JPH0232115A - Epoxy resin composition for sealing semiconductor - Google Patents
Epoxy resin composition for sealing semiconductorInfo
- Publication number
- JPH0232115A JPH0232115A JP18175088A JP18175088A JPH0232115A JP H0232115 A JPH0232115 A JP H0232115A JP 18175088 A JP18175088 A JP 18175088A JP 18175088 A JP18175088 A JP 18175088A JP H0232115 A JPH0232115 A JP H0232115A
- Authority
- JP
- Japan
- Prior art keywords
- epoxy resin
- filler
- solder
- resin composition
- silica powder
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000003822 epoxy resin Substances 0.000 title claims abstract description 35
- 229920000647 polyepoxide Polymers 0.000 title claims abstract description 35
- 239000000203 mixture Substances 0.000 title claims abstract description 18
- 239000004065 semiconductor Substances 0.000 title claims description 6
- 238000007789 sealing Methods 0.000 title description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 24
- 239000000843 powder Substances 0.000 claims abstract description 13
- 239000000945 filler Substances 0.000 claims abstract description 11
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 11
- 125000000524 functional group Chemical group 0.000 claims abstract description 3
- KXGFMDJXCMQABM-UHFFFAOYSA-N 2-methoxy-6-methylphenol Chemical compound [CH]OC1=CC=CC([CH])=C1O KXGFMDJXCMQABM-UHFFFAOYSA-N 0.000 claims abstract 3
- 229920001568 phenolic resin Polymers 0.000 claims abstract 3
- 239000005011 phenolic resin Substances 0.000 claims abstract 3
- 125000000217 alkyl group Chemical group 0.000 claims abstract 2
- 229910052736 halogen Inorganic materials 0.000 claims abstract 2
- 150000002367 halogens Chemical class 0.000 claims abstract 2
- 239000003795 chemical substances by application Substances 0.000 claims description 3
- 238000005538 encapsulation Methods 0.000 claims description 3
- 238000005476 soldering Methods 0.000 abstract description 8
- 239000002245 particle Substances 0.000 abstract description 5
- 239000004848 polyfunctional curative Substances 0.000 abstract 2
- WADSJYLPJPTMLN-UHFFFAOYSA-N 3-(cycloundecen-1-yl)-1,2-diazacycloundec-2-ene Chemical compound C1CCCCCCCCC=C1C1=NNCCCCCCCC1 WADSJYLPJPTMLN-UHFFFAOYSA-N 0.000 abstract 1
- 229910000679 solder Inorganic materials 0.000 description 23
- 238000012360 testing method Methods 0.000 description 19
- 230000035882 stress Effects 0.000 description 13
- 239000012778 molding material Substances 0.000 description 9
- 230000007423 decrease Effects 0.000 description 6
- RIOQSEWOXXDEQQ-UHFFFAOYSA-N triphenylphosphine Chemical compound C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1 RIOQSEWOXXDEQQ-UHFFFAOYSA-N 0.000 description 6
- 238000000034 method Methods 0.000 description 5
- 239000000654 additive Substances 0.000 description 3
- 238000004132 cross linking Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 125000003700 epoxy group Chemical group 0.000 description 3
- 238000002156 mixing Methods 0.000 description 3
- 229920003986 novolac Polymers 0.000 description 3
- 229920001296 polysiloxane Polymers 0.000 description 3
- LXBGSDVWAMZHDD-UHFFFAOYSA-N 2-methyl-1h-imidazole Chemical compound CC1=NC=CN1 LXBGSDVWAMZHDD-UHFFFAOYSA-N 0.000 description 2
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- ADCOVFLJGNWWNZ-UHFFFAOYSA-N antimony trioxide Chemical compound O=[Sb]O[Sb]=O ADCOVFLJGNWWNZ-UHFFFAOYSA-N 0.000 description 2
- 239000006229 carbon black Substances 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- XXBDWLFCJWSEKW-UHFFFAOYSA-N dimethylbenzylamine Chemical compound CN(C)CC1=CC=CC=C1 XXBDWLFCJWSEKW-UHFFFAOYSA-N 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000009472 formulation Methods 0.000 description 2
- 239000005350 fused silica glass Substances 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 2
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 2
- QWVGKYWNOKOFNN-UHFFFAOYSA-N o-cresol Chemical compound CC1=CC=CC=C1O QWVGKYWNOKOFNN-UHFFFAOYSA-N 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 230000035939 shock Effects 0.000 description 2
- 239000001993 wax Substances 0.000 description 2
- -1 0.5 parts by weight Substances 0.000 description 1
- JYEUMXHLPRZUAT-UHFFFAOYSA-N 1,2,3-triazine Chemical group C1=CN=NN=C1 JYEUMXHLPRZUAT-UHFFFAOYSA-N 0.000 description 1
- 229930185605 Bisphenol Natural products 0.000 description 1
- 239000006087 Silane Coupling Agent Substances 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- IISBACLAFKSPIT-UHFFFAOYSA-N bisphenol A Chemical compound C=1C=C(O)C=CC=1C(C)(C)C1=CC=C(O)C=C1 IISBACLAFKSPIT-UHFFFAOYSA-N 0.000 description 1
- 239000004203 carnauba wax Substances 0.000 description 1
- 235000013869 carnauba wax Nutrition 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 229920001971 elastomer Polymers 0.000 description 1
- 239000003063 flame retardant Substances 0.000 description 1
- LNEPOXFFQSENCJ-UHFFFAOYSA-N haloperidol Chemical class C1CC(O)(C=2C=CC(Cl)=CC=2)CCN1CCCC(=O)C1=CC=C(F)C=C1 LNEPOXFFQSENCJ-UHFFFAOYSA-N 0.000 description 1
- 230000008642 heat stress Effects 0.000 description 1
- CAYGQBVSOZLICD-UHFFFAOYSA-N hexabromobenzene Chemical compound BrC1=C(Br)C(Br)=C(Br)C(Br)=C1Br CAYGQBVSOZLICD-UHFFFAOYSA-N 0.000 description 1
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 1
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 239000011256 inorganic filler Substances 0.000 description 1
- 229910003475 inorganic filler Inorganic materials 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 238000004898 kneading Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000006082 mold release agent Substances 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N phenol group Chemical group C1(=CC=CC=C1)O ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 1
- 238000010298 pulverizing process Methods 0.000 description 1
- 239000011342 resin composition Substances 0.000 description 1
- 239000003566 sealing material Substances 0.000 description 1
- 229920001169 thermoplastic Polymers 0.000 description 1
- 239000004416 thermosoftening plastic Substances 0.000 description 1
- 238000001721 transfer moulding Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は、耐半田ストレス性に優れた半導体封止用エポ
キシ樹脂組成物に関するものである。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to an epoxy resin composition for semiconductor encapsulation that has excellent solder stress resistance.
〔従来の技術)
半導体関連技術は近年の軽薄短小傾向より実装密度を向
上させる方向で進んできた。そのためにメモリーの集積
度の向上や、実装方法のスルーホール実装から表面実装
への移行が進んでいる。従ってパッケージは従来のDI
Pタイプから表面実装用として小型薄型のフラットパッ
ケージ、sop。[Conventional technology] Semiconductor-related technology has progressed in the direction of improving packaging density due to the recent trend toward lighter, thinner, and smaller devices. To this end, memory density is increasing and the mounting method is shifting from through-hole mounting to surface mounting. Therefore, the package is a traditional DI
SOP is a small and thin flat package for surface mounting from P type.
SOJ、PLCCに変わってきており、応力によるパッ
ケージクラックの発生、これらのクランクによる耐湿性
の低下等の問題がある。These are replaced by SOJ and PLCC, and there are problems such as package cracks due to stress and a decrease in moisture resistance due to these cranks.
特に表面実装工程でのリードの半田付は時にパッケージ
は急激な温度変化を受け、このためにパッケージにクラ
ンクが生じる問題が大きくクローズアップされている。In particular, when soldering leads in the surface mounting process, the package is sometimes subject to rapid temperature changes, and the problem of cranking of the package due to this is attracting attention.
これらの問題を解決するために半田付は時の熱衝撃を緩
和する目的で、熱可塑性オリゴマーの添加(特開昭62
−115849号公報)や各種シリコーン化合物の添加
(特開昭62−115850号公報、62−11665
4号公報、62−128162号公報)、更にはシリコ
ーン変性(特開昭62−136860号公報)などの手
法で対処しているがいずれも半田付は時にパッケージに
クランクが生じてしまい信鯨性の優れた半導体対土用エ
ポキシ樹脂組成物を得るまでには至らなかった。In order to solve these problems, soldering requires the addition of thermoplastic oligomers (Japanese Patent Laid-Open No. 62/1999) to alleviate the thermal shock caused by soldering.
-115849) and addition of various silicone compounds (JP-A-62-115850, 62-11665)
4, 62-128162) and silicone modification (Japanese Patent Application Laid-Open No. 62-136860), these methods sometimes cause cracks in the package during soldering, resulting in poor reliability. However, it has not been possible to obtain an epoxy resin composition for semiconductors with excellent properties.
−4、耐半田ストレス性に優れた耐熱性エポキシ樹脂組
成物を得る為に樹脂系としては多官能エポキシ樹脂の使
用(特開昭61−168620号公報)等が検討されて
きたが、多官能エポキシ樹脂の使用では架橋密度が上が
り耐熱性が向上するが、特に200°C〜300℃のよ
うな高温にさらされた場合においては耐半田ストレス性
が不充分であった。-4. In order to obtain a heat-resistant epoxy resin composition with excellent solder stress resistance, the use of a polyfunctional epoxy resin as the resin system (Japanese Patent Application Laid-open No. 168620/1983) has been considered; Although the use of epoxy resin increases the crosslinking density and improves heat resistance, the solder stress resistance is insufficient, especially when exposed to high temperatures such as 200°C to 300°C.
本発明はこのような問題に対して、エポキシ樹脂として
式Iで示される多官能エポキシ樹脂を、充填材として多
孔質シリカ粉末を用いることにより耐半田ストレス性が
著しく優れた半導体封止用エポキシ樹N@組成物を提供
するところにある。In order to solve these problems, the present invention has developed an epoxy resin for semiconductor encapsulation that has extremely excellent solder stress resistance by using a multifunctional epoxy resin represented by formula I as an epoxy resin and porous silica powder as a filler. N@ provides the composition.
本発明のエポキシ樹脂組成物は従来の封止用樹脂組成物
に比べて非常に優れた耐半田ストレス性を存したもので
ある。The epoxy resin composition of the present invention has extremely superior solder stress resistance compared to conventional sealing resin compositions.
(nとmは0以上の整数、n+m=1〜10であり、式
中のR+ Rz R3はそれぞれ同一又は異なり、H1
アルキル基、及びCI、Br等のハロゲンの中から選ば
れ、少なくとも1種以上の官能基をあられす)
上記式Iで表わされるエポキシ樹脂は1分子中に3個以
上のエポキシ基を有する多官能エポキシ樹脂であり、こ
の多官能エポキシ樹脂と平均粒径が5〜40μmであり
、見掛密度が0.1〜0.6g/ ccであり、かつ比
表面積が5〜20n(/gの多孔質シリカ粉末を併用す
ることにより多官能エポキシ樹脂の使用だけでは得られ
なかった耐半田ストレス性に非常に優れたエポキシ樹脂
組成物を得ることができる。(n and m are integers greater than or equal to 0, n+m=1 to 10, R+ Rz R3 in the formula are the same or different, H1
The epoxy resin represented by the above formula I is a polyfunctional resin having three or more epoxy groups in one molecule. This polyfunctional epoxy resin has an average particle size of 5 to 40 μm, an apparent density of 0.1 to 0.6 g/cc, and a specific surface area of 5 to 20 n(/g). By using silica powder in combination, it is possible to obtain an epoxy resin composition with extremely excellent solder stress resistance that could not be obtained by using only a polyfunctional epoxy resin.
このようなエポキシ樹脂の使用量は、これを調節するこ
とにより耐半田ストレス性を最大限に引き出すことがで
きる。耐半田ストレス性の効果を出す為には好ましくは
、式(1)で示される多官能エポキシ樹脂をエポキシ樹
脂の50重量%以上、更に好ましくは70重量%以上の
使用が望ましい。By adjusting the amount of such epoxy resin used, the solder stress resistance can be maximized. In order to obtain the effect of solder stress resistance, it is preferable to use the polyfunctional epoxy resin represented by formula (1) in an amount of 50% by weight or more, more preferably 70% by weight or more of the epoxy resin.
50重量%以下だと架橋密度が、上がらず耐半田ストレ
ス性が不充分である。更に式中のR1はメチル基、Rz
はL−ブチル基、またR3はメチル基及び水素原子が好
ましい0式中のnとmの比率はnが1に対してmが0.
1〜0.6となる範囲が好ましく、更に好ましくは0.
2〜0.4の範囲が良い。If it is less than 50% by weight, the crosslinking density will not increase and the solder stress resistance will be insufficient. Furthermore, R1 in the formula is a methyl group, Rz
is an L-butyl group, and R3 is preferably a methyl group and a hydrogen atom.The ratio of n and m in formula 0 is such that n is 1 and m is 0.
The range is preferably 1 to 0.6, more preferably 0.
A range of 2 to 0.4 is preferable.
この場合nが1としたときmの比率が0.1より小さい
と成形時の硬化性が上がらず、成形性が悪くなる傾向が
あり、またmの比率が0.6より大きいと吸水性が上が
り、半田浸漬時の熱衝撃が大きく、耐半田ストレス性が
悪くなる傾向がある。In this case, when n is 1, if the ratio of m is smaller than 0.1, the curing properties during molding will not improve and the moldability will tend to deteriorate, and if the ratio of m is larger than 0.6, water absorption will decrease. temperature, thermal shock during solder immersion is large, and solder stress resistance tends to be poor.
又2官能以下のエポキシ樹脂では、架橋密度が上がらず
耐熱性が劣り耐半田ストレス性の効果が得られない。Furthermore, when using an epoxy resin with less than two functional groups, the crosslinking density does not increase, the heat resistance becomes poor, and the effect of solder stress resistance cannot be obtained.
ここでいうエポキシ樹脂とは、エポキシ基を有するもの
全般をいう、たとえばビスフェノール型エポキシ樹脂、
ノボラック型エポキシ樹脂・トリアジン核含有エポキシ
樹脂等のことをいう。The epoxy resin referred to here refers to all those having an epoxy group, such as bisphenol type epoxy resin,
Refers to novolac type epoxy resin, triazine core-containing epoxy resin, etc.
充填材としては平均粒径が20〜60μmであり、見掛
密度が0.1〜0.6 g /ccであり、かつ比表面
積が5〜20rrr/gの多孔質シリカ粉末を使用する
充填材量の5〜100重量%の範囲で使用する。As a filler, a porous silica powder having an average particle size of 20 to 60 μm, an apparent density of 0.1 to 0.6 g/cc, and a specific surface area of 5 to 20 rrr/g is used. It is used in an amount of 5 to 100% by weight.
多孔質シリカ粉末は、その平均粒径が5μm未満又は4
0(tmを越えると流動性が低下し、いずれの場合も、
好ましくない、又見掛は密度が0.6g / ccを越
えると半田熱ストレスによるクラックが発生し易くなり
、耐湿性が低下してしまい好ましくない。Porous silica powder has an average particle size of less than 5 μm or 4 μm.
0 (tm), the fluidity decreases, and in any case,
Also, if the apparent density exceeds 0.6 g/cc, cracks are likely to occur due to soldering heat stress, and moisture resistance decreases, which is undesirable.
さらに比表面積が5m/g未満であると半田づけ工程で
クラックが発生し易く、耐湿性が低下してしまう、又2
0m2f/g以上となれば流動性がいちぢるしく低下し
てしまい好ましくない。Furthermore, if the specific surface area is less than 5 m/g, cracks are likely to occur during the soldering process, and moisture resistance will decrease.
If it exceeds 0 m2f/g, the fluidity will drop significantly, which is not preferable.
さらに多孔質シリカ粉末が、使用充填材の量の5重置%
未満であれば半田づけ工程でクラックが発生しやすくな
り、耐湿性が低下し、その目的とする特性が得られない
。In addition, porous silica powder is added at 5% of the amount of filler used.
If it is less than that, cracks are likely to occur during the soldering process, moisture resistance is reduced, and the desired characteristics cannot be obtained.
また多孔質シリカ粉末が、使用充填材の量の80%を越
えれば流動性が低下し成形性が悪くなり実用には適さな
い。Moreover, if the amount of porous silica powder exceeds 80% of the amount of the filler used, the fluidity will decrease and the moldability will deteriorate, making it unsuitable for practical use.
又、多孔質シリカ粉末以外の充填材としては通常のシリ
カ粉末やアルミナ等があげられ、とくに熔融シリカ粉末
が好ましい。In addition, examples of fillers other than porous silica powder include ordinary silica powder and alumina, with fused silica powder being particularly preferred.
本発明に使用される硬化促進剤はエポキシ基とフェノー
ル性水酸基との反応を促進するものであればよく、一般
に封止用材料に使用されているものを広く使用すること
ができ、例えばジアザビシクロウンデセン(DBU)、
トリフェニルホスフィン(TPP)、ジメチルベンジル
アミン(BDMA)や2メチルイミダゾール(2MZ)
等が単独もしくは2種類以上混合して用いられる。The curing accelerator used in the present invention may be one that promotes the reaction between the epoxy group and the phenolic hydroxyl group, and a wide variety of those commonly used in sealing materials can be used, such as diaza. Bicycloundesene (DBU),
Triphenylphosphine (TPP), dimethylbenzylamine (BDMA) and 2methylimidazole (2MZ)
etc. may be used alone or in combination of two or more.
本発明の封止用エポキシ樹脂組成物はエポキシ樹脂、硬
化剤、無機充填剤及び硬化促進剤を必須成分とするが、
これ以外に必要に応じてシランカップリング剤、ブロム
化エポキシ樹脂、三酸化アンチモン、ヘキサブロムベン
ゼン等の難燃剤、カーボンブラック、ベンガラ等の着色
剤、天然ワックス、合成ワックス等の離型剤及びシリコ
ーンオイル、ゴム等の低応力添加剤等の種々の添加剤を
適宜配合しても差し支えがない。The epoxy resin composition for sealing of the present invention contains an epoxy resin, a curing agent, an inorganic filler, and a curing accelerator as essential components,
In addition to this, silane coupling agents, brominated epoxy resins, antimony trioxide, flame retardants such as hexabromobenzene, colorants such as carbon black and red iron, mold release agents such as natural wax and synthetic wax, and silicone There is no problem in appropriately blending various additives such as low stress additives such as oil and rubber.
又、本発明の封止用エポキシ樹脂組成物を成形材料とし
て製造するには、エポキシ樹脂、硬化剤硬化促進剤、充
填剤、その他の添加剤をミキサー等によって十分に均一
に混合した後、さらに熱ロールまたはニーダ−等で溶融
混練し、冷却後粉砕して成形材料とすることができる。In addition, in order to produce the epoxy resin composition for sealing of the present invention as a molding material, the epoxy resin, curing agent curing accelerator, filler, and other additives are thoroughly and uniformly mixed using a mixer or the like, and then further A molding material can be obtained by melt-kneading with a hot roll or kneader, cooling, and pulverizing.
これらの成形材料は電子部品あるいは電気部品の封止、
被覆、絶縁等に適用することができる。These molding materials are used for sealing electronic or electrical parts,
Can be applied to coating, insulation, etc.
実施例1
下記組成物
式(n)で示されるトサス(ヒドロキシアルキルフェニ
ル)メタントリグリシジルエーテル15重量部
(n :m−3: 1、n十m−lN10)オルトクレ
ゾールノボラック
エポキシ樹脂 5重量部
フェールノボラック樹脂 10重量部多孔質
シリカ粉末(平均粒径15μm、見掛は密度0.3g/
cc、比表面積7nf/g)
35重量部溶融シリカ粉末 3
3.8重量部トリフェニルホスフィン 0.
2重1部カーボンブラック 0.5重
量部カルナバワックス 0.5重量部
を、ミキサーで常温で混合し、70〜t o o ’c
で2軸ロールにより混練し、冷却後粉砕し成形材料とし
た。Example 1 15 parts by weight of tosas(hydroxyalkylphenyl)methane triglycidyl ether represented by the following composition formula (n) (n: m-3: 1, n0 m-lN10) 5 parts by weight of ortho-cresol novolak epoxy resin Fer Novolac resin 10 parts by weight Porous silica powder (average particle size 15 μm, apparent density 0.3 g/
cc, specific surface area 7nf/g)
35 parts by weight fused silica powder 3
3.8 parts by weight Triphenylphosphine 0.
2 parts, 1 part, carbon black, 0.5 parts by weight, carnauba wax, 0.5 parts by weight, were mixed at room temperature in a mixer, and the mixture was heated to 70 to 100 ml.
The mixture was kneaded using twin-screw rolls, cooled, and then ground to obtain a molding material.
得られた成形材料をタブレット化し、低圧トランスファ
ー成形機にて175℃、70kg/d、120秒の条件
で半田クラック試験用として6×6mのチップを52p
パツケージに封止し、又半田耐湿性試験用として3×6
閣のチップを16PsOPパンケージに封止した。The obtained molding material was made into tablets, and 6 x 6 m chips were made into 52p chips for solder crack testing using a low-pressure transfer molding machine at 175°C, 70 kg/d, and 120 seconds.
3 x 6 for sealing in a package and for solder moisture resistance test.
The cabinet chip was sealed in a 16PsOP package.
封止したテスト用素子について下記の半田クラック試験
及び半田耐湿性試験をおこなった。The following solder crack test and solder moisture resistance test were conducted on the sealed test device.
半田クランク試験:封止したテスト用素子を85℃、8
5%RHの環環境下で48H「および72Hr処理し、
その後250℃の半田槽に10秒間浸漬後顕微鏡で外部
クラックを観察した。Solder crank test: sealed test element at 85℃, 8
48H and 72Hr treatment in a ring environment of 5% RH,
Thereafter, it was immersed in a solder bath at 250° C. for 10 seconds, and external cracks were observed using a microscope.
半田耐湿性試験:封止したテスト用素子を85で、85
%RHの環境下で?2Hr処理し、その後250 ”C
の半田槽にIO秒間浸漬後プレッシャーク7カー試験(
125℃、100%RH)を行い回路のオーブン不良を
測定した。Solder moisture resistance test: sealed test element at 85, 85
Under %RH environment? Treated for 2 hours, then heated to 250"C
Pressure tank 7 car test (
(125° C., 100% RH) to measure oven failure of the circuit.
試験結果を第1表に示す。The test results are shown in Table 1.
実施例2〜7
第1表の処方に従って配合し、実施例■と同様にして成
形材料を得た。この成形材料で試験用の封止した成形品
を得、この成形品を用いて実施例1と同様に半田クラン
ク試験及び半田耐湿性試験を行なった。試験結果を第1
表に示す。Examples 2 to 7 Molding materials were obtained in the same manner as in Example (2) by blending according to the formulations in Table 1. A sealed molded product for testing was obtained using this molding material, and a solder crank test and a solder moisture resistance test were conducted in the same manner as in Example 1 using this molded product. Test results first
Shown in the table.
比較例1〜6
第1表の処方に従って配合し、実施例1と同様にして成
形材料を得た。この成形材料で試験用の封止した成形品
を得、この成形品を用いて実施例1と同様に半田クラッ
ク試験及び半田耐湿性試験を行なった。試験結果を第1
表に示す。Comparative Examples 1 to 6 Molding materials were obtained in the same manner as in Example 1 by blending according to the formulations in Table 1. A sealed molded article for testing was obtained using this molding material, and a solder crack test and a solder moisture resistance test were conducted in the same manner as in Example 1 using this molded article. Test results first
Shown in the table.
本発明に従うと従来技術では得ることのできなかった耐
熱性及び、可撓性を有するエポキシ樹脂組成物を得るこ
とができるので、半田付は工程による急激な温度変化に
よる熱ストレスを受けたときの耐クラツク性に非常に優
れ、更に耐湿性が良好なことから電子、電気部品の封止
用、被覆用絶縁用等に用いた場合、特に表面実装パッケ
ージに搭載された高集積大型チップtCにおいて信頼性
が非常に必要とする製品について好適である。According to the present invention, it is possible to obtain an epoxy resin composition that has heat resistance and flexibility that could not be obtained using conventional techniques. It has excellent crack resistance and good moisture resistance, so it is reliable when used for sealing electronic and electrical components, coating insulation, etc., especially in highly integrated large chip tC mounted on surface mount packages. Suitable for products that require high performance.
Claims (1)
とmは0以上の整数、n+m=1〜10であり、式中の
R_1R_2R_3はそれぞれ同一又は異なり、H、ア
ルキル基、及びCl、Br等のハロゲンの中から選ばれ
、少なくとも1種以上の官能基をあられす)を総エポキ
シ樹脂量に対して50〜100重量%を含むエポキシ樹
脂 (B)フェノール樹脂硬化剤 (C)平均粒径が5〜40μmであり見掛け密度が0.
1〜0.6g/ccであり、且つ比表面積が5〜20m
^2f/gの多孔質シルカ粉末を総充填材量に対して5
〜100重量%含む充填材。 (D)硬化促進剤を必須成分とすることを特徴とする半
導体封止用エポキシ樹脂組成物。(1) (A) Multifunctional epoxy resin (n
and m are integers of 0 or more, n+m = 1 to 10, and R_1R_2R_3 in the formula are each the same or different and are selected from H, an alkyl group, and a halogen such as Cl, Br, and at least one functional group. Epoxy resin (B) phenolic resin curing agent (C) containing 50 to 100% by weight of 50 to 100 wt.
1 to 0.6 g/cc, and a specific surface area of 5 to 20 m
^2f/g porous silica powder to the total amount of filler
Filler containing ~100% by weight. (D) An epoxy resin composition for semiconductor encapsulation, which contains a curing accelerator as an essential component.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP18175088A JPH0232115A (en) | 1988-07-22 | 1988-07-22 | Epoxy resin composition for sealing semiconductor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP18175088A JPH0232115A (en) | 1988-07-22 | 1988-07-22 | Epoxy resin composition for sealing semiconductor |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH0232115A true JPH0232115A (en) | 1990-02-01 |
Family
ID=16106230
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP18175088A Pending JPH0232115A (en) | 1988-07-22 | 1988-07-22 | Epoxy resin composition for sealing semiconductor |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH0232115A (en) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0232116A (en) * | 1988-07-22 | 1990-02-01 | Sumitomo Bakelite Co Ltd | Epoxy resin composition for sealing semiconductor |
EP0372983A2 (en) * | 1988-12-08 | 1990-06-13 | Sumitomo Bakelite Company Limited | Epoxy resin composition for semiconductor sealing |
JPH02173033A (en) * | 1988-12-27 | 1990-07-04 | Sumitomo Bakelite Co Ltd | Epoxy resin composition for semiconductor sealing |
JP2001220496A (en) * | 1999-12-02 | 2001-08-14 | Shin Etsu Chem Co Ltd | Epoxy resin composition and open tubular package for semiconductor device element |
Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57141419A (en) * | 1981-02-27 | 1982-09-01 | Mitsubishi Petrochem Co Ltd | Production of polyepoxide |
JPS59129222A (en) * | 1983-01-14 | 1984-07-25 | Matsushita Electric Works Ltd | Epoxy resin molding material |
JPS61143466A (en) * | 1984-12-18 | 1986-07-01 | Sumitomo Bakelite Co Ltd | Epoxy resin composition |
JPS62132916A (en) * | 1985-12-06 | 1987-06-16 | Hitachi Ltd | Thermosetting resin composition |
JPS62290720A (en) * | 1986-06-11 | 1987-12-17 | Hitachi Chem Co Ltd | Epoxy resin molding material for sealing electronic component |
JPS6333412A (en) * | 1986-07-28 | 1988-02-13 | Hitachi Ltd | Epoxy resin composition and semiconductor device |
JPH01242615A (en) * | 1988-03-23 | 1989-09-27 | Sumitomo Bakelite Co Ltd | Epoxy resin composition for sealing semiconductor |
JPH0232116A (en) * | 1988-07-22 | 1990-02-01 | Sumitomo Bakelite Co Ltd | Epoxy resin composition for sealing semiconductor |
-
1988
- 1988-07-22 JP JP18175088A patent/JPH0232115A/en active Pending
Patent Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57141419A (en) * | 1981-02-27 | 1982-09-01 | Mitsubishi Petrochem Co Ltd | Production of polyepoxide |
JPS59129222A (en) * | 1983-01-14 | 1984-07-25 | Matsushita Electric Works Ltd | Epoxy resin molding material |
JPS61143466A (en) * | 1984-12-18 | 1986-07-01 | Sumitomo Bakelite Co Ltd | Epoxy resin composition |
JPS62132916A (en) * | 1985-12-06 | 1987-06-16 | Hitachi Ltd | Thermosetting resin composition |
JPS62290720A (en) * | 1986-06-11 | 1987-12-17 | Hitachi Chem Co Ltd | Epoxy resin molding material for sealing electronic component |
JPS6333412A (en) * | 1986-07-28 | 1988-02-13 | Hitachi Ltd | Epoxy resin composition and semiconductor device |
JPH01242615A (en) * | 1988-03-23 | 1989-09-27 | Sumitomo Bakelite Co Ltd | Epoxy resin composition for sealing semiconductor |
JPH0232116A (en) * | 1988-07-22 | 1990-02-01 | Sumitomo Bakelite Co Ltd | Epoxy resin composition for sealing semiconductor |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0232116A (en) * | 1988-07-22 | 1990-02-01 | Sumitomo Bakelite Co Ltd | Epoxy resin composition for sealing semiconductor |
EP0372983A2 (en) * | 1988-12-08 | 1990-06-13 | Sumitomo Bakelite Company Limited | Epoxy resin composition for semiconductor sealing |
JPH02173033A (en) * | 1988-12-27 | 1990-07-04 | Sumitomo Bakelite Co Ltd | Epoxy resin composition for semiconductor sealing |
JP2001220496A (en) * | 1999-12-02 | 2001-08-14 | Shin Etsu Chem Co Ltd | Epoxy resin composition and open tubular package for semiconductor device element |
KR100678345B1 (en) * | 1999-12-02 | 2007-02-05 | 신에쓰 가가꾸 고교 가부시끼가이샤 | Epoxy resin compositions and premolded semiconductor packages |
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