JPH0449185Y2 - - Google Patents
Info
- Publication number
- JPH0449185Y2 JPH0449185Y2 JP19111887U JP19111887U JPH0449185Y2 JP H0449185 Y2 JPH0449185 Y2 JP H0449185Y2 JP 19111887 U JP19111887 U JP 19111887U JP 19111887 U JP19111887 U JP 19111887U JP H0449185 Y2 JPH0449185 Y2 JP H0449185Y2
- Authority
- JP
- Japan
- Prior art keywords
- crystal
- heating means
- solid
- single crystal
- heating
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000013078 crystal Substances 0.000 claims description 56
- 238000010438 heat treatment Methods 0.000 claims description 33
- 239000007788 liquid Substances 0.000 claims description 26
- 239000010453 quartz Substances 0.000 claims description 25
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 25
- 238000004519 manufacturing process Methods 0.000 claims description 15
- 230000005855 radiation Effects 0.000 claims description 8
- 238000001816 cooling Methods 0.000 claims description 4
- 239000002994 raw material Substances 0.000 claims description 4
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 14
- 238000000034 method Methods 0.000 description 11
- 239000003708 ampul Substances 0.000 description 7
- 230000017525 heat dissipation Effects 0.000 description 5
- 238000010586 diagram Methods 0.000 description 3
- 238000002791 soaking Methods 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 229910000953 kanthal Inorganic materials 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 230000008021 deposition Effects 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 239000012774 insulation material Substances 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 238000007711 solidification Methods 0.000 description 1
- 230000008023 solidification Effects 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19111887U JPH0449185Y2 (fr) | 1987-12-16 | 1987-12-16 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19111887U JPH0449185Y2 (fr) | 1987-12-16 | 1987-12-16 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0194467U JPH0194467U (fr) | 1989-06-21 |
| JPH0449185Y2 true JPH0449185Y2 (fr) | 1992-11-19 |
Family
ID=31482044
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP19111887U Expired JPH0449185Y2 (fr) | 1987-12-16 | 1987-12-16 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0449185Y2 (fr) |
-
1987
- 1987-12-16 JP JP19111887U patent/JPH0449185Y2/ja not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0194467U (fr) | 1989-06-21 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPH0449185Y2 (fr) | ||
| JP4144349B2 (ja) | 化合物半導体製造装置 | |
| JPH1129398A (ja) | 化合物半導体単結晶の製造装置 | |
| JP2733898B2 (ja) | 化合物半導体単結晶の製造方法 | |
| JPH0316988A (ja) | 化合物半導体単結晶製造装置 | |
| JP2001080987A (ja) | 化合物半導体結晶の製造装置及びそれを用いた製造方法 | |
| JPS60180989A (ja) | 化合物単結晶の製造方法 | |
| JP3788077B2 (ja) | 半導体結晶の製造方法および製造装置 | |
| JP3700397B2 (ja) | 化合物半導体結晶の製造方法 | |
| JPS63185885A (ja) | 横型結晶成長装置 | |
| JP2686662B2 (ja) | 酸化物単結晶の製造装置 | |
| JPH05238870A (ja) | 化合物半導体単結晶の製造方法およびその製造装置 | |
| JP2773441B2 (ja) | ＧａＡｓ単結晶の製造方法 | |
| JPH069025Y2 (ja) | 化合物半導体単結晶製造装置 | |
| JPH0475880B2 (fr) | ||
| JPH0733303B2 (ja) | 結晶成長装置 | |
| JPH05319973A (ja) | 単結晶製造装置 | |
| JPS5997591A (ja) | 単結晶育成法および装置 | |
| JPH0234592A (ja) | 化合物半導体単結晶の成長方法 | |
| JP2004026577A (ja) | 化合物半導体単結晶成長装置及び化合物半導体単結晶成長方法 | |
| JPH05262596A (ja) | 四ホウ酸リチウム単結晶の製造方法 | |
| JPS63103895A (ja) | ＣｄＴｅの結晶成長装置 | |
| JPH0725533B2 (ja) | シリコン多結晶インゴツトの製造方法 | |
| JPS63233091A (ja) | 化合物半導体の単結晶製造方法及びその装置 | |
| JP2004018319A (ja) | 化合物半導体結晶成長装置 |