JPS6148267B2 - - Google Patents
Info
- Publication number
- JPS6148267B2 JPS6148267B2 JP52065042A JP6504277A JPS6148267B2 JP S6148267 B2 JPS6148267 B2 JP S6148267B2 JP 52065042 A JP52065042 A JP 52065042A JP 6504277 A JP6504277 A JP 6504277A JP S6148267 B2 JPS6148267 B2 JP S6148267B2
- Authority
- JP
- Japan
- Prior art keywords
- circuit
- static induction
- channel
- induction transistor
- semiconductor integrated
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 230000006698 induction Effects 0.000 claims description 19
- 230000003068 static effect Effects 0.000 claims description 19
- 239000004065 semiconductor Substances 0.000 claims description 8
- 230000005669 field effect Effects 0.000 claims 2
- 239000012212 insulator Substances 0.000 claims 1
- 239000000758 substrate Substances 0.000 description 9
- 238000000034 method Methods 0.000 description 8
- 238000009792 diffusion process Methods 0.000 description 4
- 238000002347 injection Methods 0.000 description 4
- 239000007924 injection Substances 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- -1 Si 3 N 4 Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
Landscapes
- Semiconductor Integrated Circuits (AREA)
- Junction Field-Effect Transistors (AREA)
- Logic Circuits (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6504277A JPS5412277A (en) | 1977-06-01 | 1977-06-01 | Semiconductor ic |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6504277A JPS5412277A (en) | 1977-06-01 | 1977-06-01 | Semiconductor ic |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5412277A JPS5412277A (en) | 1979-01-29 |
| JPS6148267B2 true JPS6148267B2 (enrdf_load_stackoverflow) | 1986-10-23 |
Family
ID=13275498
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP6504277A Granted JPS5412277A (en) | 1977-06-01 | 1977-06-01 | Semiconductor ic |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5412277A (enrdf_load_stackoverflow) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS595126Y2 (ja) * | 1979-02-02 | 1984-02-16 | 富士重工業株式会社 | 内燃機関のバルブロッカカバ−装置 |
| JPS63100819A (ja) * | 1986-10-16 | 1988-05-02 | Fuji Electric Co Ltd | 論理回路 |
-
1977
- 1977-06-01 JP JP6504277A patent/JPS5412277A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5412277A (en) | 1979-01-29 |
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