JPH05217702A - Epoxy resin molding material for sealing electronic part - Google Patents

Epoxy resin molding material for sealing electronic part

Info

Publication number
JPH05217702A
JPH05217702A JP1580392A JP1580392A JPH05217702A JP H05217702 A JPH05217702 A JP H05217702A JP 1580392 A JP1580392 A JP 1580392A JP 1580392 A JP1580392 A JP 1580392A JP H05217702 A JPH05217702 A JP H05217702A
Authority
JP
Japan
Prior art keywords
resin
epoxy resin
phenol
molding material
weight
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1580392A
Other languages
Japanese (ja)
Inventor
Shinsuke Hagiwara
伸介 萩原
Seiichi Akagi
清一 赤城
Fumio Furusawa
文夫 古沢
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Showa Denko Materials Co Ltd
Original Assignee
Hitachi Chemical Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Chemical Co Ltd filed Critical Hitachi Chemical Co Ltd
Priority to JP1580392A priority Critical patent/JPH05217702A/en
Publication of JPH05217702A publication Critical patent/JPH05217702A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE:To improve resistance to reflow cracks by obtaining a composition excellent in heat resistance, moisture absorption property, etc., through use of diepoxy resin shown by the formula, phenol resin which includes a specified quantity of two-nucleus substance, and a specified quantity of inorganic filler. CONSTITUTION:The epoxy resin shown by the formula is obtained by epoxidation of 4,4'-bishydroxy 3,3',5,5'-tetramethylviphenyl. Though nothing is limited as regards the distribution of quantity of molecules of the novolak resin of phenol kind, the weight ratio of the ingredients below the two-nucleus substance is 15% or less. Moreover, as a filler, a 60volume% or more of inorganic filler is used for reduction of moisture absorption, etc. For example, 80 pts.wt. of epoxy resin shown by the figure and 50 pts.wt. of phenol novolar resin including 11.5wt.% two-nucleus substances are fused and mixed under the condition of 120 deg.C and 30min. and are cooled to get uniform solid resin. Each kind of additive and 70wt.% quartz glass powder are mixed to this resin, and a molding material is made under the condition of 80-90 deg.C in kneading temperature and 7-100min. in kneading time, using a heat roll of 10in. diameter.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明は電子部品封止用エポキシ
樹脂成形材料に関するもので、とくに、表面実装用プラ
スチックパッケージICが対象となる。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an epoxy resin molding material for encapsulating electronic parts, and is particularly applicable to surface mount plastic package ICs.

【0002】[0002]

【従来の技術】従来から、トランジスタ、ICなどの電
子部品封止の分野ではエポキシ樹脂成形材料が広く用い
られている。この理由としては、エポキシ樹脂が電気特
性、耐湿性、耐熱性、機械特性、インサート品との接着
性などの諸特性にバランスがとれているためである。と
くに、オルソクレゾ一ルノボラック型エポキシ樹脂とフ
ェノールノボラック硬化剤の組み合わせはこれらのバラ
ンスに優れており、IC封止用成形材料のべース樹脂と
して主流になっている。
2. Description of the Related Art Conventionally, epoxy resin molding materials have been widely used in the field of encapsulating electronic parts such as transistors and ICs. The reason for this is that the epoxy resin is well balanced in various characteristics such as electric characteristics, moisture resistance, heat resistance, mechanical characteristics, and adhesiveness with insert products. In particular, a combination of an orthocresol novolac type epoxy resin and a phenol novolac curing agent has an excellent balance of these, and has become the mainstream as a base resin for a molding material for IC encapsulation.

【0003】[0003]

【発明が解決しようとする課題】近年、電子部品のプリ
ント配線板ヘの高密度実装化が進んでいる。これに伴い
電子部品は従来のピン挿入型のパッケ一ジから、表面実
装型のパッケージが主流になっている。ICとLSIな
どの表面実装型ICは実装密度を高くし、実装高さを低
くするために薄型、小型のパッケ一ジになっており、素
子のパッケージに対する占有体積が大きくなり、パッケ
一ジの肉厚は非常に薄くなってきた。さらに、これらの
パッケ一ジは従来のピン挿入型のものと実装方法が異な
っている。即ち、ピン挿入型パッケージはピンを配線板
に挿入した後、配線板裏面からはんだ付けを行うためパ
ッケージが直接高温にさらされることがなかった。しか
し、表面実装型ICは配線板表面に仮止めを行い、はん
だバスやリフロー装置などで処理されるため、直接はん
だ付け温度にさらされる。この結果、ICパッケージが
吸湿した場合、はんだ付け時に吸湿水分が急激に膨張
し、パッケージをクラックさせてしまう現在、この現象
が表面実装型ICに係わる大きな問題となっている。現
行のべース樹脂組成で封止したICパッケージでは、上
記の問題が避けられないためICを防湿梱包して出荷し
たり、配線板へ実装する前に予めICを十分乾燥して使
用するなどの方法がとられている。しかし、これらの方
法は手間がかかりコストも高くなる。本発明はかかる状
況に鑑みなされたもので配線板ヘの実装の際、特定の前
処理をすることなく、はんだ付けを行うことができる電
子部品封止用エポキシ樹脂成形材料を提供しようとする
ものである。
In recent years, high density mounting of electronic parts on a printed wiring board has been advanced. Along with this, surface mount packages are becoming the mainstream for electronic components, instead of conventional pin insertion packages. Surface-mount type ICs such as ICs and LSIs have a thin and small package in order to increase the mounting density and reduce the mounting height, and the volume occupied by the device in the package is large, so that the package The wall thickness has become very thin. Further, these packages are different in mounting method from the conventional pin insertion type. That is, in the pin insertion type package, after the pins are inserted into the wiring board, soldering is performed from the back surface of the wiring board, so that the package is not directly exposed to high temperature. However, the surface-mount type IC is directly exposed to the soldering temperature because it is temporarily fixed to the surface of the wiring board and processed by a solder bath or a reflow device. As a result, when the IC package absorbs moisture, the absorbed moisture abruptly expands during soldering, which causes the package to crack. This phenomenon is a major problem in surface mount ICs. With the current IC package sealed with a base resin composition, the above problems are unavoidable, so the IC is shipped in a moisture-proof package before shipping, or the IC is sufficiently dried before it is mounted on a wiring board. The method of is taken. However, these methods are laborious and costly. The present invention has been made in view of the above circumstances, and an object of the present invention is to provide an epoxy resin molding material for electronic component encapsulation, which can be soldered without specific pretreatment when mounted on a wiring board. Is.

【0004】[0004]

【課題を解決するための手段】発明者らは上記の課題を
解決するために鋭意検討を重ねた結果、ベース樹脂とし
てビフェニル骨格を有する特定のエポキシ樹脂を配合す
ることにより上記の目的を達成しうることを見いだし、
本発明を完成するに至った。すなわち、本発明の電子部
品封止用エポキシ樹脂成形材料は主成分として (A)構造式が
Means for Solving the Problems As a result of intensive studies to solve the above problems, the inventors achieved the above object by blending a specific epoxy resin having a biphenyl skeleton as a base resin. Found out
The present invention has been completed. That is, the epoxy resin molding material for electronic component encapsulation of the present invention has (A) structural formula as a main component

【化2】 で示されるエポキシ樹脂及び (B)2核体以下の成分が15重量%以下のフェノール
類のノポラック樹脂及び (C)60体積%以上の無機充墳剤からなることを特長
とする。
[Chemical 2] It is characterized in that the epoxy resin and the component (B) binuclear or less are composed of 15% by weight or less of a phenolic nopolak resin and (C) 60% by volume or more of an inorganic filler.

【0005】本発明における(A)のエポキシ樹脂はビ
フェニル骨格を有するものでありエポキシ樹脂の純度、
特に加水分解性塩素量はICなど素子上のアルミ配線腐
食に係わるため少ない方がよく、耐湿性の優れた電子部
品封止用エポキシ樹脂成形材料を得るためには500p
pm以下であることが好ましいが、特に限定するもので
はない。ここで、加水分解性塩素量とは試料のエポキシ
樹脂1gをジオキサン30mlに溶解し、1N−KOH
メタノール溶液5ロmlを添加して30分間リフラック
ス後、電位差滴定により求めた値を尺度としたものであ
る。(A)のエポキシ樹脂は、4,4’−ビスヒドロキ
シ3,3’,5,5’,−テトラメチルビフェニルをエ
ピクロルヒドリンを用いてエポキシ化することで得るこ
とができる。本発明においてもちいられるエポキシ樹脂
としては上記(A)の構造式で示されるものの他に、電
子部品封止用エポキシ樹脂成形材料で一般に使用されて
いるものと組合せて使用してもよい。それを例示すれば
フェノールノボラック型エポキシ樹脂、オルソクレゾー
ルノボラック型エポキシ樹脂をはじめとするフェノール
類とアルデヒド類のノボラック樹脂をエポキシ化したも
の、グリシジルアミン型エポキシ樹脂、及び脂環族エポ
キシ樹脂などがありこれらを適宜何種類でも併用するこ
とができる。
The epoxy resin (A) in the present invention has a biphenyl skeleton, and the purity of the epoxy resin is
In particular, the amount of hydrolyzable chlorine should be as small as possible because it is related to the corrosion of aluminum wiring on elements such as ICs. To obtain an epoxy resin molding material for encapsulating electronic parts with excellent moisture resistance, 500 p
It is preferably pm or less, but is not particularly limited. Here, the amount of hydrolyzable chlorine means that 1 g of epoxy resin as a sample is dissolved in 30 ml of dioxane to prepare 1N-KOH.
A value obtained by potentiometric titration after adding 5 ml of a methanol solution and refluxing for 30 minutes was used as a scale. The epoxy resin (A) can be obtained by epoxidizing 4,4′-bishydroxy 3,3 ′, 5,5 ′,-tetramethylbiphenyl using epichlorohydrin. As the epoxy resin used in the present invention, in addition to the epoxy resin represented by the structural formula (A) above, it may be used in combination with a resin generally used in epoxy resin molding materials for sealing electronic parts. Examples thereof include phenol novolac type epoxy resins, orthocresol novolac type epoxy resins and epoxidized novolac resins of phenols and aldehydes, glycidyl amine type epoxy resins, and alicyclic epoxy resins. Any number of these may be used in combination.

【0006】これらのエポキシ樹脂を併用する場合特に
限定するものではないが本発明の(A)エポキシ樹脂の
配合比は、エポキシ樹脂全体の30重量%以上が好まし
く、さらには50重量%以上が好ましい。この理由とし
ては、30重量%未満では本発明の目的である耐リフロ
一性に対して効果が少なく、特に有効な効果を発揮する
ためには50重量%以上が必要となるためである。さら
に、本発明の(B)のフェノール類のノボラック樹脂と
しては、フェノール、クレゾール、ナフトール等とアル
デヒド類の縮合及び/または共縮合により得られる樹脂
などがある。(B)のフェノール類のノボラック樹脂の
分子量分布については特に限定するものではないが、2
核体以下の成分の重量比は15重量%以下が好ましく、
さらは10重量%以下が好ましい。この理由としては、
2核体以下の成分が15重量%を越えるとガラス転移温
度及び高温強度の低下を来すためである。一般的に半導
体封止用成形材料のガラス転移温度はICの保証温度で
ある150℃以上が要求されており、重要な指標となっ
ている。また、高温強度は耐リフロークラック性に関わ
る物性値であり高いほどクラック性は向上する。
When these epoxy resins are used in combination, the compounding ratio of the epoxy resin (A) of the present invention is preferably 30% by weight or more, more preferably 50% by weight or more, though not particularly limited. .. The reason for this is that if it is less than 30% by weight, the effect on the reflow resistance which is the object of the present invention is small, and 50% by weight or more is necessary for exhibiting a particularly effective effect. Further, examples of the phenol novolak resin (B) of the present invention include resins obtained by condensation and / or cocondensation of aldehydes with phenol, cresol, naphthol and the like. There are no particular restrictions on the molecular weight distribution of the phenolic novolak resin of (B),
The weight ratio of the components below the nucleolus is preferably 15% by weight or less,
Furthermore, 10% by weight or less is preferable. The reason for this is
This is because the glass transition temperature and the high temperature strength decrease when the content of the dinuclear or lower component exceeds 15% by weight. Generally, the glass transition temperature of the molding compound for semiconductor encapsulation is required to be 150 ° C. or higher, which is the guaranteed temperature of the IC, which is an important index. Further, high temperature strength is a physical property value relating to reflow crack resistance, and the higher the strength, the higher the crack resistance.

【0007】また、(A)のエポキシ樹脂は溶融粘度が
非常に低く、一般的に(B)の化合物と粘度が大きく違
うため、混練装置の中で均一な成形材料が得にくい。そ
こで、(A)のエポキシ樹脂と(B)のフェノ一ル樹脂
をあらかじめ加熱混合した後、硬化促進剤、充項剤など
を添如し、混練を行うことで製造することが好ましい。
加熱混合の条件としては、(A)のエポキシ樹脂の溶融
する110℃以上で、エポキシ基とフェノール基の反応
が比較的穏やかな140ど以下が好ましく加熱混合の時
間は(A)(B)の両樹脂が均一に相溶する必要最小限
が好ましい。本発明に用いられるエポキシ樹脂と(B)
のフェノ一ル樹脂の当量比は硬化性、耐熱性等の点か
ら、0.8〜1.3の範囲が望ましい。
Further, since the epoxy resin (A) has a very low melt viscosity and generally has a great difference in viscosity from the compound (B), it is difficult to obtain a uniform molding material in the kneading device. Therefore, it is preferable that the epoxy resin of (A) and the phenol resin of (B) are heated and mixed in advance, and then a curing accelerator, a filler, and the like are added and kneading is performed.
The heating and mixing conditions are preferably 110 ° C. or higher at which the epoxy resin (A) melts, and 140 or less at which the reaction between the epoxy group and the phenol group is relatively mild, and the heating and mixing time is (A) and (B). The minimum necessary amount that both resins are uniformly compatible is preferable. Epoxy resin used in the present invention and (B)
The equivalent ratio of the phenol resin is preferably 0.8 to 1.3 from the viewpoint of curability, heat resistance and the like.

【0008】またエポキシ樹脂とフェノール樹脂の硬化
反応を促進する硬化促進剤を使用することができる。こ
の硬化促進剤としては例えば1,8−ジアザビシクロ
(5,4,0)ウンデセン−7,トリエチレンジアミ
ン、べンジルジメチルアミン、トリエタノールアミン、
ジメチルアミノエタノール、トリス(ジメチルアミノメ
チル)フェノールなどの三級アミシ類、2−メチルイミ
ダゾール、2−フェニルイミダゾ一ル、2−フェニル−
4−メチルイミダゾール、2−へプタデシルイミダゾ一
ルなどのイミダゾ一ル類、トリブチルホスフィン、メチ
ルジフェニルホスフィン、トリフェニルホスフィン、ジ
フェニルホスフィン、フェニルホスフィンなどの有機ホ
スフィン類、テトラフェニルホスホニウム・テトラフェ
ニルボレ一ト、テトラフェニルホスホニウム・エチルト
リフェニルボレート、テトラブチルホスホニウム・テト
ラブチルボレ一トなどのテトラ置換ホスホニウム・テト
ラ置換ボレ一、2−エチル−4−メチルイミダゾ一ル・
テトラフェニルボレート、N−メチルモルホリン・テト
ラフェニルボレートなどのテトラフェニルボロン塩など
がある。
Further, a curing accelerator which accelerates the curing reaction between the epoxy resin and the phenol resin can be used. Examples of the curing accelerator include 1,8-diazabicyclo (5,4,0) undecene-7, triethylenediamine, benzyldimethylamine, triethanolamine,
Tertiary amides such as dimethylaminoethanol and tris (dimethylaminomethyl) phenol, 2-methylimidazole, 2-phenylimidazole, 2-phenyl-
Imidazols such as 4-methylimidazole and 2-heptadecylimidazole, organic phosphines such as tributylphosphine, methyldiphenylphosphine, triphenylphosphine, diphenylphosphine, and phenylphosphine, tetraphenylphosphonium / tetraphenylborane , Tetraphenylphosphonium / ethyltriphenylborate, tetrabutylphosphonium / tetrabutylborate, etc., tetra-substituted phosphonium / tetra-substituted borate, 2-ethyl-4-methylimidazole /
There are tetraphenylboron, tetraphenylboron salts such as N-methylmorpholine / tetraphenylborate, and the like.

【0009】また、充填剤としては吸湿性低減及び強度
向上の観点から無機充墳剤を用トいることが必要であ
る。無機充墳剤としては結晶シリカ、溶融シリカ、アル
ミナ、ジルコン、珪酸カルシウム、炭酸カルシウム、炭
化珪素、窒化珪素、窒化ホウ素、ジルコニア、ジルコ
ン、フォステライト、ステアタイト、スピネル、ムライ
ト、チタニアなどの粉体、またはこれらを球形化したビ
一ズなどが上げられ、1種類以上用いることができる。
充墳剤の配合量としては同様の理由から、60容量%以
上が必要であり、さらには、65容量%以上が好まし
い。
In addition, it is necessary to use an inorganic filler as the filler from the viewpoint of reducing hygroscopicity and improving strength. As the inorganic filler, powder of crystalline silica, fused silica, alumina, zircon, calcium silicate, calcium carbonate, silicon carbide, silicon nitride, boron nitride, zirconia, zircon, fosterite, steatite, spinel, mullite, titania, etc. , Or spheres of these, and the like can be used, and one or more types can be used.
For the same reason, the compounding amount of the filling agent is required to be 60% by volume or more, more preferably 65% by volume or more.

【0010】その他の添加剤として高級脂肪酸、高級脂
酸金属塩、エステル系ワックスなどの離型剤、カーボン
ブラックなどの着色剤、エポキシシラン、アミノシラ
ン、ウレイドシラン、ビニルシラン、アルキルシラン、
有機チタネート、アルミニウムアルコレートなどのカッ
プリング剤及び難燃剤などを用いることができる。以上
のような原材料を用いて成形材料を作製する一般的な方
法としては、所定の配合量の原材料をミキサー等によっ
て十分混合した後、ミキシングロール、押出機などによ
って混練し、冷却、粉砕することによって成形材料を得
ることができる。本発明で得られる成形材料を用いて、
電子部品を封止する方法としては、低圧トランスファー
成形法が最も一般的であるが、インジェクション成形
法、圧縮成形法によっても可能である。
Other additives include higher fatty acids, higher fatty acid metal salts, release agents such as ester waxes, colorants such as carbon black, epoxysilanes, aminosilanes, ureidosilanes, vinylsilanes, alkylsilanes,
Coupling agents such as organic titanates and aluminum alcoholates, and flame retardants can be used. As a general method for producing a molding material using the above raw materials, after sufficiently mixing a predetermined amount of raw materials with a mixer or the like, kneading with a mixing roll, an extruder, etc., cooling, and pulverizing A molding material can be obtained by Using the molding material obtained in the present invention,
The low-pressure transfer molding method is the most common method for sealing electronic components, but the injection molding method and the compression molding method are also possible.

【0011】[0011]

【作用】ICパッケージが、リフロー時に受けるダメ−
ジは、ICの保管時に吸湿した水分が、リフロ一時に急
激に膨張することが原因であり、この結果、パッケージ
のクラック及び素子や、リ一ドフレ一ムと樹脂界面の剥
離を生じる。従って、リフロ一に強い樹脂としては、吸
水率が低いこと高温で強度が高いこと、及び接着力が高
いことが要求される。本発明の主成分となるエポキシ樹
脂は骨格の剛直性、疎水性に優れたテトラメチルビフェ
ノールをベースにしたジエポキシ樹脂であり、さらに、
高温強度が高くなる、2核体の少ないフェノール樹脂を
硬化剤として用いたため耐熱性、吸湿特性、接着性に優
れた組成物を得ることができたと推察できる。この効果
により耐リフロークラック性が向上したと考えられる。
[Function] IC package cannot be received during reflow
The cause of the phenomenon is that moisture absorbed during storage of the IC rapidly expands during reflow, resulting in cracks and elements of the package, and peeling of the interface between the lead frame and the resin. Therefore, a resin that is resistant to reflow is required to have low water absorption, high strength at high temperatures, and high adhesive strength. The epoxy resin which is the main component of the present invention is a diepoxy resin based on tetramethylbiphenol having excellent skeleton rigidity and hydrophobicity,
It can be inferred that a composition having excellent heat resistance, hygroscopicity, and adhesiveness could be obtained because a phenol resin having a low binuclear content, which has high high-temperature strength, was used as a curing agent. It is considered that this effect improved the reflow crack resistance.

【0012】[0012]

【実施例】以下実施例により本発明を説明するが本発明
の範囲はこれらの実施例に限定されるものではない。 実施例1 構造式が
EXAMPLES The present invention will be described below with reference to examples, but the scope of the present invention is not limited to these examples. Example 1 The structural formula is

【化3】 であらわされるエポキシ当量190のエポキシ樹脂80
重量部と水酸基当量106、軟化点95℃、2核体が1
1.5重量%のフェノールノボラック樹脂50重量部1
20℃、30分の条件で溶融混合し、冷却後に得られた
均一な固形樹脂と臭素比率50重量%、エポキシ樹脂3
75の臭素化ビスフェノ一ルA型エポキシ樹脂20重量
部、トリフェニルホスフィン(2.5重量部)、カルナ
バワックス(3重量部)、カーボンブラック(1重量
部)、γ−グリシドキシプロピルトリメトキシシラン
(4重量部)、石英ガラス粉(75重量%)を配合し、
10インチ径の加熱ロールを使用して、混練温度80〜
90℃、混練時間7〜10分の条件で実施例1のエポキ
シ樹脂成形材料を作製した。
[Chemical 3] Epoxy resin 80 having an epoxy equivalent of 190
Weight part and hydroxyl group equivalent 106, softening point 95 ° C, dinuclear body 1
50 parts by weight of 1.5% by weight phenol novolac resin 1
A uniform solid resin obtained by melt-mixing under the conditions of 20 ° C. and 30 minutes and cooled, and a bromine ratio of 50% by weight, an epoxy resin 3
20 parts by weight of 75 brominated bisphenol A type epoxy resin, triphenylphosphine (2.5 parts by weight), carnauba wax (3 parts by weight), carbon black (1 part by weight), γ-glycidoxypropyltrimethoxy Silane (4 parts by weight), quartz glass powder (75% by weight) are mixed,
Using a 10-inch diameter heating roll, kneading temperature 80 ~
The epoxy resin molding material of Example 1 was produced under the conditions of 90 ° C. and kneading time of 7 to 10 minutes.

【0013】実施例2 実施例1のフェノールノポラック樹脂を水酸基当量10
6、軟化点110℃、2核体が6.2重量%のフェノー
ルノボラック樹脂に置き換えた以外は実施例1と同様に
作製した。
Example 2 The phenol nopolak resin of Example 1 was prepared by adding 10 equivalents of hydroxyl groups.
6, the softening point was 110 ° C., and the preparation was performed in the same manner as in Example 1 except that the phenol novolac resin in which the dinuclear body was 6.2 wt% was replaced.

【0014】実施例3 実施例1のフェノールノポラック樹脂を構造式がExample 3 The phenol nopolak resin of Example 1 has the structural formula

【化4】 で示される、水酸基当量140、軟化点115℃、m/
n=2/1、n+mが2以下の成分が2.6重量%の樹
脂66重量部に置き換えた以外は実施例1と同様に作製
した。
[Chemical 4] Hydroxyl group equivalent 140, softening point 115 ° C, m /
It was produced in the same manner as in Example 1 except that 66 parts by weight of a resin containing 2.6% by weight of a component in which n = 2/1 and n + m was 2 or less was replaced.

【0015】比較例1 実施例1のフェノールノボラック樹脂を水酸基当量10
6、軟化点82℃、2核体成分が22.0重量%のフェ
ノールノボラック樹脂に置き換えた以外は実施例1と同
様に作製した。
Comparative Example 1 The phenol novolac resin of Example 1 was prepared by adding 10 equivalents of hydroxyl groups.
6, the softening point was 82 ° C., and the same procedure as in Example 1 was carried out except that the phenol novolac resin having the dinuclear component of 22.0% by weight was replaced.

【0016】比較例2 比較例1のビフェニル骨格のジエポキシ樹脂をエポキシ
当量200、軟化点73℃のオルソクレゾールノボラッ
ク型エポキシ樹脂80重量部に置き換えた以外は比較例
1と同様に作製した。
Comparative Example 2 Comparative Example 2 was prepared in the same manner as Comparative Example 1 except that the biphenyl skeleton diepoxy resin of Comparative Example 1 was replaced with 80 parts by weight of an orthocresol novolac type epoxy resin having an epoxy equivalent of 200 and a softening point of 73 ° C.

【0017】実施例1〜3及び比較例1〜2の特性は表
1に、試験法の詳細を表2に示す。実施例は比較例1と
比べ、2核体の比率が少ないため吸水率、接着強度は変
わらずにガラス転移温度が高くなった。また実施例は比
較例2と比べ、吸水率が小さく、接着強度に優れること
がわかる。
The characteristics of Examples 1 to 3 and Comparative Examples 1 and 2 are shown in Table 1, and details of the test method are shown in Table 2. Compared with Comparative Example 1, the ratio of the binuclear body was smaller in Example, so that the water absorption rate and the adhesive strength were not changed and the glass transition temperature was increased. Further, it can be seen that the example has a smaller water absorption rate and excellent adhesive strength as compared with the comparative example 2.

【0018】[0018]

【表1】 [Table 1]

【0019】本発明の効果を明確にするために、評価用
ICを用いたリフロー時の耐クラック性及びリフロ一後
の耐湿性の結果を示す。耐クラック性評価に用いたIC
は外形が19×14×2.0mmのフラットパッケージ
であり、8×10×0.4(mm)の素子を搭載した8
0ピン、42アロイリードのものである。試験条件は8
5℃、85%RHで所定時間加湿した後、215℃のベ
ーパーフェーズリフロ一炉で90抄加熱するものであ
る。評価は外観を顕微鏡観察し、パッケージクラックの
有無を判定することにより行った。なお、ICパッケー
ジの成形は180℃、90秒、70kfg/cm2 の条
件で行い成形後180℃、5時間の後硬化を行った。
In order to clarify the effect of the present invention, the results of crack resistance during reflow using the evaluation IC and moisture resistance after reflow are shown. IC used for crack resistance evaluation
Is a flat package with an outer shape of 19 × 14 × 2.0 mm, and 8 × 10 × 0.4 (mm) elements are mounted on it.
It is a 0 pin, 42 alloy lead. The test condition is 8
After humidifying at 5 ° C. and 85% RH for a predetermined time, 90 papermaking heating is performed in a vapor phase reflow oven at 215 ° C. The evaluation was performed by observing the appearance with a microscope and determining the presence or absence of package cracks. The IC package was molded under the conditions of 180 ° C. for 90 seconds and 70 kfg / cm 2 and then post-cured at 180 ° C. for 5 hours after molding.

【0020】[0020]

【表2】 表3にリフロ一時の耐クラック試験の結果を示す。表3
から実施例1〜3に示すように比較例1と比較して、T
gが高いにも関わらず良好なリフロー性を示した。ま
た、代表的な従来樹脂系の比較例2と比べると、リフロ
ー時の耐クラック性を大幅に改善できる。
[Table 2] Table 3 shows the result of the crack resistance test during temporary reflow. Table 3
Compared to Comparative Example 1 as shown in Examples 1 to 3,
Good reflowability was exhibited despite the high g. Further, crack resistance during reflow can be significantly improved as compared with a typical conventional resin-based comparative example 2.

【0021】[0021]

【表3】 [Table 3]

【0022】[0022]

【発明の効果】本発明によって得られたエポキシ樹脂成
形材料はリフロー時の耐クラック性及びリフロ一後の耐
湿性が従来のものと比べ大きく改善できる。電子部品の
分野、とくにFP(フラットパッケージ)、SOP(ス
モールアウトラインパッケージ)などのICではパッケ
一ジが薄形、小形になり、素子の大形化と相侯って耐パ
ッケージクラック性が強く要求されており、これらの製
品へ広く適用でき、その工業的価値は大きい。
The epoxy resin molding material obtained according to the present invention can greatly improve the crack resistance during reflow and the humidity resistance after reflow compared with the conventional ones. In the field of electronic components, especially in ICs such as FP (flat package) and SOP (small outline package), the package is thin and small, and in combination with the large size of the device, package crack resistance is strongly required. It has been widely applied to these products, and its industrial value is great.

───────────────────────────────────────────────────── フロントページの続き (51)Int.Cl.5 識別記号 庁内整理番号 FI 技術表示箇所 C08J 5/00 CFC 9267−4F C08K 3/00 NKT 7167−4J H01L 23/29 23/31 // C08L 63:00 ─────────────────────────────────────────────────── ─── Continuation of the front page (51) Int.Cl. 5 Identification code Internal reference number FI Technical display location C08J 5/00 CFC 9267-4F C08K 3/00 NKT 7167-4J H01L 23/29 23/31 // C08L 63:00

Claims (2)

【特許請求の範囲】[Claims] 【請求項1】 主たる成分として (A)構造式が 【化1】 で示されるエポキシ樹脂及び (B)2核体以下の成分が15重量%以下のフェノール
類のノボラック樹脂及び (C)60体積%以上の無機充墳剤 を含有することを特徴とする電子部品封止用エポキシ樹
脂成形材料。
1. A structural formula of (A) as a main component is And an epoxy resin (B) containing no more than 15% by weight of a phenolic novolac resin and (C) 60% by volume or more of an inorganic filler. Epoxy resin molding compound for stop.
【請求項2】 (A)のエポキシ樹脂と(B)のノボラ
ック樹脂をあらかじめ加熱混合した後、硬化促進剤、充
墳剤などを添加し混練を行うことで製造することを特徴
とする請求項1に記載の電子部品封止用エポキシ樹脂成
形材料。
2. The epoxy resin of (A) and the novolak resin of (B) are heated and mixed in advance, and then a curing accelerator, a filler and the like are added and kneading is performed to produce the resin. 1. An epoxy resin molding material for electronic component encapsulation according to 1.
JP1580392A 1992-01-31 1992-01-31 Epoxy resin molding material for sealing electronic part Pending JPH05217702A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1580392A JPH05217702A (en) 1992-01-31 1992-01-31 Epoxy resin molding material for sealing electronic part

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1580392A JPH05217702A (en) 1992-01-31 1992-01-31 Epoxy resin molding material for sealing electronic part

Publications (1)

Publication Number Publication Date
JPH05217702A true JPH05217702A (en) 1993-08-27

Family

ID=11899000

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1580392A Pending JPH05217702A (en) 1992-01-31 1992-01-31 Epoxy resin molding material for sealing electronic part

Country Status (1)

Country Link
JP (1) JPH05217702A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09165566A (en) * 1995-12-14 1997-06-24 Sumitomo Bakelite Co Ltd Die bonding material
US6156865A (en) * 1998-11-19 2000-12-05 Nec Corporation Flame retardant thermosetting resin composition
JP2008166739A (en) * 2006-11-28 2008-07-17 Semiconductor Energy Lab Co Ltd Storage device and semiconductor device
JP2009242772A (en) * 2008-03-12 2009-10-22 Hitachi Chem Co Ltd Method for producing thermosetting resin composition, substrate for mounting optical semiconductor element mounting substrate, method for producing the substrate, and optical semiconductor device

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09165566A (en) * 1995-12-14 1997-06-24 Sumitomo Bakelite Co Ltd Die bonding material
US6156865A (en) * 1998-11-19 2000-12-05 Nec Corporation Flame retardant thermosetting resin composition
JP2008166739A (en) * 2006-11-28 2008-07-17 Semiconductor Energy Lab Co Ltd Storage device and semiconductor device
JP2009242772A (en) * 2008-03-12 2009-10-22 Hitachi Chem Co Ltd Method for producing thermosetting resin composition, substrate for mounting optical semiconductor element mounting substrate, method for producing the substrate, and optical semiconductor device

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