JPH0472321A - Resin composition for sealing semiconductor and semiconductor device produced by using the same - Google Patents
Resin composition for sealing semiconductor and semiconductor device produced by using the sameInfo
- Publication number
- JPH0472321A JPH0472321A JP7555990A JP7555990A JPH0472321A JP H0472321 A JPH0472321 A JP H0472321A JP 7555990 A JP7555990 A JP 7555990A JP 7555990 A JP7555990 A JP 7555990A JP H0472321 A JPH0472321 A JP H0472321A
- Authority
- JP
- Japan
- Prior art keywords
- resin composition
- epoxy compound
- polyfunctional epoxy
- semiconductor
- resin
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims description 20
- 239000011342 resin composition Substances 0.000 title claims description 18
- 238000007789 sealing Methods 0.000 title description 9
- 239000003822 epoxy resin Substances 0.000 claims abstract description 23
- 229920000647 polyepoxide Polymers 0.000 claims abstract description 23
- 150000001875 compounds Chemical class 0.000 claims abstract description 16
- 239000004593 Epoxy Substances 0.000 claims abstract description 15
- 239000003795 chemical substances by application Substances 0.000 claims abstract description 10
- 239000011256 inorganic filler Substances 0.000 claims abstract description 6
- 229910003475 inorganic filler Inorganic materials 0.000 claims abstract description 6
- 238000005538 encapsulation Methods 0.000 claims description 8
- 239000000126 substance Substances 0.000 claims 2
- 238000005476 soldering Methods 0.000 abstract description 10
- 229920003986 novolac Polymers 0.000 abstract description 7
- RAXXELZNTBOGNW-UHFFFAOYSA-N imidazole Natural products C1=CNC=N1 RAXXELZNTBOGNW-UHFFFAOYSA-N 0.000 abstract description 6
- RIOQSEWOXXDEQQ-UHFFFAOYSA-N triphenylphosphine Chemical compound C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1 RIOQSEWOXXDEQQ-UHFFFAOYSA-N 0.000 abstract description 6
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N phenol group Chemical group C1(=CC=CC=C1)O ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 abstract description 4
- 239000000203 mixture Substances 0.000 abstract description 3
- 238000000034 method Methods 0.000 description 17
- 229920005989 resin Polymers 0.000 description 11
- 239000011347 resin Substances 0.000 description 11
- 238000010521 absorption reaction Methods 0.000 description 8
- 229910000679 solder Inorganic materials 0.000 description 8
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 7
- NIHNNTQXNPWCJQ-UHFFFAOYSA-N fluorene Chemical compound C1=CC=C2CC3=CC=CC=C3C2=C1 NIHNNTQXNPWCJQ-UHFFFAOYSA-N 0.000 description 6
- LNEPOXFFQSENCJ-UHFFFAOYSA-N haloperidol Chemical compound C1CC(O)(C=2C=CC(Cl)=CC=2)CCN1CCCC(=O)C1=CC=C(F)C=C1 LNEPOXFFQSENCJ-UHFFFAOYSA-N 0.000 description 5
- 238000002156 mixing Methods 0.000 description 5
- 238000011417 postcuring Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 239000000843 powder Substances 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 239000000654 additive Substances 0.000 description 2
- ADCOVFLJGNWWNZ-UHFFFAOYSA-N antimony trioxide Chemical compound O=[Sb]O[Sb]=O ADCOVFLJGNWWNZ-UHFFFAOYSA-N 0.000 description 2
- 238000005452 bending Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000005350 fused silica glass Substances 0.000 description 2
- 238000007654 immersion Methods 0.000 description 2
- 238000003780 insertion Methods 0.000 description 2
- 230000037431 insertion Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- QWVGKYWNOKOFNN-UHFFFAOYSA-N o-cresol Chemical compound CC1=CC=CC=C1O QWVGKYWNOKOFNN-UHFFFAOYSA-N 0.000 description 2
- HLLSOEKIMZEGFV-UHFFFAOYSA-N 4-(dibutylsulfamoyl)benzoic acid Chemical compound CCCCN(CCCC)S(=O)(=O)C1=CC=C(C(O)=O)C=C1 HLLSOEKIMZEGFV-UHFFFAOYSA-N 0.000 description 1
- 229930185605 Bisphenol Natural products 0.000 description 1
- ZJPGOXWRFNKIQL-JYJNAYRXSA-N Phe-Pro-Pro Chemical compound C([C@H](N)C(=O)N1[C@@H](CCC1)C(=O)N1[C@@H](CCC1)C(O)=O)C1=CC=CC=C1 ZJPGOXWRFNKIQL-JYJNAYRXSA-N 0.000 description 1
- 229910000831 Steel Inorganic materials 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 150000001412 amines Chemical class 0.000 description 1
- IISBACLAFKSPIT-UHFFFAOYSA-N bisphenol A Chemical compound C=1C=C(O)C=CC=1C(C)(C)C1=CC=C(O)C=C1 IISBACLAFKSPIT-UHFFFAOYSA-N 0.000 description 1
- 239000006229 carbon black Substances 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 239000007822 coupling agent Substances 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 229920001971 elastomer Polymers 0.000 description 1
- 239000002360 explosive Substances 0.000 description 1
- 239000003063 flame retardant Substances 0.000 description 1
- 125000003983 fluorenyl group Chemical group C1(=CC=CC=2C3=CC=CC=C3CC12)* 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000009477 glass transition Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000004898 kneading Methods 0.000 description 1
- 239000006082 mold release agent Substances 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 238000012536 packaging technology Methods 0.000 description 1
- 150000002989 phenols Chemical class 0.000 description 1
- 230000002250 progressing effect Effects 0.000 description 1
- 238000010298 pulverizing process Methods 0.000 description 1
- 230000002940 repellent Effects 0.000 description 1
- 239000005871 repellent Substances 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- 239000000454 talc Substances 0.000 description 1
- 229910052623 talc Inorganic materials 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 238000003856 thermoforming Methods 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 238000009834 vaporization Methods 0.000 description 1
- 230000008016 vaporization Effects 0.000 description 1
Landscapes
- Epoxy Resins (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は、低吸水性でハンダ耐熱性に優れ、かつ、低応
力性である半導体封止用樹脂組成物及びこれを用いた半
導体装置に関する。Detailed Description of the Invention [Field of Industrial Application] The present invention relates to a resin composition for semiconductor encapsulation that has low water absorption, excellent solder heat resistance, and low stress, and a semiconductor device using the same. .
近年、半導体装置の高集積化か急速に進められており、
素子サイズの大型化と配線の微細化が著しく進展してい
る。これら高集積化された半導体装置も含め、半導体装
置は現在そのほとんどか樹脂封止されているか、これは
信頼性の高い、優れた性能を有する封止用樹脂の開発に
よるところか大きい。In recent years, the integration of semiconductor devices has been rapidly progressing.
Significant progress has been made in increasing element size and miniaturizing interconnections. Currently, most semiconductor devices, including these highly integrated semiconductor devices, are encapsulated with resin, and this is largely due to the development of encapsulating resins that are highly reliable and have excellent performance.
一方、最近はプリント基板への部品実装においても高密
度化や自動化が進められており、従来のリードピンを基
板の穴に挿入する“挿入実装方式”に代わり、基板表面
に部品をハンダ付けする”表面実装方式”が盛んになっ
てきている。これに伴い、パッケージも従来のＤＩＰ型
から高密度実装、表面実装に適したＦＰＰ型に移行しつ
つある。On the other hand, recently, higher density and automation have been promoted in the mounting of components on printed circuit boards, and instead of the conventional "insertion mounting method" in which lead pins are inserted into holes in the board, components are soldered onto the surface of the board. "Surface mount method" is becoming popular. Along with this, packages are also shifting from the conventional DIP type to the FPP type, which is suitable for high-density mounting and surface mounting.
そして、表面実装方式への移行に伴い、従来あまり問題
とならなかったハンダ付は工程が大きな問題となってき
ている。従来のピン挿入実装方式では、ハンダ付は工程
ではり−ト部か部分的に加熱されるだけであったか、表
面実装方式ではパッケージの全体が加熱される。表面実
装方式におけるハンダ付は方式としては、ハンダ浴浸漬
、不活性ガスの飽和蒸気による加熱、赤外線リフローな
とか用いられるか、いずれの方法でもパンケージ全体か
２１０〜２６０℃の高温に晒される。このため、従来の
封止用樹脂で封止したパッケージは、ハンダ付は時に樹
脂部分にクラックか発生し、製品として使用できないと
いう問題か生じる。With the shift to surface mounting methods, the soldering process, which had not been a problem in the past, has become a major problem. In the conventional pin insertion mounting method, only the beam is partially heated during the soldering process, while in the surface mounting method, the entire package is heated. Soldering in the surface mounting method involves immersion in a solder bath, heating with saturated steam of inert gas, and infrared reflow, and in any of these methods, the entire pan cage is exposed to high temperatures of 210 to 260°C. For this reason, when a package is sealed with a conventional sealing resin, cracks sometimes occur in the resin portion when soldering is performed, resulting in a problem that the package cannot be used as a product.
ハンダ付は工程におけるクラックの発生は、後硬化させ
てから実装工程までの間に吸湿された水分か、ハンダ付
は加熱時に爆発的に水蒸気化し、膨張することに起因す
るといわれており、その対策として、後硬化したのち完
全に乾燥し、密封した容器に収納して出荷する方法か用
いられている。It is said that the occurrence of cracks in the soldering process is due to moisture absorbed during the process from post-curing to the mounting process, or due to the explosive vaporization and expansion of soldering when heated. After post-curing, it is completely dried, stored in a sealed container, and shipped.
ところで、封止用樹脂の改良も検討されている。By the way, improvements to the sealing resin are also being considered.
例えば、封止用樹脂にゴム成分を配合し、内部応力を低
下させる方法（特開昭５８−２１９．２１８号公報、特
開昭５９−９６．１２２号公報）や、発水性の添加剤や
ワックスにより吸水率を低下させ、ハンダ付は時の水分
による応力発生を下げる方法（特開昭６０６５、０２３
号公報）等がある。For example, there is a method of blending a rubber component into the sealing resin to reduce internal stress (Japanese Patent Application Laid-open No. 58-219.218, JP-A No. 59-96.122), water repellent additives, etc. A method of reducing water absorption with wax and reducing stress caused by moisture during soldering (Japanese Patent Application Laid-Open No. 6065, 023)
Publication No.) etc.
また、比較的吸水率の低い樹脂として、ジ（ヒドロキン
フェニル）フルオレンとエピハロヒドリンとを反応させ
て得られるエポキン樹脂か知られている。Epoquine resin, which is obtained by reacting di(hydroquinphenyl)fluorene and epihalohydrin, is also known as a resin with relatively low water absorption.
しかしながら、上記従来技術において、乾燥して密封し
た容器に収納する方式は、その製造工程及び製品の取扱
作業か煩雑となり、製造コストか著しく上昇する。However, in the above-mentioned conventional technology, the method of storing the product in a dry and sealed container complicates the manufacturing process and the handling of the product, and significantly increases the manufacturing cost.
また、各種方法で改良された樹脂も、それぞれ少しずつ
効果を上げてきてはいるが、実装技術の進歩に伴うより
高度な要求に応えるには充分でない。具体的には、これ
らの従来の方法で封止された半導体装置を吸湿処理後、
例えば８５℃／８５％ＲＨ処理７２時間後にハンダ浸漬
を行うと、パッケージダイパッド裏側に、膨れ又はクラ
ックが発生する。すなわち、ハンダ付は時のクランクを
完全に防止した封止用樹脂は得られておらず、よりハン
ダ耐熱性に優れた封止用樹脂の開発か望まれている。In addition, resins that have been improved using various methods are gradually becoming more effective, but they are not sufficient to meet the more advanced demands that accompany advances in packaging technology. Specifically, after moisture absorption treatment of semiconductor devices sealed by these conventional methods,
For example, if solder immersion is performed after 72 hours of 85° C./85% RH treatment, blisters or cracks will occur on the back side of the package die pad. That is, a sealing resin that completely prevents cracking during soldering has not been obtained, and it is desired to develop a sealing resin that has better soldering heat resistance.
そこで、本発明者らは、これらの問題点を解決すへく鋭
意研究を行った結果、多官能エポキシ樹脂の一部又は全
部として特定の構造を有するものを使用することにより
、かかる問題点を解決できることを見出し、本発明を完
成するに到った。Therefore, the present inventors conducted intensive research to solve these problems, and found that by using a polyfunctional epoxy resin having a specific structure as part or all of the polyfunctional epoxy resin, these problems could be solved. We have found a solution to this problem and have completed the present invention.
従って、本発明の目的は、この様な従来の問題点を解消
し、低吸水率でハンダ耐熱性に優れ、低応力化された半
導体封止用樹脂組成物を提供することにある。Therefore, an object of the present invention is to solve such conventional problems and provide a resin composition for semiconductor encapsulation that has a low water absorption rate, excellent solder heat resistance, and low stress.
すなわち、本発明は、多官能エポキン化合物、無機フィ
ラー、硬化剤及び硬化促進剤を含有する樹脂組成物であ
って、多官能エポキシ化合物の一部又は全部として下記
一般式（１）
で表されるエポキシ化合物を含有する半導体封止用樹脂
組成物である。That is, the present invention is a resin composition containing a polyfunctional epoxy compound, an inorganic filler, a curing agent, and a curing accelerator, which is represented by the following general formula (1) as part or all of the polyfunctional epoxy compound. This is a resin composition for semiconductor encapsulation containing an epoxy compound.
上記一般式（１）で表される多官能エポキシ樹脂は、ビ
スフェノールフルオレンとビフェノール型エポキシ化合
物とを反応させることにより製造でき、分子中に剛直で
嵩高いフルオレン骨格を有し、これを使用することで低
吸水性で耐ハンダ性に優れ、低応力化された硬化物とす
ることができる。The polyfunctional epoxy resin represented by the above general formula (1) can be produced by reacting bisphenol fluorene and a biphenol type epoxy compound, and has a rigid and bulky fluorene skeleton in the molecule. It can be made into a cured product with low water absorption, excellent solder resistance, and low stress.
本発明の多官能エポキシ樹脂を配合することによる効果
を最大限に引き出すためには、本発明による多官能エポ
キシ樹脂をエポキシ樹脂の全部として使用することか好
ましいが、他の多官能エポキシ樹脂と混合使用してもよ
い。この場合、エポキシ樹脂の全量１００重量部に対し
て本発明の多官能エポキシ樹脂を３０重量部以上配合す
ることが望ましい。３０重量部より少ないと、所望の効
果が得られない。In order to maximize the effect of blending the polyfunctional epoxy resin of the present invention, it is preferable to use the polyfunctional epoxy resin of the present invention as the entire epoxy resin, but it is preferable to mix it with other polyfunctional epoxy resins. May be used. In this case, it is desirable to mix 30 parts by weight or more of the polyfunctional epoxy resin of the present invention with respect to 100 parts by weight of the total amount of epoxy resin. If the amount is less than 30 parts by weight, the desired effect cannot be obtained.
本発明の多官能エポキシ樹脂と併用できる他の多官能エ
ポキシ樹脂としては、例えばヒスフェノール型エポキシ
樹脂、タレゾールノボラック型エポキシ樹脂、フェノー
ルノボラック型エポキシ樹脂等を挙げることかできる。Examples of other polyfunctional epoxy resins that can be used in combination with the polyfunctional epoxy resin of the present invention include hisphenol type epoxy resins, talesol novolac type epoxy resins, and phenol novolac type epoxy resins.
本発明において用いられる硬化剤としては、主としてフ
ェノールノボラック等の多価フェノール類があるが、酸
無水物系硬化剤、アミン系硬化剤等であってもよい。こ
の場合、硬化剤の全量としてはエポキシ樹脂１００重量
部に対して１５〜６０重量部の範囲であることが好まし
い。The curing agent used in the present invention mainly includes polyhydric phenols such as phenol novolak, but acid anhydride curing agents, amine curing agents, etc. may also be used. In this case, the total amount of the curing agent is preferably in the range of 15 to 60 parts by weight per 100 parts by weight of the epoxy resin.
本発明においては、前記エポキシ樹脂の硬化剤の他に硬
化促進剤を必須の成分として配合する。In the present invention, a curing accelerator is added as an essential component in addition to the curing agent for the epoxy resin.
硬化促進剤としては公知のものが使用できるが、好適な
硬化促進剤として、例えばトリフェニルフォスフイン、
イミダゾール等がある。Known curing accelerators can be used, and suitable curing accelerators include, for example, triphenylphosphine,
Examples include imidazole.
また、本発明の半導体封止用樹脂組成物には、必要によ
り溶融シリカ粉末、アルミナ粉末、タルク等の無機フィ
ラー、ＯＰワックス、カルバナワックス等の離型剤、γ
−クリシトキシプロピルトリメトキシンラン等のカップ
リング剤、カーボンブラック等の着色剤、三酸化アンチ
モン等の難燃剤を添加することもてきる。The resin composition for semiconductor encapsulation of the present invention may also contain, if necessary, an inorganic filler such as fused silica powder, alumina powder, and talc, a mold release agent such as OP wax, and carbana wax, and γ
- Coupling agents such as chrysitoxypropyltrimethoxine, coloring agents such as carbon black, and flame retardants such as antimony trioxide may also be added.
本発明の半導体封止用樹脂組成物は、従来公知の方法に
従って、混合し、混練され、粉砕された後、加熱成形す
ることによって、容易に半導体素子を封入した半導体装
置とすることができる。The resin composition for semiconductor encapsulation of the present invention can be easily made into a semiconductor device encapsulating a semiconductor element by mixing, kneading, and pulverizing the resin composition according to a conventionally known method, followed by thermoforming.
以下、実施例に基づいて、本発明を更に詳しく説明する
。Hereinafter, the present invention will be explained in more detail based on Examples.
実施例１
４．４゛−ジヒドロキシ−３，３°、 ５．５’−テト
ラメチルビフェニルジグリシジルエーテル２４０ｇと９
．９°−ビス（４−ヒドロキシフェニル）フルオレン５
６ｇとを１５０℃で溶融混合し、更にトリフェニルホス
フィン１ｇを加え、１５０℃で３時間反応させてエポキ
シ樹脂Ａ（軟化点８２℃、エポキシ当量３１７）を得た
。Example 1 240 g of 4.4′-dihydroxy-3,3°, 5.5′-tetramethylbiphenyl diglycidyl ether and 9
．． 9°-bis(4-hydroxyphenyl)fluorene 5
6 g was melt-mixed at 150°C, 1 g of triphenylphosphine was added, and the mixture was reacted at 150°C for 3 hours to obtain epoxy resin A (softening point: 82°C, epoxy equivalent: 317).
この様にして得られたエポキシ樹脂Ａ、ｏ−クレゾール
ノボラック型エポキシ樹脂（軟化点７０°Ｃ）、フェノ
ールノボラック樹脂（軟化点１００℃）、溶融シリカ粉
末、硬化促進剤及びその他の添加剤を第１表に示す割合
で混合した後、ミキンングロールを用い１１０℃で４分
間混練し、冷却後粉砕して封止用樹脂組成物を調製した
。Epoxy resin A obtained in this way, o-cresol novolac type epoxy resin (softening point 70°C), phenol novolac resin (softening point 100°C), fused silica powder, hardening accelerator and other additives were added. After mixing in the proportions shown in Table 1, they were kneaded for 4 minutes at 110° C. using a mixing roll, cooled, and then crushed to prepare a sealing resin composition.
これらの封止用樹脂組成物を用いてテストピースを成形
し、さらに１７５℃で１２時間ポストキュアした後、曲
げ強度、吸水率を測定した。また、同じ封止用樹脂組成
物を用いて６４ｐｉｎ Ｉ Ｃを成形し、ポストキュア
した後、８５℃、８５％の恒温恒湿機中で吸湿を２４時
間又は４８時間行った後、２６０℃のハンダ浴に１０秒
間浸漬し、パッケージのクラック発生状況を観察した。Test pieces were molded using these sealing resin compositions, and after post-curing at 175° C. for 12 hours, bending strength and water absorption were measured. In addition, after molding a 64-pin IC using the same sealing resin composition and post-curing, moisture absorption was performed for 24 hours or 48 hours in a constant temperature and humidity chamber at 85°C and 85%, and then at 260°C. The package was immersed in a solder bath for 10 seconds, and the occurrence of cracks in the package was observed.
これらの結果を第１表に示す。These results are shown in Table 1.
第１表に示した結果より、本発明の半導体装置用樹脂組
成物は、強度、ハンダ耐熱性に優れ、また、ガラス転移
点か高く、耐熱性に優れていることが判明した。From the results shown in Table 1, it was found that the resin composition for semiconductor devices of the present invention has excellent strength and solder heat resistance, and also has a high glass transition point and excellent heat resistance.
比較例１
エポキシ樹脂として０−クレゾールノボラック型エポキ
シ樹脂のみを使用し、第１表に示す割合で混合し、実施
例１と同様にして各特性を測定した。Comparative Example 1 Only an 0-cresol novolac type epoxy resin was used as the epoxy resin, mixed in the proportions shown in Table 1, and each characteristic was measured in the same manner as in Example 1.
結果を第１表に示す。The results are shown in Table 1.
第 １ 表
（注）本１：８５°Ｃ１８５％ 、 １００時間後に測
定〔発明の効果）
本発明の半導体封止用樹脂組成物によれば、曲げ強度や
ハンダ耐熱性か向上し、また、カラス転移点が高くなり
、耐熱性に優れた硬化物を得ることかできる。このため
、これを使用することにより、クラックの発生しない良
好な半導体装置を得ることができる。Table 1 (Note) Book 1: Measured after 100 hours at 85°C 185% [Effects of the invention] According to the resin composition for semiconductor encapsulation of the present invention, bending strength and solder heat resistance are improved, and glass It is possible to obtain a cured product with a high transition point and excellent heat resistance. Therefore, by using this, a good semiconductor device without cracks can be obtained.
特許出願人 新日鐵化学株式会社Patent applicant: Nippon Steel Chemical Co., Ltd.
Claims (2)
び硬化促進剤を含有する樹脂組成物であって、多官能エ
ポキシ化合物の一部又は全部として下記一般式（１） ▲数式、化学式、表等があります▼（１） で表されるエポキシ化合物を含有することを特徴とする
半導体封止用樹脂組成物。(1) A resin composition containing a polyfunctional epoxy compound, an inorganic filler, a curing agent, and a curing accelerator, in which part or all of the polyfunctional epoxy compound has the following general formula (1) ▲ Numerical formula, chemical formula, table, etc. ▼(1) A resin composition for semiconductor encapsulation characterized by containing an epoxy compound represented by the following.
たとき、一般式（１）で表されるエポキシ樹脂を少なく
とも３０重量部含有する請求項１記載の半導体封止用樹
脂組成物。（３）多官能エポキシ化合物、無機フィラー
、硬化剤及び硬化促進剤を含有する樹脂組成物であって
、多官能エポキシ化合物の一部又は全部として下記一般
式（１） ▲数式、化学式、表等があります▼（１） で表されるエポキシ化合物を含有する樹脂組成物を用い
て封止したことを特徴とする半導体装置。(2) The resin composition for semiconductor encapsulation according to claim 1, which contains at least 30 parts by weight of the epoxy resin represented by the general formula (1) when the total amount of the polyfunctional epoxy compound is 100 parts by weight. (3) A resin composition containing a polyfunctional epoxy compound, an inorganic filler, a curing agent, and a curing accelerator, wherein part or all of the polyfunctional epoxy compound has the following general formula (1) ▲ Numerical formula, chemical formula, table, etc. ▼(1) A semiconductor device characterized by being sealed using a resin composition containing an epoxy compound represented by the following.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7555990A JPH0472321A (en) | 1990-03-27 | 1990-03-27 | Resin composition for sealing semiconductor and semiconductor device produced by using the same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7555990A JPH0472321A (en) | 1990-03-27 | 1990-03-27 | Resin composition for sealing semiconductor and semiconductor device produced by using the same |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0472321A true JPH0472321A (en) | 1992-03-06 |
Family
ID=13579660
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP7555990A Pending JPH0472321A (en) | 1990-03-27 | 1990-03-27 | Resin composition for sealing semiconductor and semiconductor device produced by using the same |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0472321A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5044880B2 (en) * | 2000-02-09 | 2012-10-10 | 日立化成工業株式会社 | Resin composition, adhesive for connecting circuit members using the same, and circuit board |
| JP2012524828A (en) * | 2009-04-24 | 2012-10-18 | コリア インスティチュート オブ インダストリアル テクノロジー | New epoxy resin and epoxy resin composition containing the same |
| TWI619761B (en) * | 2013-02-14 | 2018-04-01 | Ajinomoto Co., Inc. | Curable resin composition |
-
1990
- 1990-03-27 JP JP7555990A patent/JPH0472321A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5044880B2 (en) * | 2000-02-09 | 2012-10-10 | 日立化成工業株式会社 | Resin composition, adhesive for connecting circuit members using the same, and circuit board |
| JP2012524828A (en) * | 2009-04-24 | 2012-10-18 | コリア インスティチュート オブ インダストリアル テクノロジー | New epoxy resin and epoxy resin composition containing the same |
| TWI619761B (en) * | 2013-02-14 | 2018-04-01 | Ajinomoto Co., Inc. | Curable resin composition |
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