JPS6173365A - 半導体記憶装置 - Google Patents

半導体記憶装置

Info

Publication number
JPS6173365A
JPS6173365A JP59193893A JP19389384A JPS6173365A JP S6173365 A JPS6173365 A JP S6173365A JP 59193893 A JP59193893 A JP 59193893A JP 19389384 A JP19389384 A JP 19389384A JP S6173365 A JPS6173365 A JP S6173365A
Authority
JP
Japan
Prior art keywords
layer
substrate
type
capacitor
groove
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP59193893A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0470782B2 (enrdf_load_stackoverflow
Inventor
Yoshihiro Takemae
義博 竹前
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP59193893A priority Critical patent/JPS6173365A/ja
Publication of JPS6173365A publication Critical patent/JPS6173365A/ja
Publication of JPH0470782B2 publication Critical patent/JPH0470782B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/37—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells the capacitor being at least partially in a trench in the substrate

Landscapes

  • Semiconductor Memories (AREA)
JP59193893A 1984-09-18 1984-09-18 半導体記憶装置 Granted JPS6173365A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59193893A JPS6173365A (ja) 1984-09-18 1984-09-18 半導体記憶装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59193893A JPS6173365A (ja) 1984-09-18 1984-09-18 半導体記憶装置

Publications (2)

Publication Number Publication Date
JPS6173365A true JPS6173365A (ja) 1986-04-15
JPH0470782B2 JPH0470782B2 (enrdf_load_stackoverflow) 1992-11-11

Family

ID=16315490

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59193893A Granted JPS6173365A (ja) 1984-09-18 1984-09-18 半導体記憶装置

Country Status (1)

Country Link
JP (1) JPS6173365A (enrdf_load_stackoverflow)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5003361A (en) * 1987-08-31 1991-03-26 At&T Bell Laboratories Active dynamic memory cell

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5003361A (en) * 1987-08-31 1991-03-26 At&T Bell Laboratories Active dynamic memory cell

Also Published As

Publication number Publication date
JPH0470782B2 (enrdf_load_stackoverflow) 1992-11-11

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