JPS6351415A - Epoxy resin composition and semiconductor device covered and/or sealed with epoxy composition - Google Patents
Epoxy resin composition and semiconductor device covered and/or sealed with epoxy compositionInfo
- Publication number
- JPS6351415A JPS6351415A JP61195403A JP19540386A JPS6351415A JP S6351415 A JPS6351415 A JP S6351415A JP 61195403 A JP61195403 A JP 61195403A JP 19540386 A JP19540386 A JP 19540386A JP S6351415 A JPS6351415 A JP S6351415A
- Authority
- JP
- Japan
- Prior art keywords
- epoxy
- resin composition
- formula
- composition
- resin
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004593 Epoxy Substances 0.000 title claims abstract description 24
- 239000000203 mixture Substances 0.000 title claims abstract description 24
- 239000003822 epoxy resin Substances 0.000 title claims description 18
- 229920000647 polyepoxide Polymers 0.000 title claims description 18
- 239000004065 semiconductor Substances 0.000 title claims description 16
- 150000001875 compounds Chemical class 0.000 claims abstract description 21
- -1 butadiene diepoxide Chemical class 0.000 claims abstract description 17
- 239000000126 substance Substances 0.000 claims description 11
- 229920005989 resin Polymers 0.000 abstract description 17
- 239000011347 resin Substances 0.000 abstract description 17
- 239000003795 chemical substances by application Substances 0.000 abstract description 6
- 229920003986 novolac Polymers 0.000 abstract description 6
- 238000007789 sealing Methods 0.000 abstract description 6
- 238000000465 moulding Methods 0.000 abstract description 5
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N phenol group Chemical group C1(=CC=CC=C1)O ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 abstract description 4
- 230000035699 permeability Effects 0.000 abstract description 3
- ZFIVKAOQEXOYFY-UHFFFAOYSA-N Diepoxybutane Chemical compound C1OC1C1OC1 ZFIVKAOQEXOYFY-UHFFFAOYSA-N 0.000 abstract description 2
- 238000010521 absorption reaction Methods 0.000 abstract 1
- 239000011342 resin composition Substances 0.000 description 10
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 8
- 239000010410 layer Substances 0.000 description 8
- 239000003054 catalyst Substances 0.000 description 6
- GYZLOYUZLJXAJU-UHFFFAOYSA-N diglycidyl ether Chemical compound C1OC1COCC1CO1 GYZLOYUZLJXAJU-UHFFFAOYSA-N 0.000 description 5
- 239000011248 coating agent Substances 0.000 description 4
- 238000000576 coating method Methods 0.000 description 4
- 239000007822 coupling agent Substances 0.000 description 4
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 239000005011 phenolic resin Substances 0.000 description 4
- 239000000843 powder Substances 0.000 description 4
- 239000000243 solution Substances 0.000 description 4
- LJBWJFWNFUKAGS-UHFFFAOYSA-N 2-[bis(2-hydroxyphenyl)methyl]phenol Chemical compound OC1=CC=CC=C1C(C=1C(=CC=CC=1)O)C1=CC=CC=C1O LJBWJFWNFUKAGS-UHFFFAOYSA-N 0.000 description 3
- WSFSSNUMVMOOMR-UHFFFAOYSA-N Formaldehyde Chemical compound O=C WSFSSNUMVMOOMR-UHFFFAOYSA-N 0.000 description 3
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 239000006082 mold release agent Substances 0.000 description 3
- 229920001568 phenolic resin Polymers 0.000 description 3
- LLEASVZEQBICSN-UHFFFAOYSA-N 2-undecyl-1h-imidazole Chemical compound CCCCCCCCCCCC1=NC=CN1 LLEASVZEQBICSN-UHFFFAOYSA-N 0.000 description 2
- PLIKAWJENQZMHA-UHFFFAOYSA-N 4-aminophenol Chemical compound NC1=CC=C(O)C=C1 PLIKAWJENQZMHA-UHFFFAOYSA-N 0.000 description 2
- VTYYLEPIZMXCLO-UHFFFAOYSA-L Calcium carbonate Chemical compound [Ca+2].[O-]C([O-])=O VTYYLEPIZMXCLO-UHFFFAOYSA-L 0.000 description 2
- PEDCQBHIVMGVHV-UHFFFAOYSA-N Glycerine Chemical compound OCC(O)CO PEDCQBHIVMGVHV-UHFFFAOYSA-N 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- 125000001931 aliphatic group Chemical group 0.000 description 2
- 150000001412 amines Chemical class 0.000 description 2
- IISBACLAFKSPIT-UHFFFAOYSA-N bisphenol A Chemical compound C=1C=C(O)C=CC=1C(C)(C)C1=CC=C(O)C=C1 IISBACLAFKSPIT-UHFFFAOYSA-N 0.000 description 2
- CJZGTCYPCWQAJB-UHFFFAOYSA-L calcium stearate Chemical compound [Ca+2].CCCCCCCCCCCCCCCCCC([O-])=O.CCCCCCCCCCCCCCCCCC([O-])=O CJZGTCYPCWQAJB-UHFFFAOYSA-L 0.000 description 2
- 239000008116 calcium stearate Substances 0.000 description 2
- 235000013539 calcium stearate Nutrition 0.000 description 2
- 239000006229 carbon black Substances 0.000 description 2
- 239000003086 colorant Substances 0.000 description 2
- 238000006482 condensation reaction Methods 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
- 230000007797 corrosion Effects 0.000 description 2
- ZUOUZKKEUPVFJK-UHFFFAOYSA-N diphenyl Chemical compound C1=CC=CC=C1C1=CC=CC=C1 ZUOUZKKEUPVFJK-UHFFFAOYSA-N 0.000 description 2
- USIUVYZYUHIAEV-UHFFFAOYSA-N diphenyl ether Chemical compound C=1C=CC=CC=1OC1=CC=CC=C1 USIUVYZYUHIAEV-UHFFFAOYSA-N 0.000 description 2
- 238000005538 encapsulation Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000000945 filler Substances 0.000 description 2
- 239000003063 flame retardant Substances 0.000 description 2
- 239000005350 fused silica glass Substances 0.000 description 2
- 150000003949 imides Chemical class 0.000 description 2
- 238000004898 kneading Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229920000768 polyamine Polymers 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 239000009719 polyimide resin Substances 0.000 description 2
- 229920000642 polymer Polymers 0.000 description 2
- GHMLBKRAJCXXBS-UHFFFAOYSA-N resorcinol Chemical compound OC1=CC=CC(O)=C1 GHMLBKRAJCXXBS-UHFFFAOYSA-N 0.000 description 2
- 229910000077 silane Inorganic materials 0.000 description 2
- 238000001721 transfer moulding Methods 0.000 description 2
- IMNIMPAHZVJRPE-UHFFFAOYSA-N triethylenediamine Chemical compound C1CN2CCN1CC2 IMNIMPAHZVJRPE-UHFFFAOYSA-N 0.000 description 2
- RIOQSEWOXXDEQQ-UHFFFAOYSA-N triphenylphosphine Chemical compound C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1 RIOQSEWOXXDEQQ-UHFFFAOYSA-N 0.000 description 2
- 239000001993 wax Substances 0.000 description 2
- GFQYVLUOOAAOGM-UHFFFAOYSA-N zirconium(iv) silicate Chemical compound [Zr+4].[O-][Si]([O-])([O-])[O-] GFQYVLUOOAAOGM-UHFFFAOYSA-N 0.000 description 2
- VDFVNEFVBPFDSB-UHFFFAOYSA-N 1,3-dioxane Chemical compound C1COCOC1 VDFVNEFVBPFDSB-UHFFFAOYSA-N 0.000 description 1
- DDHYZBVBQZYMTO-UHFFFAOYSA-N 1-(dimethylamino)pentan-1-ol Chemical compound CCCCC(O)N(C)C DDHYZBVBQZYMTO-UHFFFAOYSA-N 0.000 description 1
- FBHPRUXJQNWTEW-UHFFFAOYSA-N 1-benzyl-2-methylimidazole Chemical compound CC1=NC=CN1CC1=CC=CC=C1 FBHPRUXJQNWTEW-UHFFFAOYSA-N 0.000 description 1
- MCMFEZDRQOJKMN-UHFFFAOYSA-N 1-butylimidazole Chemical compound CCCCN1C=CN=C1 MCMFEZDRQOJKMN-UHFFFAOYSA-N 0.000 description 1
- AXFVIWBTKYFOCY-UHFFFAOYSA-N 1-n,1-n,3-n,3-n-tetramethylbutane-1,3-diamine Chemical compound CN(C)C(C)CCN(C)C AXFVIWBTKYFOCY-UHFFFAOYSA-N 0.000 description 1
- RNFJDJUURJAICM-UHFFFAOYSA-N 2,2,4,4,6,6-hexaphenoxy-1,3,5-triaza-2$l^{5},4$l^{5},6$l^{5}-triphosphacyclohexa-1,3,5-triene Chemical compound N=1P(OC=2C=CC=CC=2)(OC=2C=CC=CC=2)=NP(OC=2C=CC=CC=2)(OC=2C=CC=CC=2)=NP=1(OC=1C=CC=CC=1)OC1=CC=CC=C1 RNFJDJUURJAICM-UHFFFAOYSA-N 0.000 description 1
- BPHYZRNTQNPLFI-UHFFFAOYSA-N 2,4,6-trihydroxytoluene Chemical compound CC1=C(O)C=C(O)C=C1O BPHYZRNTQNPLFI-UHFFFAOYSA-N 0.000 description 1
- AHDSRXYHVZECER-UHFFFAOYSA-N 2,4,6-tris[(dimethylamino)methyl]phenol Chemical compound CN(C)CC1=CC(CN(C)C)=C(O)C(CN(C)C)=C1 AHDSRXYHVZECER-UHFFFAOYSA-N 0.000 description 1
- PQAMFDRRWURCFQ-UHFFFAOYSA-N 2-ethyl-1h-imidazole Chemical compound CCC1=NC=CN1 PQAMFDRRWURCFQ-UHFFFAOYSA-N 0.000 description 1
- YTWBFUCJVWKCCK-UHFFFAOYSA-N 2-heptadecyl-1h-imidazole Chemical compound CCCCCCCCCCCCCCCCCC1=NC=CN1 YTWBFUCJVWKCCK-UHFFFAOYSA-N 0.000 description 1
- KXGFMDJXCMQABM-UHFFFAOYSA-N 2-methoxy-6-methylphenol Chemical compound [CH]OC1=CC=CC([CH])=C1O KXGFMDJXCMQABM-UHFFFAOYSA-N 0.000 description 1
- SIQHSJOKAUDDLN-UHFFFAOYSA-N 2-methyl-1-propylimidazole Chemical compound CCCN1C=CN=C1C SIQHSJOKAUDDLN-UHFFFAOYSA-N 0.000 description 1
- LXBGSDVWAMZHDD-UHFFFAOYSA-N 2-methyl-1h-imidazole Chemical compound CC1=NC=CN1 LXBGSDVWAMZHDD-UHFFFAOYSA-N 0.000 description 1
- QTWJRLJHJPIABL-UHFFFAOYSA-N 2-methylphenol;3-methylphenol;4-methylphenol Chemical compound CC1=CC=C(O)C=C1.CC1=CC=CC(O)=C1.CC1=CC=CC=C1O QTWJRLJHJPIABL-UHFFFAOYSA-N 0.000 description 1
- WMNWJTDAUWBXFJ-UHFFFAOYSA-N 3,3,4-trimethylheptane-2,2-diamine Chemical compound CCCC(C)C(C)(C)C(C)(N)N WMNWJTDAUWBXFJ-UHFFFAOYSA-N 0.000 description 1
- YJCSUBLMBRTUOX-UHFFFAOYSA-N 3,3,4-trimethylhexane-2,2-diamine Chemical compound CCC(C)C(C)(C)C(C)(N)N YJCSUBLMBRTUOX-UHFFFAOYSA-N 0.000 description 1
- SESYNEDUKZDRJL-UHFFFAOYSA-N 3-(2-methylimidazol-1-yl)propanenitrile Chemical compound CC1=NC=CN1CCC#N SESYNEDUKZDRJL-UHFFFAOYSA-N 0.000 description 1
- BVYPJEBKDLFIDL-UHFFFAOYSA-N 3-(2-phenylimidazol-1-yl)propanenitrile Chemical compound N#CCCN1C=CN=C1C1=CC=CC=C1 BVYPJEBKDLFIDL-UHFFFAOYSA-N 0.000 description 1
- SZUPZARBRLCVCB-UHFFFAOYSA-N 3-(2-undecylimidazol-1-yl)propanenitrile Chemical compound CCCCCCCCCCCC1=NC=CN1CCC#N SZUPZARBRLCVCB-UHFFFAOYSA-N 0.000 description 1
- HVMHLMJYHBAOPL-UHFFFAOYSA-N 4-[2-(7-oxabicyclo[4.1.0]heptan-4-yl)propan-2-yl]-7-oxabicyclo[4.1.0]heptane Chemical compound C1CC2OC2CC1C(C)(C)C1CC2OC2CC1 HVMHLMJYHBAOPL-UHFFFAOYSA-N 0.000 description 1
- RIAHASMJDOMQER-UHFFFAOYSA-N 5-ethyl-2-methyl-1h-imidazole Chemical compound CCC1=CN=C(C)N1 RIAHASMJDOMQER-UHFFFAOYSA-N 0.000 description 1
- YXALYBMHAYZKAP-UHFFFAOYSA-N 7-oxabicyclo[4.1.0]heptan-4-ylmethyl 7-oxabicyclo[4.1.0]heptane-4-carboxylate Chemical compound C1CC2OC2CC1C(=O)OCC1CC2OC2CC1 YXALYBMHAYZKAP-UHFFFAOYSA-N 0.000 description 1
- 239000004953 Aliphatic polyamide Substances 0.000 description 1
- ADAHGVUHKDNLEB-UHFFFAOYSA-N Bis(2,3-epoxycyclopentyl)ether Chemical compound C1CC2OC2C1OC1CCC2OC21 ADAHGVUHKDNLEB-UHFFFAOYSA-N 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- LZZYPRNAOMGNLH-UHFFFAOYSA-M Cetrimonium bromide Chemical compound [Br-].CCCCCCCCCCCCCCCC[N+](C)(C)C LZZYPRNAOMGNLH-UHFFFAOYSA-M 0.000 description 1
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- JOYRKODLDBILNP-UHFFFAOYSA-N Ethyl urethane Chemical compound CCOC(N)=O JOYRKODLDBILNP-UHFFFAOYSA-N 0.000 description 1
- WLLGXSLBOPFWQV-UHFFFAOYSA-N MGK 264 Chemical compound C1=CC2CC1C1C2C(=O)N(CC(CC)CCCC)C1=O WLLGXSLBOPFWQV-UHFFFAOYSA-N 0.000 description 1
- 229920000877 Melamine resin Polymers 0.000 description 1
- JLTDJTHDQAWBAV-UHFFFAOYSA-N N,N-dimethylaniline Chemical compound CN(C)C1=CC=CC=C1 JLTDJTHDQAWBAV-UHFFFAOYSA-N 0.000 description 1
- SJRJJKPEHAURKC-UHFFFAOYSA-N N-Methylmorpholine Chemical compound CN1CCOCC1 SJRJJKPEHAURKC-UHFFFAOYSA-N 0.000 description 1
- SECXISVLQFMRJM-UHFFFAOYSA-N N-Methylpyrrolidone Chemical compound CN1CCCC1=O SECXISVLQFMRJM-UHFFFAOYSA-N 0.000 description 1
- UEEJHVSXFDXPFK-UHFFFAOYSA-N N-dimethylaminoethanol Chemical compound CN(C)CCO UEEJHVSXFDXPFK-UHFFFAOYSA-N 0.000 description 1
- VBIIFPGSPJYLRR-UHFFFAOYSA-M Stearyltrimethylammonium chloride Chemical compound [Cl-].CCCCCCCCCCCCCCCCCC[N+](C)(C)C VBIIFPGSPJYLRR-UHFFFAOYSA-M 0.000 description 1
- AWMVMTVKBNGEAK-UHFFFAOYSA-N Styrene oxide Chemical compound C1OC1C1=CC=CC=C1 AWMVMTVKBNGEAK-UHFFFAOYSA-N 0.000 description 1
- GSEJCLTVZPLZKY-UHFFFAOYSA-N Triethanolamine Chemical compound OCCN(CCO)CCO GSEJCLTVZPLZKY-UHFFFAOYSA-N 0.000 description 1
- ZJCCRDAZUWHFQH-UHFFFAOYSA-N Trimethylolpropane Chemical compound CCC(CO)(CO)CO ZJCCRDAZUWHFQH-UHFFFAOYSA-N 0.000 description 1
- 229920001807 Urea-formaldehyde Polymers 0.000 description 1
- YKTSYUJCYHOUJP-UHFFFAOYSA-N [O--].[Al+3].[Al+3].[O-][Si]([O-])([O-])[O-] Chemical compound [O--].[Al+3].[Al+3].[O-][Si]([O-])([O-])[O-] YKTSYUJCYHOUJP-UHFFFAOYSA-N 0.000 description 1
- 230000002378 acidificating effect Effects 0.000 description 1
- 150000001299 aldehydes Chemical class 0.000 description 1
- 229920003231 aliphatic polyamide Polymers 0.000 description 1
- WNROFYMDJYEPJX-UHFFFAOYSA-K aluminium hydroxide Chemical compound [OH-].[OH-].[OH-].[Al+3] WNROFYMDJYEPJX-UHFFFAOYSA-K 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- SWLVFNYSXGMGBS-UHFFFAOYSA-N ammonium bromide Chemical compound [NH4+].[Br-] SWLVFNYSXGMGBS-UHFFFAOYSA-N 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 239000004760 aramid Substances 0.000 description 1
- 229920003235 aromatic polyamide Polymers 0.000 description 1
- 125000003118 aryl group Chemical group 0.000 description 1
- VZWMKHUMEIECPK-UHFFFAOYSA-M benzyl-dimethyl-octadecylazanium;bromide Chemical compound [Br-].CCCCCCCCCCCCCCCCCC[N+](C)(C)CC1=CC=CC=C1 VZWMKHUMEIECPK-UHFFFAOYSA-M 0.000 description 1
- AFBPHRMRBXPVPX-UHFFFAOYSA-M benzyl-dimethyl-tetradecylazanium;acetate Chemical compound CC([O-])=O.CCCCCCCCCCCCCC[N+](C)(C)CC1=CC=CC=C1 AFBPHRMRBXPVPX-UHFFFAOYSA-M 0.000 description 1
- OCBHHZMJRVXXQK-UHFFFAOYSA-M benzyl-dimethyl-tetradecylazanium;chloride Chemical compound [Cl-].CCCCCCCCCCCCCC[N+](C)(C)CC1=CC=CC=C1 OCBHHZMJRVXXQK-UHFFFAOYSA-M 0.000 description 1
- 239000004305 biphenyl Substances 0.000 description 1
- 235000010290 biphenyl Nutrition 0.000 description 1
- GLROGUSVUGSGPO-UHFFFAOYSA-N bis(3-methyl-7-oxabicyclo[4.1.0]heptan-4-yl) hexanedioate Chemical compound C1C2OC2CC(C)C1OC(=O)CCCCC(=O)OC1CC2OC2CC1C GLROGUSVUGSGPO-UHFFFAOYSA-N 0.000 description 1
- UORVGPXVDQYIDP-BJUDXGSMSA-N borane Chemical class [10BH3] UORVGPXVDQYIDP-BJUDXGSMSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 229910000019 calcium carbonate Inorganic materials 0.000 description 1
- 150000001244 carboxylic acid anhydrides Chemical class 0.000 description 1
- 150000001732 carboxylic acid derivatives Chemical class 0.000 description 1
- 150000001735 carboxylic acids Chemical class 0.000 description 1
- 238000006555 catalytic reaction Methods 0.000 description 1
- WOWHHFRSBJGXCM-UHFFFAOYSA-M cetyltrimethylammonium chloride Chemical compound [Cl-].CCCCCCCCCCCCCCCC[N+](C)(C)C WOWHHFRSBJGXCM-UHFFFAOYSA-M 0.000 description 1
- 239000007795 chemical reaction product Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 229930003836 cresol Natural products 0.000 description 1
- 229960002887 deanol Drugs 0.000 description 1
- QGBSISYHAICWAH-UHFFFAOYSA-N dicyandiamide Chemical compound NC(N)=NC#N QGBSISYHAICWAH-UHFFFAOYSA-N 0.000 description 1
- 235000014113 dietary fatty acids Nutrition 0.000 description 1
- DDXLVDQZPFLQMZ-UHFFFAOYSA-M dodecyl(trimethyl)azanium;chloride Chemical compound [Cl-].CCCCCCCCCCCC[N+](C)(C)C DDXLVDQZPFLQMZ-UHFFFAOYSA-M 0.000 description 1
- YIFWXQBNRQNUON-UHFFFAOYSA-M dodecyl(trimethyl)azanium;iodide Chemical compound [I-].CCCCCCCCCCCC[N+](C)(C)C YIFWXQBNRQNUON-UHFFFAOYSA-M 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- LDLDYFCCDKENPD-UHFFFAOYSA-N ethenylcyclohexane Chemical compound C=CC1CCCCC1 LDLDYFCCDKENPD-UHFFFAOYSA-N 0.000 description 1
- 239000003925 fat Substances 0.000 description 1
- 239000000194 fatty acid Substances 0.000 description 1
- 229930195729 fatty acid Natural products 0.000 description 1
- 150000004665 fatty acids Chemical class 0.000 description 1
- 239000012765 fibrous filler Substances 0.000 description 1
- SLGWESQGEUXWJQ-UHFFFAOYSA-N formaldehyde;phenol Chemical compound O=C.OC1=CC=CC=C1 SLGWESQGEUXWJQ-UHFFFAOYSA-N 0.000 description 1
- 229940083124 ganglion-blocking antiadrenergic secondary and tertiary amines Drugs 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 235000011187 glycerol Nutrition 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical class [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 description 1
- 230000002209 hydrophobic effect Effects 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 239000010445 mica Substances 0.000 description 1
- 229910052618 mica group Inorganic materials 0.000 description 1
- 239000012466 permeate Substances 0.000 description 1
- 150000002989 phenols Chemical class 0.000 description 1
- QCDYQQDYXPDABM-UHFFFAOYSA-N phloroglucinol Chemical compound OC1=CC(O)=CC(O)=C1 QCDYQQDYXPDABM-UHFFFAOYSA-N 0.000 description 1
- 229960001553 phloroglucinol Drugs 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 239000011253 protective coating Substances 0.000 description 1
- 150000003242 quaternary ammonium salts Chemical class 0.000 description 1
- 239000012495 reaction gas Substances 0.000 description 1
- 238000005096 rolling process Methods 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 230000000391 smoking effect Effects 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 229920003002 synthetic resin Polymers 0.000 description 1
- 239000000057 synthetic resin Substances 0.000 description 1
- 239000000454 talc Substances 0.000 description 1
- 229910052623 talc Inorganic materials 0.000 description 1
- 150000003512 tertiary amines Chemical class 0.000 description 1
- UKRDPEFKFJNXQM-UHFFFAOYSA-N vinylsilane Chemical compound [SiH3]C=C UKRDPEFKFJNXQM-UHFFFAOYSA-N 0.000 description 1
- 229910052845 zircon Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/85909—Post-treatment of the connector or wire bonding area
- H01L2224/8592—Applying permanent coating, e.g. protective coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
Landscapes
- Compositions Of Macromolecular Compounds (AREA)
- Epoxy Resins (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は、吸湿性、透湿性の小さい耐湿性にすぐれたエ
ポキシ樹脂組成物、及び、エポキシ樹脂組成物で被覆お
よび、又は封止成形し、高温高湿下に於いても信頼性の
高い動作が可能な樹脂封止型半導装置に関する。Detailed Description of the Invention [Field of Industrial Application] The present invention provides an epoxy resin composition with low hygroscopicity, low moisture permeability, and excellent moisture resistance, and an epoxy resin composition coated and/or encapsulated with the epoxy resin composition. The present invention relates to a resin-sealed semiconductor device that can operate with high reliability even under high temperature and high humidity conditions.
樹脂組成物で被覆および／又は封止成形した半導体装置
は、高温高湿下に放置すると、樹脂バルク中を吸湿、透
湿する水分や、樹脂と素子界面。If a semiconductor device coated and/or encapsulated with a resin composition is left under high temperature and high humidity, moisture will absorb and permeate through the resin bulk and the interface between the resin and the device.
リード線との隙間を通じて外部の水分が、パッケージ内
に浸入し、素子上の金属配線や、ポンディングパッド部
のＡＱが腐食して断線する問題がある。この対策として
、樹脂バルクの疎水化、樹脂と素子（リード線を含む）
界面の密着性、接着性の向上を目的としたカップリング
剤の利用、樹脂組成物素材の高純度化、あるいは、樹脂
硬化物の低応力化などが図られてきた。There is a problem in that external moisture infiltrates into the package through the gap with the lead wire, corroding the metal wiring on the element and the AQ of the bonding pad, and causing disconnection. As a countermeasure, we have made the resin bulk hydrophobic, and the resin and elements (including lead wires)
Efforts have been made to use coupling agents to improve interfacial adhesion and adhesion, to increase the purity of resin composition materials, and to reduce stress in cured resin products.
しかし、樹脂被覆および／または樹脂封止型半導体装置
は、より高い信頼性が要求される分野への適用拡大が進
んでおり、従来の手法では、これに対処するには充分と
は云えず、更に耐湿性のすぐれた樹脂組成物、並びに樹
脂組成物で、被覆封止成形することにより、半導体装置
の高信頼度化の達成が求められている。However, the application of resin-coated and/or resin-sealed semiconductor devices is expanding to fields that require higher reliability, and conventional methods cannot be said to be sufficient to deal with this. Furthermore, there is a need to achieve higher reliability of semiconductor devices by using resin compositions with excellent moisture resistance and by coating and sealing molding with resin compositions.
本発明の目的は、吸湿性、透湿性の／、ｂさい耐湿性に
すぐれたエポキシ樹脂組成物、並びにエポキシ樹脂組成
物で被覆、および／または封止成形してなる高温高湿下
でも信頼性の高い動作が可能な樹脂封止型半導体装置を
提供することにある。The object of the present invention is to provide an epoxy resin composition with excellent hygroscopicity, moisture permeability, and moisture resistance, and to provide reliability even under high temperature and high humidity conditions by coating and/or sealing with the epoxy resin composition. An object of the present invention is to provide a resin-sealed semiconductor device capable of high performance.
」二記目的は１次のエポキシ樹脂組成物、並びにエポキ
シ樹脂組成物で被覆、封止成形した樹脂被覆、封止型半
導体装置により、達成される。その要旨は、
（１）多官能エポキシ化合物（Ａ）と、一般式（Ｉ）Ｈ
ａ
ＣＨ３
−ＣＨ２−、−〇−、−ｃｏ ＋、−ｃｏｏ−。The second objective is achieved by a primary epoxy resin composition, a resin coating and a sealed semiconductor device coated and sealed with the epoxy resin composition. The gist is as follows: (1) polyfunctional epoxy compound (A) and general formula (I)H
a CH3 -CH2-, -〇-, -co +, -coo-.
ｌ
−Ｓ −、−Ｓ ＯＺ 、 Ｓ ｉ−○−Ｃｙｓ
ｒｙｚはＨ９ｚ
ＣＨａ＋ Ｃ２Ｈ５１０） ）の中のいずれかであり、
同じであっても異なっていてもよい。）の中のいずれか
である。〕で表わされるフルオロイシド系化合物ＣＢ）
を含むことを特徴とするエポキシ樹脂組成物。l -S -, -SOZ, S i-○-Cys
ryz is one of H9z CHa+ C2H510),
They may be the same or different. ). ] Fluoroid compound CB)
An epoxy resin composition comprising:
（２）多官能エポキシ化合物（Ａ）と、一般式（Ｉ）Ｈ
ａ
Ｈａ
−ＣＨ２−、−０−、−Ｇ Ｏ−、−Ｃ００−９−５＋
、−３Ｏｚ＋、−ｓｉ −ｏ −（ｙｘ＋ｙｚはＨ１Ｃ
Ｈ３，Ｃ２Ｈ１１，−Ｃ＞の中のいずれかであり、同じ
であっても異なっていてもよい。）の中のいずれかであ
る。）のいずれかである。〕で表わされるフルオロイミ
ド系化合物（Ｂ）を含むエポキシ樹脂組成物で、半導体
素子および／またはリード線の少なくとも一部を被覆、
封止成形してなることを特徴とする半導体装置である。(2) Polyfunctional epoxy compound (A) and general formula (I)H
a Ha -CH2-, -0-, -G O-, -C00-9-5+
, -3Oz+, -si -o - (yx+yz is H1C
H3, C2H11, -C>, and may be the same or different. ). ). ] Covering at least a portion of the semiconductor element and/or the lead wire with an epoxy resin composition containing a fluoroimide compound (B) represented by
This is a semiconductor device characterized by being formed by sealing molding.
本発明において多官能エポキシ化合物（Ａ）としては、
例えば、ビスフェノールＡのジグリシジルエーテル、ブ
タジエンジエポキサイド、３，４−エポキシシクロヘキ
シルメチル−（３，４−エポキシ）シクロヘキサンカル
ボキシレート、ビニルシクロヘキサンジオキシド、４，
４′−ジ（１゜２−エポキシエチル）ジフェニルエーテ
ル、４゜４’ −（１，２−エポキシエチル）ビフェニ
ル、２．２−ビス（３，４−エポキシシクロヘキシル）
プロパン、レゾルシンのグリシジルエーテル、フロログ
ルシンのジグリシジルエーテル、メチルフロログルシン
のジグリシジルエーテル、ビス−（２，３−エポキシシ
クロペンチル）エーテル、２− （３，４−エポキシ）
−シクロヘキサン−５゜５スピロ（３，４−エポキシ）
−シクロヘキサンｍ−ジオキサン、ビス−（３，４−エ
ポキシ−６−メチルシクロヘキシル）アジペート、Ｎ、
Ｎ’−ｍ−フェニレンビス（４，５−エポキシ−１゜２
−シクロヘキサン）ジカルボキシイミドなどの三官能の
エポキシ化合物、パラアミノフェノールのトリグリシジ
ルエーテル、ポリアリルグリシジルエーテル、１，３．
５−ト（１，２−エポキシエチル）ベンゼン、２．２’
、４．４’−テトラグリシドキシベンゾフェノン、テ
トラグリシドキシテトラフェニルエタン、フェノールホ
ルムアルデヒドノボラックのポリグリシジルエーテル、
グリセリンのトリグリシジルエーテル、トリメチロール
プロパンのトリグリシジルエーテルなど三官能以上のエ
ポキシ化合物が用いられる。In the present invention, the polyfunctional epoxy compound (A) includes:
For example, diglycidyl ether of bisphenol A, butadiene diepoxide, 3,4-epoxycyclohexylmethyl-(3,4-epoxy)cyclohexane carboxylate, vinylcyclohexane dioxide, 4,
4'-di(1゜2-epoxyethyl)diphenyl ether, 4゜4'-(1,2-epoxyethyl)biphenyl, 2,2-bis(3,4-epoxycyclohexyl)
Propane, glycidyl ether of resorcinol, diglycidyl ether of phloroglucin, diglycidyl ether of methylphloroglucin, bis-(2,3-epoxycyclopentyl) ether, 2-(3,4-epoxy)
-Cyclohexane-5゜5spiro(3,4-epoxy)
-cyclohexane m-dioxane, bis-(3,4-epoxy-6-methylcyclohexyl)adipate, N,
N'-m-phenylenebis(4,5-epoxy-1゜2
-cyclohexane) dicarboximide, triglycidyl ether of para-aminophenol, polyallyl glycidyl ether, 1,3.
5-(1,2-epoxyethyl)benzene, 2.2'
, 4.4'-tetraglycidoxybenzophenone, tetraglycidoxytetraphenylethane, polyglycidyl ether of phenol formaldehyde novolac,
Epoxy compounds having trifunctional or higher functionality such as triglycidyl ether of glycerin and triglycidyl ether of trimethylolpropane are used.
また、次式
％式％
一 二
工 （９）
で表わされるトリス（ヒドロオキシフェニル）メタンベ
ースのエポキシ化合物がある。There are also tris(hydroxyphenyl)methane-based epoxy compounds represented by the following formula:
次に、フェノールとアルデヒドとの縮合反応物（Ｂ）は
、各種のフェノール系化合物とアルデヒド系化合物とを
、Ｍ性もしくは塩基性触媒の存在下で、付加縮合反応さ
せることにより生成される樹脂類が使用され、特にフェ
ノール、クレゾールなどとホルムアルデヒドとを用いて
、酸性触媒反応によって合成されるノボラック樹脂が有
用である。Next, the condensation reaction product (B) of phenol and aldehyde is a resin produced by addition condensation reaction of various phenol compounds and aldehyde compounds in the presence of an M-type or basic catalyst. In particular, novolac resins synthesized by acidic catalytic reaction using phenol, cresol, etc. and formaldehyde are useful.
また、本発明において、一般式（Ｉ）で表わされるフル
オロイミド系化合物には、例えば、Ｈａ
ＣＦａ
などがある。Further, in the present invention, examples of the fluoroimide compound represented by the general formula (I) include Ha CFa.
また、本発明のこれらのエポキシ樹脂組成物には硬化剤
が併用される。それらは、垣内弘著；エポキシ樹脂（昭
和４５年９月発行）１０９〜１４９ページ、Ｌｅｅ、Ｎ
ｅｖｉｌｌｃ著： Ｅｐｏｘｙ Ｒｅ５ｉｎｓ （Ｍｅ
Ｇｒａｙ−Ｈｉｌｌ Ｂｏｏｋ Ｃｏｍｐａｎｙ Ｉ
ｎｃ、Ｎｅｗ Ｙｏｒｋ、１９５７年発行）６３〜１４
１ページ、Ｐ、Ｅ、Ｂｒｕｎｌｓ著； Ｅｐｏｘｙ Ｒ
ｅ−ｇｉｎｓ Ｔｅｃｈｎｏｌｏｇｙ （Ｉｎｔｅｒｇ
ｅｉｅｎｃａ Ｐｕｂｋｉｓｈｅｒｄ、ＮｅｗＹｉｒｋ
、 １９６８年発行）４５〜１１１ページなどに記載
の化合物であり１例えば、脂肪族ポリアミン、芳香族ポ
リアミン、第二および第三アミンを含むアミン類、カル
ボン酸類、 （トリメリット酸トリグリセライド（リカ
レジエ・ＴＭＴＡなど）を含む）カルボン酸無水物類、
脂肪族および芳香族ポリアミドオリゴマーおよびポリマ
ー類、三フッ化ホウ素−アミンコンプレックス類、フェ
ノール樹脂、メラミン樹脂、ウレア樹脂、ウレタンｔＸ
脂などの合成樹脂初期縮合物類、その他、ジシアンジア
ミド、カルボン酸ヒドラジド、ポリアミノマレイミド頚
などがある。Further, a curing agent is used in combination with these epoxy resin compositions of the present invention. They are written by Hiroshi Kakiuchi; Epoxy Resin (published September 1972), pages 109-149, Lee, N.
Written by: Epoxy Re5ins (Me
Gray-Hill Book Company I
nc, New York, 1957) 63-14
Page 1, by P.E. Brunls; Epoxy R
e-gins Technology (Interg
eienca Pubkisherd, New York
, published in 1968), pages 45 to 111. Examples include aliphatic polyamines, aromatic polyamines, amines including secondary and tertiary amines, carboxylic acids, etc.) carboxylic acid anhydrides,
Aliphatic and aromatic polyamide oligomers and polymers, boron trifluoride-amine complexes, phenolic resins, melamine resins, urea resins, urethane tX
Initial condensates of synthetic resins such as fats, and others include dicyandiamide, carboxylic acid hydrazide, and polyaminomaleimide.
これら硬化剤は、用途、目的に応じて一種以上を使用す
ることが出来る。One or more types of these curing agents can be used depending on the use and purpose.
特に、フェノールボラック樹脂は、硬化樹脂の金属イン
サートに対する密着性、成形時の作業性などの点から、
半導体封止用材料の硬化剤成分として好適である。In particular, phenol borac resin is highly effective in terms of adhesion of the cured resin to metal inserts and workability during molding.
It is suitable as a curing agent component for semiconductor encapsulation materials.
この樹脂組成物には、エポキシ化合物とノボラック型フ
ェノール樹脂の硬化反応を促進する効果が知られている
公知の触媒を使用することが出来る。For this resin composition, a known catalyst known to be effective in accelerating the curing reaction between an epoxy compound and a novolac type phenol resin can be used.
さらに、本発明では、エポキシ樹脂組成物の硬化反応を
促進する目的で各種の触媒を添加することができる。こ
の触媒は、例えば、トリエタノールアミン、テトラメチ
ルブタンジアミン、テトラメチルペンタンジアミン、テ
トラメチルヘキサンジアミン、トリエチレンジアミン及
びジメチルアニリン等の第三級アミン、ジメチルアミノ
エタノール及びジメチルアミノペンタノール等のオキシ
アルキルアミンならびにトリス（ジメチルアミノメチル
）フェノール及びメチルモルホリン等のアミン類を適用
することができる。Furthermore, in the present invention, various catalysts can be added for the purpose of promoting the curing reaction of the epoxy resin composition. The catalyst can be used, for example, with tertiary amines such as triethanolamine, tetramethylbutanediamine, tetramethylpentanediamine, tetramethylhexanediamine, triethylenediamine and dimethylaniline, oxyalkylamines such as dimethylaminoethanol and dimethylaminopentanol. and amines such as tris(dimethylaminomethyl)phenol and methylmorpholine.
又、同じ目的で、触媒として、例えば、セチルトリメチ
ルアンモニウムブロマイド、セチルトリメチルアンモニ
ウムクロライド、ドデシルトリメチルアンモニウムアイ
オダイド、トリメチルドデシルアンモニウムクロライド
、ベンジルジメチルテトラデシルアンモニウムクロライ
ド、ペンジルメチルパルミチルアンモニウムクロライド
、アリルドデシルトリメチルアンモニウムブロマイド、
ベンジルジメチルステアリルアンモニウムブロマイド、
ステアリルトリメチルアンモニウムクロライド及びベン
ジルジメチルテトラデシルアンモニウムアセテート等の
第四級アンモニウム塩を適用することができ、更には、
２−ウンデシルイミダゾール、２−メチルイミダゾール
、２−エチルイミダゾール、２−ヘプタデシルイミダゾ
ール、２−メチル−４−エチルイミダゾール、１−ブチ
ルイミダゾール、１−プロピル−２−メチルイミダゾー
ル、１−ベンジル−２−メチルイミダゾール、１−シア
ノエチル−２−メチルイミダゾール、１−シアノエチル
−２−ウンデシルイミダゾール、１−シアノエチル−２
−フェニルイミダゾール。For the same purpose, as a catalyst, for example, cetyltrimethylammonium bromide, cetyltrimethylammonium chloride, dodecyltrimethylammonium iodide, trimethyldodecylammonium chloride, benzyldimethyltetradecylammonium chloride, pendylmethylpalmitylammonium chloride, allyldodecyltrimethyl ammonium bromide,
benzyldimethylstearylammonium bromide,
Quaternary ammonium salts such as stearyltrimethylammonium chloride and benzyldimethyltetradecylammonium acetate can be applied, and furthermore,
2-undecylimidazole, 2-methylimidazole, 2-ethylimidazole, 2-heptadecylimidazole, 2-methyl-4-ethylimidazole, 1-butylimidazole, 1-propyl-2-methylimidazole, 1-benzyl-2 -Methylimidazole, 1-cyanoethyl-2-methylimidazole, 1-cyanoethyl-2-undecylimidazole, 1-cyanoethyl-2
-Phenylimidazole.
１−アジン−２−メチルイミダゾール及び１−アジン−
２−ウンデシルイミダゾール等のイミダゾール化合物、
あるいは、トリフェニルホスフィンテトラフェニルボレ
ート、トリエチルアミンテトラフェニルボレート、Ｎ−
メチルモルホリンテトラフェニルボレート、ピリジンテ
トラフェニルボレート２−エチル−４−メチルイミダゾ
ールテトラフェニルボレート及び２−エチル−１，４−
ジメチルイミダゾールテトラフェニルボレート等のテト
ラフェニルボロン塩等が有用である。1-Azine-2-methylimidazole and 1-azine-
imidazole compounds such as 2-undecylimidazole,
Alternatively, triphenylphosphine tetraphenylborate, triethylamine tetraphenylborate, N-
Methylmorpholine tetraphenylborate, pyridine tetraphenylborate 2-ethyl-4-methylimidazole tetraphenylborate and 2-ethyl-1,4-
Tetraphenylboron salts such as dimethylimidazole tetraphenylborate are useful.
上記の触媒はその二種以上を併用することもでき、その
量は、多官能エポキシ化合物（Ａ）１００に対して、重
量比で、０．０１〜２０の範囲で用いればよい。Two or more of the above catalysts can also be used in combination, and the amount thereof may be in the range of 0.01 to 20 in weight ratio per 100 parts of the polyfunctional epoxy compound (A).
また、本発明のエポキシ樹脂組成物には、その用途、使
用目的に応じて、例えば、炭酸カルシウム、シリカ、ア
ルミナ、チタニア、水酸化アルミニウム、ケイ酸アルミ
ニウム、ケイ酸ジルコニウム、ジルコン、ガラス、タル
ク、マイカ、黒鉛、アルミニウム、銅、鉄などの粉末や
短繊維状充填剤、脂肪酸及びワックス類等の離型剤、エ
ポキシシラン、ビニルシラン、ボラン系化合物及びアル
キルチタネート系化合物等のカップリング剤、そして、
さらに、アンチモンやリンの化合物及びハロゲン含有化
合物のような難燃剤を加えることができる。The epoxy resin composition of the present invention may also include, for example, calcium carbonate, silica, alumina, titania, aluminum hydroxide, aluminum silicate, zirconium silicate, zircon, glass, talc, Powders and short fibrous fillers such as mica, graphite, aluminum, copper, and iron, mold release agents such as fatty acids and waxes, coupling agents such as epoxy silane, vinyl silane, borane compounds, and alkyl titanate compounds, and
Additionally, flame retardants such as antimony and phosphorous compounds and halogen-containing compounds can be added.
本発明の樹脂組成物は、これらの成分をロール。The resin composition of the present invention is made by rolling these components.
ニーダ、コニーダ、またはヘンシェルミキサ等を用いて
加熱（約７ｏ〜８０’Ｃ）混練することによって調製さ
れる。また、成分化合物が固体である場合には、榔粉化
した後、混合するトライブレンド法によって配合するこ
ともできる。得られた組成物は約１５０〜２００℃の温
度で短時間に硬化できる。It is prepared by kneading with heating (approximately 7°C to 80'C) using a kneader, co-kneader, Henschel mixer, or the like. In addition, when the component compounds are solid, they can also be blended by a tri-blend method in which they are ground into powder and then mixed. The resulting composition can be cured in a short period of time at temperatures of about 150-200°C.
多官能エポキシ化合物として、トリス（ヒドロキシフェ
ニル）メタンベースの多官能エポキシ化合物、Ｘ Ｄ
−９０５３（エポキシ当量、２２５、ダウ・ケミカル社
製）百重量部
硬化剤として、ノボラック型フェノール樹脂オロイド系
化合物として。As a polyfunctional epoxy compound, a tris(hydroxyphenyl)methane-based polyfunctional epoxy compound, X D
-9053 (epoxy equivalent, 225, manufactured by Dow Chemical Company) 100 parts by weight As a curing agent, as a novolak type phenolic resin oroid compound.
（Ｆ−Ｉｍｉｄｅ Ａ） を、第１表に記した所定量。(F-Imide A) is the prescribed amount listed in Table 1.
硬化促進剤として、トリフェニルホスフィン二重量部、
カップリング剤として、エポキシシランＫＢＭ３０３
（信越化学社！！Ｉり二重置部５難燃剤として、付加型
イミドコート赤すン四重量部、離型剤として、ステアリ
ン酸カルシウム−重量部とへキスｌ−ワックスＥ（ヘキ
ストジャパン社製）−重量部、充填材として、溶融石英
ガラス粉七十五景況パーセント、着色剤として、カーボ
ンブラツク（キャボット社製）二重置部を添加配合した
。As a curing accelerator, a double portion of triphenylphosphine,
Epoxysilane KBM303 as a coupling agent
(Shin-Etsu Chemical Co., Ltd.) 5 parts by weight of addition-type imide-coated Akasun as a flame retardant, 4 parts by weight of calcium stearate and Hekis l-wax E (manufactured by Hoechst Japan Co., Ltd.) as a mold release agent. ) - parts by weight, 75 percent of fused silica glass powder was added as a filler, and carbon black (manufactured by Cabot) was added as a coloring agent.
（Ｆ−Ｉｎ＋ｉｄｅ Ｃ）
ＣＦａ
（ＣＦｚＣＦｚ）ａＣＦ
ＣＦａ
（Ｆ−５ｉ ｌｍ１ｄｅ）
次いで、７０〜８５℃の８インチ径二本ロールで化分間
混練した後、粗粉砕して半導体封止用樹脂組成物を得た
。(F-In+ide C) CFa (CFzCFz)aCF CFa (F-5ilm1de) Next, after kneading for a while with two 8-inch diameter rolls at 70 to 85°C, the mixture was coarsely ground to obtain a resin composition for semiconductor encapsulation. Obtained.
次いで、樹脂組成物は、ビットＤ−ＲＡＭメモリＬＳＩ
の素子を充填した金型をセットしたトランスファ成形機
により、１８０℃、 ７０ｋｇｆ／ａ＋ｆ。Next, the resin composition is applied to a bit D-RAM memory LSI.
A transfer molding machine equipped with a mold filled with elements was used at 180℃ and 70kgf/a+f.
１．５分の条件で成形された。It was molded for 1.5 minutes.
得られた樹脂封止型半導体装置は、１２１℃。The temperature of the obtained resin-sealed semiconductor device was 121°C.
二気圧の過飽和水蒸気中（ＰＣＴ）に投入された後、所
定時間毎に取り出し、ＬＳＩの電気的動作が正常である
か否かをチェックした。After being placed in supersaturated steam (PCT) at two atmospheres of pressure, the LSI was taken out at predetermined time intervals to check whether the LSI's electrical operation was normal.
５ｏｏｌｕＱの三角フラスコ中に、２５０ｍＱのＮ−メ
チルピロリドンを採り、次式
％式％）
で表わされるフルオロイミド系化合物２５重量部を加え
て加熱撹拌して溶解した。250 mQ of N-methylpyrrolidone was placed in a 5ooluQ Erlenmeyer flask, and 25 parts by weight of a fluoroimide compound represented by the following formula (%) was added and dissolved by heating and stirring.
次いで、ＩＭビットＤ−ＲＡＭメモリＬＳＩ（１８ピン
）の素子及びリード線（ワイヤボンディング部を含む）
の上に、上記溶液を滴下した。Next, the elements and lead wires (including wire bonding parts) of the IM bit D-RAM memory LSI (18 pins)
The above solution was dropped onto the solution.
その後、１００℃で一時間、２００℃で一時間、２５０
℃で三十分加熱を続け、素子上に４５μｍの厚さくＩ５
μｍ）の被覆膜を得た。次いで、エポキシ樹脂系の封止
用樹脂組成物で、メモリ用ＬＳＩ素子を、トランスファ
成形により封止成形（１８０℃、７０ｋｇｆ／ａ（，１
，５分成形） しＣ樹脂封止型半導体装置を得た。第１
図にその装置を示す。図中１はリード線、２は半導体素
子、３は保護被覆樹脂、６はエポキシ系封止用樹脂であ
る。After that, 1 hour at 100℃, 1 hour at 200℃, 250℃
Continue heating at ℃ for 30 minutes to form a 45 μm thick film on the device.
A coated film of .mu.m) was obtained. Next, the memory LSI element was encapsulated using an epoxy resin-based encapsulating resin composition by transfer molding (180°C, 70 kgf/a (,1
, 5 minutes molding) to obtain a C resin-sealed semiconductor device. 1st
The device is shown in the figure. In the figure, 1 is a lead wire, 2 is a semiconductor element, 3 is a protective coating resin, and 6 is an epoxy sealing resin.
メモリ用ＬＳＩ５０ケについて、実施例１と同じ条件で
耐湿信頼性を評価した。その結果、ＰＣＴ二千時間放置
では、ＡＩ２配線の腐食による断線故障は発生しなかっ
た。ＰＣＴ二千五百時間後では、二層のＬＳＩにＡＱＩ
Ｉｉ！線の腐食による断線故障が見られた。The moisture resistance reliability of 50 memory LSIs was evaluated under the same conditions as in Example 1. As a result, when the PCT was left unused for 2,000 hours, no disconnection failure due to corrosion of the AI2 wiring occurred. After 2,500 hours of PCT, the AQI of the two-layer LSI
Ii! A disconnection failure due to wire corrosion was observed.
−封止用エポキシ樹脂組成物の作成 −多官能エポキシ
化合物として、トリス（ヒドロキシフェニル）メタンベ
ースの多官能エポキシ化合物Ｘ Ｄ −９０５３（ダウ
、ケミカル社製、エポキシ当量、２２５）百重量部、硬
化剤として、ノボラック型フェノール樹脂（日立化成社
製、転化点８３℃）五十五重量部、硬化促進剤として、
トリエチルアミンテトラフェニルボレート（ＴＥＡ−Ｋ
）三重置部、カップリング剤として、エポキシシランＫ
ＢＭ３０３ （信越化学社製）二重置部、Ｎ燻材として
、付加型イミドコート赤すン五重量部、離型剤として、
ステアリン酸カルシウム−重量部とΔキストワツクスＥ
（へキストジャパン社製）−重量部、充填材として、溶
融石英ガラス粉４９０重量部１着色材として、カーボン
ブラック（キャボット社製）二重置部を添加配合した。- Creation of epoxy resin composition for sealing - As a polyfunctional epoxy compound, tris(hydroxyphenyl)methane-based polyfunctional epoxy compound As an agent, 55 parts by weight of novolac type phenol resin (manufactured by Hitachi Chemical Co., Ltd., conversion point 83 ° C.), as a curing accelerator,
Triethylamine tetraphenylborate (TEA-K
) Triple placement part, epoxy silane K as coupling agent
BM303 (manufactured by Shin-Etsu Chemical Co., Ltd.) double mounting part, N smoking material, 5 parts by weight of addition type imide coat red sun, as mold release agent,
Calcium stearate - parts by weight and ΔKistwax E
(manufactured by Hoechst Japan Co., Ltd.) - 490 parts by weight of fused silica glass powder as a filler, 1 part by weight of carbon black (manufactured by Cabot Corporation) as a coloring agent, was added and blended.
次いで、７０〜８５℃の８インチ径二本ロールで七分間
混練した後、粗粉砕して樹脂組成物を得た。Next, the mixture was kneaded for 7 minutes using two 8-inch diameter rolls at 70 to 85°C, and then coarsely ground to obtain a resin composition.
月１曝Ｍλ
次に、フルオロイミド系化合物として、Ｆ−Ｉｍｉ−ｄ
ｅ Ｂ重合体をトルエンに溶解して、−重量％の樹脂溶
液を調製した。この溶液を、多層（二層）配線絶縁膜と
して用いた場合の素子構成を、第２図。Monthly exposure Mλ Next, as a fluoroimide compound, F-Imi-d
e B polymer was dissolved in toluene to prepare -wt% resin solution. FIG. 2 shows the device configuration when this solution is used as a multilayer (two-layer) wiring insulating film.
第３図に示した。It is shown in Figure 3.
素子の構成は、Ｓｉ素子基板上に、５ｉＯｚ絶縁層、ポ
リシリコン層、更に第一層目のアルミニウム配線４−１
を形成した後に、樹脂被膜材料を塗布（スピンナー使用
）、焼付け（２５０℃、６０分間）した３−１のち、ポ
ジレジストを塗布して、マルホールのパターニングを行
なった。次いで、ＣＦ４ ０ｚを反応ガスとしてプラズ
マエッチした。The device consists of a Si device substrate, a 5iOz insulating layer, a polysilicon layer, and a first layer of aluminum wiring 4-1.
After forming 3-1, a resin coating material was applied (using a spinner) and baked (250° C. for 60 minutes), and then a positive resist was applied and patterned with multi-holes. Next, plasma etching was performed using CF4Oz as a reaction gas.
次いでｏ２を反応ガスとするプラズマアッシャ−によっ
てポジレジストを除去した。The positive resist was then removed using a plasma asher using O2 as a reactive gas.
次いで、第二層目のアルミニウム配線４−ｆｆを形成し
た後、さらに、上記樹脂液を塗布、焼付け（前記条件と
同じ）した６３−■層
なお、第３図は、第二層目の被覆樹脂として、ポリイミ
ド樹脂（日立化成製Ｐ Ｉ Ｑ）を用いた場合（四層）
を示した。図中５はポリイミド樹脂、７は酸化膜。Next, after forming the second layer of aluminum wiring 4-ff, the resin liquid was further applied and baked (under the same conditions as above) to form a 63-■ layer. When polyimide resin (PIQ manufactured by Hitachi Chemical) is used as the resin (four layers)
showed that. In the figure, 5 is a polyimide resin, and 7 is an oxide film.
〔発明の効果〕
本発明によれば、高温、高湿下でも信頼性の高い動作が
可能な樹脂封止型半導体装置を提供することができる。[Effects of the Invention] According to the present invention, it is possible to provide a resin-sealed semiconductor device that can operate with high reliability even under high temperature and high humidity.
第１図は、本発明の一実施例の樹脂封止型メモリＬＳＩ
の縦断面図、第２図は、第３図は、ＬＳＩの層間配線絶
縁膜についての素子構成断面図である。
１・・・リード線。FIG. 1 shows a resin-sealed memory LSI according to an embodiment of the present invention.
FIG. 2 and FIG. 3 are longitudinal cross-sectional views of the device structure of the interlayer wiring insulating film of the LSI. 1... Lead wire.
Claims (1)
数式、化学式、表等があります▼〔 I 〕 〔式中、Ｒは▲数式、化学式、表等があります▼、▲数
式、化学式、表等があります▼（Ｘは−、 −ＣＨ＿２−、−Ｏ−、−ＣＯ−、−ＣＯＯ−、−Ｓ−
、−ＳＯ＿２−、−Ｓｉ−Ｏ−（ｙはＨ、ＣＨ＿３、Ｃ
＿２Ｈ＿６、▲数式、化学式、表等があります▼））の
中のいずれかである。〕で表わされるフルオロイミド系
化合物〔Ｂ〕を含むことを特徴とするエポキシ樹脂組成
物。 ２、多官能エポキシ化合物（Ａ）と、一般式〔 I 〕▲
数式、化学式、表等があります▼・・・〔 I 〕 〔式中、Ｒは▲数式、化学式、表等があります▼、▲数
式、化学式、表等があります▼（Ｘは−、 −ＣＨ＿２−、−Ｏ−、−ＣＯ−、−ＣＯＯ−、−Ｓ−
、−ＳＯ＿２−、▲数式、化学式、表等があります▼（
ｙ＿１、ｙ＿２はＨ、ＣＨ＿３、Ｃ＿２Ｈ＿６、▲数式
、化学式、表等があります▼の中のいずれかであり、同
じであつても異なつていてもよい。））〕で表わされる
フルオロイミド系化合物〔Ｂ〕を含むことを特徴とする
エポキシ樹脂組成物で、被覆・封止した半導体装置。[Claims] 1. Polyfunctional epoxy compound (A) and general formula [I]▲
There are mathematical formulas, chemical formulas, tables, etc. ▼ [I] [In the formula, R is ▲ There are mathematical formulas, chemical formulas, tables, etc. ▼, ▲ There are mathematical formulas, chemical formulas, tables, etc. ▼ (X is -, -CH_2-, -O -, -CO-, -COO-, -S-
, -SO_2-, -Si-O- (y is H, CH_3, C
_2H_6, ▲There are mathematical formulas, chemical formulas, tables, etc.▼)). ] An epoxy resin composition comprising a fluoroimide compound [B] represented by [B]. 2. Polyfunctional epoxy compound (A) and general formula [I]▲
There are mathematical formulas, chemical formulas, tables, etc. ▼... [I] [In the formula, R is ▲ There are mathematical formulas, chemical formulas, tables, etc. ▼, ▲ There are mathematical formulas, chemical formulas, tables, etc. ▼ (X is -, -CH_2- , -O-, -CO-, -COO-, -S-
, -SO_2-, ▲There are mathematical formulas, chemical formulas, tables, etc.▼(
y_1 and y_2 are either H, CH_3, C_2H_6, ▲numerical formula, chemical formula, table, etc.▼, and may be the same or different. ))] A semiconductor device coated and sealed with an epoxy resin composition characterized by containing a fluoroimide compound [B] represented by [B].
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61195403A JPS6351415A (en) | 1986-08-22 | 1986-08-22 | Epoxy resin composition and semiconductor device covered and/or sealed with epoxy composition |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61195403A JPS6351415A (en) | 1986-08-22 | 1986-08-22 | Epoxy resin composition and semiconductor device covered and/or sealed with epoxy composition |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6351415A true JPS6351415A (en) | 1988-03-04 |
Family
ID=16340536
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61195403A Pending JPS6351415A (en) | 1986-08-22 | 1986-08-22 | Epoxy resin composition and semiconductor device covered and/or sealed with epoxy composition |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6351415A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2018100411A (en) * | 2016-12-21 | 2018-06-28 | 国立大学法人九州大学 | Light emitting material, compound and organic light emitting element |
-
1986
- 1986-08-22 JP JP61195403A patent/JPS6351415A/en active Pending
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2018100411A (en) * | 2016-12-21 | 2018-06-28 | 国立大学法人九州大学 | Light emitting material, compound and organic light emitting element |
| WO2018117241A1 (en) * | 2016-12-21 | 2018-06-28 | 国立大学法人九州大学 | Luminescent material, compound, and organic luminescent element |
| CN110494531A (en) * | 2016-12-21 | 2019-11-22 | 国立大学法人九州大学 | Luminescent material, compound and organic illuminating element |
| EP3561023A4 (en) * | 2016-12-21 | 2020-10-28 | Kyushu University National University Corporation | Luminescent material, compound, and organic luminescent element |
| US11637244B2 (en) | 2016-12-21 | 2023-04-25 | Kyushu University, National University Corporation | Light-emitting material, compound, and organic light-emitting element |
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