JPH0461069B2 - - Google Patents
Info
- Publication number
- JPH0461069B2 JPH0461069B2 JP59027840A JP2784084A JPH0461069B2 JP H0461069 B2 JPH0461069 B2 JP H0461069B2 JP 59027840 A JP59027840 A JP 59027840A JP 2784084 A JP2784084 A JP 2784084A JP H0461069 B2 JPH0461069 B2 JP H0461069B2
- Authority
- JP
- Japan
- Prior art keywords
- base material
- oxide film
- aluminum base
- film
- aluminum
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000010408 film Substances 0.000 claims description 51
- 239000000463 material Substances 0.000 claims description 49
- 229910052782 aluminium Inorganic materials 0.000 claims description 43
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 43
- 239000010409 thin film Substances 0.000 claims description 28
- 238000000034 method Methods 0.000 claims description 25
- 239000007789 gas Substances 0.000 claims description 14
- 238000004140 cleaning Methods 0.000 claims description 12
- 238000010438 heat treatment Methods 0.000 claims description 12
- 238000001035 drying Methods 0.000 claims description 11
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 10
- 239000001301 oxygen Substances 0.000 claims description 10
- 229910052760 oxygen Inorganic materials 0.000 claims description 10
- 238000004381 surface treatment Methods 0.000 claims description 5
- 239000002585 base Substances 0.000 description 37
- 230000007547 defect Effects 0.000 description 12
- 238000005755 formation reaction Methods 0.000 description 9
- 230000015572 biosynthetic process Effects 0.000 description 8
- 108091008695 photoreceptors Proteins 0.000 description 7
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 6
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 6
- 239000000356 contaminant Substances 0.000 description 6
- 239000011261 inert gas Substances 0.000 description 6
- 239000002253 acid Substances 0.000 description 5
- 229910021417 amorphous silicon Inorganic materials 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 238000000465 moulding Methods 0.000 description 4
- 239000003921 oil Substances 0.000 description 4
- 238000005096 rolling process Methods 0.000 description 4
- 230000008961 swelling Effects 0.000 description 4
- 229910045601 alloy Inorganic materials 0.000 description 3
- 239000000956 alloy Substances 0.000 description 3
- 239000007864 aqueous solution Substances 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 239000000470 constituent Substances 0.000 description 3
- 238000005520 cutting process Methods 0.000 description 3
- 235000012907 honey Nutrition 0.000 description 3
- 239000007788 liquid Substances 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- 229910000838 Al alloy Inorganic materials 0.000 description 2
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- 229910001370 Se alloy Inorganic materials 0.000 description 2
- 229910018110 Se—Te Inorganic materials 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- 229910052785 arsenic Inorganic materials 0.000 description 2
- KRVSOGSZCMJSLX-UHFFFAOYSA-L chromic acid Substances O[Cr](O)(=O)=O KRVSOGSZCMJSLX-UHFFFAOYSA-L 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 229910001873 dinitrogen Inorganic materials 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000001125 extrusion Methods 0.000 description 2
- AWJWCTOOIBYHON-UHFFFAOYSA-N furo[3,4-b]pyrazine-5,7-dione Chemical compound C1=CN=C2C(=O)OC(=O)C2=N1 AWJWCTOOIBYHON-UHFFFAOYSA-N 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 235000011121 sodium hydroxide Nutrition 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- UGFAIRIUMAVXCW-UHFFFAOYSA-N Carbon monoxide Chemical compound [O+]#[C-] UGFAIRIUMAVXCW-UHFFFAOYSA-N 0.000 description 1
- 230000032683 aging Effects 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- VXAUWWUXCIMFIM-UHFFFAOYSA-M aluminum;oxygen(2-);hydroxide Chemical compound [OH-].[O-2].[Al+3] VXAUWWUXCIMFIM-UHFFFAOYSA-M 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 229910001593 boehmite Inorganic materials 0.000 description 1
- 239000001569 carbon dioxide Substances 0.000 description 1
- 229910002092 carbon dioxide Inorganic materials 0.000 description 1
- 229910002091 carbon monoxide Inorganic materials 0.000 description 1
- 238000005266 casting Methods 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000007872 degassing Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000003344 environmental pollutant Substances 0.000 description 1
- 235000012438 extruded product Nutrition 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 229930195733 hydrocarbon Natural products 0.000 description 1
- 150000002430 hydrocarbons Chemical class 0.000 description 1
- FAHBNUUHRFUEAI-UHFFFAOYSA-M hydroxidooxidoaluminium Chemical compound O[Al]=O FAHBNUUHRFUEAI-UHFFFAOYSA-M 0.000 description 1
- 230000002401 inhibitory effect Effects 0.000 description 1
- VLAPMBHFAWRUQP-UHFFFAOYSA-L molybdic acid Chemical compound O[Mo](O)(=O)=O VLAPMBHFAWRUQP-UHFFFAOYSA-L 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 231100000719 pollutant Toxicity 0.000 description 1
- 229920000137 polyphosphoric acid Polymers 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 238000010791 quenching Methods 0.000 description 1
- 230000000171 quenching effect Effects 0.000 description 1
- 239000010731 rolling oil Substances 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 229910052711 selenium Inorganic materials 0.000 description 1
- RMAQACBXLXPBSY-UHFFFAOYSA-N silicic acid Chemical compound O[Si](O)(O)O RMAQACBXLXPBSY-UHFFFAOYSA-N 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- CMPGARWFYBADJI-UHFFFAOYSA-L tungstic acid Chemical compound O[W](O)(=O)=O CMPGARWFYBADJI-UHFFFAOYSA-L 0.000 description 1
- WQEVDHBJGNOKKO-UHFFFAOYSA-K vanadic acid Chemical compound O[V](O)(O)=O WQEVDHBJGNOKKO-UHFFFAOYSA-K 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C8/00—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals
- C23C8/06—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using gases
- C23C8/08—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using gases only one element being applied
- C23C8/10—Oxidising
- C23C8/12—Oxidising using elemental oxygen or ozone
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Photoreceptors In Electrophotography (AREA)
- Physical Vapour Deposition (AREA)
- Chemical Vapour Deposition (AREA)
- ing And Chemical Polishing (AREA)
- Formation Of Insulating Films (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2784084A JPS60174864A (ja) | 1984-02-15 | 1984-02-15 | 薄膜形成用アルミニウム基材の表面処理方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2784084A JPS60174864A (ja) | 1984-02-15 | 1984-02-15 | 薄膜形成用アルミニウム基材の表面処理方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS60174864A JPS60174864A (ja) | 1985-09-09 |
| JPH0461069B2 true JPH0461069B2 (de) | 1992-09-29 |
Family
ID=12232115
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2784084A Granted JPS60174864A (ja) | 1984-02-15 | 1984-02-15 | 薄膜形成用アルミニウム基材の表面処理方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS60174864A (de) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0798994B2 (ja) * | 1986-11-25 | 1995-10-25 | 三菱マテリアル株式会社 | 表面被覆炭窒化チタン基サーメット製切削工具の製造法 |
| JPS6479755A (en) * | 1987-09-21 | 1989-03-24 | Furukawa Aluminium | Drum of photosensitive body for laser beam printer and manufacture of same |
| JP2513737B2 (ja) * | 1987-11-17 | 1996-07-03 | 三田工業株式会社 | 感光体用基板の製造法 |
| JP2513738B2 (ja) * | 1987-11-17 | 1996-07-03 | 三田工業株式会社 | 感光体用基板の製造法 |
| US5409531A (en) * | 1992-07-01 | 1995-04-25 | Hitachi Powdered Metals Co., Ltd. | Releasing agent for die casting |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS56146142A (en) * | 1980-04-16 | 1981-11-13 | Hitachi Ltd | Electrophotographic sensitive film |
| JPS57147644A (en) * | 1981-03-10 | 1982-09-11 | Ricoh Co Ltd | Photoreceptor for electrophotography |
| JPS5811944A (ja) * | 1981-07-16 | 1983-01-22 | Ricoh Co Ltd | 電子写真用感光体の製造方法 |
| JPS5814841A (ja) * | 1981-07-20 | 1983-01-27 | Ricoh Co Ltd | 電子写真用感光体の製造方法 |
| JPS5815239A (ja) * | 1981-07-21 | 1983-01-28 | Ricoh Co Ltd | 半導体素子 |
| JPS5860747A (ja) * | 1981-10-07 | 1983-04-11 | Oki Electric Ind Co Ltd | 電子写真感光体 |
| JPS58159842A (ja) * | 1982-03-17 | 1983-09-22 | Ricoh Co Ltd | 感光体の製造方法 |
-
1984
- 1984-02-15 JP JP2784084A patent/JPS60174864A/ja active Granted
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS56146142A (en) * | 1980-04-16 | 1981-11-13 | Hitachi Ltd | Electrophotographic sensitive film |
| JPS57147644A (en) * | 1981-03-10 | 1982-09-11 | Ricoh Co Ltd | Photoreceptor for electrophotography |
| JPS5811944A (ja) * | 1981-07-16 | 1983-01-22 | Ricoh Co Ltd | 電子写真用感光体の製造方法 |
| JPS5814841A (ja) * | 1981-07-20 | 1983-01-27 | Ricoh Co Ltd | 電子写真用感光体の製造方法 |
| JPS5815239A (ja) * | 1981-07-21 | 1983-01-28 | Ricoh Co Ltd | 半導体素子 |
| JPS5860747A (ja) * | 1981-10-07 | 1983-04-11 | Oki Electric Ind Co Ltd | 電子写真感光体 |
| JPS58159842A (ja) * | 1982-03-17 | 1983-09-22 | Ricoh Co Ltd | 感光体の製造方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS60174864A (ja) | 1985-09-09 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP2000133631A (ja) | 窒化ケイ素膜の選択的腐食組成物および方法 | |
| JPH0461069B2 (de) | ||
| JPH0461068B2 (de) | ||
| EP0146115B1 (de) | Verfahren zur Herstellung eines Aluminiumwerkstoffes zur Anwendung im Vakuum | |
| JPH0461070B2 (de) | ||
| KR100749145B1 (ko) | 보호막 부착 실리콘 보트 및 그 제조방법, 그를 이용하여열처리된 실리콘 웨이퍼 | |
| JPS6140748B2 (de) | ||
| JPS6140747B2 (de) | ||
| JPH07201673A (ja) | 電解コンデンサ電極用アルミニウム材料の製造方法 | |
| JPH11283924A (ja) | 半導体ウエハ製造方法 | |
| JPH04298038A (ja) | ウエハの洗浄方法 | |
| JPH06136495A (ja) | 電解コンデンサ電極用アルミニウム材料の製造方法 | |
| JP3337506B2 (ja) | 電解コンデンサ電極用アルミニウム材料の製造方法 | |
| JPH0328515B2 (de) | ||
| JP4308556B2 (ja) | 電解コンデンサ電極用アルミニウム材および電解コンデンサ電極材の製造方法並びに電解コンデンサ | |
| JPH0456309A (ja) | 電解コンデンサ用エッチング箔の製造方法 | |
| JP3320467B2 (ja) | 電解コンデンサ電極用アルミニウム材料およびその製造方法 | |
| JPH10194876A (ja) | 半導体用治具の製造方法 | |
| JPH02101157A (ja) | 真空蒸着用銅基材の製造方法 | |
| JPH02298335A (ja) | アルミニウム製真空チャンバの腐食、汚染防止方法 | |
| JPH09162146A (ja) | 半導体用治工具の清浄化方法 | |
| JPH04311550A (ja) | 電解コンデンサ電極用アルミニウム箔の製造方法 | |
| JP3531576B2 (ja) | 二酸化珪素被膜の形成方法 | |
| JPH02129364A (ja) | 真空蒸着用銅基材の製造方法 | |
| JPH04259221A (ja) | 半導体ウェーハ用洗浄液 |