JPH0451066B2 - - Google Patents

Info

Publication number
JPH0451066B2
JPH0451066B2 JP58039934A JP3993483A JPH0451066B2 JP H0451066 B2 JPH0451066 B2 JP H0451066B2 JP 58039934 A JP58039934 A JP 58039934A JP 3993483 A JP3993483 A JP 3993483A JP H0451066 B2 JPH0451066 B2 JP H0451066B2
Authority
JP
Japan
Prior art keywords
region
conductivity type
semiconductor layer
impurity density
high impurity
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP58039934A
Other languages
English (en)
Japanese (ja)
Other versions
JPS58169954A (ja
Inventor
Junichi Nishizawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Individual
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Priority to JP58039934A priority Critical patent/JPS58169954A/ja
Publication of JPS58169954A publication Critical patent/JPS58169954A/ja
Publication of JPH0451066B2 publication Critical patent/JPH0451066B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/87—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of PN-junction gate FETs

Landscapes

  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Junction Field-Effect Transistors (AREA)
JP58039934A 1983-03-10 1983-03-10 半導体集積回路 Granted JPS58169954A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58039934A JPS58169954A (ja) 1983-03-10 1983-03-10 半導体集積回路

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58039934A JPS58169954A (ja) 1983-03-10 1983-03-10 半導体集積回路

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP9085577A Division JPS5918871B2 (ja) 1977-07-28 1977-07-28 半導体集積回路

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP4020792A Division JPH0618254B2 (ja) 1992-01-06 1992-01-10 半導体集積回路

Publications (2)

Publication Number Publication Date
JPS58169954A JPS58169954A (ja) 1983-10-06
JPH0451066B2 true JPH0451066B2 (enrdf_load_stackoverflow) 1992-08-18

Family

ID=12566768

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58039934A Granted JPS58169954A (ja) 1983-03-10 1983-03-10 半導体集積回路

Country Status (1)

Country Link
JP (1) JPS58169954A (enrdf_load_stackoverflow)

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5918871B2 (ja) * 1977-07-28 1984-05-01 財団法人半導体研究振興会 半導体集積回路

Also Published As

Publication number Publication date
JPS58169954A (ja) 1983-10-06

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