JPS62290720A - Epoxy resin molding material for sealing electronic component - Google Patents
Epoxy resin molding material for sealing electronic componentInfo
- Publication number
- JPS62290720A JPS62290720A JP13559986A JP13559986A JPS62290720A JP S62290720 A JPS62290720 A JP S62290720A JP 13559986 A JP13559986 A JP 13559986A JP 13559986 A JP13559986 A JP 13559986A JP S62290720 A JPS62290720 A JP S62290720A
- Authority
- JP
- Japan
- Prior art keywords
- epoxy resin
- component
- molding material
- resin molding
- electronic components
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 229920000647 polyepoxide Polymers 0.000 title claims abstract description 56
- 239000003822 epoxy resin Substances 0.000 title claims abstract description 55
- 238000007789 sealing Methods 0.000 title claims abstract description 5
- 239000012778 molding material Substances 0.000 title claims description 35
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 claims abstract description 30
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N Phenol Chemical compound OC1=CC=CC=C1 ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 claims abstract description 11
- RGHHSNMVTDWUBI-UHFFFAOYSA-N 4-hydroxybenzaldehyde Chemical compound OC1=CC=C(C=O)C=C1 RGHHSNMVTDWUBI-UHFFFAOYSA-N 0.000 claims abstract description 8
- 125000002887 hydroxy group Chemical group [H]O* 0.000 claims abstract description 8
- 150000001875 compounds Chemical class 0.000 claims abstract description 7
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 claims abstract description 6
- 239000000460 chlorine Substances 0.000 claims abstract description 6
- 229910052801 chlorine Inorganic materials 0.000 claims abstract description 6
- 150000002989 phenols Chemical class 0.000 claims description 11
- 229920003986 novolac Polymers 0.000 abstract description 15
- 239000004593 Epoxy Substances 0.000 abstract description 8
- 229920005989 resin Polymers 0.000 abstract description 6
- 239000011347 resin Substances 0.000 abstract description 6
- 229920001568 phenolic resin Polymers 0.000 abstract description 5
- SMQUZDBALVYZAC-UHFFFAOYSA-N salicylaldehyde Chemical compound OC1=CC=CC=C1C=O SMQUZDBALVYZAC-UHFFFAOYSA-N 0.000 abstract description 4
- 125000000217 alkyl group Chemical group 0.000 abstract description 3
- 125000001436 propyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])[H] 0.000 abstract description 3
- 239000003086 colorant Substances 0.000 abstract description 2
- 239000007822 coupling agent Substances 0.000 abstract description 2
- 239000011256 inorganic filler Substances 0.000 abstract description 2
- 229910003475 inorganic filler Inorganic materials 0.000 abstract description 2
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 abstract description 2
- 238000002156 mixing Methods 0.000 abstract description 2
- 239000005011 phenolic resin Substances 0.000 abstract description 2
- 125000000999 tert-butyl group Chemical group [H]C([H])([H])C(*)(C([H])([H])[H])C([H])([H])[H] 0.000 abstract description 2
- KXGFMDJXCMQABM-UHFFFAOYSA-N 2-methoxy-6-methylphenol Chemical compound [CH]OC1=CC=CC([CH])=C1O KXGFMDJXCMQABM-UHFFFAOYSA-N 0.000 abstract 1
- 239000000463 material Substances 0.000 abstract 1
- 238000000465 moulding Methods 0.000 abstract 1
- 239000000047 product Substances 0.000 description 11
- IISBACLAFKSPIT-UHFFFAOYSA-N bisphenol A Chemical compound C=1C=C(O)C=CC=1C(C)(C)C1=CC=C(O)C=C1 IISBACLAFKSPIT-UHFFFAOYSA-N 0.000 description 7
- WSFSSNUMVMOOMR-UHFFFAOYSA-N Formaldehyde Chemical compound O=C WSFSSNUMVMOOMR-UHFFFAOYSA-N 0.000 description 6
- -1 bisphenol A1 Chemical class 0.000 description 6
- 230000000052 comparative effect Effects 0.000 description 6
- 239000000203 mixture Substances 0.000 description 5
- QTWJRLJHJPIABL-UHFFFAOYSA-N 2-methylphenol;3-methylphenol;4-methylphenol Chemical compound CC1=CC=C(O)C=C1.CC1=CC=CC(O)=C1.CC1=CC=CC=C1O QTWJRLJHJPIABL-UHFFFAOYSA-N 0.000 description 4
- 229930185605 Bisphenol Natural products 0.000 description 4
- YCIMNLLNPGFGHC-UHFFFAOYSA-N catechol Chemical compound OC1=CC=CC=C1O YCIMNLLNPGFGHC-UHFFFAOYSA-N 0.000 description 4
- 229930003836 cresol Natural products 0.000 description 4
- SLGWESQGEUXWJQ-UHFFFAOYSA-N formaldehyde;phenol Chemical compound O=C.OC1=CC=CC=C1 SLGWESQGEUXWJQ-UHFFFAOYSA-N 0.000 description 4
- LNEPOXFFQSENCJ-UHFFFAOYSA-N haloperidol Chemical compound C1CC(O)(C=2C=CC(Cl)=CC=2)CCN1CCCC(=O)C1=CC=C(F)C=C1 LNEPOXFFQSENCJ-UHFFFAOYSA-N 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- GHMLBKRAJCXXBS-UHFFFAOYSA-N resorcinol Chemical compound OC1=CC=CC(O)=C1 GHMLBKRAJCXXBS-UHFFFAOYSA-N 0.000 description 4
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 3
- SJRJJKPEHAURKC-UHFFFAOYSA-N N-Methylmorpholine Chemical compound CN1CCOCC1 SJRJJKPEHAURKC-UHFFFAOYSA-N 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 238000005227 gel permeation chromatography Methods 0.000 description 3
- 239000002994 raw material Substances 0.000 description 3
- LTPBRCUWZOMYOC-UHFFFAOYSA-N Beryllium oxide Chemical compound O=[Be] LTPBRCUWZOMYOC-UHFFFAOYSA-N 0.000 description 2
- VTYYLEPIZMXCLO-UHFFFAOYSA-L Calcium carbonate Chemical compound [Ca+2].[O-]C([O-])=O VTYYLEPIZMXCLO-UHFFFAOYSA-L 0.000 description 2
- QIGBRXMKCJKVMJ-UHFFFAOYSA-N Hydroquinone Chemical compound OC1=CC=C(O)C=C1 QIGBRXMKCJKVMJ-UHFFFAOYSA-N 0.000 description 2
- CPLXHLVBOLITMK-UHFFFAOYSA-N Magnesium oxide Chemical compound [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- WYURNTSHIVDZCO-UHFFFAOYSA-N Tetrahydrofuran Chemical compound C1CCOC1 WYURNTSHIVDZCO-UHFFFAOYSA-N 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- ADCOVFLJGNWWNZ-UHFFFAOYSA-N antimony trioxide Chemical compound O=[Sb]O[Sb]=O ADCOVFLJGNWWNZ-UHFFFAOYSA-N 0.000 description 2
- PXKLMJQFEQBVLD-UHFFFAOYSA-N bisphenol F Chemical compound C1=CC(O)=CC=C1CC1=CC=C(O)C=C1 PXKLMJQFEQBVLD-UHFFFAOYSA-N 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 235000014113 dietary fatty acids Nutrition 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000006735 epoxidation reaction Methods 0.000 description 2
- 239000000194 fatty acid Substances 0.000 description 2
- 229930195729 fatty acid Natural products 0.000 description 2
- 150000004665 fatty acids Chemical class 0.000 description 2
- 230000009477 glass transition Effects 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000004898 kneading Methods 0.000 description 2
- WSFSSNUMVMOOMR-NJFSPNSNSA-N methanone Chemical compound O=[14CH2] WSFSSNUMVMOOMR-NJFSPNSNSA-N 0.000 description 2
- RPGWZZNNEUHDAQ-UHFFFAOYSA-N phenylphosphine Chemical compound PC1=CC=CC=C1 RPGWZZNNEUHDAQ-UHFFFAOYSA-N 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 150000003839 salts Chemical class 0.000 description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 229910000679 solder Inorganic materials 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- IMNIMPAHZVJRPE-UHFFFAOYSA-N triethylenediamine Chemical compound C1CN2CCN1CC2 IMNIMPAHZVJRPE-UHFFFAOYSA-N 0.000 description 2
- RIOQSEWOXXDEQQ-UHFFFAOYSA-N triphenylphosphine Chemical compound C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1 RIOQSEWOXXDEQQ-UHFFFAOYSA-N 0.000 description 2
- 229910052845 zircon Inorganic materials 0.000 description 2
- GFQYVLUOOAAOGM-UHFFFAOYSA-N zirconium(iv) silicate Chemical compound [Zr+4].[O-][Si]([O-])([O-])[O-] GFQYVLUOOAAOGM-UHFFFAOYSA-N 0.000 description 2
- RYHBNJHYFVUHQT-UHFFFAOYSA-N 1,4-Dioxane Chemical compound C1COCCO1 RYHBNJHYFVUHQT-UHFFFAOYSA-N 0.000 description 1
- AHDSRXYHVZECER-UHFFFAOYSA-N 2,4,6-tris[(dimethylamino)methyl]phenol Chemical compound CN(C)CC1=CC(CN(C)C)=C(O)C(CN(C)C)=C1 AHDSRXYHVZECER-UHFFFAOYSA-N 0.000 description 1
- YTWBFUCJVWKCCK-UHFFFAOYSA-N 2-heptadecyl-1h-imidazole Chemical compound CCCCCCCCCCCCCCCCCC1=NC=CN1 YTWBFUCJVWKCCK-UHFFFAOYSA-N 0.000 description 1
- LXBGSDVWAMZHDD-UHFFFAOYSA-N 2-methyl-1h-imidazole Chemical compound CC1=NC=CN1 LXBGSDVWAMZHDD-UHFFFAOYSA-N 0.000 description 1
- ZCUJYXPAKHMBAZ-UHFFFAOYSA-N 2-phenyl-1h-imidazole Chemical compound C1=CNC(C=2C=CC=CC=2)=N1 ZCUJYXPAKHMBAZ-UHFFFAOYSA-N 0.000 description 1
- VPWNQTHUCYMVMZ-UHFFFAOYSA-N 4,4'-sulfonyldiphenol Chemical compound C1=CC(O)=CC=C1S(=O)(=O)C1=CC=C(O)C=C1 VPWNQTHUCYMVMZ-UHFFFAOYSA-N 0.000 description 1
- TYOXIFXYEIILLY-UHFFFAOYSA-N 5-methyl-2-phenyl-1h-imidazole Chemical compound N1C(C)=CN=C1C1=CC=CC=C1 TYOXIFXYEIILLY-UHFFFAOYSA-N 0.000 description 1
- 229910052582 BN Inorganic materials 0.000 description 1
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 1
- WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical compound [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 241000238557 Decapoda Species 0.000 description 1
- BRLQWZUYTZBJKN-UHFFFAOYSA-N Epichlorohydrin Chemical compound ClCC1CO1 BRLQWZUYTZBJKN-UHFFFAOYSA-N 0.000 description 1
- UEEJHVSXFDXPFK-UHFFFAOYSA-N N-dimethylaminoethanol Chemical compound CN(C)CCO UEEJHVSXFDXPFK-UHFFFAOYSA-N 0.000 description 1
- GSEJCLTVZPLZKY-UHFFFAOYSA-N Triethanolamine Chemical compound OCCN(CCO)CCO GSEJCLTVZPLZKY-UHFFFAOYSA-N 0.000 description 1
- 239000003377 acid catalyst Substances 0.000 description 1
- 230000002378 acidificating effect Effects 0.000 description 1
- 150000001343 alkyl silanes Chemical class 0.000 description 1
- 239000011324 bead Substances 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 239000004841 bisphenol A epoxy resin Substances 0.000 description 1
- GDTBXPJZTBHREO-UHFFFAOYSA-N bromine Substances BrBr GDTBXPJZTBHREO-UHFFFAOYSA-N 0.000 description 1
- 229910052794 bromium Inorganic materials 0.000 description 1
- 229910000019 calcium carbonate Inorganic materials 0.000 description 1
- 239000000378 calcium silicate Substances 0.000 description 1
- 229910052918 calcium silicate Inorganic materials 0.000 description 1
- OYACROKNLOSFPA-UHFFFAOYSA-N calcium;dioxido(oxo)silane Chemical compound [Ca+2].[O-][Si]([O-])=O OYACROKNLOSFPA-UHFFFAOYSA-N 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000006229 carbon black Substances 0.000 description 1
- 239000004203 carnauba wax Substances 0.000 description 1
- 235000013869 carnauba wax Nutrition 0.000 description 1
- 238000005266 casting Methods 0.000 description 1
- 239000003054 catalyst Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000000748 compression moulding Methods 0.000 description 1
- 238000009833 condensation Methods 0.000 description 1
- 230000005494 condensation Effects 0.000 description 1
- 239000007859 condensation product Substances 0.000 description 1
- 238000006482 condensation reaction Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000004132 cross linking Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 229910002026 crystalline silica Inorganic materials 0.000 description 1
- 229960002887 deanol Drugs 0.000 description 1
- GYZLOYUZLJXAJU-UHFFFAOYSA-N diglycidyl ether Chemical class C1OC1COCC1CO1 GYZLOYUZLJXAJU-UHFFFAOYSA-N 0.000 description 1
- XXBDWLFCJWSEKW-UHFFFAOYSA-N dimethylbenzylamine Chemical compound CN(C)CC1=CC=CC=C1 XXBDWLFCJWSEKW-UHFFFAOYSA-N 0.000 description 1
- KZHJGOXRZJKJNY-UHFFFAOYSA-N dioxosilane;oxo(oxoalumanyloxy)alumane Chemical compound O=[Si]=O.O=[Si]=O.O=[Al]O[Al]=O.O=[Al]O[Al]=O.O=[Al]O[Al]=O KZHJGOXRZJKJNY-UHFFFAOYSA-N 0.000 description 1
- GPAYUJZHTULNBE-UHFFFAOYSA-N diphenylphosphine Chemical compound C=1C=CC=CC=1PC1=CC=CC=C1 GPAYUJZHTULNBE-UHFFFAOYSA-N 0.000 description 1
- NJLLQSBAHIKGKF-UHFFFAOYSA-N dipotassium dioxido(oxo)titanium Chemical compound [K+].[K+].[O-][Ti]([O-])=O NJLLQSBAHIKGKF-UHFFFAOYSA-N 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 150000002148 esters Chemical class 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- 229910052839 forsterite Inorganic materials 0.000 description 1
- 239000005350 fused silica glass Substances 0.000 description 1
- 238000007429 general method Methods 0.000 description 1
- 239000003365 glass fiber Substances 0.000 description 1
- 230000007062 hydrolysis Effects 0.000 description 1
- 238000006460 hydrolysis reaction Methods 0.000 description 1
- 238000001746 injection moulding Methods 0.000 description 1
- HCWCAKKEBCNQJP-UHFFFAOYSA-N magnesium orthosilicate Chemical compound [Mg+2].[Mg+2].[O-][Si]([O-])([O-])[O-] HCWCAKKEBCNQJP-UHFFFAOYSA-N 0.000 description 1
- 239000000395 magnesium oxide Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- UJNZOIKQAUQOCN-UHFFFAOYSA-N methyl(diphenyl)phosphane Chemical compound C=1C=CC=CC=1P(C)C1=CC=CC=C1 UJNZOIKQAUQOCN-UHFFFAOYSA-N 0.000 description 1
- SNVLJLYUUXKWOJ-UHFFFAOYSA-N methylidenecarbene Chemical group C=[C] SNVLJLYUUXKWOJ-UHFFFAOYSA-N 0.000 description 1
- 239000006082 mold release agent Substances 0.000 description 1
- 229910052863 mullite Inorganic materials 0.000 description 1
- JRZJOMJEPLMPRA-UHFFFAOYSA-N olefin Natural products CCCCCCCC=C JRZJOMJEPLMPRA-UHFFFAOYSA-N 0.000 description 1
- 150000003003 phosphines Chemical class 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 238000003918 potentiometric titration Methods 0.000 description 1
- 230000002035 prolonged effect Effects 0.000 description 1
- 238000010298 pulverizing process Methods 0.000 description 1
- 238000010992 reflux Methods 0.000 description 1
- 238000012216 screening Methods 0.000 description 1
- FZHAPNGMFPVSLP-UHFFFAOYSA-N silanamine Chemical class [SiH3]N FZHAPNGMFPVSLP-UHFFFAOYSA-N 0.000 description 1
- 150000004756 silanes Chemical class 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 239000011029 spinel Substances 0.000 description 1
- 229910052596 spinel Inorganic materials 0.000 description 1
- 150000003512 tertiary amines Chemical class 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- YLQBMQCUIZJEEH-UHFFFAOYSA-N tetrahydrofuran Natural products C=1C=COC=1 YLQBMQCUIZJEEH-UHFFFAOYSA-N 0.000 description 1
- 238000001721 transfer moulding Methods 0.000 description 1
- TUQOTMZNTHZOKS-UHFFFAOYSA-N tributylphosphine Chemical compound CCCCP(CCCC)CCCC TUQOTMZNTHZOKS-UHFFFAOYSA-N 0.000 description 1
- MDCWDBMBZLORER-UHFFFAOYSA-N triphenyl borate Chemical compound C=1C=CC=CC=1OB(OC=1C=CC=CC=1)OC1=CC=CC=C1 MDCWDBMBZLORER-UHFFFAOYSA-N 0.000 description 1
- UKRDPEFKFJNXQM-UHFFFAOYSA-N vinylsilane Chemical class [SiH3]C=C UKRDPEFKFJNXQM-UHFFFAOYSA-N 0.000 description 1
- 239000001993 wax Substances 0.000 description 1
- 125000002256 xylenyl group Chemical class C1(C(C=CC=C1)C)(C)* 0.000 description 1
Landscapes
- Epoxy Resins (AREA)
Abstract
Description
【発明の詳細な説明】
３、発明の詳細な説明
〔産業上の利用分野〕
本発明は耐熱性に優れた電子部品封止用エポキシ樹脂成
形材料に関するものである。Detailed Description of the Invention 3. Detailed Description of the Invention [Field of Industrial Application] The present invention relates to an epoxy resin molding material for encapsulating electronic components with excellent heat resistance.
従来、コイル、コンデンサ、トランジスタ、■Ｃなどの
電子部品封止用としては、エポキシ樹脂成形材料が広く
用いられている。特にガラス転移温度が高く、すなわち
耐熱性の優れた組成としては、フェノール類とホルムア
ルデヒドのノボラックをエポキシ化したエポキシ樹脂が
用いられており、その硬化剤としてはフェノール・ホル
ムアルデヒドノボラック樹脂が用いられている。Conventionally, epoxy resin molding materials have been widely used for encapsulating electronic components such as coils, capacitors, transistors, and C. In particular, epoxy resins with a high glass transition temperature, that is, excellent heat resistance, are used as epoxidized novolacs of phenols and formaldehyde, and phenol/formaldehyde novolac resins are used as the curing agent. .
トランジスタ、ＩＣなどの電子部品には素子の発熱によ
り、素子温度が高くなるものがある。また、配線基板へ
の実装時に半田ディプ、半田リフローなどの加熱工程が
あり、電子部品のスクリーニング時に高温動作試験を行
うものもある。このような状況を考慮すると、電子部品
封止用成形材料には十分高いガラス転移温度（以下Ｔｇ
と略す）が必要になる。すなわち、Ｔｇを境に成形材料
の物性が大きく変化し、例えば線膨張係数はＴｇ以上で
３倍前後になるため、素子と成形材料間には大きな歪み
が発生する。この歪みを小さくするには成形材料のＴｇ
を向上させる必要があり、従来の成形材料の組成では不
十分である。BACKGROUND ART Some electronic components such as transistors and ICs have an element temperature that increases due to the heat generated by the element. Additionally, there are heating processes such as solder dipping and solder reflow when mounted on a wiring board, and there are also products that perform high-temperature operation tests when screening electronic components. Considering this situation, molding materials for encapsulating electronic components must have a sufficiently high glass transition temperature (hereinafter referred to as Tg).
) is required. That is, the physical properties of the molding material change significantly after Tg, and for example, the coefficient of linear expansion becomes about three times as high as Tg or higher, resulting in large distortion between the element and the molding material. To reduce this distortion, the Tg of the molding material
There is a need to improve this, and the compositions of conventional molding materials are insufficient.
本発明は、上記問題点を解決し、Ｔｇが高く、耐熱性に
優れた電子部品封止用エポキシ樹脂成形材料を提供せん
として為されたものである。The present invention was made to solve the above-mentioned problems and provide an epoxy resin molding material for encapsulating electronic components that has a high Tg and excellent heat resistance.
本発明の電子部品封止用エポキシ樹脂成形材料は、
（Ａ）フェノール類とヒドロキシベンズアルデヒドとの
縮合物をエポキシ化して得られるエポキシ樹脂および
（Ｂ）１分子中に２個以上のフェノール性水酸基を有す
る化合物
を必須成分として成ることを特徴とする。The epoxy resin molding material for encapsulating electronic components of the present invention includes (A) an epoxy resin obtained by epoxidizing a condensate of phenols and hydroxybenzaldehyde; and (B) an epoxy resin having two or more phenolic hydroxyl groups in one molecule. It is characterized in that it consists of a compound having as an essential component.
本発明における（Ａ）のエポキシ樹脂としては、フェノ
ール、クレゾールをはじめ、プロピル基、ｔｅｒｔ−ブ
チル基などのアルキル基を有するｍ個フエノール類とサ
リチルアルデヒドなどヒドロキシベンズアルデヒドとの
酸触媒下における縮合物を原料とし、エピクロルヒドリ
ンなどによりエポキシ化した化合物が挙げられるが、フ
ェノール類、ヒドロキシベンズアルデヒドの種類につい
ては特に限定するものではなく、縮合およびエポキシ化
の方法についても特に限定するものではない。The epoxy resin (A) in the present invention is a condensation product of m phenols having alkyl groups such as phenol, cresol, propyl group and tert-butyl group and hydroxybenzaldehyde such as salicylaldehyde under acid catalyst. Examples include compounds epoxidized with epichlorohydrin or the like as a raw material, but there are no particular limitations on the types of phenols or hydroxybenzaldehyde, and there are no particular limitations on the condensation and epoxidation methods.
本発明の（Ａ）のエポキシ樹脂の代表的な構造式は
（式中、ＲはＨ１メチル、プロピル、ｔｅｒＬ−ブチル
などのアルキル基であり、ｎはＯまたは正の整数を表す
。）で示される。A typical structural formula of the epoxy resin (A) of the present invention is shown by (wherein, R is an alkyl group such as H1 methyl, propyl, terL-butyl, etc., and n represents O or a positive integer). It will be done.
厳密には、上式の構造の他にｎが大きな場合、枝分かれ
した多種の技分かれ構造が考えられる。Strictly speaking, in addition to the structure of the above formula, when n is large, various types of branched technique division structures are possible.
上式中のｎ＝０の場合、ベンゼン核の積数は３となり、
すなわち３核体（３官能エポキシ樹脂）のみとなるが、
ｎが大きくなるに従い、フェノール類とヒドロキシベン
ズアルデヒドから発生するベンゼン積数は３＋２ｎの割
合で多くなり、実際のエポキシ樹脂はこれらの集合体で
ある。本発明の（Ａ）のエポキシ樹脂において、フェノ
ール類とヒドロキシベンズアルデヒドから発生するベン
ゼン核の平均積数は大きくなる程、Ｔｇ回向上効果のあ
ることが、本発明に係る検討の結果明らかになっている
。しかし、ベンゼン核の平均積数が大きくなるに伴い、
エポキシ樹脂の軟化点が高くなり、成形材料としての流
動性を低下させる欠点がある。従って、本発明の特徴を
十分に発揮するためには、ベンゼン核の平均積数は４以
上、１０以下が好ましい。この場合のベンゼン核の平均
積数はＧＰＣ（ゲルパーミェーションクロマトグラフィ
）法で測定した分子量分布から求めることができる。本
発明で使用したＧＰＣは東洋曹達製ＨＬＣ８０１型、カ
ラムは同社製ＴＳＫ−Ｇｅｔ（Ｇ−３０００Ｈ，１本、
Ｇ−２０００Ｈ６３本）であり、溶媒はテトラヒドロフ
ランを用い、流速１．６ ｍｌ／ｍｉｎ 、試料濃度０
．２〜０．３ｇ／１０ｍ１の条件で測定を行った。分子
量分布からベンゼン核の平均積数を求める方法としては
参考文献（柘植、外；日本化学会誌、Ｎｏ、４、Ｐ２Ｏ
３，１９７２年）に記述がある。When n=0 in the above formula, the product number of benzene nuclei is 3,
In other words, there is only a trinuclear body (trifunctional epoxy resin), but
As n increases, the number of benzene products generated from phenols and hydroxybenzaldehyde increases at a ratio of 3+2n, and the actual epoxy resin is an aggregate of these. As a result of studies related to the present invention, it has become clear that in the epoxy resin (A) of the present invention, the larger the average number of benzene nuclei generated from phenols and hydroxybenzaldehyde, the more effective the Tg cycle is. There is. However, as the average product number of benzene nuclei increases,
This has the disadvantage that the softening point of the epoxy resin becomes high and the fluidity as a molding material decreases. Therefore, in order to fully exhibit the features of the present invention, the average number of benzene nuclei is preferably 4 or more and 10 or less. In this case, the average number of benzene nuclei can be determined from the molecular weight distribution measured by GPC (gel permeation chromatography). The GPC used in the present invention was Toyo Soda HLC801 model, and the column was TSK-Get (G-3000H, 1 column,
G-2000H (63 bottles), the solvent used was tetrahydrofuran, the flow rate was 1.6 ml/min, and the sample concentration was 0.
．． The measurement was carried out under the conditions of 2 to 0.3 g/10 m1. References (Tsuge, et al.; Journal of the Chemical Society of Japan, No. 4, P2O
3, 1972).
本発明の（Ａ）のエポキシ樹脂の純度、特に加水分解製
塩素量はＩＣなど素子上のアルミ配線腐食に係るため少
ない法がよく、耐湿性の優れた電子部品封土用エポキシ
樹脂成形材料を得るためには、５００ｐｐｍ以下である
ことが好ましい。本発明において、加水分解製塩素量と
は、試料１ｇをジオキサン３０ｉ１に溶解し、ＩＮ−Ｋ
ＯＨメタノール溶液５ｍ５奢ｌ加して３００分間リフラ
ックスた後、電位差滴定により求めた測定値をいう。The purity of the epoxy resin (A) of the present invention, especially the amount of chlorine produced by hydrolysis, is better as it is related to corrosion of aluminum wiring on elements such as ICs, and an epoxy resin molding material for electronic component enclosures with excellent moisture resistance is obtained. Therefore, it is preferably 500 ppm or less. In the present invention, the amount of hydrolyzed chlorine refers to the amount of chlorine obtained by dissolving 1 g of sample in dioxane 30i1 and
This refers to the measured value determined by potentiometric titration after adding 5ml of OH methanol solution and refluxing for 300 minutes.
本発明においては、（Ａ）のエポキシ樹脂以外のエポキ
シ樹脂を併用してもよい。例えば、通称エビ−ビス型と
呼ばれるビスフェノールＡ１ビスフエノールＦ１ビスフ
エノールＳなどのジグリシジルエーテル、フェノール類
とホルムアルデヒドとのノボラック樹脂をエポキシ化し
たもの、オレフィン結合のエポキシ化により誘導される
脂環型エポキシ樹脂などがあり、特に限定されるもので
ない。また、これらを適宜何種類でも併用することがで
きる。In the present invention, epoxy resins other than the epoxy resin (A) may be used in combination. For example, diglycidyl ethers such as bisphenol A1, bisphenol F1, and bisphenol S, which are commonly called shrimp type, epoxidized novolac resins of phenols and formaldehyde, and alicyclic epoxies derived by epoxidation of olefin bonds. There are resins and the like, but there are no particular limitations. Moreover, any number of these can be used in combination as appropriate.
本発明において、（Ｂ）の１分子中に２個以上のフェノ
ール性水酸基を有する化合物としては、フェノール、ク
レゾール、キシレノール、レゾルシン、カテコール、ビ
スフェノールＡ１ビスフエノールＦなどのフェノール類
とホルムアルデヒドとを酸性触媒化で縮合反応させて得
られるノボラック型フェノール樹脂、ビスフェノールＡ
１ビスフエノールＦ２ポリパラビニルフエノール樹脂、
レゾルシン、カテコール、ハイドロキノンなどの多価フ
ェノールなどがあり、単独または２種類以上併用しても
よい。また、（Ａ）と（Ｂ）の配合割合は（Ａ）のエポ
キシ樹脂との当量比（（Ｂ）の水酸基当量／（Ａ）のエ
ポキシ当量）を０．６〜１．３、さらに好ましくは０．
９〜１．１とすることが好ましい。In the present invention, as a compound having two or more phenolic hydroxyl groups in one molecule of (B), phenols such as phenol, cresol, xylenol, resorcinol, catechol, bisphenol A1 and bisphenol F, and formaldehyde are combined with an acidic catalyst. Novolac type phenol resin, bisphenol A, obtained by condensation reaction with
1 bisphenol F2 polyparavinylphenol resin,
Examples include polyhydric phenols such as resorcinol, catechol, and hydroquinone, which may be used alone or in combination of two or more. In addition, the blending ratio of (A) and (B) is such that the equivalent ratio of (A) to the epoxy resin (hydroxyl equivalent of (B)/epoxy equivalent of (A)) is 0.6 to 1.3, more preferably 0.
It is preferable to set it as 9-1.1.
また、本発明の電子部品封止用エポキシ樹脂成形材料に
は、エポキシ樹脂とフェノール性水酸基を有する化合物
の硬化反応を促進する硬化促進剤を配合することができ
る。この硬化促進剤としては、例えば、トリエチレンジ
アミン、ベンジルジメチルアミン、トリエタノールアミ
ン、ジメチルアミノエタノール、トリス（ジメチルアミ
ノメチル）フェノールなどの三級アミン類、２−メチル
イミダゾール、２−フェニルイミダゾール、２−フェニ
ル−４−メチルイミダゾール、２−ヘプタデシルイミダ
ゾールなどのイミダゾール類、トリブチルホスフィン、
メチルジフェニルホスフィン、トリフェニルホスフィン
、ジフェニルホスフィン、フェニルホスフィンなどの有
機ホスフィン類、テトラフェニルホスホニウムテトラフ
ェニルボレート、トリフェニルホスフィンテトラフェニ
ルボレート、２−エチル−４−メチルイミダゾールテト
ラフェニルボレート、Ｎ−メチルモルホリンテトラフェ
ニルボレートなどのテトラフェニルボロン塩などがある
。Furthermore, the epoxy resin molding material for encapsulating electronic components of the present invention may contain a curing accelerator that promotes the curing reaction between the epoxy resin and the compound having a phenolic hydroxyl group. Examples of the curing accelerator include tertiary amines such as triethylenediamine, benzyldimethylamine, triethanolamine, dimethylaminoethanol, and tris(dimethylaminomethyl)phenol, 2-methylimidazole, 2-phenylimidazole, 2- Imidazoles such as phenyl-4-methylimidazole and 2-heptadecylimidazole, tributylphosphine,
Organic phosphines such as methyldiphenylphosphine, triphenylphosphine, diphenylphosphine, phenylphosphine, tetraphenylphosphonium tetraphenylborate, triphenylphosphine tetraphenylborate, 2-ethyl-4-methylimidazole tetraphenylborate, N-methylmorpholine tetra Examples include tetraphenylboron salts such as phenylborate.
また、本発明の電子部品封止用エポキシ樹脂成形材料に
は、無機質充填剤として、結晶シリカ、溶融シリカ、ア
ルミナ、ジルコン、珪酸カルシウム、炭酸カルシウム、
炭化珪素、窒化珪素、窒化ホウ素、ベリリア、マグネシ
ア、ジルコニア、ジルコン、フォーステライト、ステア
タイト、スピネル、ムライト、チタニアなどの粉体、お
よびチタン酸カリウム、炭化珪素、窒化珪素、アルミナ
などの単結晶繊維、ガラス繊維などを１種類以上配合す
ることができる。無機質充填剤の配合量としては、特に
限定するものではないが、４０〜７０容量％が好ましい
。In addition, the epoxy resin molding material for encapsulating electronic components of the present invention includes crystalline silica, fused silica, alumina, zircon, calcium silicate, calcium carbonate,
Powders such as silicon carbide, silicon nitride, boron nitride, beryllia, magnesia, zirconia, zircon, forsterite, steatite, spinel, mullite, titania, etc., and single crystal fibers such as potassium titanate, silicon carbide, silicon nitride, alumina, etc. , glass fiber, etc., may be blended. The amount of the inorganic filler blended is not particularly limited, but is preferably 40 to 70% by volume.
また、本発明の電子部品封土用エポキシ樹脂成形材料に
は、高級脂肪酸、高級脂肪酸金属塩、エステル系ワック
スなどの離型剤、カーボンブランクなどの着色剤、エポ
キシシラン、アミノシラン、ビニルシラン、アルキルシ
ラン、有機チタネート、アルミニウムアルコレートなど
のカップリング剤を使用することができる。In addition, the epoxy resin molding material for electronic components of the present invention includes higher fatty acids, higher fatty acid metal salts, mold release agents such as ester waxes, colorants such as carbon blanks, epoxy silanes, aminosilanes, vinylsilanes, alkylsilanes, Coupling agents such as organic titanates, aluminum alcoholates, etc. can be used.
以上のような原材料を用いて電子部品封止用エポキシ樹
脂成形材料を作成する一般的な方法としては、所定の配
合量の原材料混合物をミキサー等によって充分混合した
後、熱ロール、押出機等によって混練し、冷却、粉砕す
ることによって、成形材料を得ることができる。本発明
で得られる成形材料を用いて電子部品を封止する方法と
しては、低圧トランスファ成形法が最も一般的であるが
、インジェクション成形、圧縮成形、注形などの方法に
よっても可能である。A general method for creating an epoxy resin molding material for electronic component encapsulation using the above raw materials is to thoroughly mix the raw material mixture in a predetermined amount using a mixer, etc., and then heat it using a hot roll, extruder, etc. A molding material can be obtained by kneading, cooling, and pulverizing. The most common method for sealing electronic components using the molding material obtained in the present invention is low-pressure transfer molding, but methods such as injection molding, compression molding, and casting can also be used.
本発明でＴｇが高く、すなわち耐熱性の良好な電子部品
封止用エポキシ樹脂成形材料が得られる理由は、（Ａ）
のエポキシ樹脂の構造によるものである。従来、高Ｔｇ
化に有利な多官能エポキシ樹脂としては、一般式
で示されるノボラック型エポキシ樹脂が広く用いられて
いる〔ｍは正の整数〕。この構造と本発明の（Ａ）のエ
ポキシ樹脂の構造を比較すると、本発明のエポキシ樹脂
では、上式中のメチレンの炭素原子にさらにグリシドキ
シフェニル基が付加した構造であるため、架橋密度が高
くなり、Ｔｇが高くなる。さらには、ベンゼン核の平均
積数を大きくすることで、エポキシ樹脂（プレポリマー
）の分子量が大きくなり、硬化後のＴｇがさらに高（な
ると考えられる。The reason why the present invention provides an epoxy resin molding material for encapsulating electronic components with a high Tg, that is, with good heat resistance, is due to (A)
This is due to the structure of the epoxy resin. Conventionally, high Tg
Novolac type epoxy resins represented by the general formula are widely used as polyfunctional epoxy resins that are advantageous for chemical conversion [m is a positive integer]. Comparing this structure with the structure of the epoxy resin (A) of the present invention, the epoxy resin of the present invention has a structure in which a glycidoxyphenyl group is further added to the methylene carbon atom in the above formula, so the crosslinking density is becomes higher, and Tg becomes higher. Furthermore, by increasing the average number of benzene nuclei, the molecular weight of the epoxy resin (prepolymer) increases, and it is thought that the Tg after curing becomes even higher.
以下、実施例により本発明を説明するが、本発明の範囲
はこれらの実施例に限定されるものではない。EXAMPLES The present invention will be explained below with reference to Examples, but the scope of the present invention is not limited to these Examples.
実施例１
フェノール−サリチルアルデヒドノボラック樹脂をエポ
キシ化した、エポキシ当量１６０、軟化点８０℃、ベン
ゼン平均積数６．２、加水分解性塩素量３００ｐｐｍの
、代表的な構造式
で示されるエポキシ樹脂（１）８０重量部、エポキシ当
量３７５、軟化点８０℃、臭素含量４０重量％の臭素化
ビスフェノールＡ型エポキシ樹脂２０重量部、水酸基当
量１０６、軟化点８３℃のフェノールホルムアルデヒド
ノボラック樹脂５９重量部、トリフェニルホスフィン１
．５重量部、カルナバワックス２重量部、三酸化アンチ
モン８重量部、カーボンブラック１．５重量部、Ｔ−グ
リシドキシプロピルトリメトキシシラン３重量部、石英
ガラス粉４００重量部を配合し、１０インチ径の加熱ロ
ールを使用して、混練温度８０〜９０℃、混練時間７〜
１０分の条件で混練した。その後、朋来式粉砕機を用い
て粉砕し、エポキシ樹脂成形材料を作成した。Example 1 An epoxy resin represented by a typical structural formula ( 1) 80 parts by weight, 20 parts by weight of brominated bisphenol A epoxy resin with an epoxy equivalent of 375, a softening point of 80°C, and a bromine content of 40% by weight, 59 parts by weight of a phenol formaldehyde novolak resin with a hydroxyl equivalent of 106 and a softening point of 83°C, Phenylphosphine 1
．． 5 parts by weight, carnauba wax 2 parts by weight, antimony trioxide 8 parts by weight, carbon black 1.5 parts by weight, T-glycidoxypropyltrimethoxysilane 3 parts by weight, and quartz glass powder 400 parts by weight. Using a heating roll with a diameter of 80 to 90℃, kneading time to
The mixture was kneaded for 10 minutes. Thereafter, it was crushed using a conventional crusher to create an epoxy resin molding material.
実施例２
オルソクレゾール−サリチルアルデヒドノボラック樹脂
をエポキシ化した、エポキシ当量１７２、軟化点８４℃
、ベンゼン平均積数６．４、加水分解性塩素量２００ｐ
ｐｍの代表的な構造式で示されるエポキシ樹脂（ｎ）を
実施例１のエポキシ樹脂（１）に代えて用い、フェノー
ルホルムアルデヒドノボラック樹脂量を５５重量部に変
えた以外は実施例１と同条件で成形材料を作成した。Example 2 Epoxidized orthocresol-salicylaldehyde novolak resin, epoxy equivalent: 172, softening point: 84°C
, benzene average product number 6.4, hydrolyzable chlorine amount 200p
Same conditions as Example 1 except that epoxy resin (n) represented by the typical structural formula of pm was used in place of epoxy resin (1) in Example 1, and the amount of phenol formaldehyde novolak resin was changed to 55 parts by weight. A molding material was created.
比較例１
エポキシ当ｆｆ１ｌ ８０．軟化点７５℃の代表的な構
造式
で示される従来のフェノールノボラック型エポキシ樹脂
を実施例１のエポキシ樹脂ＣＩ）に代えて使用し、フェ
ノールホルムアルデヒドノボラック樹脂量を５３重量部
に変えた以外は実施例１と同条件で成形材料を作成した
。Comparative Example 1 Epoxy ff1l 80. Except that a conventional phenol novolak type epoxy resin represented by a typical structural formula with a softening point of 75°C was used in place of the epoxy resin CI) of Example 1, and the amount of phenol formaldehyde novolac resin was changed to 53 parts by weight. A molding material was prepared under the same conditions as in Example 1.
比較例２
エポキシ当量２２０、軟化点８０℃の代表的な構造式
で示される従来のクレゾールノボラック型エポキシ樹脂
を実施例１のエポキシ樹脂（１）に代えて使用し、フェ
ノールホルムアルデヒドノボラック樹脂量を４４重量部
に変えた以外は実施例１と同条件で成形材料を作成した
。Comparative Example 2 A conventional cresol novolac type epoxy resin having a typical structural formula with an epoxy equivalent of 220 and a softening point of 80°C was used in place of the epoxy resin (1) of Example 1, and the amount of phenol formaldehyde novolac resin was 44. A molding material was prepared under the same conditions as in Example 1 except that the parts by weight were changed.
表１に上記実施例および比較例の成形材料の特性を示す
。また、上記成形材料を用い、７０ｋｇ／−の圧力下で
１８０℃、９０秒の条件で成形品を作製し、さらに１８
０℃で５時間アフタキュアし、各成形品のＴｇを測定し
た。その結果を表Ｊに示す。Table 1 shows the properties of the molding materials of the above examples and comparative examples. Further, using the above molding material, a molded product was produced under the conditions of 180°C and 90 seconds under a pressure of 70 kg/-, and
After curing was carried out at 0° C. for 5 hours, and the Tg of each molded article was measured. The results are shown in Table J.
以下余白
表１
スパイラルフロー：ＥＭＭＩ １−６６に準じ、金型
温度１８０’Ｃ１圧カフ０ｋｇ／ｃｎｌの条件で測定。Margin Table 1 below Spiral flow: Measured according to EMMI 1-66 under conditions of mold temperature 180'C, pressure cuff 0 kg/cnl.
ゲルタイム： Ｊ ｒ Ｓ−に−５９０９ニ阜し、１８
０”Ｃ１８珠旧０．５ｇで演１定。Gel time: J r S-ni-5909, 18
0” C18 beads old 0.5g for 1 performance.
Ｔｇ ：理学電機製ＴＭＡ装置を用い、成形品の
７ｍ変−線膨張量曲線から、その屈曲点の温度をＴｇと
した。渭淀温度範囲ば室温〜２５０℃。Tg: Using a TMA device manufactured by Rigaku Denki, the temperature at the bending point of the 7 m linear expansion curve of the molded product was determined as Tg. The temperature range is room temperature to 250℃.
この結果、エポキシ樹脂（１）を使用した実施例１と従
来のフェノールノポラフク型エポキシ樹脂を使用した比
較例１を比較すると、実施例１では成形品のＴｇが３０
℃高くなり、また、成形材料の流動性（スパイラルフロ
ー）も十分である。As a result, when comparing Example 1, which used epoxy resin (1), and Comparative Example 1, which used conventional phenol-nopo-fuku type epoxy resin, it was found that in Example 1, the Tg of the molded product was 30.
℃, and the fluidity (spiral flow) of the molding material is also sufficient.
同様に、本発明のエポキシ樹脂（ｎ）を使用した実施例
２と従来のクレゾールノボラック型エポキシ樹脂を使用
した比較例２を比較すると、実施例２では成形品のＴｇ
が４０゛Ｃ高くなり、また成形材料の流動性も十分であ
る。また、ゲルタイムを比較しても、実施例１および２
の成形材料ならびに比較例１および２の成形材料共に同
等である。Similarly, when comparing Example 2 using the epoxy resin (n) of the present invention and Comparative Example 2 using a conventional cresol novolak type epoxy resin, it is found that in Example 2, the Tg of the molded product
The temperature is 40°C higher, and the fluidity of the molding material is also sufficient. Also, even when comparing the gel time, Examples 1 and 2
The molding materials of Comparative Examples 1 and 2 are the same.
このように、本発明で得られる電子部品封止用エポキシ
樹脂成形材料は従来組成の成形材料と比較して格段に高
いＴｇを示し、流動性の低下またはゲルタイムの長期化
をもたらすこともない。As described above, the epoxy resin molding material for electronic component sealing obtained by the present invention exhibits a much higher Tg than molding materials of conventional compositions, and does not cause a decrease in fluidity or a prolonged gel time.
本発明による電子部品封止用エポキシ樹脂成形材料は流
動性およびゲルタイム共に良好であり、この電子部品封
止用エポキシ樹脂成形材料を用いて製作した成形品はＴ
ｇが高く、その結果耐熱性に優れた成形品を得ることが
でき、その工業的価値は大である。The epoxy resin molding material for encapsulating electronic components according to the present invention has good fluidity and gel time, and molded products manufactured using this epoxy resin molding material for encapsulating electronic components have T.
g is high, and as a result, molded products with excellent heat resistance can be obtained, and their industrial value is great.
Claims (1)
との縮合物をエポキシ化して得られるエポキシ樹脂およ
び （Ｂ）１分子中に２個以上のフェノール性水酸基を有す
る化合物 を必須成分として成ることを特徴とする電子部品封止用
エポキシ樹脂成形材料。 ２、（Ａ）のエポキシ樹脂におけるフェノール類とヒド
ロキシベンズアルデヒドから発生するベンゼン核の平均
核数が４核以上１０核以下である特許請求の範囲第１項
記載の電子部品封止用エポキシ樹脂成形材料。 ３、（Ａ）のエポキシ樹脂の加水分解性塩素量が５０ｐ
ｐｍ以下である特許請求の範囲第１項または第２項記載
の電子部品封止用エポキシ樹脂成形材料。[Claims] 1. (A) an epoxy resin obtained by epoxidizing a condensate of phenols and hydroxybenzaldehyde; and (B) a compound having two or more phenolic hydroxyl groups in one molecule as essential components. An epoxy resin molding material for encapsulating electronic components. 2. The epoxy resin molding material for encapsulating electronic components according to claim 1, wherein the average number of benzene nuclei generated from phenols and hydroxybenzaldehyde in the epoxy resin (A) is 4 or more and 10 or less. . 3. The amount of hydrolyzable chlorine in the epoxy resin (A) is 50p
pm or less, the epoxy resin molding material for electronic component sealing according to claim 1 or 2.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13559986A JPS62290720A (en) | 1986-06-11 | 1986-06-11 | Epoxy resin molding material for sealing electronic component |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13559986A JPS62290720A (en) | 1986-06-11 | 1986-06-11 | Epoxy resin molding material for sealing electronic component |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS62290720A true JPS62290720A (en) | 1987-12-17 |
Family
ID=15155585
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP13559986A Pending JPS62290720A (en) | 1986-06-11 | 1986-06-11 | Epoxy resin molding material for sealing electronic component |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS62290720A (en) |
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01268713A (en) * | 1988-04-20 | 1989-10-26 | Sumitomo Bakelite Co Ltd | Epoxy resin composition for sealing semiconductor |
| JPH01275626A (en) * | 1988-04-28 | 1989-11-06 | Sumitomo Bakelite Co Ltd | Epoxy resin composition for semiconductor sealing |
| JPH0232115A (en) * | 1988-07-22 | 1990-02-01 | Sumitomo Bakelite Co Ltd | Epoxy resin composition for sealing semiconductor |
| JPH0280424A (en) * | 1988-09-16 | 1990-03-20 | Toshiba Corp | Epoxy resin composition and resin-sealed semiconductor device |
| JPH0294654A (en) * | 1988-09-30 | 1990-04-05 | Nitto Denko Corp | Semiconductor device |
| EP0372983A2 (en) * | 1988-12-08 | 1990-06-13 | Sumitomo Bakelite Company Limited | Epoxy resin composition for semiconductor sealing |
| JPH02208314A (en) * | 1989-02-07 | 1990-08-17 | Sumitomo Bakelite Co Ltd | Epoxy resin composition |
| JPH039919A (en) * | 1989-06-08 | 1991-01-17 | Shin Etsu Chem Co Ltd | Epoxy resin composition and semiconductor device |
| JPH0324115A (en) * | 1989-06-22 | 1991-02-01 | Nippon Kayaku Co Ltd | Epoxy resin composition |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5626926A (en) * | 1979-08-10 | 1981-03-16 | Toshiba Corp | Epoxy resin molding material for sealing electronic part |
| JPS57141419A (en) * | 1981-02-27 | 1982-09-01 | Mitsubishi Petrochem Co Ltd | Production of polyepoxide |
| JPS57212224A (en) * | 1981-06-24 | 1982-12-27 | Nitto Electric Ind Co Ltd | Epoxy resin composition for encapsulation of semiconductor |
| JPS6142530A (en) * | 1984-08-06 | 1986-03-01 | Sumitomo Bakelite Co Ltd | Epoxy resin composition |
-
1986
- 1986-06-11 JP JP13559986A patent/JPS62290720A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5626926A (en) * | 1979-08-10 | 1981-03-16 | Toshiba Corp | Epoxy resin molding material for sealing electronic part |
| JPS57141419A (en) * | 1981-02-27 | 1982-09-01 | Mitsubishi Petrochem Co Ltd | Production of polyepoxide |
| JPS57212224A (en) * | 1981-06-24 | 1982-12-27 | Nitto Electric Ind Co Ltd | Epoxy resin composition for encapsulation of semiconductor |
| JPS6142530A (en) * | 1984-08-06 | 1986-03-01 | Sumitomo Bakelite Co Ltd | Epoxy resin composition |
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01268713A (en) * | 1988-04-20 | 1989-10-26 | Sumitomo Bakelite Co Ltd | Epoxy resin composition for sealing semiconductor |
| JPH01275626A (en) * | 1988-04-28 | 1989-11-06 | Sumitomo Bakelite Co Ltd | Epoxy resin composition for semiconductor sealing |
| JPH0232115A (en) * | 1988-07-22 | 1990-02-01 | Sumitomo Bakelite Co Ltd | Epoxy resin composition for sealing semiconductor |
| JPH0280424A (en) * | 1988-09-16 | 1990-03-20 | Toshiba Corp | Epoxy resin composition and resin-sealed semiconductor device |
| JPH0294654A (en) * | 1988-09-30 | 1990-04-05 | Nitto Denko Corp | Semiconductor device |
| EP0372983A2 (en) * | 1988-12-08 | 1990-06-13 | Sumitomo Bakelite Company Limited | Epoxy resin composition for semiconductor sealing |
| JPH02208314A (en) * | 1989-02-07 | 1990-08-17 | Sumitomo Bakelite Co Ltd | Epoxy resin composition |
| JPH039919A (en) * | 1989-06-08 | 1991-01-17 | Shin Etsu Chem Co Ltd | Epoxy resin composition and semiconductor device |
| JPH0324115A (en) * | 1989-06-22 | 1991-02-01 | Nippon Kayaku Co Ltd | Epoxy resin composition |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPH04328121A (en) | Epoxy resin composition for sealing semiconductor | |
| JPS62290720A (en) | Epoxy resin molding material for sealing electronic component | |
| JPH10298405A (en) | Epoxy resin composition and cured product composite | |
| JPS62254454A (en) | Semiconductor device | |
| JP2003213081A (en) | Epoxy resin composition and semiconductor device | |
| JPS62254453A (en) | Semiconductor device | |
| JPS6250324A (en) | Epoxy resin molding material for sealing electronic component | |
| JPS62174222A (en) | Epoxy resin molding material for sealing electronic component | |
| JPH0977958A (en) | Epoxy resin composition and semiconductor device | |
| JPH04328117A (en) | Epoxy resin composition for sealing semiconductor | |
| JPH01272620A (en) | Epoxy resin molding material for electronic parts sealing use | |
| JPH04173828A (en) | Epoxy resin molding material for sealing electric part | |
| JPS63178126A (en) | Epoxy resin molding material for sealing electronic component | |
| JPH05217702A (en) | Epoxy resin molding material for sealing electronic part | |
| JPH02166116A (en) | Epoxy resin molding material for sealing electronic component | |
| JPS63130619A (en) | Epoxy resin molding material for sealing electronic component | |
| JPH03221516A (en) | Production of epoxy resin and epoxy resin composition | |
| JPS5918724A (en) | Termosetting resin composition | |
| JPS6335615A (en) | Epoxy resin composition for sealing semiconductor | |
| JPS6395222A (en) | Epoxy resin molding material for sealing electronic part | |
| JPH03212423A (en) | Epoxy resin molding material for sealing electronic part | |
| JPH03106960A (en) | Epoxy resin molding material | |
| JPH07216052A (en) | Epoxy resin and epoxy resin composition | |
| JPH02129220A (en) | Epoxy resin molding material for sealing electronic component and preparation thereof | |
| JPH01108252A (en) | Epoxy resin molding material for sealing electronic component |