JPH0464184B2 - - Google Patents
Info
- Publication number
- JPH0464184B2 JPH0464184B2 JP59084875A JP8487584A JPH0464184B2 JP H0464184 B2 JPH0464184 B2 JP H0464184B2 JP 59084875 A JP59084875 A JP 59084875A JP 8487584 A JP8487584 A JP 8487584A JP H0464184 B2 JPH0464184 B2 JP H0464184B2
- Authority
- JP
- Japan
- Prior art keywords
- region
- conductivity type
- type
- semiconductor
- base
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000004065 semiconductor Substances 0.000 claims description 18
- 239000000758 substrate Substances 0.000 claims description 11
- 238000002955 isolation Methods 0.000 claims description 7
- 230000005669 field effect Effects 0.000 claims description 5
- 238000002347 injection Methods 0.000 claims description 3
- 239000007924 injection Substances 0.000 claims description 3
- 238000009792 diffusion process Methods 0.000 description 15
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0214—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L
- H01L27/0229—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L of bipolar structures
- H01L27/0233—Integrated injection logic structures [I2L]
- H01L27/024—Integrated injection logic structures [I2L] using field effect injector structures
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Bipolar Integrated Circuits (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59084875A JPS60226164A (ja) | 1984-04-25 | 1984-04-25 | 半導体注入集積論理回路装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59084875A JPS60226164A (ja) | 1984-04-25 | 1984-04-25 | 半導体注入集積論理回路装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS60226164A JPS60226164A (ja) | 1985-11-11 |
| JPH0464184B2 true JPH0464184B2 (de) | 1992-10-14 |
Family
ID=13842961
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP59084875A Granted JPS60226164A (ja) | 1984-04-25 | 1984-04-25 | 半導体注入集積論理回路装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS60226164A (de) |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5463683A (en) * | 1977-10-31 | 1979-05-22 | Hitachi Ltd | Production of pn junction field effect transistor |
| JPS56118664A (en) * | 1980-02-22 | 1981-09-17 | Nishihara Environ Sanit Res Corp | Density measuring device |
-
1984
- 1984-04-25 JP JP59084875A patent/JPS60226164A/ja active Granted
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5463683A (en) * | 1977-10-31 | 1979-05-22 | Hitachi Ltd | Production of pn junction field effect transistor |
| JPS56118664A (en) * | 1980-02-22 | 1981-09-17 | Nishihara Environ Sanit Res Corp | Density measuring device |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS60226164A (ja) | 1985-11-11 |
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