JPH0450748B2 - - Google Patents

Info

Publication number
JPH0450748B2
JPH0450748B2 JP58020032A JP2003283A JPH0450748B2 JP H0450748 B2 JPH0450748 B2 JP H0450748B2 JP 58020032 A JP58020032 A JP 58020032A JP 2003283 A JP2003283 A JP 2003283A JP H0450748 B2 JPH0450748 B2 JP H0450748B2
Authority
JP
Japan
Prior art keywords
film
region
sio
active region
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP58020032A
Other languages
English (en)
Japanese (ja)
Other versions
JPS59145539A (ja
Inventor
Kunihiko Asahi
Shuichi Mayumi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electronics Corp filed Critical Matsushita Electronics Corp
Priority to JP58020032A priority Critical patent/JPS59145539A/ja
Publication of JPS59145539A publication Critical patent/JPS59145539A/ja
Publication of JPH0450748B2 publication Critical patent/JPH0450748B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/01—Manufacture or treatment
    • H10W10/011—Manufacture or treatment of isolation regions comprising dielectric materials
    • H10W10/012—Manufacture or treatment of isolation regions comprising dielectric materials using local oxidation of silicon [LOCOS]
    • H10W10/0125—Manufacture or treatment of isolation regions comprising dielectric materials using local oxidation of silicon [LOCOS] comprising introducing electrical impurities in local oxidation regions, e.g. to alter LOCOS oxide growth characteristics
    • H10W10/0126—Manufacture or treatment of isolation regions comprising dielectric materials using local oxidation of silicon [LOCOS] comprising introducing electrical impurities in local oxidation regions, e.g. to alter LOCOS oxide growth characteristics introducing electrical active impurities in local oxidation regions to create channel stoppers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/10—Isolation regions comprising dielectric materials
    • H10W10/13—Isolation regions comprising dielectric materials formed using local oxidation of silicon [LOCOS], e.g. sealed interface localised oxidation [SILO] or side-wall mask isolation [SWAMI]

Landscapes

  • Element Separation (AREA)
  • Local Oxidation Of Silicon (AREA)
JP58020032A 1983-02-09 1983-02-09 半導体装置の製造方法 Granted JPS59145539A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58020032A JPS59145539A (ja) 1983-02-09 1983-02-09 半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58020032A JPS59145539A (ja) 1983-02-09 1983-02-09 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS59145539A JPS59145539A (ja) 1984-08-21
JPH0450748B2 true JPH0450748B2 (enExample) 1992-08-17

Family

ID=12015722

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58020032A Granted JPS59145539A (ja) 1983-02-09 1983-02-09 半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JPS59145539A (enExample)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01283854A (ja) * 1988-05-10 1989-11-15 Nec Corp 半導体装置の製造方法

Also Published As

Publication number Publication date
JPS59145539A (ja) 1984-08-21

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