JPH0466101B2 - - Google Patents

Info

Publication number
JPH0466101B2
JPH0466101B2 JP60005412A JP541285A JPH0466101B2 JP H0466101 B2 JPH0466101 B2 JP H0466101B2 JP 60005412 A JP60005412 A JP 60005412A JP 541285 A JP541285 A JP 541285A JP H0466101 B2 JPH0466101 B2 JP H0466101B2
Authority
JP
Japan
Prior art keywords
electrode
emitter
collector
base
wiring layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP60005412A
Other languages
English (en)
Japanese (ja)
Other versions
JPS61164260A (ja
Inventor
Shoichi Sasaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Electric Co Ltd filed Critical Nippon Electric Co Ltd
Priority to JP541285A priority Critical patent/JPS61164260A/ja
Publication of JPS61164260A publication Critical patent/JPS61164260A/ja
Publication of JPH0466101B2 publication Critical patent/JPH0466101B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Bipolar Transistors (AREA)
JP541285A 1985-01-16 1985-01-16 バイポ―ラトランジスタ Granted JPS61164260A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP541285A JPS61164260A (ja) 1985-01-16 1985-01-16 バイポ―ラトランジスタ

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP541285A JPS61164260A (ja) 1985-01-16 1985-01-16 バイポ―ラトランジスタ

Publications (2)

Publication Number Publication Date
JPS61164260A JPS61164260A (ja) 1986-07-24
JPH0466101B2 true JPH0466101B2 (fr) 1992-10-22

Family

ID=11610429

Family Applications (1)

Application Number Title Priority Date Filing Date
JP541285A Granted JPS61164260A (ja) 1985-01-16 1985-01-16 バイポ―ラトランジスタ

Country Status (1)

Country Link
JP (1) JPS61164260A (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2352042A1 (fr) 2010-01-29 2011-08-03 Sony Corporation Élément optique et son procédé de fabrication

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56134763A (en) * 1980-03-26 1981-10-21 Chiyou Lsi Gijutsu Kenkyu Kumiai Bipolar integrated circuit
JPS5858760A (ja) * 1981-10-05 1983-04-07 Nec Corp 半導体装置
JPS5871655A (ja) * 1981-10-23 1983-04-28 Toshiba Corp 半導体装置

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56134763A (en) * 1980-03-26 1981-10-21 Chiyou Lsi Gijutsu Kenkyu Kumiai Bipolar integrated circuit
JPS5858760A (ja) * 1981-10-05 1983-04-07 Nec Corp 半導体装置
JPS5871655A (ja) * 1981-10-23 1983-04-28 Toshiba Corp 半導体装置

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2352042A1 (fr) 2010-01-29 2011-08-03 Sony Corporation Élément optique et son procédé de fabrication

Also Published As

Publication number Publication date
JPS61164260A (ja) 1986-07-24

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