JPH0458167B2 - - Google Patents
Info
- Publication number
- JPH0458167B2 JPH0458167B2 JP58151947A JP15194783A JPH0458167B2 JP H0458167 B2 JPH0458167 B2 JP H0458167B2 JP 58151947 A JP58151947 A JP 58151947A JP 15194783 A JP15194783 A JP 15194783A JP H0458167 B2 JPH0458167 B2 JP H0458167B2
- Authority
- JP
- Japan
- Prior art keywords
- film
- etched
- etching
- mask
- organic
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000005530 etching Methods 0.000 claims description 50
- 238000000034 method Methods 0.000 claims description 28
- 239000004065 semiconductor Substances 0.000 claims description 19
- 239000000758 substrate Substances 0.000 claims description 18
- 238000010894 electron beam technology Methods 0.000 claims description 12
- 238000010884 ion-beam technique Methods 0.000 claims description 11
- 239000000654 additive Substances 0.000 claims description 4
- 239000000463 material Substances 0.000 claims description 4
- 230000000996 additive effect Effects 0.000 claims 3
- 230000001235 sensitizing effect Effects 0.000 claims 1
- 239000010410 layer Substances 0.000 description 11
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 8
- 229920005591 polysilicon Polymers 0.000 description 8
- 230000000873 masking effect Effects 0.000 description 4
- 229910021417 amorphous silicon Inorganic materials 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- RFCAUADVODFSLZ-UHFFFAOYSA-N 1-Chloro-1,1,2,2,2-pentafluoroethane Chemical compound FC(F)(F)C(F)(F)Cl RFCAUADVODFSLZ-UHFFFAOYSA-N 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 235000019406 chloropentafluoroethane Nutrition 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000011229 interlayer Substances 0.000 description 2
- 239000011368 organic material Substances 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- -1 CF 4 or CCl 4 Chemical class 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 239000000975 dye Substances 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 150000002366 halogen compounds Chemical class 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 239000009719 polyimide resin Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
- G03F7/094—Multilayer resist systems, e.g. planarising layers
Landscapes
- Engineering & Computer Science (AREA)
- Architecture (AREA)
- Structural Engineering (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Drying Of Semiconductors (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58151947A JPS6043827A (ja) | 1983-08-20 | 1983-08-20 | 微細パタ−ンの形成方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58151947A JPS6043827A (ja) | 1983-08-20 | 1983-08-20 | 微細パタ−ンの形成方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6043827A JPS6043827A (ja) | 1985-03-08 |
| JPH0458167B2 true JPH0458167B2 (ko) | 1992-09-16 |
Family
ID=15529679
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58151947A Granted JPS6043827A (ja) | 1983-08-20 | 1983-08-20 | 微細パタ−ンの形成方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6043827A (ko) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61248039A (ja) * | 1985-04-26 | 1986-11-05 | Hitachi Ltd | パタ−ンの形成方法 |
| JPS6316623A (ja) * | 1986-07-08 | 1988-01-23 | Fujitsu Ltd | 半導体装置の製造方法 |
| JPH0754210B2 (ja) * | 1987-05-06 | 1995-06-07 | 三洋電機株式会社 | 吸収式冷温水機のプレ−ト式熱交換器 |
| JP2691175B2 (ja) * | 1989-09-08 | 1997-12-17 | 日本電信電話株式会社 | パターン化酸化物超伝導膜形成法 |
| JPH03235380A (ja) * | 1990-02-13 | 1991-10-21 | Sumitomo Cement Co Ltd | 超伝導薄膜パターンの製造方法 |
| US5126231A (en) * | 1990-02-26 | 1992-06-30 | Applied Materials, Inc. | Process for multi-layer photoresist etching with minimal feature undercut and unchanging photoresist load during etch |
| JP4496631B2 (ja) * | 2000-09-27 | 2010-07-07 | 富士通株式会社 | 電子デバイスの製造方法 |
-
1983
- 1983-08-20 JP JP58151947A patent/JPS6043827A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6043827A (ja) | 1985-03-08 |
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