JPH0470782B2 - - Google Patents

Info

Publication number
JPH0470782B2
JPH0470782B2 JP59193893A JP19389384A JPH0470782B2 JP H0470782 B2 JPH0470782 B2 JP H0470782B2 JP 59193893 A JP59193893 A JP 59193893A JP 19389384 A JP19389384 A JP 19389384A JP H0470782 B2 JPH0470782 B2 JP H0470782B2
Authority
JP
Japan
Prior art keywords
substrate
layer
type
semiconductor layer
insulating film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP59193893A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6173365A (ja
Inventor
Yoshihiro Takemae
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP59193893A priority Critical patent/JPS6173365A/ja
Publication of JPS6173365A publication Critical patent/JPS6173365A/ja
Publication of JPH0470782B2 publication Critical patent/JPH0470782B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10BELECTRONIC MEMORY DEVICES
    • H10B12/00Dynamic random access memory [DRAM] devices
    • H10B12/30DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/37DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells the capacitor being at least partially in a trench in the substrate

Landscapes

  • Semiconductor Memories (AREA)
JP59193893A 1984-09-18 1984-09-18 半導体記憶装置 Granted JPS6173365A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59193893A JPS6173365A (ja) 1984-09-18 1984-09-18 半導体記憶装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59193893A JPS6173365A (ja) 1984-09-18 1984-09-18 半導体記憶装置

Publications (2)

Publication Number Publication Date
JPS6173365A JPS6173365A (ja) 1986-04-15
JPH0470782B2 true JPH0470782B2 (enrdf_load_stackoverflow) 1992-11-11

Family

ID=16315490

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59193893A Granted JPS6173365A (ja) 1984-09-18 1984-09-18 半導体記憶装置

Country Status (1)

Country Link
JP (1) JPS6173365A (enrdf_load_stackoverflow)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5003361A (en) * 1987-08-31 1991-03-26 At&T Bell Laboratories Active dynamic memory cell

Also Published As

Publication number Publication date
JPS6173365A (ja) 1986-04-15

Similar Documents

Publication Publication Date Title
US4646118A (en) Semiconductor memory device
EP0014388B1 (en) Semiconductor memory device
US4798794A (en) Method for manufacturing dynamic memory cell
US4855953A (en) Semiconductor memory device having stacked memory capacitors and method for manufacturing the same
JPH0744225B2 (ja) 縦型dramメモリセルアレイ
KR19980070397A (ko) 반도체장치
JPS61185965A (ja) メモリセルおよびその製法
US7894255B1 (en) Thyristor based memory cell
JPS61107762A (ja) 半導体記憶装置の製造方法
US6635551B2 (en) Deep trench isolation for reducing soft errors in integrated circuits
US7894256B1 (en) Thyristor based memory cell
JPH028464B2 (enrdf_load_stackoverflow)
JPH0642534B2 (ja) 基板に延びている壁にコンタクトを形成する方法
JPH0744226B2 (ja) 半導体装置及びその製造方法
US5329148A (en) Semiconductor device and preparing method therefor
JPS6058663A (ja) 電荷一時蓄積記憶装置
JPH0470782B2 (enrdf_load_stackoverflow)
JPS6322069B2 (enrdf_load_stackoverflow)
JPS60109265A (ja) 半導体集積回路装置
KR890004764B1 (ko) 반도체 기억장치
JPS61224350A (ja) 半導体記憶装置
JP2554332B2 (ja) 1トランジスタ型ダイナミツクメモリセル
JP2793722B2 (ja) 不揮発性半導体記憶装置およびその製造方法
JP2515033B2 (ja) 半導体スタティックメモリ装置の製造方法
JP2509177B2 (ja) メモリセル