Inorganic materials 0.000 description 7
- 239000011733 molybdenum Substances 0.000 description 7
- 238000005477 sputtering target Methods 0.000 description 7
- 229910045601 alloy Inorganic materials 0.000 description 6
- 239000000956 alloy Substances 0.000 description 6
- 238000010586 diagram Methods 0.000 description 6
- 238000000151 deposition Methods 0.000 description 5
- 239000000203 mixture Substances 0.000 description 5
- 239000002245 particle Substances 0.000 description 5
- 239000010409 thin film Substances 0.000 description 5
- 230000008021 deposition Effects 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 230000003628 erosive effect Effects 0.000 description 3
- 238000002474 experimental method Methods 0.000 description 3
- 229910021332 silicide Inorganic materials 0.000 description 3
- 238000012856 packing Methods 0.000 description 2
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 2
- 238000000137 annealing Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000010891 electric arc Methods 0.000 description 1
- 239000000696 magnetic material Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/3414—Targets
- H01J37/3426—Material
- H01J37/3429—Plural materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
- H01J37/3405—Magnetron sputtering
- H01J37/3408—Planar magnetron sputtering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/345—Magnet arrangements in particular for cathodic sputtering apparatus
- H01J37/3458—Electromagnets in particular for cathodic sputtering apparatus
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Electromagnetism (AREA)
- Physical Vapour Deposition (AREA)
- Microwave Tubes (AREA)
Priority Applications (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP23988483A JPS60133631A (ja) | 1983-12-21 | 1983-12-21 | マグネトロンスパツタ電極構造体 |
| US06/682,998 US4606802A (en) | 1983-12-21 | 1984-12-18 | Planar magnetron sputtering with modified field configuration |
| EP84115772A EP0148470B1 (en) | 1983-12-21 | 1984-12-19 | Planar magnetron sputtering with modified field configuration |
| DE8484115772T DE3479269D1 (en) | 1983-12-21 | 1984-12-19 | Planar magnetron sputtering with modified field configuration |
| KR1019840008168A KR890002746B1 (ko) | 1983-12-21 | 1984-12-20 | 수정된 필드 구성을 갖는 플레이너 마그네트론 스퍼터링 방법 및 그 장치 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP23988483A JPS60133631A (ja) | 1983-12-21 | 1983-12-21 | マグネトロンスパツタ電極構造体 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS60133631A JPS60133631A (ja) | 1985-07-16 |
| JPH047531B2 true JPH047531B2 (ko) | 1992-02-12 |
Family
ID=17051308
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP23988483A Granted JPS60133631A (ja) | 1983-12-21 | 1983-12-21 | マグネトロンスパツタ電極構造体 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS60133631A (ko) |
-
1983
- 1983-12-21 JP JP23988483A patent/JPS60133631A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS60133631A (ja) | 1985-07-16 |
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