JPH0442911Y2 - - Google Patents

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Publication number
JPH0442911Y2
JPH0442911Y2 JP1984022015U JP2201584U JPH0442911Y2 JP H0442911 Y2 JPH0442911 Y2 JP H0442911Y2 JP 1984022015 U JP1984022015 U JP 1984022015U JP 2201584 U JP2201584 U JP 2201584U JP H0442911 Y2 JPH0442911 Y2 JP H0442911Y2
Authority
JP
Japan
Prior art keywords
seed crystal
crystal
holding
crucible
holding surface
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP1984022015U
Other languages
English (en)
Japanese (ja)
Other versions
JPS60136134U (ja
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP1984022015U priority Critical patent/JPS60136134U/ja
Publication of JPS60136134U publication Critical patent/JPS60136134U/ja
Application granted granted Critical
Publication of JPH0442911Y2 publication Critical patent/JPH0442911Y2/ja
Granted legal-status Critical Current

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  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
JP1984022015U 1984-02-17 1984-02-17 単結晶成長装置 Granted JPS60136134U (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1984022015U JPS60136134U (ja) 1984-02-17 1984-02-17 単結晶成長装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1984022015U JPS60136134U (ja) 1984-02-17 1984-02-17 単結晶成長装置

Publications (2)

Publication Number Publication Date
JPS60136134U JPS60136134U (ja) 1985-09-10
JPH0442911Y2 true JPH0442911Y2 (cs) 1992-10-12

Family

ID=30513928

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1984022015U Granted JPS60136134U (ja) 1984-02-17 1984-02-17 単結晶成長装置

Country Status (1)

Country Link
JP (1) JPS60136134U (cs)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4691292B2 (ja) * 1999-07-07 2011-06-01 エスアイクリスタル アクチエンゲゼルシャフト ＳｉＣ種結晶の外周壁を有する種結晶ホルダ
JP4523733B2 (ja) * 2001-04-05 2010-08-11 新日本製鐵株式会社 炭化珪素単結晶インゴットの製造方法並びに炭化珪素単結晶育成用種結晶の装着方法
JP2011219337A (ja) * 2010-04-14 2011-11-04 Sumitomo Electric Ind Ltd 結晶の製造方法、結晶および半導体装置

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5138284A (en) * 1974-09-30 1976-03-30 Tokyo Shibaura Electric Co Itajotanketsushono seizohoho
JPS53147700A (en) * 1977-05-30 1978-12-22 Sharp Corp Method of producing silicon carbide substrate
JPS55100299A (en) * 1979-01-25 1980-07-31 Sharp Corp Production of silicon carbide crystal layer

Also Published As

Publication number Publication date
JPS60136134U (ja) 1985-09-10

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