JPH0470786B2 - - Google Patents
Info
- Publication number
- JPH0470786B2 JPH0470786B2 JP62325690A JP32569087A JPH0470786B2 JP H0470786 B2 JPH0470786 B2 JP H0470786B2 JP 62325690 A JP62325690 A JP 62325690A JP 32569087 A JP32569087 A JP 32569087A JP H0470786 B2 JPH0470786 B2 JP H0470786B2
- Authority
- JP
- Japan
- Prior art keywords
- conductive layer
- type layer
- conductive
- layer
- type
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D18/00—Thyristors
- H10D18/80—Bidirectional devices, e.g. triacs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D18/00—Thyristors
- H10D18/221—Thyristors having amplifying gate structures, e.g. cascade configurations
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/113—Isolations within a component, i.e. internal isolations
- H10D62/114—PN junction isolations
Landscapes
- Thyristors (AREA)
- Semiconductor Integrated Circuits (AREA)
Priority Applications (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62-325690A JPH01759A (ja) | 1987-03-31 | 1987-12-23 | 双方向制御整流半導体装置 |
| EP88105056A EP0287856B1 (en) | 1987-03-31 | 1988-03-29 | Gate-controlled bi-directional semiconductor switching device |
| DE88105056T DE3881264T2 (de) | 1987-03-31 | 1988-03-29 | Gate-steuerbare bilaterale Halbleiterschaltungsanordnung. |
| US07/174,982 US4994884A (en) | 1987-03-31 | 1988-03-29 | Gate-controlled bi-directional semiconductor switching device |
| KR1019880003518A KR920000639B1 (ko) | 1987-03-31 | 1988-03-30 | 쌍방향제어정류반도체장치 |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7618587 | 1987-03-31 | ||
| JP62-76185 | 1987-03-31 | ||
| JP62-325690A JPH01759A (ja) | 1987-03-31 | 1987-12-23 | 双方向制御整流半導体装置 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JPS64759A JPS64759A (en) | 1989-01-05 |
| JPH01759A JPH01759A (ja) | 1989-01-05 |
| JPH0470786B2 true JPH0470786B2 (show.php) | 1992-11-11 |
Family
ID=
Also Published As
| Publication number | Publication date |
|---|---|
| US4994884A (en) | 1991-02-19 |
| EP0287856B1 (en) | 1993-05-26 |
| DE3881264T2 (de) | 1993-11-25 |
| EP0287856A1 (en) | 1988-10-26 |
| DE3881264D1 (de) | 1993-07-01 |
| KR880011932A (ko) | 1988-10-31 |
| JPS64759A (en) | 1989-01-05 |
| KR920000639B1 (ko) | 1992-01-17 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| LAPS | Cancellation because of no payment of annual fees |