JPS6335615A - Epoxy resin composition for sealing semiconductor - Google Patents
Epoxy resin composition for sealing semiconductorInfo
- Publication number
- JPS6335615A JPS6335615A JP17669986A JP17669986A JPS6335615A JP S6335615 A JPS6335615 A JP S6335615A JP 17669986 A JP17669986 A JP 17669986A JP 17669986 A JP17669986 A JP 17669986A JP S6335615 A JPS6335615 A JP S6335615A
- Authority
- JP
- Japan
- Prior art keywords
- epoxy resin
- group
- resin composition
- component
- unsaturated double
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000003822 epoxy resin Substances 0.000 title claims abstract description 49
- 229920000647 polyepoxide Polymers 0.000 title claims abstract description 49
- 239000000203 mixture Substances 0.000 title claims abstract description 19
- 239000004065 semiconductor Substances 0.000 title claims abstract description 14
- 238000007789 sealing Methods 0.000 title abstract 3
- 229920001971 elastomer Polymers 0.000 claims abstract description 16
- 239000005060 rubber Substances 0.000 claims abstract description 16
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 claims abstract description 10
- 239000011256 inorganic filler Substances 0.000 claims abstract description 9
- 229910003475 inorganic filler Inorganic materials 0.000 claims abstract description 9
- 239000005011 phenolic resin Substances 0.000 claims abstract description 8
- KXGFMDJXCMQABM-UHFFFAOYSA-N 2-methoxy-6-methylphenol Chemical compound [CH]OC1=CC=CC([CH])=C1O KXGFMDJXCMQABM-UHFFFAOYSA-N 0.000 claims abstract description 6
- 229920001568 phenolic resin Polymers 0.000 claims abstract description 6
- 229920002857 polybutadiene Polymers 0.000 claims abstract description 6
- 239000005062 Polybutadiene Substances 0.000 claims abstract description 5
- 125000003277 amino group Chemical group 0.000 claims abstract description 3
- 239000011342 resin composition Substances 0.000 claims abstract 2
- 238000005538 encapsulation Methods 0.000 claims description 7
- 229920003006 Polybutadiene acrylonitrile Polymers 0.000 claims description 4
- 125000004435 hydrogen atom Chemical class [H]* 0.000 claims description 4
- OWRCNXZUPFZXOS-UHFFFAOYSA-N 1,3-diphenylguanidine Chemical compound C=1C=CC=CC=1NC(=N)NC1=CC=CC=C1 OWRCNXZUPFZXOS-UHFFFAOYSA-N 0.000 claims description 2
- LYWVNPSVLAFTFX-UHFFFAOYSA-N 4-methylbenzenesulfonate;morpholin-4-ium Chemical compound C1COCCN1.CC1=CC=C(S(O)(=O)=O)C=C1 LYWVNPSVLAFTFX-UHFFFAOYSA-N 0.000 claims description 2
- 125000003545 alkoxy group Chemical group 0.000 claims description 2
- 125000000217 alkyl group Chemical group 0.000 claims description 2
- 125000005843 halogen group Chemical group 0.000 claims description 2
- 239000001257 hydrogen Substances 0.000 claims description 2
- 229910052739 hydrogen Inorganic materials 0.000 claims description 2
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 claims description 2
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 claims description 2
- 239000000376 reactant Substances 0.000 claims description 2
- 239000000126 substance Substances 0.000 claims 1
- 239000003795 chemical substances by application Substances 0.000 abstract description 9
- 229920003986 novolac Polymers 0.000 abstract description 7
- 230000009477 glass transition Effects 0.000 abstract description 6
- 229920005989 resin Polymers 0.000 abstract description 6
- 239000011347 resin Substances 0.000 abstract description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 5
- ULKLGIFJWFIQFF-UHFFFAOYSA-N 5K8XI641G3 Chemical compound CCC1=NC=C(C)N1 ULKLGIFJWFIQFF-UHFFFAOYSA-N 0.000 abstract description 4
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N Phenol Chemical compound OC1=CC=CC=C1 ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 abstract description 4
- 150000001875 compounds Chemical class 0.000 abstract description 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 abstract description 2
- 238000002156 mixing Methods 0.000 abstract description 2
- NLHHRLWOUZZQLW-UHFFFAOYSA-N Acrylonitrile Chemical compound C=CC#N NLHHRLWOUZZQLW-UHFFFAOYSA-N 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- LNEPOXFFQSENCJ-UHFFFAOYSA-N haloperidol Chemical compound C1CC(O)(C=2C=CC(Cl)=CC=2)CCN1CCCC(=O)C1=CC=C(F)C=C1 LNEPOXFFQSENCJ-UHFFFAOYSA-N 0.000 description 6
- -1 1,1,3-tris(glycidyloxyphenyl)butane Chemical compound 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 238000000034 method Methods 0.000 description 5
- 239000012778 molding material Substances 0.000 description 5
- 239000004593 Epoxy Substances 0.000 description 4
- ADCOVFLJGNWWNZ-UHFFFAOYSA-N antimony trioxide Chemical compound O=[Sb]O[Sb]=O ADCOVFLJGNWWNZ-UHFFFAOYSA-N 0.000 description 4
- 230000035882 stress Effects 0.000 description 4
- RIOQSEWOXXDEQQ-UHFFFAOYSA-N triphenylphosphine Chemical compound C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1 RIOQSEWOXXDEQQ-UHFFFAOYSA-N 0.000 description 4
- WSFSSNUMVMOOMR-UHFFFAOYSA-N Formaldehyde Chemical compound O=C WSFSSNUMVMOOMR-UHFFFAOYSA-N 0.000 description 3
- 229920013646 Hycar Polymers 0.000 description 3
- 239000007822 coupling agent Substances 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 125000003700 epoxy group Chemical group 0.000 description 3
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 3
- 150000002989 phenols Chemical class 0.000 description 3
- RNFJDJUURJAICM-UHFFFAOYSA-N 2,2,4,4,6,6-hexaphenoxy-1,3,5-triaza-2$l^{5},4$l^{5},6$l^{5}-triphosphacyclohexa-1,3,5-triene Chemical compound N=1P(OC=2C=CC=CC=2)(OC=2C=CC=CC=2)=NP(OC=2C=CC=CC=2)(OC=2C=CC=CC=2)=NP=1(OC=1C=CC=CC=1)OC1=CC=CC=C1 RNFJDJUURJAICM-UHFFFAOYSA-N 0.000 description 2
- QTWJRLJHJPIABL-UHFFFAOYSA-N 2-methylphenol;3-methylphenol;4-methylphenol Chemical compound CC1=CC=C(O)C=C1.CC1=CC=CC(O)=C1.CC1=CC=CC=C1O QTWJRLJHJPIABL-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- VTYYLEPIZMXCLO-UHFFFAOYSA-L Calcium carbonate Chemical compound [Ca+2].[O-]C([O-])=O VTYYLEPIZMXCLO-UHFFFAOYSA-L 0.000 description 2
- RRHGJUQNOFWUDK-UHFFFAOYSA-N Isoprene Chemical compound CC(=C)C=C RRHGJUQNOFWUDK-UHFFFAOYSA-N 0.000 description 2
- 239000007983 Tris buffer Substances 0.000 description 2
- LJCFOYOSGPHIOO-UHFFFAOYSA-N antimony pentoxide Chemical compound O=[Sb](=O)O[Sb](=O)=O LJCFOYOSGPHIOO-UHFFFAOYSA-N 0.000 description 2
- IISBACLAFKSPIT-UHFFFAOYSA-N bisphenol A Chemical compound C=1C=C(O)C=CC=1C(C)(C)C1=CC=C(O)C=C1 IISBACLAFKSPIT-UHFFFAOYSA-N 0.000 description 2
- 239000001273 butane Substances 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 229930003836 cresol Natural products 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000003063 flame retardant Substances 0.000 description 2
- 239000005350 fused silica glass Substances 0.000 description 2
- RLSSMJSEOOYNOY-UHFFFAOYSA-N m-cresol Chemical compound CC1=CC=CC(O)=C1 RLSSMJSEOOYNOY-UHFFFAOYSA-N 0.000 description 2
- IJDNQMDRQITEOD-UHFFFAOYSA-N n-butane Chemical compound CCCC IJDNQMDRQITEOD-UHFFFAOYSA-N 0.000 description 2
- OFBQJSOFQDEBGM-UHFFFAOYSA-N n-pentane Natural products CCCCC OFBQJSOFQDEBGM-UHFFFAOYSA-N 0.000 description 2
- IXQGCWUGDFDQMF-UHFFFAOYSA-N o-Hydroxyethylbenzene Natural products CCC1=CC=CC=C1O IXQGCWUGDFDQMF-UHFFFAOYSA-N 0.000 description 2
- IWDCLRJOBJJRNH-UHFFFAOYSA-N p-cresol Chemical compound CC1=CC=C(O)C=C1 IWDCLRJOBJJRNH-UHFFFAOYSA-N 0.000 description 2
- 229920000642 polymer Polymers 0.000 description 2
- 241000894007 species Species 0.000 description 2
- BPSIOYPQMFLKFR-UHFFFAOYSA-N trimethoxy-[3-(oxiran-2-ylmethoxy)propyl]silane Chemical compound CO[Si](OC)(OC)CCCOCC1CO1 BPSIOYPQMFLKFR-UHFFFAOYSA-N 0.000 description 2
- 239000001993 wax Substances 0.000 description 2
- FUIQBJHUESBZNU-UHFFFAOYSA-N 2-[(dimethylazaniumyl)methyl]phenolate Chemical compound CN(C)CC1=CC=CC=C1O FUIQBJHUESBZNU-UHFFFAOYSA-N 0.000 description 1
- AOBIOSPNXBMOAT-UHFFFAOYSA-N 2-[2-(oxiran-2-ylmethoxy)ethoxymethyl]oxirane Chemical compound C1OC1COCCOCC1CO1 AOBIOSPNXBMOAT-UHFFFAOYSA-N 0.000 description 1
- LXBGSDVWAMZHDD-UHFFFAOYSA-N 2-methyl-1h-imidazole Chemical compound CC1=NC=CN1 LXBGSDVWAMZHDD-UHFFFAOYSA-N 0.000 description 1
- ZCUJYXPAKHMBAZ-UHFFFAOYSA-N 2-phenyl-1h-imidazole Chemical compound C1=CNC(C=2C=CC=CC=2)=N1 ZCUJYXPAKHMBAZ-UHFFFAOYSA-N 0.000 description 1
- LLEASVZEQBICSN-UHFFFAOYSA-N 2-undecyl-1h-imidazole Chemical compound CCCCCCCCCCCC1=NC=CN1 LLEASVZEQBICSN-UHFFFAOYSA-N 0.000 description 1
- NFVPEIKDMMISQO-UHFFFAOYSA-N 4-[(dimethylamino)methyl]phenol Chemical compound CN(C)CC1=CC=C(O)C=C1 NFVPEIKDMMISQO-UHFFFAOYSA-N 0.000 description 1
- ISAVYTVYFVQUDY-UHFFFAOYSA-N 4-tert-Octylphenol Chemical compound CC(C)(C)CC(C)(C)C1=CC=C(O)C=C1 ISAVYTVYFVQUDY-UHFFFAOYSA-N 0.000 description 1
- QHPQWRBYOIRBIT-UHFFFAOYSA-N 4-tert-butylphenol Chemical compound CC(C)(C)C1=CC=C(O)C=C1 QHPQWRBYOIRBIT-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 229920000459 Nitrile rubber Polymers 0.000 description 1
- IGFHQQFPSIBGKE-UHFFFAOYSA-N Nonylphenol Natural products CCCCCCCCCC1=CC=C(O)C=C1 IGFHQQFPSIBGKE-UHFFFAOYSA-N 0.000 description 1
- 239000006087 Silane Coupling Agent Substances 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- VLLYOYVKQDKAHN-UHFFFAOYSA-N buta-1,3-diene;2-methylbuta-1,3-diene Chemical compound C=CC=C.CC(=C)C=C VLLYOYVKQDKAHN-UHFFFAOYSA-N 0.000 description 1
- NTXGQCSETZTARF-UHFFFAOYSA-N buta-1,3-diene;prop-2-enenitrile Chemical compound C=CC=C.C=CC#N NTXGQCSETZTARF-UHFFFAOYSA-N 0.000 description 1
- 229910000019 calcium carbonate Inorganic materials 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000006229 carbon black Substances 0.000 description 1
- 239000004203 carnauba wax Substances 0.000 description 1
- 235000013869 carnauba wax Nutrition 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 229920001577 copolymer Polymers 0.000 description 1
- 229910002026 crystalline silica Inorganic materials 0.000 description 1
- 235000014113 dietary fatty acids Nutrition 0.000 description 1
- XXBDWLFCJWSEKW-UHFFFAOYSA-N dimethylbenzylamine Chemical compound CN(C)CC1=CC=CC=C1 XXBDWLFCJWSEKW-UHFFFAOYSA-N 0.000 description 1
- 150000002085 enols Chemical class 0.000 description 1
- 239000000194 fatty acid Substances 0.000 description 1
- 229930195729 fatty acid Natural products 0.000 description 1
- 150000004665 fatty acids Chemical class 0.000 description 1
- 239000000945 filler Substances 0.000 description 1
- 238000009472 formulation Methods 0.000 description 1
- 125000000524 functional group Chemical group 0.000 description 1
- 150000002460 imidazoles Chemical class 0.000 description 1
- 239000000395 magnesium oxide Substances 0.000 description 1
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 1
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 1
- 229910052751 metal Chemical class 0.000 description 1
- 239000002184 metal Chemical class 0.000 description 1
- UJNZOIKQAUQOCN-UHFFFAOYSA-N methyl(diphenyl)phosphane Chemical compound C=1C=CC=CC=1P(C)C1=CC=CC=C1 UJNZOIKQAUQOCN-UHFFFAOYSA-N 0.000 description 1
- 239000006082 mold release agent Substances 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- SNQQPOLDUKLAAF-UHFFFAOYSA-N nonylphenol Chemical compound CCCCCCCCCC1=CC=CC=C1O SNQQPOLDUKLAAF-UHFFFAOYSA-N 0.000 description 1
- 150000003003 phosphines Chemical class 0.000 description 1
- 239000000049 pigment Substances 0.000 description 1
- 229920002587 poly(1,3-butadiene) polymer Polymers 0.000 description 1
- 229920001451 polypropylene glycol Polymers 0.000 description 1
- 125000002924 primary amino group Chemical group [H]N([H])* 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 239000003566 sealing material Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- 150000003512 tertiary amines Chemical class 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 238000001721 transfer moulding Methods 0.000 description 1
- TUQOTMZNTHZOKS-UHFFFAOYSA-N tributylphosphine Chemical compound CCCCP(CCCC)CCCC TUQOTMZNTHZOKS-UHFFFAOYSA-N 0.000 description 1
- WLPUWLXVBWGYMZ-UHFFFAOYSA-N tricyclohexylphosphine Chemical compound C1CCCCC1P(C1CCCCC1)C1CCCCC1 WLPUWLXVBWGYMZ-UHFFFAOYSA-N 0.000 description 1
- 150000003739 xylenols Chemical class 0.000 description 1
Landscapes
- Compositions Of Macromolecular Compounds (AREA)
- Epoxy Resins (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
Abstract
Description
【発明の詳細な説明】
［技術分野］
本発明は憬れた耐熱性と低弾性率を有する硬化物を得る
ことが可能な半導体封止用エポキシ樹脂組成物に関する
。DETAILED DESCRIPTION OF THE INVENTION [Technical Field] The present invention relates to an epoxy resin composition for semiconductor encapsulation, which makes it possible to obtain a cured product having excellent heat resistance and low elastic modulus.
［従来技術とその問題点］
従来、半導体素子の樹脂封止材料としてエポキシ樹脂組
成物が実用化されており、素子は主としてトランスファ
ー成形で直接卦止が行なわれている。この場合、インサ
ート物と樹脂との線膨張率の差や熱応力によって素子の
歪や破損を生じたり、ボンディング線が切断されるなど
の問題があり、素子への応力を小さくすることが望まれ
ている。[Prior Art and its Problems] Epoxy resin compositions have heretofore been put to practical use as resin sealing materials for semiconductor devices, and devices are mainly directly sealed by transfer molding. In this case, there are problems such as the element being distorted or damaged due to the difference in linear expansion coefficient between the insert and the resin and thermal stress, or the bonding wire being cut, so it is desirable to reduce the stress on the element. ing.
特に近年、半導体素子の大型化、高集積化に伴ってその
要求はますます強くなっている。応力を小さくするため
に硬化物の弾性率や膨張率を低くするように材料の工夫
がなされている。Particularly in recent years, as semiconductor devices have become larger and more highly integrated, the demand has become stronger. In order to reduce stress, materials are being devised to lower the elastic modulus and expansion coefficient of cured products.
すなわち、低応力化の一方法として可撓性付与剤を配合
する方法が知られている。しかし、従来知られているポ
リプロピレングリコールジグリシジルエーテルや長い側
鎖を有するビスフェノールＡ型エポキシ樹脂などの可撓
性付与剤を配合した場合には、低弾性率化効果は認めら
れるものの、ガラス転移点（Ｔｇ）が急激に降下し、高
温時の電気特性が低下するという問題点を有している。That is, a method of blending a flexibility imparting agent is known as one method for reducing stress. However, when a flexibility imparting agent such as conventionally known polypropylene glycol diglycidyl ether or bisphenol A type epoxy resin having a long side chain is blended, although the effect of lowering the elastic modulus is observed, the glass transition point It has the problem that (Tg) drops rapidly and the electrical properties at high temperatures deteriorate.
また、クレゾールノボラック型エポキシ樹脂を不飽和二
重結合を有するゴムで変性した場合もりｉ性率は低下す
るが、ガラス転移点もかなり低下する（特開昭５８−１
７４４１６．特開昭６Ｏ−８３１５）。Furthermore, when a cresol novolac type epoxy resin is modified with a rubber having unsaturated double bonds, the i property is lowered, but the glass transition point is also considerably lowered (JP-A-58-1
74416. Japanese Patent Application Publication No. 6O-8315).
材料の熱膨張係数を下げる方法としては熱１膨張 。Thermal expansion is a method to lower the coefficient of thermal expansion of a material.
係数の小さい無機充填材の添加が知られているが、無機
充填材の添加量を多くすると膨張係数の低下と同時に弾
性率が増加するので応力の十分なる低減は計られていな
い。Although it is known to add an inorganic filler with a small coefficient, increasing the amount of the inorganic filler added causes a decrease in the expansion coefficient and an increase in the elastic modulus, so a sufficient reduction in stress has not been attempted.
［発明の目的］
本発明は高いガラス転移点を有し、かつ低弾性率で可撓
性のある半導体封止用エポキシ樹脂組成物を提供するこ
とにある。[Object of the Invention] An object of the present invention is to provide an epoxy resin composition for semiconductor encapsulation that has a high glass transition point, a low elastic modulus, and is flexible.
［発明の概要］
上記目的を達成すべく鋭意検討した結果ａ）三官能エポ
キシ樹脂
ｂ）フェノール樹脂硬化剤
Ｃ）硬化促進剤
ｄ）無機質フィラー
ｅ）分子骨格に不飽和二重結合を有するゴムを含むこと
を特徴とする半導体刃出用エポキシ樹脂組成物である。[Summary of the invention] As a result of intensive studies to achieve the above object, a) trifunctional epoxy resin b) phenol resin curing agent C) curing accelerator d) inorganic filler e) Rubber having unsaturated double bonds in its molecular skeleton was developed. 1 is an epoxy resin composition for semiconductor blade cutting, characterized by comprising:
本発明において、三官能エポキシ樹脂としては次の式で
示される化合物である。In the present invention, the trifunctional epoxy resin is a compound represented by the following formula.
ｔ３
式中、Ｒ１は水素、メチル基またはフェニル基、Ｒ２と
Ｒ３は水素原子、アルキル基、アルコキシル基またはハ
ロゲン原子からなる群より選ばれた同一もしく４±異な
る基である三官能エポキシ樹脂。t3 A trifunctional epoxy resin in which R1 is hydrogen, a methyl group, or a phenyl group, and R2 and R3 are the same or 4± different groups selected from the group consisting of a hydrogen atom, an alkyl group, an alkoxyl group, or a halogen atom.
例えば、一般式（Ｉ）で表わされる１、１．３−トリス
（グリシジルオキシフェニル）ブタン。For example, 1,1,3-tris(glycidyloxyphenyl)butane represented by general formula (I).
一般式（ｎ）で表わされる１、１．３−トリス（グリシ
ジルオキシフェニル）３−フェニルプロパン、一般式（
ｍ）で表わされる１、１．３−トリス（４−グリシジル
オキシ−３，５−ジメチ）ブタン、一般式（ｒＶ）で表
わされるｉ、１．３−トリス（４−グリシジルオキシ−
３，５−ジメチルフェニル）ブタンなどが挙げられる。1,1,3-tris(glycidyloxyphenyl)3-phenylpropane represented by general formula (n), general formula (
1,1,3-tris(4-glycidyloxy-3,5-dimethy)butane represented by m), i,1,3-tris(4-glycidyloxy-
Examples include 3,5-dimethylphenyl)butane.
（Ｉ）
（ａ）
Ｈ３
（ＩＶ）
ａ）エポキシ樹脂としては３官能エポキシ樹脂、および
この樹脂とＯ−クレゾールノボラック型エポキシ樹脂、
フェノールノボラック型エポキシ樹脂、ハロゲン化フェ
ノールノボラック型エポキシ樹脂から選ばれた１種また
は２種以上のエポキシ樹脂と一緒に用いることができる
。この際、三官能エポキシ樹脂は全エポキシ樹脂１００
重量部に対して１０〜１００重量部、特に３０〜１００
重量部が好ましい、なお、全エポキシ樹脂にはゴム変性
エポキシ樹脂中のエポキシ樹脂成分も含まれる。(I) (a) H3 (IV) a) The epoxy resin is a trifunctional epoxy resin, and this resin and an O-cresol novolak type epoxy resin,
It can be used together with one or more epoxy resins selected from phenol novolac type epoxy resins and halogenated phenol novolac type epoxy resins. At this time, the trifunctional epoxy resin has a total epoxy resin of 100%
10 to 100 parts by weight, especially 30 to 100 parts by weight
Parts by weight are preferred, and the total epoxy resin also includes the epoxy resin component in the rubber-modified epoxy resin.
ｂ）フェノール樹脂硬化剤としては、フェノール、０−
クレゾール、ｍ−クレゾール、ｐ−クレゾール、エチル
フェノール、キシレノール類、ｐ−ｔｅｒｔ−ブチルフ
ェノール、オクチルフェノール、ノニルフェノール等の
アルキル置換フェノール類より選ばれた少なくとも１種
類のフェノール化合物とホルムアルデヒドと反応せしめ
た樹脂等が挙げられる。b) As the phenolic resin curing agent, phenol, 0-
A resin etc. made by reacting formaldehyde with at least one type of phenol compound selected from alkyl-substituted phenols such as cresol, m-cresol, p-cresol, ethylphenol, xylenols, p-tert-butylphenol, octylphenol, and nonylphenol. Can be mentioned.
Ｃ）硬化促進剤としては、２−エチル−４−メチルイミ
ダゾール、２−メチルイミダゾール、２−フェニルイミ
ダゾール、２−ウンデシルイミダゾール等のイミダゾー
ル類、２−（ジメチルアミノメチル）フェノール、２．
４．６−）リス（ジメチルアミノメチル）フェノール、
ベンジルジメチルアミン等の第３級アミン、トリフェニ
ルホスフィン、トリブチルホスフィン、メチルジフェニ
ルホスフィン、トリシクロヘキシルホスフィン等の有機
ホスフィン類が挙げられる。これらの群より選ばれた１
種または２種以上のものが使用される。C) As a curing accelerator, imidazoles such as 2-ethyl-4-methylimidazole, 2-methylimidazole, 2-phenylimidazole, and 2-undecylimidazole, 2-(dimethylaminomethyl)phenol, 2.
4.6-) lis(dimethylaminomethyl)phenol,
Examples include tertiary amines such as benzyldimethylamine, and organic phosphines such as triphenylphosphine, tributylphosphine, methyldiphenylphosphine, and tricyclohexylphosphine. 1 selected from these groups
A species or two or more species may be used.
ｄ）無機質フィラーとしては、溶融シリカ、結晶性シリ
カ、酸化マグネシウム、アルミナ、炭酸カルシウム等が
挙げられる。d) Examples of inorganic fillers include fused silica, crystalline silica, magnesium oxide, alumina, and calcium carbonate.
ｅ）分子骨格に不飽和二重結合を有するゴム成分として
は、ブタジェン重合体、ブタジェン−アクリロニトリル
共重合体、ブタジェン−スチレン共重合体、イソプレン
重合体、ブタジェン−イソプレン重合体、さらに、これ
らの化合物の分子内部または末端にカルボキシル基、ヒ
ドロキシル基、アミ／１＆、エポキシ基のような官能基
を有するものであり、特にカルボキシル基、°アミノ基
。e) Rubber components having unsaturated double bonds in their molecular skeletons include butadiene polymers, butadiene-acrylonitrile copolymers, butadiene-styrene copolymers, isoprene polymers, butadiene-isoprene polymers, and compounds thereof. It has a functional group such as carboxyl group, hydroxyl group, amino/1&, epoxy group inside or at the end of the molecule, especially carboxyl group, °amino group.
エポキシ基から選ばれる少なくとも一つの基を有するポ
リブタジェン、ポリブタジェン−アクリロニトリル共重
合体ゴム等が有効である。Polybutadiene, polybutadiene-acrylonitrile copolymer rubber, etc. having at least one group selected from epoxy groups are effective.
また、分子骨格に不飽和二重結合を有するゴム成分の添
加方法としては、特に制限はないが、エポキシ樹脂類に
溶融混合物として添加する方法、エポキシ樹脂類との反
応物であるゴム変性エポキシ樹脂として添加する方法が
好ましい。There are no particular restrictions on the method of adding the rubber component having an unsaturated double bond in its molecular skeleton, but methods include adding it to epoxy resins as a molten mixture, and rubber-modified epoxy resins that are reactants with epoxy resins. It is preferable to add it as
なお、エポキシ樹脂とフェノール樹脂硬化剤の組合せで
は、エポキシ樹脂中に含まれるエポキシ基１個当たりフ
ェノール性水酸基が０．５〜２．０個となるような比率
で用いるのが好ましい。In addition, in the combination of an epoxy resin and a phenolic resin curing agent, it is preferable to use them in a ratio such that the number of phenolic hydroxyl groups is 0.5 to 2.0 per epoxy group contained in the epoxy resin.
硬化促進剤の添加量は成形材料中に０．１〜１．０量％
が好ましい。The amount of curing accelerator added is 0.1 to 1.0% by weight in the molding material.
is preferred.
無機フィラーの添加量は全組成物に対して６０〜８５重
量％が望ましく、８５重量％以上になると組成物の流動
性が低く、成形性が悪くなる。また６０重量％以下では
線１１１張率が大きくなるなどの問題が生じる。したが
って、無機質フィラーの種類により異なるが、６０〜８
５重量％の範囲で適宜配合される。The amount of the inorganic filler added is preferably 60 to 85% by weight based on the total composition, and if it exceeds 85% by weight, the fluidity of the composition will be low and the moldability will be poor. Moreover, if it is less than 60% by weight, problems such as an increase in the elongation of the wire 111 occur. Therefore, although it varies depending on the type of inorganic filler, 60 to 8
It is suitably blended in a range of 5% by weight.
分子骨格に不飽和二重結合を有するゴムの添加量は、（
全エポキシ樹脂＋フェノール樹脂硬化剤）１００重量部
に対して３〜５０重量部、好ましくは５〜４Ｏｆｉ量部
である。すなわち３ｆｆｉ量部以下では弾性率の低下が
少なく、５０重量部以上ではＴｇ、機械的強度および高
温時電気特性の低下が大きい。The amount of rubber that has unsaturated double bonds in its molecular skeleton is (
The amount is 3 to 50 parts by weight, preferably 5 to 4 parts by weight, based on 100 parts by weight of the total epoxy resin + phenolic resin curing agent. That is, when the amount is less than 3 ffi parts, the elastic modulus decreases little, and when it is 50 parts by weight or more, the Tg, mechanical strength, and electrical properties at high temperatures decrease greatly.
また、本発明においては、ａ）〜８）のほかに必要に応
じて天然ワックス、合成ワックス、高級脂肪酸およびそ
の金属塩などの離型剤、シラン系カップリング剤やチタ
ン系カップリング剤などのカップリング剤、カーボンの
ような着色剤、ざらに三酸化アンチモン、五酸化アンチ
モンなどの難燃助剤を添加することもできる。In the present invention, in addition to a) to 8), release agents such as natural waxes, synthetic waxes, higher fatty acids and metal salts thereof, silane coupling agents, titanium coupling agents, etc. may be used as necessary. Coupling agents, coloring agents such as carbon, and flame retardant aids such as antimony trioxide and antimony pentoxide may also be added.
また本発明においては、成分ａ）〜ｅ）およびその他の
成分を配合し、ヘンシェルミキサーなどで混合して、ロ
ール、ニーダ−等により７０〜１１０″Ｃで混練するこ
とにより、目的とする優れた特性の成形材料を得ること
ができる。In addition, in the present invention, components a) to e) and other components are blended, mixed in a Henschel mixer, etc., and kneaded at 70 to 110"C with a roll, kneader, etc., to achieve the desired excellent A molding material with special characteristics can be obtained.
［発明の効果］
従来の半導体封止用エポキシ樹脂組成物は、その曲げ弾
性率を低くして可撓性を出すと、ガラス転位点の低下が
激しい、しかし１本発明の組成物を使用すると、曲げ弾
性率は同程度で可撓性があり、かつ、ガラス転位温度が
１７５〜１８２℃と高い、高温時の電気特性の良い半導
体刃出材が得られる。[Effects of the Invention] When conventional epoxy resin compositions for semiconductor encapsulation are made flexible by lowering their flexural modulus, the glass transition point is drastically lowered, but when the composition of the present invention is used, It is possible to obtain a semiconductor blade material which is flexible with a similar bending modulus, has a glass transition temperature as high as 175 to 182°C, and has good electrical properties at high temperatures.
［発明の実施例］
以下に実施例および比較例に使用する材料を示す、また
配合を表−１に示す。[Examples of the Invention] The materials used in Examples and Comparative Examples are shown below, and the formulations are shown in Table 1.
（１）エポキシ樹脂：
３官能性エポキシ樹脂〔工〕 （エポキシ当１１９５、
軟化点６４℃）
３官能性エポキシ樹脂（ＩＩ）（エポキシ当量２２０、
軟化点７２℃）
臭素化フェノールノボラック型エポキシ樹脂（日本化某
社ＢＲＥＷ−９、エポキシ当量２７５）（２）フェノー
ル樹脂硬化剤＝７エノールノポラツク型樹脂（水酸基当
量１０Ｂ）
（３）硬化促進剤：２−エチル−４−メチルイミダゾー
ル
（４）ゴム：
Ａ：末端カルボキシル含有ポリブタジェンゴムＨｙｃａ
ｒ ＣＴＢ ２０００Ｘ １Ｂ２ （宇部興産社製。(1) Epoxy resin: Trifunctional epoxy resin (Epoxy resin 1195,
Softening point: 64°C) Trifunctional epoxy resin (II) (epoxy equivalent: 220,
Softening point: 72°C) Brominated phenol novolac type epoxy resin (Nippon Kaisha BREW-9, epoxy equivalent: 275) (2) Phenol resin curing agent = 7 enol novolac type resin (hydroxyl equivalent: 10B) (3) Curing accelerator: 2-ethyl-4-methylimidazole (4) rubber: A: terminal carboxyl-containing polybutadiene rubber Hyca
r CTB 2000X 1B2 (manufactured by Ube Industries, Ltd.)
分子ｒＪＬ４８００ 、 力Ａｔポキシル基当量２４０
０ ）Ｂ：末端カルボキシル含有ポリブタジェン−アク
リロニトリルゴムＨｙｃａｒ ＣＴＢＮ １３００Ｘ
８（宇部興産社製９分子量３５０Ｇ 、カルボキシル基
当Ｍ２１４０ 、ＡＮ１７％）
（５）離型剤：カルナバワックス
ゴム変性エポキシ樹脂０合ｒ＆
攪拌機付きの４フロフラスコに表１に示した配合でエポ
キシ樹脂、末端カルボキシル基含有ポリブタジェン、末
端カルボキシル基含有ポリブタジェン−アクリロニトリ
ル共重合ゴム及びトリフェニルホスフィンを加えて、窒
素気流中１５０−１６０℃で撹拌しながら１時間反応さ
せて、ゴム変性エポキシ樹脂を得た。Molecule rJL4800, force At poxyl group equivalent 240
0) B: Terminal carboxyl-containing polybutadiene-acrylonitrile rubber Hycar CTBN 1300X
8 (manufactured by Ube Industries, Ltd. 9, molecular weight 350G, carboxyl group weight M2140, AN 17%) (5) Mold release agent: carnauba wax rubber modified epoxy resin 0 mix epoxy resin with the composition shown in Table 1 in a 4-flow flask equipped with a stirrer, A terminal carboxyl group-containing polybutadiene, a terminal carboxyl group-containing polybutadiene-acrylonitrile copolymer rubber, and triphenylphosphine were added and reacted for 1 hour with stirring at 150-160° C. in a nitrogen stream to obtain a rubber-modified epoxy resin.
なお、エポキシ樹脂としては、３官能性エポキシ樹脂〔
工〕 （エポキシ当ｊｌ１９５．軟化点６４℃）、３官
能性エポキシ樹脂（ＩＩ）（エポキシ当ｆｆ１２２０．
軟化点７２℃）、クレゾールノボラック型エポキシ樹脂
（エポキシ当［２１９，軟化点７８°Ｃ）を、末端カル
ボキシル基含有ポリブタジェンとしてＨｙｃａｒ ＣＴ
ＢＮ ２０００Ｘ １Ｇ２ （宇部興産社製１分子量４
８００ 、カルボキシル基当Ｊｉｉ ２４００ ）と
末端カルボキシル含有ポリブタジェン−７クリロニトリ
ルゴムとしテＨｙｃａｒ ＣＴＢＮ １３００Ｘ ８
（宇部興産社製１分子量３５００ 、カルボキシル基当
量２１４０、 ＡＮ １７％）を用いた。In addition, as the epoxy resin, trifunctional epoxy resin [
(Jl 195 per epoxy. Softening point 64°C), trifunctional epoxy resin (II) (FF 1220 per epoxy.
Hycar CT
BN 2000X 1G2 (manufactured by Ube Industries, Ltd. 1 molecular weight 4
Hycar CTBN 1300
(manufactured by Ube Industries, Ltd., molecular weight 3500, carboxyl group equivalent weight 2140, AN 17%) was used.
（６）カップリング剤：γ−グリシドキシプロビルトリ
メトキシシラン（信越化学社製ＫＢＭ ４０３）（７）
充填剤：溶融シリカ（竜森社製 ヒユーズレックスＲＤ
−８）
（８）その他：難燃剤として三酸化アンチモン。(6) Coupling agent: γ-glycidoxypropyltrimethoxysilane (KBM 403 manufactured by Shin-Etsu Chemical Co., Ltd.) (7)
Filler: Fused silica (Fuzurex RD manufactured by Ryumorisha)
-8) (8) Others: Antimony trioxide as a flame retardant.
顔料としてカーボンブラックを４：ｌの重量比にブレン
ドしたものを使用した。A blend of carbon black in a weight ratio of 4:1 was used as a pigment.
実施例１〜Ｂ、比較例１〜２
表−２に示す材料を混合し、加熱ロールにより混練、冷
却後粉砕してエポキシ樹脂成形材料を調整した。これら
の成形材料を、１７５℃×３分の成形条件で試験片を作
成し、１７５℃×６時間後硬化をした後、緒特性を評価
した。この結果を表−３に示した。Examples 1 to B, Comparative Examples 1 to 2 The materials shown in Table 2 were mixed, kneaded with heated rolls, cooled, and crushed to prepare epoxy resin molding materials. Test pieces were prepared from these molding materials under molding conditions of 175°C for 3 minutes, and after curing at 175°C for 6 hours, the properties of the molding materials were evaluated. The results are shown in Table-3.
表−１ 数字は重量（％）を示す。Table-1 Numbers indicate weight (%).
表−２（数字は重量％を示す） 表−３Table-2 (numbers indicate weight%) Table-3
Claims (4)
ことを特徴とする半導体封止用エポキシ樹脂組成物。(1) a) trifunctional epoxy resin b) phenolic resin curing agent c) curing accelerator d) inorganic filler e) semiconductor encapsulation characterized by containing a rubber component having an unsaturated double bond in its molecular skeleton Epoxy resin composition.
される特許請求の範囲第１項記載の半導体封止用樹脂組
成物。 ▲数式、化学式、表等があります▼ 式中、Ｒ＿１は水素、メチル基またはフェニル基、Ｒ＿
２とＲ＿３は水素原子、アルキル基、アルコキシル基ま
たはハロゲン原子からなる群より選ばれた同一もしくは
異なる基である三官能エポキシ樹脂。(2) The resin composition for semiconductor encapsulation according to claim 1, wherein the trifunctional epoxy resin of component a) is represented by the following formula. ▲There are mathematical formulas, chemical formulas, tables, etc.▼ In the formula, R_1 is hydrogen, methyl group or phenyl group, R_
A trifunctional epoxy resin in which 2 and R_3 are the same or different groups selected from the group consisting of a hydrogen atom, an alkyl group, an alkoxyl group, or a halogen atom.
るゴム成分がカルボキシル基、アミン基から選ばれる少
なくとも一つの基を有するポリブタジエンおよび／また
はポリブタジエンアクリロニトリルである特許請求の範
囲第１項記載の半導体封止用エポキシ樹脂組成物。(3) Claim 1, wherein the rubber component having an unsaturated double bond in the molecular skeleton of component e) is polybutadiene and/or polybutadiene acrylonitrile having at least one group selected from a carboxyl group and an amine group. The epoxy resin composition for semiconductor encapsulation described above.
るゴム成分が分子骨格に不飽和二重結合を有するゴム成
分と三官能エポキシ樹脂の溶融混合物または反応物を用
いる特許請求の範囲第１項記載の半導体封止用エポキシ
樹脂組成物。(4) A claim in which the rubber component having an unsaturated double bond in the molecular skeleton of component e) is a molten mixture or a reactant of a rubber component having an unsaturated double bond in the molecular skeleton and a trifunctional epoxy resin. The epoxy resin composition for semiconductor encapsulation according to item 1.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17669986A JPS6335615A (en) | 1986-07-29 | 1986-07-29 | Epoxy resin composition for sealing semiconductor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17669986A JPS6335615A (en) | 1986-07-29 | 1986-07-29 | Epoxy resin composition for sealing semiconductor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6335615A true JPS6335615A (en) | 1988-02-16 |
Family
ID=16018194
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP17669986A Pending JPS6335615A (en) | 1986-07-29 | 1986-07-29 | Epoxy resin composition for sealing semiconductor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6335615A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007009180A (en) * | 2005-05-31 | 2007-01-18 | Sumitomo Bakelite Co Ltd | Epoxy resin composition and semiconductor device |
| JP2007224219A (en) * | 2006-02-24 | 2007-09-06 | Sumitomo Bakelite Co Ltd | Epoxy resin composition for sealing semiconductor and semiconductor device |
| JP2007231128A (en) * | 2006-02-28 | 2007-09-13 | Sumitomo Bakelite Co Ltd | Epoxy resin composition and semiconductor device |
| JP2008013718A (en) * | 2006-07-10 | 2008-01-24 | Nippon Kayaku Co Ltd | Epoxy resin, method for producing the same and application thereof |
-
1986
- 1986-07-29 JP JP17669986A patent/JPS6335615A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007009180A (en) * | 2005-05-31 | 2007-01-18 | Sumitomo Bakelite Co Ltd | Epoxy resin composition and semiconductor device |
| JP2007224219A (en) * | 2006-02-24 | 2007-09-06 | Sumitomo Bakelite Co Ltd | Epoxy resin composition for sealing semiconductor and semiconductor device |
| JP2007231128A (en) * | 2006-02-28 | 2007-09-13 | Sumitomo Bakelite Co Ltd | Epoxy resin composition and semiconductor device |
| JP2008013718A (en) * | 2006-07-10 | 2008-01-24 | Nippon Kayaku Co Ltd | Epoxy resin, method for producing the same and application thereof |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US7338993B2 (en) | Flame-retardant molding compositions | |
| US5476884A (en) | Semiconductor device-encapsulating epoxy resin composition containing secondary amino functional coupling agents | |
| JPS60206824A (en) | Epoxy resin composition for sealing semiconductor | |
| JPS608315A (en) | Epoxy resin molding material for sealing semiconductor | |
| JP2003213081A (en) | Epoxy resin composition and semiconductor device | |
| JPS62254453A (en) | Semiconductor device | |
| JPS6335615A (en) | Epoxy resin composition for sealing semiconductor | |
| JPS58174416A (en) | Epoxy resin composition for sealing of semiconductor | |
| JP2938174B2 (en) | Resin composition | |
| JPS63275626A (en) | Epoxy resin composition | |
| JPH06256364A (en) | Organic silicon compound, its production and resin composition containing the same | |
| JP3274265B2 (en) | Epoxy resin composition | |
| JP2823636B2 (en) | High heat resistant epoxy resin composition | |
| JPH04328117A (en) | Epoxy resin composition for sealing semiconductor | |
| JP2552343B2 (en) | Epoxy resin composition | |
| JPH06841B2 (en) | Epoxy resin molding material for electronic parts encapsulation | |
| JP2551828B2 (en) | Epoxy resin composition for semiconductor encapsulation | |
| JPH02166116A (en) | Epoxy resin molding material for sealing electronic component | |
| EP0459591A2 (en) | Epoxy resin composition | |
| JPS63275625A (en) | Epoxy resin composition for semiconductor sealing | |
| JP2938158B2 (en) | Epoxy resin composition for semiconductor encapsulation | |
| JPH03237126A (en) | Highly heat-resistant epoxy resin composition | |
| JP3517961B2 (en) | Epoxy resin composition and semiconductor encapsulating material | |
| JP2559625B2 (en) | Epoxy resin composition | |
| JP3056634B2 (en) | Epoxy resin composition for semiconductor encapsulation |