JPH0459280B2 - - Google Patents

Info

Publication number
JPH0459280B2
JPH0459280B2 JP59001841A JP184184A JPH0459280B2 JP H0459280 B2 JPH0459280 B2 JP H0459280B2 JP 59001841 A JP59001841 A JP 59001841A JP 184184 A JP184184 A JP 184184A JP H0459280 B2 JPH0459280 B2 JP H0459280B2
Authority
JP
Japan
Prior art keywords
garnet
single crystal
lattice constant
solid solution
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP59001841A
Other languages
English (en)
Japanese (ja)
Other versions
JPS60145990A (ja
Inventor
Kenichi Shiraki
Taketoshi Hibya
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Electric Co Ltd filed Critical Nippon Electric Co Ltd
Priority to JP59001841A priority Critical patent/JPS60145990A/ja
Publication of JPS60145990A publication Critical patent/JPS60145990A/ja
Publication of JPH0459280B2 publication Critical patent/JPH0459280B2/ja
Granted legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B19/00Liquid-phase epitaxial-layer growth
    • C30B19/02Liquid-phase epitaxial-layer growth using molten solvents, e.g. flux
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10Inorganic compounds or compositions
    • C30B29/16Oxides
    • C30B29/22Complex oxides
    • C30B29/28Complex oxides with formula A3Me5O12 wherein A is a rare earth metal and Me is Fe, Ga, Sc, Cr, Co or Al, e.g. garnets

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Soft Magnetic Materials (AREA)
  • Thin Magnetic Films (AREA)
JP59001841A 1984-01-11 1984-01-11 液相エピタキシャル磁性ガーネット単結晶 Granted JPS60145990A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59001841A JPS60145990A (ja) 1984-01-11 1984-01-11 液相エピタキシャル磁性ガーネット単結晶

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59001841A JPS60145990A (ja) 1984-01-11 1984-01-11 液相エピタキシャル磁性ガーネット単結晶

Publications (2)

Publication Number Publication Date
JPS60145990A JPS60145990A (ja) 1985-08-01
JPH0459280B2 true JPH0459280B2 (enrdf_load_stackoverflow) 1992-09-21

Family

ID=11512772

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59001841A Granted JPS60145990A (ja) 1984-01-11 1984-01-11 液相エピタキシャル磁性ガーネット単結晶

Country Status (1)

Country Link
JP (1) JPS60145990A (enrdf_load_stackoverflow)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9771304B2 (en) 2015-06-15 2017-09-26 Skyworks Solutions, Inc. Ultra-high dielectric constant garnet

Also Published As

Publication number Publication date
JPS60145990A (ja) 1985-08-01

Similar Documents

Publication Publication Date Title
US5277845A (en) Oxide garnet single crystal
US4454206A (en) Magnetic device having a monocrystalline garnet substrate bearing a magnetic layer
US6542299B2 (en) Material for bismuth substituted garnet thick film and a manufacturing method thereof
JP3816591B2 (ja) ビスマス置換希土類鉄ガーネット単結晶膜の製造方法
JP2001044026A (ja) 磁性ガーネット単結晶およびそれを用いたファラデー回転子
US4295988A (en) Magneto-optic Bi1 Lu2 Fe5 O12 crystals
JPH0459280B2 (enrdf_load_stackoverflow)
JP2001044027A (ja) 磁性ガーネット単結晶およびそれを用いたファラデー回転子
JPH06281902A (ja) 磁気光学素子材料
JP3490143B2 (ja) 酸化物ガーネット単結晶
JP2924282B2 (ja) 磁気光学材料、その製造法およびそれを用いた光素子
JPH09202697A (ja) Bi置換型ガーネットの製造方法
JP2989654B2 (ja) ビスマス置換希土類鉄ガーネットの製造方法
JP2874319B2 (ja) 磁気光学材料、その製造法およびそれを用いた光素子
JP3649935B2 (ja) 磁性ガーネット材料およびそれを用いたファラデー回転子
JP2867736B2 (ja) 磁気光学材料、その製造法およびそれを用いた光素子
JPH11100300A (ja) ビスマス置換型ガーネット材料及びその製造方法
JP3614248B2 (ja) 磁気光学素子の基板用ガーネット結晶及びその製造法
JP3190038B2 (ja) 磁気光学結晶膜用ガーネット結晶及びその製造方法
JPS62195619A (ja) 光アイソレ−タ
JP2843433B2 (ja) Bi置換磁性ガーネット及び磁気光学素子
JP3698933B2 (ja) 磁気光学ガーネット単結晶
JPH06316497A (ja) 磁気光学ガーネット
JPH07118094A (ja) 磁性ガーネット
JP2008074703A (ja) ビスマス置換型ガーネット厚膜材料