JPS6333412A - Epoxy resin composition and semiconductor device - Google Patents
Epoxy resin composition and semiconductor deviceInfo
- Publication number
- JPS6333412A JPS6333412A JP17563186A JP17563186A JPS6333412A JP S6333412 A JPS6333412 A JP S6333412A JP 17563186 A JP17563186 A JP 17563186A JP 17563186 A JP17563186 A JP 17563186A JP S6333412 A JPS6333412 A JP S6333412A
- Authority
- JP
- Japan
- Prior art keywords
- resin composition
- phthalocyanine
- semiconductor device
- compound
- tetramine
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 14
- 239000000203 mixture Substances 0.000 title claims abstract description 12
- 239000003822 epoxy resin Substances 0.000 title claims description 11
- 229920000647 polyepoxide Polymers 0.000 title claims description 11
- 150000001875 compounds Chemical class 0.000 claims abstract description 20
- 239000004593 Epoxy Substances 0.000 claims abstract description 17
- -1 phthalocyanine tetramine compound Chemical class 0.000 claims abstract description 16
- 229910052742 iron Inorganic materials 0.000 claims abstract description 10
- 229910052802 copper Inorganic materials 0.000 claims abstract description 8
- 229910052745 lead Inorganic materials 0.000 claims abstract description 6
- 229910052759 nickel Inorganic materials 0.000 claims abstract description 6
- 239000000126 substance Substances 0.000 claims description 3
- 239000011342 resin composition Substances 0.000 abstract description 8
- 239000010949 copper Substances 0.000 abstract description 7
- 238000005260 corrosion Methods 0.000 abstract description 7
- 230000007797 corrosion Effects 0.000 abstract description 7
- 239000000463 material Substances 0.000 abstract description 4
- QKSIFUGZHOUETI-UHFFFAOYSA-N copper;azane Chemical compound N.N.N.N.[Cu+2] QKSIFUGZHOUETI-UHFFFAOYSA-N 0.000 abstract description 2
- LCFVJGUPQDGYKZ-UHFFFAOYSA-N Bisphenol A diglycidyl ether Chemical compound C=1C=C(OCC2OC2)C=CC=1C(C)(C)C(C=C1)=CC=C1OCC1CO1 LCFVJGUPQDGYKZ-UHFFFAOYSA-N 0.000 abstract 1
- 238000007789 sealing Methods 0.000 abstract 1
- XEEYBQQBJWHFJM-UHFFFAOYSA-N iron Substances [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 11
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 8
- GYZLOYUZLJXAJU-UHFFFAOYSA-N diglycidyl ether Chemical compound C1OC1COCC1CO1 GYZLOYUZLJXAJU-UHFFFAOYSA-N 0.000 description 5
- 229910052791 calcium Inorganic materials 0.000 description 4
- 239000011575 calcium Substances 0.000 description 4
- 239000003054 catalyst Substances 0.000 description 4
- 239000003795 chemical substances by application Substances 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 229920003986 novolac Polymers 0.000 description 4
- 229920000642 polymer Polymers 0.000 description 4
- 239000000047 product Substances 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 3
- 239000005011 phenolic resin Substances 0.000 description 3
- IEQIEDJGQAUEQZ-UHFFFAOYSA-N phthalocyanine Chemical class N1C(N=C2C3=CC=CC=C3C(N=C3C4=CC=CC=C4C(=N4)N3)=N2)=C(C=CC=C2)C2=C1N=C1C2=CC=CC=C2C4=N1 IEQIEDJGQAUEQZ-UHFFFAOYSA-N 0.000 description 3
- AGGKEGLBGGJEBZ-UHFFFAOYSA-N tetramethylenedisulfotetramine Chemical compound C1N(S2(=O)=O)CN3S(=O)(=O)N1CN2C3 AGGKEGLBGGJEBZ-UHFFFAOYSA-N 0.000 description 3
- PLIKAWJENQZMHA-UHFFFAOYSA-N 4-aminophenol Chemical compound NC1=CC=C(O)C=C1 PLIKAWJENQZMHA-UHFFFAOYSA-N 0.000 description 2
- KAKZBPTYRLMSJV-UHFFFAOYSA-N Butadiene Chemical compound C=CC=C KAKZBPTYRLMSJV-UHFFFAOYSA-N 0.000 description 2
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 2
- VTYYLEPIZMXCLO-UHFFFAOYSA-L Calcium carbonate Chemical compound [Ca+2].[O-]C([O-])=O VTYYLEPIZMXCLO-UHFFFAOYSA-L 0.000 description 2
- PEDCQBHIVMGVHV-UHFFFAOYSA-N Glycerine Chemical compound OCC(O)CO PEDCQBHIVMGVHV-UHFFFAOYSA-N 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- ATUOYWHBWRKTHZ-UHFFFAOYSA-N Propane Chemical compound CCC ATUOYWHBWRKTHZ-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- 125000001931 aliphatic group Chemical group 0.000 description 2
- 150000001412 amines Chemical class 0.000 description 2
- 229910052787 antimony Inorganic materials 0.000 description 2
- IISBACLAFKSPIT-UHFFFAOYSA-N bisphenol A Chemical compound C=1C=C(O)C=CC=1C(C)(C)C1=CC=C(O)C=C1 IISBACLAFKSPIT-UHFFFAOYSA-N 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 239000000460 chlorine Substances 0.000 description 2
- 229910052801 chlorine Inorganic materials 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 239000007822 coupling agent Substances 0.000 description 2
- ZUOUZKKEUPVFJK-UHFFFAOYSA-N diphenyl Chemical compound C1=CC=CC=C1C1=CC=CC=C1 ZUOUZKKEUPVFJK-UHFFFAOYSA-N 0.000 description 2
- USIUVYZYUHIAEV-UHFFFAOYSA-N diphenyl ether Chemical compound C=1C=CC=CC=1OC1=CC=CC=C1 USIUVYZYUHIAEV-UHFFFAOYSA-N 0.000 description 2
- 238000005538 encapsulation Methods 0.000 description 2
- 239000003063 flame retardant Substances 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 239000011133 lead Substances 0.000 description 2
- 229910052748 manganese Inorganic materials 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 239000006082 mold release agent Substances 0.000 description 2
- 229910052763 palladium Inorganic materials 0.000 description 2
- 229920001568 phenolic resin Polymers 0.000 description 2
- 229920000768 polyamine Polymers 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- GHMLBKRAJCXXBS-UHFFFAOYSA-N resorcinol Chemical compound OC1=CC=CC(O)=C1 GHMLBKRAJCXXBS-UHFFFAOYSA-N 0.000 description 2
- 150000003839 salts Chemical class 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- IMNIMPAHZVJRPE-UHFFFAOYSA-N triethylenediamine Chemical compound C1CN2CCN1CC2 IMNIMPAHZVJRPE-UHFFFAOYSA-N 0.000 description 2
- ARCGXLSVLAOJQL-UHFFFAOYSA-N trimellitic acid Chemical compound OC(=O)C1=CC=C(C(O)=O)C(C(O)=O)=C1 ARCGXLSVLAOJQL-UHFFFAOYSA-N 0.000 description 2
- RIOQSEWOXXDEQQ-UHFFFAOYSA-N triphenylphosphine Chemical compound C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1 RIOQSEWOXXDEQQ-UHFFFAOYSA-N 0.000 description 2
- 229910052720 vanadium Inorganic materials 0.000 description 2
- 229910052725 zinc Inorganic materials 0.000 description 2
- GFQYVLUOOAAOGM-UHFFFAOYSA-N zirconium(iv) silicate Chemical compound [Zr+4].[O-][Si]([O-])([O-])[O-] GFQYVLUOOAAOGM-UHFFFAOYSA-N 0.000 description 2
- DDHYZBVBQZYMTO-UHFFFAOYSA-N 1-(dimethylamino)pentan-1-ol Chemical compound CCCCC(O)N(C)C DDHYZBVBQZYMTO-UHFFFAOYSA-N 0.000 description 1
- FBHPRUXJQNWTEW-UHFFFAOYSA-N 1-benzyl-2-methylimidazole Chemical compound CC1=NC=CN1CC1=CC=CC=C1 FBHPRUXJQNWTEW-UHFFFAOYSA-N 0.000 description 1
- MCMFEZDRQOJKMN-UHFFFAOYSA-N 1-butylimidazole Chemical compound CCCCN1C=CN=C1 MCMFEZDRQOJKMN-UHFFFAOYSA-N 0.000 description 1
- AXFVIWBTKYFOCY-UHFFFAOYSA-N 1-n,1-n,3-n,3-n-tetramethylbutane-1,3-diamine Chemical compound CN(C)C(C)CCN(C)C AXFVIWBTKYFOCY-UHFFFAOYSA-N 0.000 description 1
- RNFJDJUURJAICM-UHFFFAOYSA-N 2,2,4,4,6,6-hexaphenoxy-1,3,5-triaza-2$l^{5},4$l^{5},6$l^{5}-triphosphacyclohexa-1,3,5-triene Chemical compound N=1P(OC=2C=CC=CC=2)(OC=2C=CC=CC=2)=NP(OC=2C=CC=CC=2)(OC=2C=CC=CC=2)=NP=1(OC=1C=CC=CC=1)OC1=CC=CC=C1 RNFJDJUURJAICM-UHFFFAOYSA-N 0.000 description 1
- BPHYZRNTQNPLFI-UHFFFAOYSA-N 2,4,6-trihydroxytoluene Chemical compound CC1=C(O)C=C(O)C=C1O BPHYZRNTQNPLFI-UHFFFAOYSA-N 0.000 description 1
- AHDSRXYHVZECER-UHFFFAOYSA-N 2,4,6-tris[(dimethylamino)methyl]phenol Chemical compound CN(C)CC1=CC(CN(C)C)=C(O)C(CN(C)C)=C1 AHDSRXYHVZECER-UHFFFAOYSA-N 0.000 description 1
- NZHNJOJQMPJLFA-UHFFFAOYSA-N 2-[3,5-bis(oxiran-2-yl)phenyl]oxirane Chemical compound C1OC1C1=CC(C2OC2)=CC(C2OC2)=C1 NZHNJOJQMPJLFA-UHFFFAOYSA-N 0.000 description 1
- LJBWJFWNFUKAGS-UHFFFAOYSA-N 2-[bis(2-hydroxyphenyl)methyl]phenol Chemical compound OC1=CC=CC=C1C(C=1C(=CC=CC=1)O)C1=CC=CC=C1O LJBWJFWNFUKAGS-UHFFFAOYSA-N 0.000 description 1
- GVQDVIAKPKRTFJ-UHFFFAOYSA-N 2-ethyl-1,4-dimethylimidazole Chemical compound CCC1=NC(C)=CN1C GVQDVIAKPKRTFJ-UHFFFAOYSA-N 0.000 description 1
- PQAMFDRRWURCFQ-UHFFFAOYSA-N 2-ethyl-1h-imidazole Chemical compound CCC1=NC=CN1 PQAMFDRRWURCFQ-UHFFFAOYSA-N 0.000 description 1
- YTWBFUCJVWKCCK-UHFFFAOYSA-N 2-heptadecyl-1h-imidazole Chemical compound CCCCCCCCCCCCCCCCCC1=NC=CN1 YTWBFUCJVWKCCK-UHFFFAOYSA-N 0.000 description 1
- DFIOBSJHIZBUCE-UHFFFAOYSA-N 2-hydroxyterephthalaldehyde Chemical compound OC1=CC(C=O)=CC=C1C=O DFIOBSJHIZBUCE-UHFFFAOYSA-N 0.000 description 1
- KXGFMDJXCMQABM-UHFFFAOYSA-N 2-methoxy-6-methylphenol Chemical compound [CH]OC1=CC=CC([CH])=C1O KXGFMDJXCMQABM-UHFFFAOYSA-N 0.000 description 1
- SIQHSJOKAUDDLN-UHFFFAOYSA-N 2-methyl-1-propylimidazole Chemical compound CCCN1C=CN=C1C SIQHSJOKAUDDLN-UHFFFAOYSA-N 0.000 description 1
- LXBGSDVWAMZHDD-UHFFFAOYSA-N 2-methyl-1h-imidazole Chemical compound CC1=NC=CN1 LXBGSDVWAMZHDD-UHFFFAOYSA-N 0.000 description 1
- LLEASVZEQBICSN-UHFFFAOYSA-N 2-undecyl-1h-imidazole Chemical compound CCCCCCCCCCCC1=NC=CN1 LLEASVZEQBICSN-UHFFFAOYSA-N 0.000 description 1
- WMNWJTDAUWBXFJ-UHFFFAOYSA-N 3,3,4-trimethylheptane-2,2-diamine Chemical compound CCCC(C)C(C)(C)C(C)(N)N WMNWJTDAUWBXFJ-UHFFFAOYSA-N 0.000 description 1
- YJCSUBLMBRTUOX-UHFFFAOYSA-N 3,3,4-trimethylhexane-2,2-diamine Chemical compound CCC(C)C(C)(C)C(C)(N)N YJCSUBLMBRTUOX-UHFFFAOYSA-N 0.000 description 1
- SESYNEDUKZDRJL-UHFFFAOYSA-N 3-(2-methylimidazol-1-yl)propanenitrile Chemical compound CC1=NC=CN1CCC#N SESYNEDUKZDRJL-UHFFFAOYSA-N 0.000 description 1
- BVYPJEBKDLFIDL-UHFFFAOYSA-N 3-(2-phenylimidazol-1-yl)propanenitrile Chemical compound N#CCCN1C=CN=C1C1=CC=CC=C1 BVYPJEBKDLFIDL-UHFFFAOYSA-N 0.000 description 1
- SZUPZARBRLCVCB-UHFFFAOYSA-N 3-(2-undecylimidazol-1-yl)propanenitrile Chemical compound CCCCCCCCCCCC1=NC=CN1CCC#N SZUPZARBRLCVCB-UHFFFAOYSA-N 0.000 description 1
- JMKRMZDQIJICMH-UHFFFAOYSA-N 3-(6-oxabicyclo[3.1.0]hexan-3-yloxy)-6-oxabicyclo[3.1.0]hexane Chemical compound C1C2OC2CC1OC1CC2OC2C1 JMKRMZDQIJICMH-UHFFFAOYSA-N 0.000 description 1
- RIAHASMJDOMQER-UHFFFAOYSA-N 5-ethyl-2-methyl-1h-imidazole Chemical compound CCC1=CN=C(C)N1 RIAHASMJDOMQER-UHFFFAOYSA-N 0.000 description 1
- YXALYBMHAYZKAP-UHFFFAOYSA-N 7-oxabicyclo[4.1.0]heptan-4-ylmethyl 7-oxabicyclo[4.1.0]heptane-4-carboxylate Chemical compound C1CC2OC2CC1C(=O)OCC1CC2OC2CC1 YXALYBMHAYZKAP-UHFFFAOYSA-N 0.000 description 1
- 239000004953 Aliphatic polyamide Substances 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- LZZYPRNAOMGNLH-UHFFFAOYSA-M Cetrimonium bromide Chemical compound [Br-].CCCCCCCCCCCCCCCC[N+](C)(C)C LZZYPRNAOMGNLH-UHFFFAOYSA-M 0.000 description 1
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- WLLGXSLBOPFWQV-UHFFFAOYSA-N MGK 264 Chemical compound C1=CC2CC1C1C2C(=O)N(CC(CC)CCCC)C1=O WLLGXSLBOPFWQV-UHFFFAOYSA-N 0.000 description 1
- 229920000877 Melamine resin Polymers 0.000 description 1
- 239000004640 Melamine resin Substances 0.000 description 1
- JLTDJTHDQAWBAV-UHFFFAOYSA-N N,N-dimethylaniline Chemical compound CN(C)C1=CC=CC=C1 JLTDJTHDQAWBAV-UHFFFAOYSA-N 0.000 description 1
- SJRJJKPEHAURKC-UHFFFAOYSA-N N-Methylmorpholine Chemical compound CN1CCOCC1 SJRJJKPEHAURKC-UHFFFAOYSA-N 0.000 description 1
- UEEJHVSXFDXPFK-UHFFFAOYSA-N N-dimethylaminoethanol Chemical compound CN(C)CCO UEEJHVSXFDXPFK-UHFFFAOYSA-N 0.000 description 1
- 229910001455 Ni+ Inorganic materials 0.000 description 1
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N Phenol Chemical compound OC1=CC=CC=C1 ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- VBIIFPGSPJYLRR-UHFFFAOYSA-M Stearyltrimethylammonium chloride Chemical compound [Cl-].CCCCCCCCCCCCCCCCCC[N+](C)(C)C VBIIFPGSPJYLRR-UHFFFAOYSA-M 0.000 description 1
- 229910000831 Steel Inorganic materials 0.000 description 1
- GSEJCLTVZPLZKY-UHFFFAOYSA-N Triethanolamine Chemical compound OCCN(CCO)CCO GSEJCLTVZPLZKY-UHFFFAOYSA-N 0.000 description 1
- ZJCCRDAZUWHFQH-UHFFFAOYSA-N Trimethylolpropane Chemical compound CCC(CO)(CO)CO ZJCCRDAZUWHFQH-UHFFFAOYSA-N 0.000 description 1
- 229920001807 Urea-formaldehyde Polymers 0.000 description 1
- YKTSYUJCYHOUJP-UHFFFAOYSA-N [O--].[Al+3].[Al+3].[O-][Si]([O-])([O-])[O-] Chemical compound [O--].[Al+3].[Al+3].[O-][Si]([O-])([O-])[O-] YKTSYUJCYHOUJP-UHFFFAOYSA-N 0.000 description 1
- 229920003231 aliphatic polyamide Polymers 0.000 description 1
- WNROFYMDJYEPJX-UHFFFAOYSA-K aluminium hydroxide Chemical compound [OH-].[OH-].[OH-].[Al+3] WNROFYMDJYEPJX-UHFFFAOYSA-K 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- SWLVFNYSXGMGBS-UHFFFAOYSA-N ammonium bromide Chemical compound [NH4+].[Br-] SWLVFNYSXGMGBS-UHFFFAOYSA-N 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 239000004760 aramid Substances 0.000 description 1
- 229920003235 aromatic polyamide Polymers 0.000 description 1
- 125000003118 aryl group Chemical group 0.000 description 1
- VZWMKHUMEIECPK-UHFFFAOYSA-M benzyl-dimethyl-octadecylazanium;bromide Chemical compound [Br-].CCCCCCCCCCCCCCCCCC[N+](C)(C)CC1=CC=CC=C1 VZWMKHUMEIECPK-UHFFFAOYSA-M 0.000 description 1
- AFBPHRMRBXPVPX-UHFFFAOYSA-M benzyl-dimethyl-tetradecylazanium;acetate Chemical compound CC([O-])=O.CCCCCCCCCCCCCC[N+](C)(C)CC1=CC=CC=C1 AFBPHRMRBXPVPX-UHFFFAOYSA-M 0.000 description 1
- OCBHHZMJRVXXQK-UHFFFAOYSA-M benzyl-dimethyl-tetradecylazanium;chloride Chemical compound [Cl-].CCCCCCCCCCCCCC[N+](C)(C)CC1=CC=CC=C1 OCBHHZMJRVXXQK-UHFFFAOYSA-M 0.000 description 1
- 235000010290 biphenyl Nutrition 0.000 description 1
- 239000004305 biphenyl Substances 0.000 description 1
- GLROGUSVUGSGPO-UHFFFAOYSA-N bis(3-methyl-7-oxabicyclo[4.1.0]heptan-4-yl) hexanedioate Chemical compound C1C2OC2CC(C)C1OC(=O)CCCCC(=O)OC1CC2OC2CC1C GLROGUSVUGSGPO-UHFFFAOYSA-N 0.000 description 1
- UORVGPXVDQYIDP-BJUDXGSMSA-N borane Chemical class [10BH3] UORVGPXVDQYIDP-BJUDXGSMSA-N 0.000 description 1
- 229910052793 cadmium Inorganic materials 0.000 description 1
- 229910000019 calcium carbonate Inorganic materials 0.000 description 1
- CJZGTCYPCWQAJB-UHFFFAOYSA-L calcium stearate Chemical compound [Ca+2].CCCCCCCCCCCCCCCCCC([O-])=O.CCCCCCCCCCCCCCCCCC([O-])=O CJZGTCYPCWQAJB-UHFFFAOYSA-L 0.000 description 1
- 239000008116 calcium stearate Substances 0.000 description 1
- 235000013539 calcium stearate Nutrition 0.000 description 1
- 239000006229 carbon black Substances 0.000 description 1
- 150000001244 carboxylic acid anhydrides Chemical class 0.000 description 1
- 150000001732 carboxylic acid derivatives Chemical class 0.000 description 1
- 150000001735 carboxylic acids Chemical class 0.000 description 1
- WOWHHFRSBJGXCM-UHFFFAOYSA-M cetyltrimethylammonium chloride Chemical compound [Cl-].CCCCCCCCCCCCCCCC[N+](C)(C)C WOWHHFRSBJGXCM-UHFFFAOYSA-M 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 229960002887 deanol Drugs 0.000 description 1
- QGBSISYHAICWAH-UHFFFAOYSA-N dicyandiamide Chemical compound NC(N)=NC#N QGBSISYHAICWAH-UHFFFAOYSA-N 0.000 description 1
- 235000014113 dietary fatty acids Nutrition 0.000 description 1
- DDXLVDQZPFLQMZ-UHFFFAOYSA-M dodecyl(trimethyl)azanium;chloride Chemical compound [Cl-].CCCCCCCCCCCC[N+](C)(C)C DDXLVDQZPFLQMZ-UHFFFAOYSA-M 0.000 description 1
- YIFWXQBNRQNUON-UHFFFAOYSA-M dodecyl(trimethyl)azanium;iodide Chemical compound [I-].CCCCCCCCCCCC[N+](C)(C)C YIFWXQBNRQNUON-UHFFFAOYSA-M 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- LDLDYFCCDKENPD-UHFFFAOYSA-N ethenylcyclohexane Chemical compound C=CC1CCCCC1 LDLDYFCCDKENPD-UHFFFAOYSA-N 0.000 description 1
- 239000000194 fatty acid Substances 0.000 description 1
- 229930195729 fatty acid Natural products 0.000 description 1
- 150000004665 fatty acids Chemical class 0.000 description 1
- 239000012765 fibrous filler Substances 0.000 description 1
- 239000000945 filler Substances 0.000 description 1
- SLGWESQGEUXWJQ-UHFFFAOYSA-N formaldehyde;phenol Chemical compound O=C.OC1=CC=CC=C1 SLGWESQGEUXWJQ-UHFFFAOYSA-N 0.000 description 1
- 239000005350 fused silica glass Substances 0.000 description 1
- 229940083124 ganglion-blocking antiadrenergic secondary and tertiary amines Drugs 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 235000011187 glycerol Nutrition 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- LNEPOXFFQSENCJ-UHFFFAOYSA-N haloperidol Chemical compound C1CC(O)(C=2C=CC(Cl)=CC=2)CCN1CCCC(=O)C1=CC=C(F)C=C1 LNEPOXFFQSENCJ-UHFFFAOYSA-N 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 150000002460 imidazoles Chemical class 0.000 description 1
- 150000003949 imides Chemical class 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 150000008040 ionic compounds Chemical class 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000010445 mica Substances 0.000 description 1
- 229910052618 mica group Inorganic materials 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000012466 permeate Substances 0.000 description 1
- QCDYQQDYXPDABM-UHFFFAOYSA-N phloroglucinol Chemical compound OC1=CC(O)=CC(O)=C1 QCDYQQDYXPDABM-UHFFFAOYSA-N 0.000 description 1
- 229960001553 phloroglucinol Drugs 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 239000001294 propane Substances 0.000 description 1
- 150000003242 quaternary ammonium salts Chemical class 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- 229910052712 strontium Inorganic materials 0.000 description 1
- 229920003002 synthetic resin Polymers 0.000 description 1
- 239000000057 synthetic resin Substances 0.000 description 1
- 239000000454 talc Substances 0.000 description 1
- 229910052623 talc Inorganic materials 0.000 description 1
- KUCOHFSKRZZVRO-UHFFFAOYSA-N terephthalaldehyde Chemical compound O=CC1=CC=C(C=O)C=C1 KUCOHFSKRZZVRO-UHFFFAOYSA-N 0.000 description 1
- 150000003512 tertiary amines Chemical class 0.000 description 1
- 229920002803 thermoplastic polyurethane Polymers 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 238000001721 transfer moulding Methods 0.000 description 1
- UFTFJSFQGQCHQW-UHFFFAOYSA-N triformin Chemical compound O=COCC(OC=O)COC=O UFTFJSFQGQCHQW-UHFFFAOYSA-N 0.000 description 1
- UKRDPEFKFJNXQM-UHFFFAOYSA-N vinylsilane Chemical compound [SiH3]C=C UKRDPEFKFJNXQM-UHFFFAOYSA-N 0.000 description 1
- 239000001993 wax Substances 0.000 description 1
- 229910052845 zircon Inorganic materials 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
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- Compositions Of Macromolecular Compounds (AREA)
- Epoxy Resins (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は、耐熱性、耐湿性、耐腐食性にすぐれた硬化物
を提供可能なエポキシ樹脂組成物、及び、樹脂組成物で
封止・被覆された半導体装置に関する。Detailed Description of the Invention [Field of Industrial Application] The present invention provides an epoxy resin composition that can provide a cured product with excellent heat resistance, moisture resistance, and corrosion resistance, and an epoxy resin composition that can provide a cured product with excellent heat resistance, moisture resistance, and corrosion resistance, and The present invention relates to coated semiconductor devices.
メモリLSIは、高密度化、高集積度化のすう勢にあり
、高温状態、高温高湿状態下での信頼性向上は必然的な
要求となっている。高温高湿状態、例えば、65℃、9
5%相対湿度中、及び、85℃、85%相対湿度中、あ
るいは、121℃、二気圧過飽和水蒸気中などの雰囲気
中に、半導体装置した場合には、素子上のAQ配線が腐
食断線する故障が生じ、これが信頼性低下の大きな要因
となっている。Memory LSIs are trending toward higher density and higher integration, and there is an inevitable demand for improved reliability under high temperature conditions and high temperature and high humidity conditions. High temperature and high humidity conditions, e.g. 65℃, 9
If a semiconductor device is installed in an atmosphere such as 5% relative humidity, 85°C and 85% relative humidity, or 121°C and two-atmosphere supersaturated steam, the AQ wiring on the device will corrode and break. occurs, and this is a major factor in reducing reliability.
AQ配線の腐食断線の大きな原因は、パッケージ内部に
浸入した水分、樹脂組成物中に含まれているイオン性不
純物、特に塩素イオンによる所が大である。しかし、樹
脂封止品については、樹脂バルク中を透湿、吸湿して素
子表面に至る水分を除圧することは困難である。The major causes of corrosion and breakage of AQ wiring are moisture that has entered the inside of the package and ionic impurities contained in the resin composition, especially chlorine ions. However, for resin-sealed products, it is difficult to remove the pressure of moisture that permeates and absorbs moisture through the resin bulk and reaches the element surface.
そこで、この対策として、樹脂組成物の各素材を精製す
ることにより、イオン性不純物(特に塩素イオン)を除
去する方策が、種に検討されてきた。しかし、これらの
方法でも加水分解性のイオン性化合物を含む素材の場合
には、根本的な対策となり得ないのが現状である。(特
開昭60−202117号公報〕
〔発明が解決しようとする問題点〕
上記従来技術は、樹脂組成物のAQに対する防食性に対
する配慮が不足しており、この点からの工夫がなされて
いるとは云えない。Therefore, as a countermeasure to this problem, a method of removing ionic impurities (particularly chlorine ions) by purifying each material of the resin composition has been studied. However, the current situation is that even these methods cannot provide fundamental countermeasures in the case of materials containing hydrolyzable ionic compounds. (Unexamined Japanese Patent Publication No. 60-202117) [Problems to be Solved by the Invention] The above-mentioned conventional technology lacks consideration for the corrosion resistance of the resin composition against AQ, and improvements have been made from this point of view. I cannot say that.
本発明の目的は、耐熱性、耐湿性、耐食性にすぐれた硬
化物を提供可能なエポキシ樹脂組成物、及び、樹脂組成
物で封止・被覆した半導体装置を提供することにある。An object of the present invention is to provide an epoxy resin composition that can provide a cured product with excellent heat resistance, moisture resistance, and corrosion resistance, and a semiconductor device sealed and coated with the resin composition.
上記目的は、以下の技術を採用することにより達成され
る。その要旨は、
1、少なくとも、多官能エポキシ化合物[A]と、一般
式(1)
%式%
〔式中、Mは無、Cu、Pb、Fe、Ni。The above object is achieved by employing the following technology. The gist is as follows: 1. At least a polyfunctional epoxy compound [A] and the general formula (1) % formula % [wherein M is none, Cu, Pb, Fe, Ni.
Coのいずれかである。〕で表わされる4゜47 、4
# 、 4L//−フタロシアニンテトラミン系化合
物とを含むことを特徴とするエポキシ樹脂組成物。Either Co. ] 4゜47 , 4
#, 4L//-phthalocyaninetetramine compound.
2、少なくとも、多官能エポキシ化合物(A)と、一般
式(1)
〔式中、Mは無g Cu y P b + F e +
N i*COのいずれかである。〕で表わされる4゜
4′、4”、4−フタロシアニンテトラミン系化合物と
を含むエポキシ樹脂組成物で、少なくとも半導体素子の
一部を封止・被覆してなることを特徴とする半導体装置
である。2. At least a polyfunctional epoxy compound (A) and the general formula (1) [wherein M is no g Cu y P b + Fe +
Either N i *CO. ] A semiconductor device characterized in that at least a part of a semiconductor element is sealed and covered with an epoxy resin composition containing a 4゜4',4'',4-phthalocyaninetetramine-based compound represented by .
本発明に於いて、多官能エポキシ化合物(A)は、例え
ば、ビスフェノールAのジグリシジルエーテル、ブタジ
エンジエボキサイド、3,4−エポキシシクロヘキシル
メチル−(3,4−エポキシ)シクロヘキサンカルボキ
シレート、ビニルシクロヘキサンジオキシド、4,4′
−ジ(1,2−エポキシエチル)ジフェニルエーテル、
4゜4’ −(1,2−エポキシエチル)ビフェニル、
2.2−ビス(3,4−エポキシシクロヘキシル)プロ
パン、レゾルシンのグリシジルエーテル、フロログルシ
ンのジグリシジルエーテル、メチルフロログルシンのジ
グリシジルエーテル、ビス−(3,4−エポキシシクロ
ペンチル)エーテル、2− (3,4−エポキシ)シク
ロヘキサン−5゜5−スピロ(3,4−エポキシ)−シ
クロヘキサン−m−ジオキサン、ビス−(3,4−エポ
キシ−6−メチルシクロヘキシル)アジペート、NIN
’−m−フェニレンビス(4,5−エポキシ1゜2−シ
クロヘキサン)ジカルボキシイミドなどの三官能のエポ
キシ化合物、パラアミノフェノールのトリグリシジルエ
ーテル、ポリアリルグリシジルエーテル、1,3.5−
トリ(1,2−エポキシエチル)ベンゼン、2.2’
、4.4’ −テトラグリシドキシベンゾフェノン、テ
トラグリシド、キシテトラフェニルエタン、フェノール
ホルムア゛ルデヒドノボラックのポリグリシジルエーテ
ル、グリセリンのトルグリシジルエーテル、トリメチロ
ールプロパンのトリグリシジルエーテルなど三官能以上
のエポキシ化合物が用いられる。In the present invention, the polyfunctional epoxy compound (A) is, for example, diglycidyl ether of bisphenol A, butadiene dieboxide, 3,4-epoxycyclohexylmethyl-(3,4-epoxy)cyclohexanecarboxylate, vinylcyclohexane. Dioxide, 4,4'
-di(1,2-epoxyethyl)diphenyl ether,
4゜4'-(1,2-epoxyethyl)biphenyl,
2.2-bis(3,4-epoxycyclohexyl)propane, glycidyl ether of resorcinol, diglycidyl ether of phloroglucin, diglycidyl ether of methylphloroglucin, bis-(3,4-epoxycyclopentyl)ether, 2-( 3,4-epoxy)cyclohexane-5゜5-spiro(3,4-epoxy)-cyclohexane-m-dioxane, bis-(3,4-epoxy-6-methylcyclohexyl)adipate, NIN
Trifunctional epoxy compounds such as '-m-phenylenebis(4,5-epoxy1゜2-cyclohexane) dicarboximide, triglycidyl ether of para-aminophenol, polyallyl glycidyl ether, 1,3.5-
Tri(1,2-epoxyethyl)benzene, 2.2'
, 4.4'-tetraglycidoxybenzophenone, tetraglyside, xytetraphenylethane, polyglycidyl ether of phenolformaldehyde novolak, triglycidyl ether of glycerin, triglycidyl ether of trimethylolpropane, etc. used.
上記エポキシ化合物は、用途、目的に応じて一種以上併
用して使用することも出来る。The above epoxy compounds can be used in combination of one or more types depending on the use and purpose.
また、本発明に於いて、−形式(II)〔式中、Mは無
t Cu、Pb、Fe、Ni+Goのいずれかである。Further, in the present invention, -form (II) [wherein M is Cu, Pb, Fe, or Ni+Go].
〕で表わされる4゜4 ’ 、 4 ’ 、 4”−フ
タロシアニンテトラミン系化合物とは、
本発明において、−形式CI)
Hz
〔式中、MはMg、Al1.Ca、Ti、V、Cr。In the present invention, the 4゜4', 4', 4''-phthalocyanine tetramine compound represented by -form CI) Hz [wherein M is Mg, Al1.Ca, Ti, V, Cr.
Mn、Fe、Go、Ni、Cu、Zn、Sr。Mn, Fe, Go, Ni, Cu, Zn, Sr.
Zr、Pd、Ag、Cd、Sn+ Sb+ Bi。Zr, Pd, Ag, Cd, Sn+ Sb+ Bi.
Pb、PL、Au、及びこれら金属の中のいずれかであ
る。〕で表わされる4 、 4 / 、 4 # 、
4 ″’−フタロシアニンテトラミン系化合物には、例
えば、4 、4 / 、 4 a 、 4///−フタ
ロシアニンテトラミンマグネシウム、4.4’ 、4’
、4”−フタロシアニンテトラミンアルミニウム、4
.4’ 。Pb, PL, Au, or any of these metals. ] 4, 4 /, 4 #,
Examples of 4''-phthalocyaninetetramine compounds include 4,4/, 4a, 4///-phthalocyaninetetraminemagnesium, 4.4', 4'
, 4”-phthalocyaninetetramine aluminum, 4
.. 4'.
4 、 、4///−フタロシアニンテトラミンカルシ
ウム、4 、4 ’ 、 4 N 、 4 #//−フ
タロシアニンテトラミン鉄、414 ’ 、 4 #
、 4///−フタロシアニンテトラミン銅などの41
4 ’ 、 4 # 、 4///−フタロシアニンテ
トラミンの金属塩などがある6本発明では、−形式(1
)で表わされる4、4’ 。4, , 4///-phthalocyanine tetramine calcium, 4, 4', 4 N, 4 #//-phthalocyanine tetramine iron, 414', 4 #
, 4///-phthalocyanine tetramine copper etc. 41
4', 4#, 4///-Metal salts of phthalocyanine tetramine, etc. 6 In the present invention, -format (1
) 4,4'.
4′、4“′−フタロシアニンテトラミン系化合物に、
更に下記−形式(n)、 〔m)・・・・・・[11
)
および/または
・・・・・〔夏■〕
〔式中、MはMg、AQ、Ca、Ti、V、Cr。4′,4“′-phthalocyaninetetramine compounds,
Furthermore, the following - format (n), [m)...[11
) and/or... [Summer ■] [In the formula, M is Mg, AQ, Ca, Ti, V, Cr.
Mn、 Fe、Go、Ni、Cu、 Zn、 5
rsZr、Pd、Ag+ Cd、Snt Sb、B
i。Mn, Fe, Go, Ni, Cu, Zn, 5
rsZr, Pd, Ag+ Cd, Snt Sb, B
i.
Pb、Pt、Auの中のいずれかである。〕で表わされ
るフタロシアニンテトラミン系化合物を添加して用いる
ことも出来る。It is one of Pb, Pt, and Au. ] It is also possible to use a phthalocyanine tetramine compound represented by the following.
本発明のエポキシ樹脂組成物には従来公知の硬化剤が併
用されてもよい。それらは、垣内弘著;エポキシ樹脂(
昭和45年9月発行)109〜149ページ、Lee、
Nevilla著; Epoxy Resins(M
c Gray−Hill Book Company
Ince New Yorkt1957年発行)63〜
141ページ、P 、 E 、Brunis著; Ep
oxy Re5ins Technology (In
tersciencePublishers New
York、 1968年発行)45〜111ページなど
に記載の化合物であり、例えば、脂肪族ポリアミン、芳
香族ポリアミン、第二および第三アミンを含むアミン類
、カルボン酸類、トリメリット酸トリグリセライド(リ
カレジンTMTAなど)を含む)カルボン酸無水物類、
脂肪族および芳香族ポリアミドオリゴマーおよびポリマ
ー類。A conventionally known curing agent may be used in combination with the epoxy resin composition of the present invention. They are written by Hiroshi Kakiuchi; Epoxy resin (
Published September 1970) pages 109-149, Lee,
Written by Nevilla; Epoxy Resins (M
c Gray-Hill Book Company
Ince New York (published in 1957) 63~
141 pages, by P.E. Brunis; Ep.
Oxy Re5ins Technology (In
tersciencePublishers New
York, 1968) pages 45 to 111, such as aliphatic polyamines, aromatic polyamines, amines including secondary and tertiary amines, carboxylic acids, trimellitic acid triglyceride (Recaresin TMTA, etc.) ) carboxylic acid anhydrides,
Aliphatic and aromatic polyamide oligomers and polymers.
三フッ化ホウ素−アミンコンプレックス類、フェノール
樹脂、メラミン樹脂、ウレア樹脂、ウレタン樹脂などの
合成樹脂初期縮合物類、その他、ジシアンジアミド、カ
ルボン酸ヒドラジド、ポリアミノマレイミド類などがあ
る。Examples include boron trifluoride-amine complexes, synthetic resin initial condensates such as phenol resin, melamine resin, urea resin, and urethane resin, as well as dicyandiamide, carboxylic acid hydrazide, and polyaminomaleimide.
これらの硬化剤は、用途、目的に応じて一種以上を使用
することが出来る。One or more types of these curing agents can be used depending on the use and purpose.
特に、フェノールノボラック樹脂は、硬化樹脂の金属イ
ンサートに対する密着性、成形時の作業性などの点から
、本発明の主たる目的である半導体封止用材料の硬化剤
成分として好適である。In particular, phenol novolac resin is suitable as a curing agent component of a semiconductor encapsulation material, which is the main objective of the present invention, from the viewpoint of the adhesiveness of the cured resin to the metal insert and the workability during molding.
樹脂組成物には、エポキシ化合物とノボラック型フェノ
ール樹脂の硬化反応を促進する効果が知られている公知
の触媒を使用することが出来る。For the resin composition, a known catalyst known to be effective in accelerating the curing reaction between an epoxy compound and a novolac type phenol resin can be used.
この触媒は、例えば、トリエタノールアミン、テトラメ
チルブタンジアミン、テトラメチルペンタンジアミン、
テトラメチルヘキサンジアミン、トリエチレンジアミン
及びジメチルアニリン等の第3級アミン、ジメチルアミ
ノエタノール及びジメチルアミノペンタノール等のオキ
シアルキルアミンならびにトリス(ジメチルアミノメチ
ル)フェノール及びメチルモルホリン等のアミン類を適
用することができる。This catalyst includes, for example, triethanolamine, tetramethylbutanediamine, tetramethylpentanediamine,
Tertiary amines such as tetramethylhexanediamine, triethylenediamine and dimethylaniline, oxyalkylamines such as dimethylaminoethanol and dimethylaminopentanol, and amines such as tris(dimethylaminomethyl)phenol and methylmorpholine can be applied. can.
又は、同じ目的で、触媒として、例えば、セチルトリメ
チルアンモニウムブロマイド、セチルトリメチルアンモ
ニウムクロライド、ドデシルトリメチルアンモニウムア
イオダイド、トリメチルドデシルアンモニウムクロライ
ド、ベンジルジメチルテトラデシルアンモニウムクロラ
イド、ペンジルメチルパルミチルアンモニウムクロライ
ド、アリルドデシルトリメチルアンモニウムブロマイド
、ベンジルジメチルステアリルアンモニウムブロマイド
、ステアリルトリメチルアンモニウムクロライド及びベ
ンジルジメチルテトラデシルアンモニウムアセテート等
の第4級アンモニウム塩を適用することができ、更には
、2−ウンデシルイミダゾール、2−メチルイミダゾー
ル、2−エチルイミダゾール、2−ヘプタデシルイミダ
ゾール、2−メチル−4−エチルイミダゾール、1−ブ
チルイミダゾール、1−プロピル−2−メチルイミダゾ
ール、1−ベンジル−2−メチルイミダゾール。Or, for the same purpose, as a catalyst, for example, cetyltrimethylammonium bromide, cetyltrimethylammonium chloride, dodecyltrimethylammonium iodide, trimethyldodecylammonium chloride, benzyldimethyltetradecylammonium chloride, pendylmethylpalmitylammonium chloride, allyldodecyltrimethyl Quaternary ammonium salts such as ammonium bromide, benzyldimethylstearylammonium bromide, stearyltrimethylammonium chloride and benzyldimethyltetradecylammonium acetate can be applied, as well as 2-undecylimidazole, 2-methylimidazole, 2- Ethylimidazole, 2-heptadecylimidazole, 2-methyl-4-ethylimidazole, 1-butylimidazole, 1-propyl-2-methylimidazole, 1-benzyl-2-methylimidazole.
1−シアノエチル−2−メチルイミダゾール、1−シア
ノエチル−2−ウンデシルイミダゾール、1−シアノエ
チル−2−フェニルイミダゾール、1−アジン−2−メ
チルイミダゾール及び1−アジン−2−ウンデシルイミ
ダゾール等のイミダゾール化合物、あるいは、トリフェ
ニルホスフィンテトラフェニルボレート、トルエチルア
ミンテトラフェニルボレート、N−メチルモルホリンテ
トラフェニルボレート、ピリジンテトラフェニルボレー
ト2−エチル−4−メチルイミダゾールテトラフェニル
ボレート及び2−エチル−1,4−ジメチルイミダゾー
ルテトラフェニルボレート等のテトラフェニルボロン塩
等が有用である。Imidazole compounds such as 1-cyanoethyl-2-methylimidazole, 1-cyanoethyl-2-undecylimidazole, 1-cyanoethyl-2-phenylimidazole, 1-azine-2-methylimidazole and 1-azine-2-undecylimidazole , or triphenylphosphine tetraphenylborate, toluethylamine tetraphenylborate, N-methylmorpholine tetraphenylborate, pyridine tetraphenylborate 2-ethyl-4-methylimidazole tetraphenylborate and 2-ethyl-1,4-dimethylimidazole Tetraphenylboron salts such as tetraphenylborate are useful.
これらの触媒はその二種以上を併用することもでき、そ
の量は、多官能エポキシ化合物(A)100に対して、
重量比で、0.01〜20の範囲で用いればよい。Two or more of these catalysts can be used in combination, and the amount thereof is based on 100% of the polyfunctional epoxy compound (A).
It may be used in a weight ratio of 0.01 to 20.
また、本発明のエポキシ樹脂組成物には、その用途、使
用目的に応じて、例えば、炭酸カルシウム、シリカ、ア
ルミナ、チタニア、水酸化アルミニウム、ケイ酸アルミ
ニウム、ケイ酸ジルコニウム、ジルコン、ガラス、タル
ク、マイカ、黒鉛。The epoxy resin composition of the present invention may also include, for example, calcium carbonate, silica, alumina, titania, aluminum hydroxide, aluminum silicate, zirconium silicate, zircon, glass, talc, Mica, graphite.
アルミニウム、銅、鉄などの粉末や短繊維状充填剤、脂
肪酸及びワックス類等の離型剤、エポキシシラン、ビニ
ルシラン、ボラン系化合物及びアルキルチタネート系化
合物等のカップリング剤、そしてさらに、アンチモンや
リンの化合物及びハロゲン含有化合物のような難燃剤を
加えることができる。Powders and short fibrous fillers such as aluminum, copper and iron, mold release agents such as fatty acids and waxes, coupling agents such as epoxy silane, vinyl silane, borane compounds and alkyl titanate compounds, and furthermore, antimony and phosphorus. Flame retardants such as compounds and halogen-containing compounds can be added.
〈実施例1〜5.比較例〉
多官能エポキシ化合物として、トリス(ヒドロキシフェ
ニル)メタンベースの多官能エポキシ化合物、XD−9
053(エポキシ当量、225゜ダウ・ケミカル社製)
100重量部。<Examples 1 to 5. Comparative Example> As a polyfunctional epoxy compound, a tris(hydroxyphenyl)methane-based polyfunctional epoxy compound, XD-9
053 (epoxy equivalent, 225° manufactured by Dow Chemical Company)
100 parts by weight.
硬化剤として、4.4’ 、4’ 、4” −フタロシ
アニンテトラミン、4.4’ 、4’ 、4″’ −フ
タロシアニンテトラミンカルシウム、4.4’ 。As curing agent: 4.4',4',4''-phthalocyaninetetramine, 4.4',4',4''-phthalocyaninetetramine calcium, 4.4'.
4’、4”−フタロシアニンテトラミンアルミニウム、
4.4’ 、4’ 、4 −フタロシアニン鉄。4',4''-phthalocyaninetetramine aluminum,
4.4',4',4-Phthalocyanine iron.
4.4’ 、4′、4−フタロシアニン鋼の五種類のフ
タロシアニンテトラミン系化合物、並゛びに、ノボラッ
ク型フェノール樹脂を第1表に示した所定配合量。4. Predetermined blending amounts of five types of phthalocyanine tetramine compounds for 4', 4', 4-phthalocyanine steel and novolak type phenolic resin as shown in Table 1.
硬化促進剤として、トリフェニルホスフィン2重量部、
カップリング剤として、エポキシシランKBM303
(信越化学社製)二重置部、難燃剤として、付加型イミ
ドコート赤リン4重量部、離型剤として、ステアリン酸
カルシウム1重量部とへキストワックスE(ヘキストジ
ャパン社製)−重量部、充填材として、溶融石英ガラス
粉75重景パーセント、着色剤として、カーボンブラッ
ク(キャボット社製)二重置部を添加配合した。As a curing accelerator, 2 parts by weight of triphenylphosphine;
Epoxysilane KBM303 as a coupling agent
(manufactured by Shin-Etsu Chemical Co., Ltd.) double-layered part, 4 parts by weight of addition-type imide coated red phosphorus as a flame retardant, 1 part by weight of calcium stearate and Hoechst Wax E (manufactured by Hoechst Japan Co., Ltd.) as a mold release agent, parts by weight, As a filler, 75% of fused silica glass powder was added, and as a colorant, carbon black (manufactured by Cabot Corporation) was added and blended.
次いで、70〜80℃の8インチ径二本ロールで化分間
混練した後、粗粉砕して半導体封止用樹脂組成物を得た
。Next, the mixture was kneaded for a while using two 8-inch diameter rolls at 70 to 80°C, and then coarsely pulverized to obtain a resin composition for semiconductor encapsulation.
次いで該樹脂組成物は、IMビットD−RAMメモリL
SIの素子を充填した金型をセットしたトランスファ成
形機により、180℃、70kgf・cd、 1.5
分の条件で成形された。Next, the resin composition is applied to the IM bit D-RAM memory L.
180℃, 70kgf・cd, 1.5 using a transfer molding machine equipped with a mold filled with SI elements.
Molded under minute conditions.
得られた樹脂封止型半導体装置は、121℃。The temperature of the obtained resin-sealed semiconductor device was 121°C.
2気圧の過飽和水蒸気中(PCT)に投入された後、所
定時間毎に取り出し、LSIの電気的動作が正常である
か否かをチエツクした。After being placed in supersaturated steam (PCT) at 2 atm, the LSI was taken out at predetermined intervals to check whether the LSI's electrical operation was normal.
4.4’ 、4″L 、 4 −フタロシアニンテトラ
ミン系化合物と、テレフタルアルデヒドや、ヒドロキシ
テレフタルアルデヒドなどのジアルデヒド類あるいは又
はヒドロキシアルデヒド、ジヒドロキシジアルデヒド類
とを反応させて、次式〔式中、XI * XzはH,O
Hのいずれかで、同じであっても異なっていてもよい、
〕で表わされるフタロシアニンシッフ系重合体、および
/またはフタロシアニンヒドロキシシッフ系重合体が得
られた。この重合体は、導電性がドーパントなしで1〜
10−3Ω・個を示す。LSIの回路形成に有効である
。従来のAQ配線のような腐食による断線故障を排除で
きる。4.4',4''L,4-phthalocyaninetetramine compound and dialdehydes such as terephthalaldehyde and hydroxyterephthalaldehyde, or hydroxyaldehyde and dihydroxydialdehydes are reacted to form the following formula [wherein, XI * Xz is H, O
Any of H may be the same or different,
] A phthalocyanine Schiff-based polymer and/or a phthalocyanine hydroxy-Schiff-based polymer was obtained. This polymer has a conductivity of 1 to 1 without dopants.
Indicates 10-3Ω・pieces. It is effective for forming LSI circuits. Disconnection failures caused by corrosion, which occur in conventional AQ wiring, can be eliminated.
Claims (1)
式〔 I 〕 ▲数式、化学式、表等があります▼・・・・・・〔 I
〕 〔式中、Mは無、Cu、Pb、Fe、Ni、Coのいず
れかである。〕で表わされる4、4′、4″、4″′−
フタロシアニンテトラミン系化合物とを含むことを特徴
とするエポキシ樹脂組成物。 2、少なくとも、多官能エポキシ化合物〔A〕と、一般
式〔 I 〕 ▲数式、化学式、表等があります▼・・・・・・〔 I
〕 〔式中、Mは無、Cu、Pb、Fe、Ni、Coのいず
れかである。〕で表わされる4、4′、4″、4″′−
フタロシアニンテトラミン系化合物とを含むエポキシ樹
脂組成物で、少なくとも半導体素子の一部を封止・被覆
したことを特徴とする半導体装置。[Claims] 1. At least a polyfunctional epoxy compound [A] and a general formula [I] ▲There are mathematical formulas, chemical formulas, tables, etc.▼・・・・・・[I
] [In the formula, M is none, Cu, Pb, Fe, Ni, or Co. ] 4, 4', 4'', 4'''-
An epoxy resin composition comprising a phthalocyanine tetramine compound. 2. At least a polyfunctional epoxy compound [A] and a general formula [I] ▲There are mathematical formulas, chemical formulas, tables, etc.▼・・・・・・〔I
] [In the formula, M is none, Cu, Pb, Fe, Ni, or Co. ] 4, 4', 4'', 4'''-
1. A semiconductor device characterized in that at least a part of a semiconductor element is sealed and coated with an epoxy resin composition containing a phthalocyanine tetramine compound.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP17563186A JPS6333412A (en) | 1986-07-28 | 1986-07-28 | Epoxy resin composition and semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP17563186A JPS6333412A (en) | 1986-07-28 | 1986-07-28 | Epoxy resin composition and semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6333412A true JPS6333412A (en) | 1988-02-13 |
Family
ID=15999457
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP17563186A Pending JPS6333412A (en) | 1986-07-28 | 1986-07-28 | Epoxy resin composition and semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6333412A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0232115A (en) * | 1988-07-22 | 1990-02-01 | Sumitomo Bakelite Co Ltd | Epoxy resin composition for sealing semiconductor |
US5360840A (en) * | 1992-12-29 | 1994-11-01 | Hercules Incorporated | Epoxy resin compositions with improved storage stability |
JP2015007147A (en) * | 2013-06-24 | 2015-01-15 | 日立化成株式会社 | Element sealing epoxy resin molding material and electronic part device |
-
1986
- 1986-07-28 JP JP17563186A patent/JPS6333412A/en active Pending
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0232115A (en) * | 1988-07-22 | 1990-02-01 | Sumitomo Bakelite Co Ltd | Epoxy resin composition for sealing semiconductor |
US5360840A (en) * | 1992-12-29 | 1994-11-01 | Hercules Incorporated | Epoxy resin compositions with improved storage stability |
JP2015007147A (en) * | 2013-06-24 | 2015-01-15 | 日立化成株式会社 | Element sealing epoxy resin molding material and electronic part device |
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